Single Bipolar Transistors
General Purpose NPN Transistor JSMSEMI S9018 Featuring 200mW Power Dissipation and Amplification
Product OverviewThe S9018 is an NPN epitaxial silicon transistor designed for general-purpose applications. It features a high current gain bandwidth product and a power dissipation of 200mW. This transistor is suitable for various electronic circuits requiring amplification and switching capabilities.Product AttributesBrand: JSMICRO SemiconductorMaterial: Silicon Epitaxial PlanarPackage Type: SOT-23Technical SpecificationsSymbolParameterTest ConditionsMinTypMaxUnitsVCBOColle
General Purpose Amplification Transistor JSMSEMI 2SC1623 Silicon Epitaxial Planar NPN Type for Audio
Product OverviewThe 2SC1623 is an NPN Silicon Epitaxial Planar Transistor designed for audio frequency general-purpose amplification. It features high DC current gain (hFE=200 TYP) and a high voltage rating of VCEO=50V, making it suitable for various amplifier applications.Product AttributesBrand: JSMICRO SemiconductorMaterial: Silicon Epitaxial PlanarPackage Type: SOT-23Moisture Sensitivity Level (MSL): 1Technical SpecificationsParameterSymbolTest ConditionsMINTYPMAXUnitsCol
Medium Power PNP Transistor JSMSEMI TIP32C TO220 Package Ideal for Linear and Switching Circuits
Product OverviewThe JSMICRO Semiconductor TIP32/32A/32B/32C are PNP Power Transistors designed for medium power linear and switching applications. They are complementary to the TIP31/31A/31B/31C series and come in a TO-220 package.Product AttributesBrand: JSMICRO SemiconductorPackage: TO-220Technical SpecificationsModelVCEO(SUS) (V)VCEsat (V)VBE (V)ICES (mA)ICEO (mA)IEBO (mA)hFE-1hFE-2fT (MHz)TIP32-40-1.2-1.8-0.2-0.3-1.025103TIP32A-60TIP32B-80-0.3TIP32C-100SymbolParameterCond
Medium power PNP transistor JSMSEMI MMBT4403 silicon epitaxial planar type for general electronic
MMBT4403 PNP Silicon Epitaxial Planar TransistorThe MMBT4403 is a PNP Silicon Epitaxial Planar Transistor designed for general-purpose applications in desktop and handheld systems. It is ideal for medium-power signal amplification and switching. The device features epitaxial planar die construction and has a complementary NPN product available (MMBT4401). It is MSL Class 1 compatible.Product AttributesBrand: JSMICRO SemiconductorMaterial: SiliconPackage: SOT-23Complementary
High Temperature Operating NPN Transistor JSMSEMI S9013 with 150 Celsius Maximum Ambient Temperature
Product OverviewThe JSMICRO S9013 is an NPN Epitaxial Silicon Transistor designed for general-purpose applications. It offers a power dissipation of 0.625 W at 25C ambient temperature and can operate up to 150C. Key features include a collector current of 0.5 A and a collector-base voltage of 40 V.Product AttributesBrand: JSMICROProduct Name: S9013Type: NPN Epitaxial Silicon TransistorOrigin: SemiconductorTechnical SpecificationsParameterSymbolTest conditionsMINTYPMAXUNITColl
NPN Silicon Transistor in SOT23 Package JSMSEMI MMBTA44 with High Voltage and Low Saturation Voltage
Product Overview SOT-23 Plastic Package NPN Silicon Transistor. Features high voltage and low saturation voltage, making it suitable for high voltage control circuits. Available in hFE classifications ranging from 50 to 200. Product Attributes Brand: JSMICR0 Semiconductor Model: MMBTA44 Package: SOT-23 Plastic Package Origin: Semiconductor (implied by brand) Technical Specifications Parameter Symbol Rating Unit Test Conditions Min Typ Max Unit Absolute Maximum Ratings (Ta=25)
Low noise silicon epitaxial planar transistor JSMSEMI S9014 suitable for pre amplifier applications
Product OverviewThe S9014 is a Silicon Epitaxial Planar Transistor designed for per-amplifier low level and low noise applications. It offers excellent hFE linearity and a power dissipation of 0.2W. This transistor is complementary to the S9015.Product AttributesBrand: JSMICRO SemiconductorMaterial: Silicon Epitaxial PlanarPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsCollector-Base VoltageVCBO50VCollector-Emitter VoltageVCEO45VEmitter
Medium power switching transistor JSMSEMI MMBT4401 NPN silicon epitaxial planar for general purpose
MMBT4401 NPN Silicon Epitaxial Planar TransistorThe MMBT4401 is an NPN Silicon Epitaxial Planar Transistor designed for medium power amplification and switching applications. It features epitaxial planar die construction and is ideal for general-purpose and switching applications. A complementary PNP type, MMBT4403, is also available.Product AttributesBrand: JSMICRO SemiconductorMaterial: SiliconPackage Type: SOT-23Complementary PNP Type: MMBT4403Technical SpecificationsParam
PNP transistor JSMSEMI 2N5401 for switching and amplification in high voltage telephony applications
Product OverviewThe 2N5401 is a PNP transistor designed for switching and amplification in high-voltage applications, particularly in telephony. It offers low current (Max. 600mA) and high voltage (Max. 160V) capabilities.Product AttributesBrand: JSMICRO SemiconductorModel: 2N5401Technical SpecificationsSymbolParameterValueUnitTest ConditionsMAXIMUM RATINGSVCBOCollector-Base Voltage-160V(Ta=25 unless otherwise noted)VCEOCollector-Emitter Voltage-150V(Ta=25 unless otherwise
JSMSEMI MJ15023G JSM Power Transistor TO3 Package Ideal for High Current Gain and Audio Applications
Product OverviewThe MJ15023G to MJ15025G series are PNP power transistors housed in a TO-3 package. They are complements to the MJ15022G, MJ15024G types and offer an excellent safe operating area and high DC current gain. These transistors are designed for high power audio, disk head positioners, and other linear applications.Product AttributesBrand: JSMICRO SemiconductorPackage Type: TO-3Technical SpecificationsParameterConditionsMJ15023GMJ15025GUnitMinTyp.MaxVCBO Collector
TO92 plastic package NPN transistor JSMSEMI 2N3904 ideal for general purpose low current low voltage
Product OverviewLow current, low voltage general purpose amplifier. This is a Silicon NPN transistor in a TO-92 Plastic Package.Product AttributesBrand: JSMICRO SemiconductorModel: 2N3904Type: NPN Semiconductor TriodePackage: TO-92 Plastic PackageTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector to Base Voltage (Breakdown)VCBOIC=10A, IE=060VCollector to Emitter Voltage (Breakdown)VCEOIC=1.0mA, IB=040VEmitter to Base Voltage (Breakdown)VEBOIE=10A, IC
Power Transistor JSMSEMI MJ15025G-JSM PNP Type Featuring High DC Current Gain and Safe Operating Area
Product OverviewThe MJ15023-MJ15025 series are PNP power transistors featuring high DC current gain (hFE = 15 Min @ IC = 8A) and an excellent safe operating area. Designed for high power audio, disk head positioners, and other linear applications, these transistors come in a TO-3 package and are complements to the MJ15022 and MJ15024 types.Product AttributesBrand: JSMICRO SemiconductorPackage Type: TO-3Complementary to: MJ15022, MJ15024Technical SpecificationsSymbolParameterC
Plastic Encapsulated PNP Transistor Model JSMSEMI 2SB647A for Electronic Circuit Power Amplification
Product OverviewThe 2SB647A is a plastic-encapsulated PNP transistor designed for low-frequency power amplifier applications. It is a complementary pair with the 2SD667, offering reliable performance for various electronic circuits.Product AttributesBrand: JSMICRO SemiconductorMaterial: Plastic-Encapsulated TransistorsColor: Solid dot = Green molding compound device, if none, the normal deviceTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-base
NPN Silicon Transistor JSMSEMI S8050 Featuring 25 Volt Collector Emitter Voltage and 0.5 Amp Current
Product OverviewThe S8050 is an NPN Silicon General Purpose Transistor, complementary to the S8550. It is designed for general-purpose applications with a collector current rating of IC = 0.5 A.Product AttributesBrand: JSMICRO SemiconductorModel: S8050Type: NPN Silicon General Purpose TransistorComplementary to: S8550Technical SpecificationsParameterSymbolRatingsUnitTest ConditionsCollector to Base VoltageVCBO40VCollector to Emitter VoltageVCEO25VEmitter to Base VoltageVEBO5V
PNP Darlington Power Transistor JSMSEMI TIP126-JSM Silicon Type with High DC Current Gain and TO220C
Product OverviewThe TIP125/126/127 are Silicon PNP Darlington Power Transistors designed for general-purpose amplifier and low-speed switching applications. They feature a TO-220C package, high DC current gain, and low collector saturation voltage. These transistors are complementary to the TIP120/121/122 series.Product AttributesBrand: JSMICRO SemiconductorMaterial: SiliconPackage: TO-220CTechnical SpecificationsModelParameterConditionsValueUnitTIP125VCBO Collector-base
High current capability PNP transistor JSMSEMI SS8550 suitable for power amplification and complementary SS8050
Product OverviewThe SS8550 is a PNP transistor designed for power amplification circuits. It offers high current capability and is complementary to the SS8050 transistor, making it suitable for various power amplification applications.Product AttributesBrand: JSMICRO SemiconductorModel: SS8550Type: PNPTechnical SpecificationsParameterSymbolValueUnitTest ConditionsAbsolute Maximum Ratings (Ta=25)VCBO-40VVCEO-25VVEBO-5VIC (Continuous)-1.25-1.5*ANote: At Ib=100mA, IC can operate
Power Amplification and Motor Driver Electronic Component JSMSEMI S8550 PNP Semiconductor Transistor
Product OverviewThe S8550 is a PNP semiconductor transistor designed for low-frequency power amplification and as a driver for small motors. It is complementary to the S8050, offering a versatile solution for various electronic applications.Product AttributesBrand: JSMICRO SemiconductorProduct Type: PNP Semiconductor TransistorComplementary to: S8050Marking: S8550:2TYTechnical SpecificationsCharacteristicSymbolRatingUnitTest ConditionMin.Typ.Max.Collector-Base VoltageVCBO
TO220 Package Medium Power NPN Silicon Transistor JSMSEMI TIP41C for Linear Switching Applications
TIP41 Series NPN Power TransistorThe TIP41 series are NPN silicon power transistors in a TO-220 plastic package. They are complementary to the TIP42 series and are designed for medium power linear switching applications.Product AttributesBrand: JSMICRO SemiconductorComplementary to: TIP42Technical SpecificationsParameterSymbolTIP41TIP41ATIP41BTIP41CUnitTest ConditionsMinTypMaxAbsolute Maximum Ratings (Ta=25)Collector to Base VoltageVCBO406080100VCollector to Emitter
NPN transistor JSMSEMI MPS2222A suitable for switching amplification and general electronic circuits
Product OverviewThe MPS2222A is a general-purpose NPN silicon transistor designed for various electronic applications. It offers complementary PNP type availability with the MPS2907A. This transistor is suitable for switching and amplification circuits.Product AttributesBrand: JSMICRO SemiconductorModel: MPS2222AComplementary Type: MPS2907AMaterial: SiliconPackage: TO-92Technical SpecificationsParameterSymbolTest ConditionsMINMAXUnitsCollector-Base VoltageVCBO75VCollector
Power Dissipation 0625 Watt PNP Epitaxial Silicon Transistor JSMSEMI S9012 with 05 Amp Collector Current
Product OverviewThe JSMICRO Semiconductor S9012 is a PNP Epitaxial Silicon Transistor designed for general-purpose applications. It offers features such as a power dissipation of 0.625 W and a collector current of -0.5 A, making it suitable for various electronic circuits.Product AttributesBrand: JSMICRO SemiconductorModel: S9012Type: PNP Epitaxial Silicon TransistorOrigin: Not specifiedMaterial: SiliconColor: Not specifiedCertifications: Not specifiedTechnical Specifications
