Single Bipolar Transistors
High reliability transistor JSMSEMI NJW0281G-JSM with 150 degree Celsius maximum junction temperature
Product OverviewThe NJW0281G/NJW0302G are semiconductor discrete devices from JSMICRO Semiconductor, designed for general-purpose amplification, audio power amplification, power supply regulation, and other electronic circuits. These transistors feature high breakdown voltage, low leakage current, and superior frequency characteristics, making them suitable for demanding applications.Product AttributesBrand: JSMICRO SemiconductorModel Numbers: NJW0281G, NJW0302GType:
Low noise NPN silicon epitaxial transistor JSMSEMI PBR951 ideal for demanding RF and CATV applications
Product OverviewThe PBR951 is an NPN silicon epitaxial transistor engineered for low-noise amplification across VHF, UHF, and CATV bands. It offers excellent dynamic range and favorable current characteristics, making it suitable for demanding RF applications.Product AttributesBrand: JSMICRO SemiconductorModel: PBR951Type: NPN silicon epitaxial transistorMarking: W2WOrigin: China (implied by website and page numbering)Technical SpecificationsCharacteristicSymbolMin.Typ.Max
High Current Gain NPN Transistor JSMSEMI BC817 Suitable for AF Applications and Medium Power Circuits
Product OverviewThe BC817-16/-25/-40 is an NPN general-purpose amplifier designed for AF applications. It offers complementary PNP type BC807, high collector current, high current gain, and low collector-emitter saturation voltage. This device is suitable for general-purpose medium power amplification and switching applications requiring collector currents up to 1.2mA.Product AttributesBrand: JSMICRO SemiconductorComplementary PNP Type: BC807Package Type: SOT-23Technical
PNP General Purpose Transistor JSMSEMI BC857-JSM Suitable for Switching Amplification Applications
Product OverviewThe PNP general-purpose transistor series BC856/857/858 offers low current (max. 100mA) and low voltage capabilities, making them suitable for general-purpose switching and amplification applications.Product AttributesBrand: JSMICRO SemiconductorTechnical SpecificationsType No.MarkingPackage CodeVCBO (V)VCEO (V)VEBO (V)IC (A)PC (mW)Tj,Tstg ()V(BR)CBO (V)V(BR)CEO (V)V(BR)EBO (V)ICBO (nA)IEBO (A)hFE (VCE=-5V,IC=-2mA)VCE(sat) (V)VBE(sat) (V)VBE(on) (V)Cc (pF)fT
Silicon NPN Power Transistor JSMSEMI 2SC2073 TO220 Package Suitable for Power Amplifier Applications
Product OverviewThe 2SC2073 is a Silicon NPN transistor in a TO-220 Plastic Package. It features a wide Safe Operating Area and is complementary to the 2SA940. This transistor is designed for power amplifier and vertical output applications.Product AttributesType: NPN Silicon Power TransistorPackage: TO-220 Plastic PackageComplementary to: 2SA940Technical SpecificationsParameterSymbolRatingUnitTest ConditionsMinTypMaxCollector to Base VoltageVCBO150VCollector to Emitter
fast switching NPN transistor JSMSEMI BU406 JSM ideal for various electronic circuit power management
Product OverviewThe BU406 is a high voltage, fast-switching NPN power transistor designed for general-purpose applications. It features low saturation voltage and Pb-free packaging options, making it suitable for various electronic circuits requiring efficient power handling and rapid switching capabilities.Product AttributesBrand: JSMICRO SemiconductorModel: BU406Package Type: TO-220-3LCertifications: PbFree Packages AvailableTechnical SpecificationsParameterSymbolTest
Silicon Transistor JSMSEMI C945 Featuring Low Noise and High Voltage Operation for Amplifier Circuits
Product OverviewThe C945 is a Silicon Epitaxial Planar Transistor designed for high voltage and high current applications. It features excellent hFE linearity and low noise, making it suitable for audio frequency amplifier circuits. Available in a SOT-23 package.Product AttributesBrand: JSMICRO SemiconductorMaterial: Silicon Epitaxial Planar TransistorPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsCollector-Base VoltageVCBO@ Ta=2560VCollect
Low frequency power amplifier transistor JSMSEMI 2SD667A featuring DC current gain and voltage specs
Product OverviewThe 2SD667/A is a low frequency power amplifier designed as a complementary pair with the 2SB647/A. It offers robust performance with high breakdown voltages and reliable DC current gain characteristics.Product AttributesBrand: JSMICRO SemiconductorProduct Type: Transistor (NPN)Package: TO-92Technical SpecificationsModelParameterSymbolTest ConditionsMinTypMaxUnit2SD667/ACollector-base breakdown voltageV(BR)CBOIC=10A,IE=0120VCollector-emitter breakdown voltageV
General Purpose PNP Transistor JSMSEMI MMBT3906 Medium Power Amplification and Switching Applications
Product OverviewThe MMBT3906 NP is a general-purpose PNP transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications. A complementary NPN type, the MMBT3904, is also available. This transistor offers a collector current capability of -200mA and a low maximum voltage rating of -40V.Product AttributesBrand: JSMICRO SemiconductorModel: MMBT3906 NPPackage Type: SOT-23Technical SpecificationsSymbolParameterCondition
High Gain PNP Silicon Transistor JSMSEMI BC807 with Low Collector Emitter Saturation Voltage in SOT23
Product OverviewThe BC807-16/-25/-40 is a PNP Silicon Epitaxial Planar Transistor designed for general-purpose applications. It features epitaxial planar die construction, a complementary counterpart to the BC817, high collector current capability, high current gain, and a low collector-emitter saturation voltage. This transistor is housed in a SOT-23 package.Product AttributesBrand: JSMICRO SemiconductorMaterial: SiliconCertifications: UL flammability classification rating
High Voltage NPN Transistor JSMSEMI MMBTA42 Featuring SOT23 Package and Complementary MMBTA92
Product OverviewThe MMBTA42 is an NPN Silicon High Voltage Transistor designed for high voltage switching and amplifier applications. It offers complementary PNP types with the MMBTA92.Product AttributesBrand: JSMICRO SemiconductorPackage: SOT-23 Plastic PackageComplementary Type: MMBTA92 (PNP)Technical SpecificationsParameterSymbolValueUnitConditionsCollector Base VoltageVCBO200VCollector Emitter VoltageVCEO200VEmitter Base VoltageVEBO6VCollector CurrentIC500mAPower
TO92 Package Silicon PNP Transistor JSMSEMI 2N3906 for General Purpose Low Current Amplification
Product OverviewThe 2N3906 is a Silicon PNP transistor in a TO-92 Plastic Package. It is designed for general purpose amplification with low current and low voltage characteristics.Product AttributesBrand: JSMICRO SemiconductorPackage Type: TO-92 Plastic PackageTransistor Type: PNP Silicon TransistorTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector to Base VoltageVCBOIC=-10A IE=0-40VCollector to Emitter VoltageVCEOIC=-1.0mA IB=0-40VEmitter to Base
General purpose switching and amplifier transistor JSMSEMI MMBT2907A PNP type with planar die design
Product OverviewThe MMBT2907A is a PNP general-purpose amplifier and switching transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications, with a useful dynamic range extending to 600mA as a switch and to 100MHz as an amplifier. A complementary NPN type, the MMBT2222A, is also available.Product AttributesBrand: JSMICRO SemiconductorPackage Type: SOT-23Certifications: JEDEC Class 3A (ESD HBM)Technical
Silicon PNP Darlington Power Transistor JSMSEMI MJD127T4G-JSM for Amplifier and Switching Applications
Product OverviewThe MJD127T4G is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, high DC current gain, and is 100% avalanche tested, ensuring robust device performance and reliable operation. The lead is formed for surface mount applications.Product AttributesBrand: JSMICRO SemiconductorMaterial: SiliconTechnical SpecificationsParameterSymbolCondition
PNP silicon power transistor JSMSEMI TIP42C suitable for medium power linear switching applications
Product OverviewThe TIP42 series is a complementary PNP silicon power transistor in a TO-220 plastic package, designed for medium power linear switching applications. It offers robust performance for amplification tasks.Product AttributesBrand: JSMICRO SemiconductorComplementary to: TIP41Technical SpecificationsParameterSymbolTIP42TIP42ATIP42BTIP42CUnitTest ConditionsMinTypMaxCollector to Base VoltageVCBO-40-60-80-100VCollector to Emitter VoltageVCEO-40-60-80-100VEmitter to
Silicon Epitaxial Planar Type Transistor JSMSEMI SS8050 Suitable for Circuits Requiring 1.5A Current
Product OverviewThe JSMICRO Semiconductor SS8050 is a Silicon Epitaxial Planar Transistor designed for high collector current applications. It offers a continuous collector current of 1.5A and is complementary to the SS8550 transistor. This device is suitable for various electronic circuits requiring robust current handling capabilities.Product AttributesBrand: JSMICRO SemiconductorModel: SS8050Material: Silicon Epitaxial PlanarPackage Type: TO-92Origin: Not specifiedColor:
transistor JSMSEMI NJW0302G-JSM for audio power amplifiers and various electronic circuit applications
Product OverviewThe NJW0281G/NJW0302G are semiconductor discrete devices designed for general amplification circuits, audio power amplifiers, power supply regulation, and other electronic circuits. These transistors offer high breakdown voltage, low leakage current, and superior frequency characteristics, making them suitable for demanding applications.Product AttributesBrand: JSMICRO SemiconductorModel Numbers: NJW0281G, NJW0302GProduct Type: Semiconductor Discrete
PNP Power Transistor JSMSEMI 2SA1492 Semiconductor Component for Audio and General Purpose Circuits
Product OverviewThe JSMICR0 Semiconductor PNP Power Transistor 2SA1492 is a high-performance component designed for audio and general-purpose applications. It features a high Collector-Emitter Breakdown Voltage of -180V (Min) and good linearity of hFE, making it a reliable choice for demanding circuits. It is a complement to the 2SC3856 type.Product AttributesBrand: JSMICR0Type: Semiconductor PNP Power TransistorModel: 2SA1492Origin: Not specifiedMaterial: Not specifiedColor:
High Current Gain Silicon NPN Transistor JSMSEMI 2N3055 Designed for Switching and Amplifier Applications
Product OverviewThe JSMICRO Semiconductor 2N3055 is a Silicon NPN Power Transistor designed for general-purpose switching and amplifier applications. It offers an excellent Safe Operating Area, a DC Current Gain (hFE) of 20-70 at IC = 4A, and a Collector-Emitter Saturation Voltage (VCE(sat)) of 1.1V (Max) at IC = 4A. It is a complement to the 2N2955 type.Product AttributesBrand: JSMICRO SemiconductorModel: 2N3055Material: Silicon NPNOrigin: Not specifiedColor: Not specifiedCe
NPN Power Transistor with High Voltage Capacity JSMSEMI MJE350G Collector Emitter Sustaining Voltage
Product OverviewThe MJE350G is an NPN Power Transistor designed for high voltage and general purpose applications. It offers a high collector-emitter sustaining voltage of -300V, a minimum DC current gain of 100 at -50mA, and a low collector saturation voltage of -1.0V (Max.) at -50mA. This transistor is the complement to the NPN MJE340.Product AttributesBrand: JSMICRO SemiconductorModel: MJE350GType: NPN Power TransistorTechnical SpecificationsSymbolParameterConditionsMinMax
