Single Bipolar Transistors
Silicon Epitaxial Planar Transistor for Amplifier Applications JSMSEMI 2SC3356-R25 VHF UHF CATV Bands
Product OverviewThe 2SC3356-R25 is a Silicon Epitaxial Planar Transistor designed for low noise amplifier applications in VHF, UHF, and CATV bands. It offers excellent low noise characteristics (NF=1.1dB TYP.) and high gain (Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz). It also provides high power gain (MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz).Product AttributesBrand: JSMICRO SemiconductorOrigin: Not specifiedMaterial: Silicon Epitaxial PlanarColor: Not specifiedCertifications:
Power Transistor JSMSEMI TIP2955 Silicon PNP Type TO247 Package Suitable for Switching and Amplifier
Product OverviewThe JSMICRO TIP2955 is a silicon PNP power transistor designed for general-purpose switching and amplifier applications. It features a TO-247 package and is a complement to the TIP3055. This transistor can handle 90 W at a 25C case temperature and a continuous collector current of 15 A.Product AttributesBrand: JSMICROMaterial: SiliconPackage: TO-247Complementary Type: TIP3055Technical SpecificationsSymbolParameterConditionsMinTyp.MaxUnitVCEO(SUS)Collector
JSMSEMI TIP127 JSM Silicon PNP Darlington Power Transistor with High Collector Current and Amplifier
Product OverviewThe TIP125/126/127 are Silicon PNP Darlington Power Transistors designed for general-purpose amplifier and low-speed switching applications. They feature a TO-220C package, high DC current gain, and low collector saturation voltage, making them a complementary type to the TIP120/121/122 series.Product AttributesBrand: JSMICRO SemiconductorMaterial: SiliconTechnical SpecificationsParameterConditionsTIP125TIP126TIP127UnitVCBO (Collector-base voltage)Open emitter
Plastic Encapsulated Transistor JSMSEMI SS8550 TO92 Package General Purpose Semiconductor Component
Product OverviewThe JSMICRO Semiconductor SS8550 is a plastic-encapsulated transistor in a TO-92 package. It is designed for general-purpose applications and offers reliable performance.Product AttributesBrand: JSMICRO SemiconductorDevice Code: SS8550Package: TO-92Packaging: Bulk, Tape & ReelTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitCollector-Base Breakdown VoltageV(BR)CBOIC=-100uA, IE=0-40VCollector-Emitter Breakdown VoltageV(BR)CEOIC=-0.1mA, IB=0
Low Noise Amplifier Transistor JSMSEMI 2SC3356-R25 Silicon Planar Type for VHF UHF CATV Applications
Product OverviewThe 2SC3356-R25 is a Silicon Epitaxial Planar Transistor designed for low noise amplification in VHF, UHF, and CATV bands. It offers low noise figure (NF=1.1dB TYP.) and high gain (Ga=11dB TYP., MAG=13dB TYP.), making it suitable for demanding RF applications.Product AttributesBrand: JSMICRO SemiconductorType No.: 2SC3356-R25Marking: R25Package Code: SOT-23-3LMaterial: Silicon Epitaxial Planar TransistorOrigin: Not specifiedColor: Not specifiedCertifications:
High Collector Current PNP Silicon Epitaxial Planar Transistor JSMSEMI S9012 with Stable Performance
Product OverviewThe S9012 is a PNP Silicon Epitaxial Planar Transistor designed for applications requiring high collector current. It offers complementary functionality to the S9013 and exhibits excellent HFE linearity. This transistor is suitable for various high collector current applications.Product AttributesBrand: JSMICRO SemiconductorModel: S9012Type: PNP Silicon Epitaxial Planar TransistorPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMINTYPMAXUni
Lead free PNP transistor JSMSEMI MMBT5401 featuring epitaxial planar die construction for medium power amplification
Product OverviewThe MMBT5401 is a PNP general-purpose transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications. A complementary NPN type, the MMBT5551, is also available. This transistor is offered in a lead-free version.Product AttributesBrand: JSMICRO SemiconductorPackage Type: SOT-23Material: Plastic surface mounted packageCertifications: Available in lead-free versionTechnical SpecificationsParameterSymb
High power NPN transistor JSMSEMI MJE3055T featuring 10 amp maximum collector current and TO 220 package type
Product OverviewThe MJE3055T is a high-power NPN transistor designed for general-purpose applications. It offers robust performance and reliability, making it suitable for various electronic circuits.Product AttributesBrand: ON SemiconductorOrigin: MalaysiaTechnical SpecificationsParameterValueTypeNPNMaximum Collector Current (Ic)10 AMaximum Collector-Emitter Voltage (Vce)60 VMaximum Collector-Base Voltage (Vcb)60 VMaximum Emitter-Base Voltage (Veb)7 VMaximum Power Dissipatio
High current high voltage silicon epitaxial planar transistor JSMSEMI C1815 designed for amplifier applications
Product OverviewThe C1815 is a silicon epitaxial planar transistor designed for general-purpose amplifier applications. It offers high voltage and high current capabilities with excellent hFE linearity and low noise. This complementary transistor to the 2SA1015 is available in a SOT-23 package.Product AttributesBrand: JSMICRO SemiconductorMaterial: Silicon Epitaxial PlanarPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMINTYPMAXUNITBreakdown VoltageV(BR
NPN Medium Power Transistor JSMSEMI BCX55-16-JSM Suitable for Audio Frequency Driver and Output Stages
Product OverviewThe BCX54/BCX55/BCX56 series are NPN medium power transistors designed for AF driver and output stages. They offer high collector current, low collector-emitter saturation voltage, and are complementary to the BCX51-BCX53 (PNP) series. These transistors are available in a SOT-89 package.Product AttributesBrand: JSMICRO SemiconductorPackage Type: SOT-89Complementary Types: BCX51BCX53 (PNP)Technical SpecificationsType No.MarkingCollector-Base Voltage (V
Epitaxial Planar Die NPN Transistor JSMSEMI 2N5551 for Medium Power Amplification and Switching Uses
Product OverviewThe JSMICRO Semiconductor 2N5551 is an NPN General Purpose Transistor, ideal for medium power amplification and switching applications. It features an epitaxial planar die construction and is also available in a lead-free version. A complementary PNP type is also available.Product AttributesBrand: JSMICRO SemiconductorModel: 2N5551Type: NPN General Purpose TransistorConstruction: Epitaxial planar dieAvailability: Lead-free version availableComplementary Type:
NPN Switching Transistor JSMSEMI MMBT3904 SOT23 Package General Purpose Amplification and Switching
MMBT3904 NPN Switching TransistorThe MMBT3904 is an NPN epitaxial planar die construction switching transistor designed for general switching and amplification applications. It offers a complementary PNP type (MMBT3906) and is available in a SOT-23 package.Product AttributesBrand: JSMICRO SemiconductorComplementary PNP Type: MMBT3906Package: SOT-23MSL: 1Technical SpecificationsSymbolParameterConditionsValueUnitVCBOCollector-base voltageOpen emitter60VVCEOCollector-emitter
Low noise PNP transistor JSMSEMI S9015 complementary to S9014 designed for pre amplifier applications
Product OverviewThe S9015 is a PNP transistor designed for low-level, low-noise pre-amplifiers. It is complementary to the S9014 transistor and offers good linearity characteristics. The marking for this transistor is M6.Product AttributesBrand: JSMICRO SemiconductorType: PNP TransistorComplementary to: S9014Marking: M6Technical SpecificationsParameterSymbolTest ConditionsMinMaxUnitCollector-Base VoltageVCBO-50VCollector-Emitter VoltageVCEO-45VEmitter-Base VoltageVEBO
PNP transistor JSMSEMI FMMT591-JSM featuring SOT-23 package for general purpose electronic circuits
Product OverviewThe FMMT591 is a PNP transistor in a SOT-23 package, designed for general-purpose applications. It offers key electrical characteristics suitable for various electronic circuits.Product AttributesBrand: JSMICRO SemiconductorPackage: SOT-23Technical SpecificationsParameterSymbolTest conditionsMINMAXUnitsCollector-Base VoltageVCB-50VCollector-Emitter VoltageVCEO-25VEmitter-Base VoltageVEBO-5VCollector Current -ContinuousIC-1.8ACollector Power DissipationPCTA=250
High DC Current Gain PNP Darlington Power Transistor JSMSEMI MJE700T-JSM for Amplifier and Switching
Product OverviewThe MJE700T is a PNP Darlington Power Transistor designed for general-purpose amplifier and low-speed switching applications. It offers a high DC Current Gain (hFE) of 750 minimum at IC=-1.5 A and a Collector-Emitter Breakdown Voltage of -60 V. It is a complement to the MJE800 type.Product AttributesBrand: JSMICRO SemiconductorType: PNP Darlington Power TransistorComplementary Type: MJE800Technical SpecificationsSymbolParameterConditionsValueUnitV(BR
TO220 Package PNP Silicon Transistor JSMSEMI 2SA940 Suitable for Power Amplifier and Output Circuits
Product OverviewThe 2SA940 is a PNP silicon power transistor housed in a TO-220 plastic package. It is complementary to the 2SC2073 and is designed for power amplifier and vertical output applications. This transistor offers reliable performance for various electronic circuits.Product AttributesType: PNP Silicon TransistorPackage: TO-220 Plastic PackageComplementary to: 2SC2073Technical SpecificationsParameterSymbolRating UnitTest ConditionsMinTypMaxUnitCollector to Base
Electronic Applications PNP Silicon Transistor JSMSEMI S8550 Featuring Defined Electrical Parameters
Product OverviewThe S8550 is a PNP Silicon General Purpose Transistor designed for various electronic applications. It offers reliable performance with clearly defined electrical characteristics and absolute maximum ratings.Product AttributesBrand: JSMICRO SemiconductorComplementary to: S8050Technical SpecificationsParameterSymbolMin.Typ.Max.UnitTest ConditionsCollector-base Breakdown VoltageV(BR)CBO-40--VIC = -100 A, IE = 0Collector-emitter Breakdown VoltageV(BR)CEO-25--VIC
NPN Silicon Epitaxial Planar Transistor JSMSEMI SS8050 with 1.5A Collector Current in SOT23 Package
Product OverviewThe SS8050 is an NPN Silicon Epitaxial Planar Transistor designed for high collector current applications. It offers a continuous collector current of up to 1.5A and a collector dissipation of 300mW at 25. Its complementary type is the SS8550. The transistor is supplied in a SOT-23 package.Product AttributesBrand: JSMICRO SemiconductorMaterial: Silicon Epitaxial PlanarPackage Type: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMINTYPMAXUnitsMAXIM
Medium Power NPN Power Transistor JSMSEMI TIP31C TO220 Package Ideal Linear Switching Applications
Product OverviewThe JSMICRO Semiconductor TIP31/31A/31B/31C are NPN Power Transistors designed for medium power linear and switching applications. They feature a TO-220 package and are complements to the TIP32 series.Product AttributesBrand: JSMICRO SemiconductorPackage Type: TO-220Technical SpecificationsModelVCBO (V)VCEO (V)VEBO (V)IC (A)ICM (A)IB (A)PC (W)Tj (C)Tstg (C)VCEO(SUS) (V)VCEsat (V)VBE (V)ICES (mA)ICEO (mA)IEBO (mA)hFE-1hFE-2fT (MHz)TIP314040535140 (TC=25)2 (Ta
Transistor JSMSEMI MMBTH10 Silicon Epitaxial Planar Type Suitable for VHF UHF Frequency Applications
Product OverviewThe MMBTH10 is a Silicon Epitaxial Planar Transistor designed for high transition frequency applications. It offers efficient power dissipation and is suitable for VHF/UHF transistor applications.Product AttributesBrand: JSMICRO SemiconductorPackage Type: SOT-23Material: Silicon Epitaxial PlanarOrigin: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionsMINMAXUNITCollector-base breakdown voltageV
