Single Bipolar Transistors
Silicon NPN Power Transistor JSMSEMI TIP3055 90W Dissipation 15A Collector Current TO247 Package Type
Product OverviewThe TIP3055 is a silicon NPN power transistor designed for general-purpose switching and amplifier applications. It offers a robust 90W power dissipation at 25C case temperature and a continuous collector current of 15A. This transistor is the complement to the TIP2955 type.Product AttributesBrand: JSMICRO SemiconductorPackage: TO-247Material: SiliconTechnical SpecificationsSymbolParameterConditionsValueUnitVCEO(SUS)Collector-emitter sustaining voltageIC=30mA
NPN Transistor JSMSEMI S9013 Silicon Epitaxial Planar Type with 25V Collector Emitter Voltage Rating
Product OverviewThe S9013 is an NPN Silicon Epitaxial Planar Transistor designed for applications requiring high collector current. It offers excellent HFE linearity and is complementary to the S9012 transistor. With a power dissipation of 300mW, it is suitable for various electronic circuits.Product AttributesBrand: JSMICRO SemiconductorMaterial: Silicon Epitaxial PlanarPackage: SOT-23Technical SpecificationsParameterSymbolTest conditionsValueUnitsCollector-Base VoltageVCBO4
JSMSEMI BC847 JSM NPN transistor suitable for switching amplification and AF input stage applications
Product OverviewThe BC846/847/848 series are NPN general-purpose transistors designed for a wide range of applications. They offer high current gain, excellent hFE linearity, and low noise characteristics, making them suitable for AF input stages, driver applications, and general-purpose switching and amplification.Product AttributesBrand: JSMICRO SemiconductorPackage: SOT-23Technical SpecificationsType No.MarkingCollector-Base Voltage (V)Collector-Emitter Voltage (V)Emitter
NPN Transistor JSMSEMI BC846B with SOT 23 Package Providing Switching and Amplification Performance
Product OverviewThe BC846/847/848 series are NPN general-purpose transistors designed for a wide range of applications. They offer high current gain, excellent hFE linearity, and low noise characteristics, making them suitable for AF input stages, driver applications, and general-purpose switching and amplification.Product AttributesBrand: JSMICRO SemiconductorPackage: SOT-23Technical SpecificationsTypeMarkingPackageVCBO (V)VCEO (V)VEBO (V)IC (A)PC (mW)RJA (/W)TJ, TSTG ()V(BR
High power PNP transistor JSMSEMI MJ15025-JSM for audio and disk head positioner applications in TO-3 package
Product OverviewThe MJ15023-MJ15025 series are PNP power transistors designed for high power audio, disk head positioners, and other linear applications. They feature a high DC current gain (hFE = 15 Min @ IC = 8A), an excellent safe operating area, and are complementary to MJ15022 and MJ15024 types. Packaged in a TO-3 case.Product AttributesBrand: JSMICRO SemiconductorPackage Type: TO-3Technical SpecificationsSymbolParameterConditionsMJ15023 ValueMJ15025 ValueUnitVCEO(SUS
Power Transistor JSMSEMI MJE340G NPN Type with 100 DC Current Gain and 1 Volt Collector Saturation Voltage
Product OverviewThe MJE340G is an NPN Power Transistor designed for high voltage and general purpose applications. It features a Collector-Emitter Sustaining Voltage of 300V (Min), a DC Current Gain of 100 (Min) @ IC=50mA, and a low Collector Saturation Voltage of 1.0V (Max.) @ IC=50mA. It is a complement to the PNP MJE350.Product AttributesBrand: JSMICRO SemiconductorModel: MJE340GType: NPN Power TransistorTechnical SpecificationsSymbolParameterConditionsMinMaxUnitVCEO(SUS
Low Frequency Amplifier Transistor JSMSEMI A1015 Silicon Epitaxial Planar with High Current and Voltage Ratings
Product OverviewThe A1015 is a Silicon Epitaxial Planar Transistor designed as a complementary device to the 2SC1815. It offers excellent HFE linearity, high voltage and current capabilities, and low noise performance. With a Collector-Emitter voltage (BVCEO) of -50V, it is suitable for low frequency, low noise amplifier applications.Product AttributesBrand: JSMICRO SemiconductorPackage Type: SOT-23Complementary To: 2SC1815Technical SpecificationsParameterSymbolTest
High power NPN transistor JSMSEMI MJ15022G-JSM designed for disk head positioners and audio circuits
Product OverviewThe MJ15022/15024G are NPN power transistors designed for high power audio, disk head positioners, and other linear applications. They feature an excellent safe operating area and high DC current gain. These transistors are complements to the MJ15023G and MJ15025G types and come in a TO-3 package.Product AttributesBrand: JSMICRO SemiconductorPackage Type: TO-3Technical SpecificationsSymbolParameterConditionsMJ15022GMJ15024GUnitVCEO(SUS)Collector-emitter
High voltage PNP transistor JSMSEMI MMBTA92 ideal choice for medium power switching and amplification
Product OverviewThe MMBTA92 is a PNP high voltage amplifier transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications, particularly in high voltage driver circuits. A complementary NPN type, the MMBTA42, is also available.Product AttributesBrand: JSMICRO SemiconductorPackage Type: SOT-23Technical SpecificationsSymbolParameterTest ConditionsMin.Max.UnitMAXIMUM RATING @ Ta=25VCBOCollector-base voltage
Medium power amplification switching transistor JSMSEMI MMBT5551 NPN epitaxial planar die technology
Product OverviewThe MMBT5551 is an NPN general-purpose transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications. A complementary PNP type (MMBT5401) is available, and a lead-free version is also offered.Product AttributesBrand: JSMICRO SemiconductorPackage Type: SOT-23Certifications: Lead-free version availableTechnical SpecificationsSymbolParameterTest ConditionsMin.Max.UnitV(BR)CBOCollector-base breakdown
High Collector Current NPN Transistor JSMSEMI S8050 with Excellent HFE Linearity and Complementary S8550
Product OverviewThe S8050 is an NPN Silicon Epitaxial Planar Transistor designed for applications requiring high collector current. It offers excellent HFE linearity and high total power dissipation, making it a complementary part to the S8550. This transistor is suitable for various high collector current applications.Product AttributesBrand: JSMICRO SemiconductorMaterial: Silicon Epitaxial PlanarPackage Type: SOT-23Complementary Part: S8550Technical SpecificationsParameterS
High power audio linear application transistor JSMSEMI MJ15024G JSM NPN power transistor TO3 package
Product OverviewThe MJ15022/15024 are NPN power transistors designed for high power audio, disk head positioners, and other linear applications. They feature a TO-3 package, complement to MJ15023/MJ15025, excellent safe operating area, and high DC current gain.Product AttributesBrand: JSMICRO SemiconductorPackage Type: TO-3Complementary Types: MJ15023, MJ15025Technical SpecificationsSymbolParameterConditionsMJ15022MJ15024UnitAbsolute Maximum RatingsVCBOCollector-base
Low Frequency Amplifier Transistor JSMSEMI 2SC5200-O-JSM with 230V Vceo and 16A Collector Current
Product OverviewThe 2SA1943/2SC5200 are semiconductor discrete devices designed for low-frequency amplification. They offer high breakdown voltage, low leakage current, and superior frequency characteristics, making them suitable for general amplification circuits, audio power amplifiers, power supply regulation, and other electronic circuits.Product AttributesBrand: JSMICRO SemiconductorOrigin: Not specifiedMaterial: SemiconductorColor: Not specifiedCertifications: Not
PNP Epitaxial Silicon Transistor JSMSEMI 2SA1837-O for Amplifier Applications Featuring High Voltage
Product OverviewPNP Epitaxial Silicon Transistor designed for Power Amplifier Applications. Key features include a high collector voltage of VCEO = -230V (min) and a high transition frequency of fT = 70MHz (Typ.). This device is complementary to the 2SC4793 and is a RoHS product.Product AttributesBrand: JSMICRO SemiconductorMaterial: Epitaxial SiliconCertifications: Halogen Free, RoHSTechnical SpecificationsOrder CodesMarkingPackagePackagingCollector-Emitter Voltage (VCBO
NPN epitaxial Darlington transistor GOODWORK TIP122 medium power linear switching electronic component
Product OverviewThe TIP122 is an NPN Epitaxial Darlington Transistor designed for medium power linear and switching applications. It offers complementary functionality to the TIP127.Product AttributesBrand: Not SpecifiedOrigin: Not SpecifiedMaterial: Plastic-Encapsulate TransistorsColor: Not SpecifiedCertifications: Not SpecifiedTechnical SpecificationsSymbolParameterConditionsMinTypMaxUnitVCEO(sus)Collector-Emitter Sustaining VoltageIC = 100mAIB = 0100VICBOCollector-base cut
Compact SOT89 NPN Transistor Goodwork 2SC2873 Suitable for Various Switching and Amplifier Circuits
Product OverviewThe 2SC2873 is an NPN transistor featuring a small flat SOT-89 package, high-speed switching time, and low collector-emitter saturation voltage. It is complementary to the 2SA1213 and suitable for various applications requiring efficient switching.Product AttributesPackage: SOT-89Type: NPN TransistorComplementary to: 2SA1213Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector - Base VoltageVCBOIc= 100uA IE= 050VCollector - Emitter
High Current Silicon PNP Transistor for LCD Backlighting GOODWORK PBSS5350T GK SOT23 Plastic Package
Product OverviewThe PBSS5350T is a Silicon PNP transistor in a SOT-23 Plastic Package. It features low VCE(sat) and high current capabilities, making it suitable for general-purpose switching and muting applications, including LCD back-lighting and supply line switching circuits.Product AttributesBrand: DEMACHELPackage Type: SOT-23Transistor Type: Silicon PNPMarking Code: ZDHTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector Cut-Off CurrentICBOVCB=
PNP transistor epitaxial planar die GOODWORK PMBT3906 GK designed for electronic circuit performance
Product OverviewThe PMBT3906 is a PNP epitaxial planar die construction transistor designed as a complementary type to the NPN transistor MMBT3904. It is suitable for various electronic applications requiring reliable transistor performance.Product AttributesMarking Type number: PMBT3906Marking code: 2AConstruction: Epitaxial planar dieType: PNP TRANSISTORTechnical SpecificationsParameterSymbolTest conditionsMinMaxUnitCollectorBase VoltageVCBO-40VCollectorEmitter VoltageVCEO
NPN transistor GOODWORK MMBTA42 designed to support peak collector current in electronic applications
MMBTA42 NPN Transistor The MMBTA42 is an NPN transistor designed for high breakdown voltage and low collector-emitter saturation voltage. It serves as a complementary part to the MMBTA92. This transistor is suitable for various electronic applications requiring reliable switching and amplification. Product Attributes Marking Type: MMBTA42 Marking Code: 1D Technical Specifications Symbol Parameter Test conditions Min Max Unit VCBO CollectorBase Voltage 300 V VCEO CollectorEmit
NPN Transistor GOODWORK MJE182 Designed for Low Current High Speed Switching and Amplification
MJE182 NPN TO-126 Plastic-Encapsulate TransistorsThe MJE182 is an NPN transistor designed for low power audio amplification and low current high-speed switching applications. It offers high current output up to 3A, low saturation voltage, and is a complement to the MJE172 transistor.Product AttributesPackage: TO-126 Plastic-EncapsulateTechnical SpecificationsParameterSymbolConditionsMinTypMaxUnitBreakdown VoltageBVCBOIC = 100A, IE = 0100VBVCEOIC = 1mA, IB = 080VBVEBOIE = 100A
