Single FETs, MOSFETs

Product OverviewThe LG50N10AP/T is an N-Channel Advanced Power MOSFET designed for efficient power switching applications. It features fast switching speeds, low ON resistance, and low gate charge, making it ideal for power switch circuits in adaptors and chargers. The MOSFET is available in TO-220C and TO-263C packages.Product AttributesBrand: LGChannel Type: N-ChannelTechnology: Advanced Power MOSFETCertifications: EU RoHS 2011/65/EU directive compliantMaterial: Molded

Product OverviewThe XR30J03D is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, contributing to efficient power conversion. This device is RoHS and Green Product compliant, with 100% EAS guaranteed and full functional reliability.Product AttributesBrand: XR (implied from product name)Certifications: RoHS, Green ProductFeatures: Fast Switching, Super Low Gate Charge

AP40N100K DATA SHEETThis document provides detailed information for the AP40N100K product from ZHEJIANG UNIU-NE Technology CO.,LTD. The product is designed for high-quality, stable, reliable, environmentally friendly, energy-saving, and efficient applications.Product AttributesBrand: UNI-SEMICOrigin: ZHEJIANG UNIU-NE Technology CO.,LTDCompany Name: Copyright: Technical SpecificationsPart NumberVds (V)Id (A)Rds(on) (m)Qg (nC)PackageVgs(th) (V)Vgs (V)Idm (A)Pd (W)Tj (

Product OverviewThe SL6800C is a dual N-Channel TrenchFET Power MOSFET designed for efficient power management. It features low gate charge and low on-resistance, making it suitable for various surface-mount applications. Its robust design ensures reliable performance with high current handling capabilities.Product AttributesBrand: SLKormicroPackage: SOT-23-6LTechnical SpecificationsParameterConditionMinTypMaxUnitElectrical CharacteristicsDrain-Source Breakdown Voltage (BV(BR

Product OverviewThe 2N7002KT is a Plastic-Encapsulate MOSFET in a SOT-523 package. It offers low on-resistance (RDS(ON)), low gate threshold voltage, low input capacitance, and ESD protection up to 2KV. This device is suitable for various applications requiring efficient switching and low power consumption.Product AttributesBrand: tw-gmc.comProduct Code: 2N7002KTPackage Type: SOT-523Marking: K72Technical SpecificationsParameterSymbolMin.Max.UnitConditionsDrain Source

Product OverviewThe UMW IPP015N04N is a 40V N-Channel MOSFET designed for high-performance switching applications. It features fast switching speeds, very low on-resistance (RDS(ON)), and an excellent gate charge x RDS(ON) product (FOM), making it ideal for Switched-Mode Power Supplies (SMPS) and DC/DC converters. Optimized technology ensures efficient operation in demanding power applications.Product AttributesBrand: UMWOrigin: UTD Semiconductor Co., LimitedCertifications:

Product OverviewThe 30P06-VB is a P-Channel 60V Trench Power MOSFET designed for load switching applications. It offers low on-resistance and is suitable for various electronic circuits requiring efficient power management.Product AttributesBrand: VBsemiMaterial Categorization: RoHS Compliant, Halogen-FreePackage: TO-252Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitStatic CharacteristicsDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = - 250 A- 60VGate

SIR422DP-T1-GE3-VB N-Channel MOSFET The SIR422DP-T1-GE3-VB is a high-performance N-Channel Trench Power MOSFET designed for demanding applications. It features low on-resistance and high current handling capabilities, making it suitable for core power delivery in notebook PCs and Voltage Regulator Modules (VRMs/POLs). Product Attributes Brand: VBsemi Origin: Taiwan Certifications: RoHS compliant Technical Specifications Parameter Symbol Test Conditions Min Typ. Max. Unit

Product OverviewThe FDN306P is a P-Channel MOSFET featuring Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). It offers high-speed switching capabilities, making it suitable for battery protection, load switching, and power management applications.Product AttributesBrand: slkormicroModel: FDN306PPackage: SOT-23Technical SpecificationsParameterConditionMinTypMaxUnitAbsolute Maximum RatingsVDS-12VVGS±8VTJ150°CTSTG-55150°CISTc=25°C-2.6AIDMTc=25°C

Product OverviewThe X4N50DHE2 is an N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching, making it suitable for applications such as LED power supplies, cell phone chargers, and standby power.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Model: X4N50DHE2Package: TO-252-2LPackaging: Tape & ReelTechnical SpecificationsParameterSymbolMinTypMaxUnitNote/Test ConditionsAbsolute Maximum

Product OverviewThe IPD78CN10N G-VB is a N-Channel Trench Power MOSFET designed for primary side switching applications. It offers a 100 V Drain-Source voltage rating and is 100% UIS tested, ensuring reliability in demanding applications. Key advantages include its trench power MOSFET structure and robust performance characteristics.Product AttributesBrand: VBsemiModel: IPD78CN10N G-VBPackage: TO-252Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitDrain

Product OverviewThe SL4459 P-Channel MOSFET utilizes advanced trench technology, offering excellent RDS(ON) and low gate charge. It operates with gate voltages as low as 4.5V, making it suitable for load switch and PWM applications. This device provides high power and current handling capability.Product AttributesBrand: SLKORCertifications: Lead free product is acquiredTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitAbsolute Maximum RatingsDrain-Source VoltageVDS

WTM40N65AF/AMP/ATL 650V N-Channel Multi-EPI Super-Junction MOSFET This Power MOSFET is produced using WPMteks advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies. Product Attributes Brand: WPMtek Origin: Not

Product OverviewThe SL3139T is a P-Channel MOSFET designed for load and power switching applications. It features a low RDS(on) and operates at low logic level gate drive, making it suitable for battery management and interfacing in ultra-small portable electronics. This lead-free product comes in a surface mount package.Product AttributesBrand: SLKORMicroOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Lead FreeTechnical SpecificationsParameter

Product OverviewThe FH30150D is an N-Channel Trench Power MOSFET from SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD. It features advanced trench technology, providing excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management, offering high performance with a 30V drain-source voltage and 150A continuous drain current.Product AttributesBrand: XIN FEI HONG ELECTRONICS CO.,LTDModel: FH30150DOrigin:

Product OverviewThe SI9430DY-T1-E3-VB is a P-Channel 20-V (D-S) MOSFET designed for various portable device applications. It features Trench Power MOSFET technology, 100% Rg testing, and compliance with RoHS Directive 2002/95/EC. This device is suitable for use as a load switch, battery switch, and charger switch.Product AttributesBrand: Vishay (implied by datasheet format and common industry practice, though not explicitly stated as 'brand')Origin: Taiwan (implied by www

Product OverviewThe YJT300G10AQ is an N-Channel Enhancement Mode Field Effect Transistor designed for high-power applications. It features excellent heat dissipation, a high-density cell design for low RDS(ON), and meets UL 94 V-0 flammability rating. This product is AEC-Q101 qualified, making it suitable for automotive electronics. Key applications include high power inverter systems, uninterruptible power supplies, and LCDM appliances.Product AttributesBrand: Yangzhou

Product OverviewThis P-Channel MOSFET features leading trench technology for low RDS(on), making it ideal for extending battery life in various applications. It is designed for high-side load switching, charging circuits, and single-cell battery applications found in devices like cell phones, digital cameras, and PDAs.Product AttributesBrand: SLKORMicroDevice Code: TS1Package: SOT-323Revision: Rev.1Date: 21 June 2017Technical SpecificationsParameterSymbolConditionMinTypMaxUni

Product OverviewThe GSW77N65EF is a low-voltage N-channel Multi-EPI Super-Junction Power MOSFET from XCH Semiconductor. It features revolutionary high-voltage technology, offering superior RDS(on) in a TO-247 package, ultra-low gate charge, and excellent avalanche and dv/dt characteristics. This advanced MOSFET is designed for high-performance applications requiring fast switching times, low on-resistance, and robust avalanche capabilities.Product AttributesBrand: XCH

Product OverviewThe YJG60G10BQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd., featuring split gate trench MOSFET technology for low RDS(ON) and excellent heat dissipation. It is designed for high-frequency switching, synchronous rectification, and automotive systems (12V, 24V, and 48V). The device is 100% UIS and VDS tested, with a VDS of 100V and ID of 60A.Product AttributesBrand: Yangzhou Yangjie Electronic