Single FETs, MOSFETs
Power Management Transistor YANGJIE YJD18GP10AQ P Channel Enhancement Mode MOSFET with Excellent Uniformity
Product OverviewThe YJD18GP10AQ is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) and FOM, extremely low switching loss, and excellent stability and uniformity. This AEC...
power mosfet Winsok Semicon WSF35N20 n channel device with low leakage current and high reliability
Product OverviewThe WSF35N20 is a high-performance SGT N-Channel MOSFET characterized by its extreme cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function ...
Power MOSFET N channel Multi EPI Super Junction 650V 25A XCH GSA25N65EF designed for energy management
Product OverviewThe GSW/GSA25N65EF is a 650V, 25A N-channel Multi-EPI Super-Junction Power MOSFET from XCH Semiconductor. It features advanced technology for improved characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Automotive Grade P Channel MOSFET YANGJIE YJG80GP06BQ with Split Gate Trench Technology and RoHS Compliance
Product OverviewThe YJG80GP06BQ is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) and FOM with excellent stability and uniformity. This component is designed for power ...
Load Switching and High Frequency Circuit Transistor YANGJIE YJD50N03A N Channel Enhancement Mode MOSFET
Product OverviewThe YJD50N03A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers excellent heat dissipation with a high-density cell design for low RDS(ON). This transistor is suitable for high current load applications, load switching, ...
Power Management and Motor Drive N Channel Transistor YANGJIE YJG80G06B Featuring Low RDS ON Design
Product OverviewThe YJG80G06B is a N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. It features Split Gate Trench MOSFET technology, an excellent package for heat dissipation, and a high-density cell design for low RDS(ON). This ...
High speed switching N Channel MOSFET YANGJIE YJGD20G10B featuring low RDS ON and high density cell design
Product OverviewThe YJGD20G10B is a high-performance N-Channel and N-Channel Complementary MOSFET from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring a split gate trench MOSFET technology and a high-density cell design, it offers low RDS(ON) and high-speed switching capabilities. This ...
P Channel 20 Volt MOSFET VBsemi Elec NTMS10P02R2G VB for portable devices battery switches and charger switches
Product OverviewThe NTMS10P02R2G-VB is a P-Channel 20-V (D-S) Trench Power MOSFET designed for portable devices. It offers low on-resistance and is 100% Rg tested, compliant with RoHS directives. Key applications include load switches, battery switches, and charger switches.Product AttributesBrand: ...
Copper Baseplate Silicon Nitride Insulator Wolfspeed CAB320M17XM3 Silicon Carbide Half Bridge Module
Product Overview The Wolfspeed CAB320M17XM3 is a 1700 V, 3.5 m Silicon Carbide Half-Bridge Module designed for high power density applications. It features a high junction temperature operation of up to 175 C and a low-inductance design of 6.7 nH. This module implements Wolfspeeds third-generation ...
Synchronous buck converter P Channel MOSFET Winsok Semicon WSF12P04 featuring low gate charge and RDS
Product OverviewThe WSF12P04 is a high-performance P-Channel Trench MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed and approved for full ...
Silicon Carbide Half Bridge Module Wolfspeed CAB008A12GM3 Featuring Fail Safe Normally Off Operation
Product Overview The Wolfspeed CAB008A12GM3/CAB008A12GM3T is a 1200 V, 8 m Silicon Carbide Half-Bridge Module designed for high-frequency operation with ultra-low losses. It features zero turn-off tail current from the MOSFET and a normally-off, fail-safe device operation. The module utilizes an ...
6th Generation Silicon Carbide Diode Wolfspeed C6D50065D1 650 Volt 50 Amp Schottky Barrier Technology
Wolfspeed C6D50065D1: 6th Generation 650 V, 50 A Silicon Carbide Schottky Diode Product Overview The Wolfspeed C6D50065D1 is a 6th Generation 650 V, 50 A Silicon Carbide (SiC) Schottky Barrier Diode. Leveraging SiC technology, this diode offers significant performance advantages over traditional ...
High Voltage P Channel MOSFET VBsemi Elec VB2658 Offering 2.5 kVRMS Isolation and Low Thermal Resistance
Product OverviewThe VB2658 is a P-Channel 60-V (D-S) MOSFET designed for high-voltage applications. It features an isolated package with 2.5 kVRMS high voltage isolation, a sink to lead creepage distance of 4.8 mm, and a high operating temperature of 175 C. This MOSFET offers a dynamic dV/dt rating, ...
Trench Power MV MOSFET YANGJIE YJD25N10A N Channel Enhancement Mode Transistor for DC DC Converters
Product OverviewThe YJD25N10A is a N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation with a high-density cell design for low RDS(ON). This product is Moisture Sensitivity Level 1 and meets UL 94 V-0 flammability ...
Synchronous Buck Converter N Channel MOSFET Winsok Semicon WSD80N10GDN56 featuring low gate charge
Product OverviewThe WSD80N10GDN56 is a high-performance N-Channel MOSFET featuring an extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed ...
Low RDS ON High Speed Switching N Channel Enhancement Mode Field Effect Transistor YANGJIE YJL3404B
Product OverviewThe YJL3404B is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers a high-density cell design for low RDS(ON), high-speed switching, and is designed for applications such as battery protection, load switching, and power ...
Low Input Capacitance and Fast Switching Speed N Channel MOSFET YANGJIE 2N7002C with RoHS Compliance
Product OverviewThe 2N7002C is an N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power MV MOSFET technology. It is designed as a voltage-controlled small signal switch with low input capacitance and fast switching speed. This transistor offers low input/output leakage, is ...
Robust Power MOSFET Winsok Semicon WSK55N20 N Channel Device with Superior Electrical Characteristics
Product OverviewThe WSK55N20 is a high-performance N-Channel MOSFET featuring extreme cell density, offering excellent RDS(ON) and gate charge characteristics. It is ideally suited for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS ...
High reliability Winsok Semicon WSF6032 N Channel and P Channel MOSFET for DC DC converter circuits
Product OverviewThe WSF6032 is a high-performance N-Channel and P-Channel MOSFET featuring extreme high cell density, offering excellent RDSON and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function ...
High Current P Channel MOSFET XYD X4407IA for Portable Devices and Desktop PC Power Management
Product OverviewThe X4407IA is a P-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers high power and current handling capability with low gate charge, making it suitable for switch and power management applications in portable and desktop PCs. This lead-free product is designed ...
