Single FETs, MOSFETs

Product OverviewThe GSx11N65E is a low-voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. Designed with advanced technology, it offers enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This series is suitable for voltage applications up to 1000 volts.Product AttributesBrand: XCH SemiconductorSeries: Multi-EPI Super-JunctionChannel Type: N-channelTechnical

Product OverviewThe YJS4435B is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology for low RDS(ON) and high-speed switching. Designed for applications such as battery protection, load switches, and power management, it offers a VDS of -30V and a continuous drain current (ID) of -10A. This device is 100% EAS tested and meets UL 94 V-0 flammability rating.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Model

Product Overview The FKN6008 is a high cell density trenched N-channel MOSFET offering excellent RDSON and efficiency, ideal for small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Product Attributes Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Meets RoHS and Green Product requirement Technical Specifications

Product OverviewThe 10N65F is an N-Channel Enhancement Mode Power MOSFET designed for power switch circuits in adaptors and chargers. It features fast switching, low ON resistance, low gate charge, and 100% single pulse avalanche energy testing, making it a reliable component for efficient power management.Product AttributesMaterial: Molded plastic (UL Flammability Classification Rating 94V-0)Compliance: Lead free in compliance with EU RoHS 2011/65/EU directiveSoldering

Product OverviewThe WTM30N65AF/AMP/ATL/AP is a 650V N-Channel Super-Junction MOSFET designed for high-efficiency power conversion applications. It features low FOM (RDS(on) x Qg), extremely low switching loss, and excellent stability. This MOSFET is 100% avalanche tested and includes a built-in ESD diode, making it suitable for demanding applications.Product AttributesBrand: WPMtekProduct Series: WTM30N65AF/AMP/ATL/APTechnology: Super-Junction MOSFETChannel Type: N-ChannelESD

X8P5N030TLE2 N-CHANNEL MOSFETThe X8P5N030TLE2 is an N-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features extremely low on-resistance, fast switching, excellent low Ciss, and low gate charge, making it suitable for applications such as synchronous rectification for AC/DC quick chargers, battery management, and uninterruptible power supplies (UPS).Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Model: X8P5N030TLE2Package: TO-252

Product OverviewThe YJG40G10A is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, an excellent package for heat dissipation, and a high-density cell design for low RDS(ON). This transistor is designed for power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies.Product AttributesBrand: Yangzhou

Product OverviewThe YJD60N02A is a N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for high current load applications, load switching, hard switched and high frequency circuits, and uninterruptible power supply systems.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Model: YJD60N02ACertificati

Product OverviewThe X3402MB is an N-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features TrenchMOS technology for very fast switching and is logic level compatible. Its subminiature surface mount package makes it suitable for battery management, high-speed switching, and low-power DC to DC converters.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Origin: ChinaPackage: SOT-23-3LTechnology: TrenchMOSTechnical SpecificationsParameterSymb

Product OverviewThe BRT30N100P3 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features 30V drain-to-source voltage, 100A continuous drain current, and low on-resistance (RDS(ON)< 3.6m @ VGS = 10V). With advanced trench technology, it offers excellent RDS(ON) and low gate charge, making it suitable for load switch, PWM applications, and power management.Product AttributesBrand: XTX Technology Inc.Part Number: BRT30N100P3Package: TO-252-2LMarking:

Product OverviewThe X10N70DHC3 is an N-Channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers low gate charge, low Ciss, and fast switching, making it suitable for applications such as synchronous rectification for AC/DC quick chargers, battery management, and Uninterruptible Power Supplies (UPS).Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Model: X10N70DHC3Package: TO-220F-3LOrigin: China (implied by company location)Technical

Product OverviewThe YJQ3622A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers excellent heat dissipation through its package design and a high-density cell design for low RDS(ON). This transistor is suitable for high current load applications, load switching, hard switched and high frequency circuits, and uninterruptible power supplies.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Model:

Product OverviewThe BSS138B is a N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It serves as a voltage-controlled small signal switch with low input capacitance and fast switching speed. Designed for low input/output leakage, it is suitable for battery-operated systems and solid-state relays, offering direct logic-level interface capabilities for TTL/CMOS.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd

Product OverviewThe WSR110N20 is a high-performance N-Channel MOSFET featuring an advanced trench technology with extreme high cell density. This design offers excellent RDS(ON) and gate charge characteristics, making it suitable for battery protection and other switching applications. The WSR110N20 meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability approval.Product AttributesBrand: WinsokOrigin: Taiwan (implied by www.winsok

Product OverviewThe XR30P15F is a high-performance P-channel MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full functional reliability approval.Product AttributesBrand: power-mos.comCertifications: RoHS, Green Device Available, 100% EAS GuaranteedTechnical SpecificationsModelBVDSSRDS(ON

Product Overview The 8N65F is a 650V N-Channel VDMOS designed for high-efficiency power switching applications. It features fast switching speeds, low on-state resistance, and low input capacitance, making it suitable for chargers, LED drivers, and power adapters. This product complies with RoHS and other environmental directives and requires anti-static handling during use and storage. Product Attributes Certifications: RoHS and other environmental directives Technical

Product OverviewThe YJG60N04AQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a high-density cell design for low RDS(ON), an excellent package for heat dissipation, and is 100% EAS and VDS tested. This transistor is AEC-Q101 qualified and suitable for power switching applications, uninterruptible power supplies, and DC-DC converters.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co.,

YJS4407C P-Channel Enhancement Mode Field Effect TransistorThe YJS4407C is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology with a high-density cell design for low RDS(ON). It offers high-speed switching and is suitable for battery protection, power management, and load switch applications. The device meets UL 94 V-0 flammability rating and is Halogen Free.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd

Product OverviewThe XCH7N65M is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design reduces conduction losses, improves switching performance, and enhances avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and higher efficiency. The device is packaged in a RoHS-compliant TO-252 package.Product AttributesBrand: XCHMaterial: Silicon N-ChannelCertifications: RoHSTechnical

Product OverviewThe X48P030TLM3 is a P-Channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd., featuring Trench Power MOSFET technology for excellent RDS(ON). It is designed for load switching and other general applications, offering RoHS and Halogen-Free compliance.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Certifications: RoHS and Halogen-Free CompliantPackage: SOT-23-3LTechnical SpecificationsParameterSymbolValueUnitNote/Test ConditionsDrain