Single FETs, MOSFETs
Low leakage current MOSFET PANJIT 2N7002KW R1 00001 suitable for solid state relays and driver circuits
2N7002KW N-Channel Enhancement Mode MOSFETThe 2N7002KW is an N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in off-condition and is specially designed for battery-operated ...
Robust PIELENST AO4407A-L P Channel MOSFET with Avalanche Rated Capability and Fast Switching Speeds
Product OverviewThe AO4407A-L is a P-Channel enhancement MOS Field Effect Transistor designed for various power management applications. It features low RDS(ON), fast switching speeds, and a high-density cell design for improved performance. This device is avalanche rated, offers low leakage current...
30V N Channel MOSFET PANJIT PJE8404 R1 00001 featuring green molding compound and EU RoHS compliance
Product OverviewThe PPJE8404 is a 30V N-Channel Enhancement Mode MOSFET with ESD protection. It features advanced trench process technology and is specifically designed for switch load and PWM applications. This MOSFET offers low on-state resistance at various gate-source voltages and is compliant ...
Power MOSFET OSEN OSPF65R280 650V Super Junction with RoHS Compliance and Low RDSon Resistance
OSPF65R280 650V Super-Junction Power MOSFETThe OSPF65R280 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM (Figure of Merit) RDS(on), 100% avalanche tested, RoHS compliance, and improved dv/dt capability for high ruggedness. Ideal for high ...
Low On Resistance N Channel Enhancement Mode MOSFET PAKER SI2306 for Power Management Applications
Product OverviewThe SI2306 is an N-Channel Enhancement Mode Power MOSFET featuring a high-density cell design for ultra-low on-resistance. It utilizes advanced trench process technology and is housed in a SOT-23 small outline plastic package. This device is halogen-free and RoHS compliant, offering ...
N Channel Enhancement Mode MOSFET PANJIT PJA3460 60V Low On Resistance for Switching Applications
Product Overview The PPJA3460 is a 60V N-Channel Enhancement Mode MOSFET designed for efficient switching applications. It features low on-resistance (RDS(ON)) at various gate-source voltages and drain currents, utilizing an advanced trench process. This MOSFET is specifically engineered for switch ...
Enhancement Mode N Channel MOSFET ORIENTAL SEMI SFS06R03PF Suitable for Switched Mode Power Supplies
Product Overview The SFS06R03PF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique FSMOS technology. It is engineered for low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically designed for ...
P channel MOSFET transistor RENESAS NP36P06SLG E1 AY with low on state resistance and gate protection diode
Product OverviewThis P-channel MOS Field Effect Transistor (NP36P06SLG) is designed for high current switching applications. It features super low on-state resistance and low input capacitance, with a built-in gate protection diode. This product is designed for automotive applications and is AEC...
900V N Channel MOSFET OSEN 2SK2611 Featuring High Drain Current and Ruggedness for Power Electronics
2SK2611 900V N-CHANNEL MOSFET The 2SK2611 is a 900V N-CHANNEL MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high-efficiency ...
PANJIT PJA3401 R1 00001 P Channel MOSFET 30V with low on state resistance and halogen free material
Product OverviewThe PPJA3401 is a 30V P-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology and offers low on-state resistance at various gate-source voltages. This product is lead-free and compliant with EU RoHS 2011/65/EU ...
Low Voltage N Channel MOSFET OSEN OSD50N03T Ideal for Synchronous Rectification and Power Conversion
Product OverviewThe OSD50N03T is a Low Voltage N-channel MOSFET designed for applications requiring fast switching speeds, low gate charge, and high power/current handling capabilities. It is RoHS compliant and suitable for DC to DC converters and synchronous rectification.Product AttributesBrand: ...
rugged n channel mosfet osen irf840 designed for high voltage power factor correction and lamp ballast
Product OverviewThe IRF840 is a 500V N-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low level drive, and tested avalanche energy with improved dv/dt capability. This MOSFET is ideal for applications such as high ...
Power MOSFET OSEN OSPF65R650 650V Super Junction Device with Low Figure of Merit and RoHS Compliance
OSPF65R650 650V Super-Junction Power MOSFETThe OSPF65R650 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM (Figure of Merit) RDS(on) for reduced conduction losses, 100% avalanche tested for enhanced ruggedness, and improved dv/dt capability. ...
Dual channel transistor orisilicon OSM15N10X2 optimized for low gate charge and continuous current handling
Product OverviewThe OSM15N10 X2 is a dual-channel device featuring low on-resistance, continuous current capability, low gate charge, low gate voltage, and high current conduction capability. It is suitable for applications such as load switching and control. The device is housed in a package...
High Reliability Power MOSFET PJSEMI PJM10H06NSC with 6A Drain Current and Avalanche Voltage Rating
Product OverviewThe PJM10H06NSC is an N-Channel Enhancement Mode Power MOSFET designed for power switching applications, including uninterruptible power supplies. It features a high-density cell design for ultra-low RDS(on) and is fully characterized for avalanche voltage and current. With a VDS of ...
Enhancement Mode MOSFET ORIENTAL SEMI OSG80R250FF with Low Gate Charge and Robust Avalanche Capability
Product Overview The OSG80R250FF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Generic series. Engineered with charge balance technology, it delivers outstanding low on-resistance and reduced gate charge, minimizing conduction and switching losses. This MOSFET ...
Power MOSFET ORIENTAL SEMI OSG65R580DEF featuring GreenMOS E series technology for power management
Product Overview The OSG65R580DEF is a high-voltage N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS E series. Utilizing charge balance technology, it offers outstanding low on-resistance and lower gate charge, minimizing conduction loss and providing superior switching performance with ...
Energy n channel enhancement mode mosfet PANJIT 2N7002K R1 00001 with low on resistance and switching
2N7002K N-Channel Enhancement Mode MOSFET - ESD ProtectedThe 2N7002K is a 60V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in off-condition, making it ideal for battery...
Power MOSFET PJSEMI PJM70N30DL N Channel Device Featuring 30V VDS and 70A Continuous Drain Current
Product OverviewThe PJM70N30DL is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is 100% avalanche tested, RoHS compliant, and halogen and antimony free, making it suitable for applications requiring high reliability and environmental consciousness. This MOSFET ...
Complementary N Channel and P Channel power MOSFET PJSEMI PJM06C40PA for electronic power management
Product OverviewThe PJM06C40PA is a complementary N-Channel and P-Channel Power MOSFET designed for power management applications. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant, making it a reliable choice for various electronic designs.Product ...
