Single FETs, MOSFETs
Power Switching MOSFET Siliup SP010N45GTH 100V N Channel with Low RDSon and Split Gate Trench Technology
SP010N45GTH 100V N-Channel Power MOSFET Product Overview The SP010N45GTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for battery management and uninterruptible power supply systems. Product Attributes Brand
Power MOSFET Siliup SP40N05GDNK 40V Dual N Channel Device for DC DC Converters and Motor Control Applications
Product Overview The SP40N05GDNK is a 40V Dual N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features advanced split gate trench technology, offering fast switching, low gate charge, and low RDS(on). This MOSFET is designed for applications such as DC-DC converters and motor control. It is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: SP40N05GDNK Package: PDFN5X6-8L
Low On Resistance P Channel MOSFET 16V Siliup SP16P03NJ Suitable for Power Management and Conversion
Product Overview The SP16P03NJ is a 16V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance, and 100% single pulse avalanche energy testing. This MOSFET is ideal for applications such as DC-DC converters and power management systems. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP16P03NJ Technology: P-Channel MOSFET Package: PDFN3X3-8L Origin: China (implied by www.siliup.com
SOT 23 3L Package P Channel MOSFET Siliup SP3401AT1 30V Device for Battery Switch and DC DC Converter
Product Overview The SP3401AT1 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It features a SOT-23-3L package for efficient integration into electronic circuits. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: P-Channel MOSFET Package: SOT-23-3L Device Code: 3401A Technical
N Channel Power MOSFET Siliup SP010N10GP8 100V Low Gate Charge Fast Switching Device
Product Overview The SP010N10GP8 is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. This MOSFET has undergone 100% single pulse avalanche energy testing and is suitable for battery management and uninterruptible power supply systems. Product Attributes Brand: Siliup Semiconductor Technology Co.
20V P Channel MOSFET Siliup SP20P25T2 suitable for battery switch and power conversion surface mount
Product Overview The SP20P25T2 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers robust performance with a continuous drain current of -5.5A and low on-resistance. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: P-Channel MOSFET Package: SOT-23 Device Code: 20P25
Compact SOT523 TrenchFET Power MOSFET TWGMC SI2302T for Load Switch and DC DC Converter Applications
Product OverviewThe SI2302T is a TrenchFET Power MOSFET designed as a load switch for portable devices and DC/DC converters. It offers efficient power management in a compact SOT-523 package.Product AttributesBrand: GMC (implied by www.tw-gmc.com)Device Code: R5Technical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-Source VoltageVDS20VGate-Source VoltageVGS8VContinuous Drain CurrentID2.1AContinuous Source-Drain Current(Diode Conduction)IS0.6APower Dissipation
Low RDS on 85V N Channel MOSFET Siliup SP85N04AGHTD Suitable for DC DC Converters and Power Switching
Product Overview The SP85N04AGHTD is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This device is 100% tested for single pulse avalanche energy and is designed for power switching applications, PWM applications, and DC-DC converters. It comes in a TO-263 package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd.
SL30N06D MOSFET Featuring Trench Technology and Fully Characterized Avalanche Current for Reliability
Product OverviewThe SL30N06D is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. Its high-density cell design ensures ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current, offering good stability and uniformity with high EAS. The device features an excellent package for good heat dissipation and special process technology for high ESD capability, making
Power Switching N Channel MOSFET Siliup SP30N16TC 30V with 5.6A Continuous Drain Current and Low RDSon
Product Overview The SP30N16TC is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a typical RDS(on) of 16m at 10V and 24m at 4.5V, with a continuous drain current of 5.6A. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: N-Channel MOSFET Package Type: SOT-223 Technical
Dual N Channel MOSFET power switching device Siliup SP60N80DP8 with 60V voltage rating and low RDSon
Product Overview The SP60N80DP8 is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for hard-switched and high-frequency circuits, including Uninterruptible Power Supplies. It is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line: SP60N80DP8
Power MOSFET Siliup SP85N05AGHNK N Channel 85V Device with Low RDSon and Compact PDFN5X6 8L Package
Product Overview The SP85N05AGHNK is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It is available in a PDFN5X6-8L package. Product Attributes Brand: Siliup Semiconductor
N Channel 40V MOSFET Featuring Split Gate Trench Technology Siliup SP40N05GNJ for DC DC Converters
Product Overview The SP40N05GNJ is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co., Ltd. It features fast switching speed, low Gate Charge, and low RDS(on), enabled by advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters, motor control, and portable equipment. Product Attributes Brand: Siliup Semiconductor Technology Co., Ltd. Product Code: SP40N05GNJ
800V N Channel Planar MOSFET Siliup SP2N80TH Featuring Low RDS on and Fast Switching for Power Conversion
Product Overview The SP2N80TH is an 800V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-frequency switching applications. It features fast switching speeds, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters and synchronous rectification. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 2N80 Package: TO-252 Technical Specificat
Power Switching MOSFET Siliup SP010N07GHTH 100V N Channel with Low RDSon and Split Gate Trench Technology
Product Overview The SP010N07GHTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supplies. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:
High Current 60V N Channel MOSFET Siliup SP60N01BGTQ Suitable for Power Switching and Battery Systems
Product Overview The SP60N01BGTQ is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as chargers, battery management, and power switching. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 60N01BG Package: TO
Low Gate Charge and Fast Switching MOSFET Siliup SP30N03BTH 30 Volt N Channel for Power Management
Product Overview The SP30N03BTH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it ideal for high-frequency switching and synchronous rectification applications. This MOSFET is designed for DC-DC converters and has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 30N03B Package: TO-252 Technical
40 Volt P Channel MOSFET Siliup SP40P28T1 with 28 Milliohm RDS on and 6 Amp Continuous Drain Current
Product Overview The SP40P28T1 is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers excellent performance with a typical RDS(on) of 28m at -10V and 38m at -4.5V, and a continuous drain current of -6A. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: P-Channel MOSFET
60V N Channel MOSFET Siliup SP60N01BGHTO Featuring Split Gate Trench Technology for Power Conversion
Product Overview The SP60N01BGHTO is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters and power management systems. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd
100V N Channel Planar MOSFET Siliup SP540TQ designed for synchronous rectification and power control
Product Overview The SP540TQ is a 100V N-Channel Planar MOSFET designed for efficient power management. It features fast switching, low gate charge, and low Rdson, making it ideal for high-frequency switching and synchronous rectification applications. The device is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 540 Package Type: TO-220-3L Channel Type: N
