Single FETs, MOSFETs
60V N Channel Power MOSFET Siliup SP60N02AGTO Featuring Low RDSon and Fast Switching for Power Management
Product Overview The SP60N02AGTO is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ideal for power switching applications, DC-DC converters, and power management systems. It is supplied in a TOLL package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd
Power Switching MOSFET N Channel 100 Volt VBsemi Elec IRL540NPBF VB Featuring Trench Power Technology
Product OverviewThe IRL540NPBF-VB is a N-Channel 100-V (D-S) MOSFET featuring Trench Power MOSFET technology for low thermal resistance and high junction temperature capability. It is designed for various applications requiring efficient power switching.Product AttributesBrand: VBsemiCertifications: RoHS Compliant, Halogen-FreeTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitStatic CharacteristicsDrain-Source Breakdown VoltageV(BR)DSSVGS = 0 V, ID = 250
SP40N02BGNK 40V N Channel Power MOSFET Featuring Fast Switching and Low RDSon for Power Applications
Product Overview The SP40N02BGNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, PWM applications, and DC-DC converters. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP40N02BGNK Device Code: 40N02BG
Durable Siliup SP40N08TH 40V N Channel MOSFET designed for DC DC converters and load switching tasks
Product Overview The SP40N08TH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. Engineered for efficient power management, it features fast switching, low gate charge, and low RDS(on) at various gate drive voltages (8m at 10V and 11m at 4.5V). This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching. Product Attributes Brand: Siliup Semiconductor Technology
60V N Channel MOSFET Siliup 2N7002T with ESD Protection 2KV and Low On Resistance in SOT 523 Package
Product Overview The 2N7002T is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities in a surface mount package. It features ESD protection up to 2KV and is suitable for applications such as battery switches and DC/DC converters. This device offers a low on-resistance and is available in a SOT-523 package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: 2N7002T
VBsemi Elec AOD2210 VB Power MOSFET N Channel Trench type optimized for PWM and primary side switching
Product OverviewThe AOD2210-VB is a high-performance N-Channel Trench Power MOSFET designed for primary side switching applications. It features a 175 C junction temperature rating, optimized for PWM applications, and is 100% Rg tested. This MOSFET offers a low on-resistance and is compliant with RoHS Directive 2002/95/EC.Product AttributesBrand: VBsemiCertifications: RoHS Directive 2002/95/EC, Halogen-Free (JEDEC JS709A, IEC 61249-2-21)Technical SpecificationsParameterSymbol
Load Switch Application P Channel MOSFET VBsemi Elec VBI2658 Featuring 60 Volt Drain Source Voltage
Product OverviewThis P-Channel 60-V (D-S) MOSFET features Trench Power MOSFET technology and is 100% UIS tested. It is designed for load switch applications.Product AttributesBrand: VBsemiOrigin: TaiwanCertifications: RoHS compliantTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitP-Channel 60-V (D-S) MOSFETDrain-Source VoltageVDS-60VGate-Source VoltageVGS±20VContinuous Drain Current (TC = 25 C)ID-70AGate-Source Threshold VoltageVGS(th)VDS = VGS, ID = -
Dual P Channel MOSFET 20V 2KV ESD Protection Siliup SP2004KDTL for Battery Switch and DC DC Converter
Product Overview The SP2004KDTL is a 20V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount package, with ESD protection up to 2KV. This MOSFET is designed for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP2004KDTL Package: SOT-563 Circuit Diagram Marking: 04K ESD Protected: 2KV Technical Specificati
60V Dual P Channel MOSFET Siliup BSS84KDW with 130mA Continuous Drain Current SOT 363 Package
Product Overview The BSS84KDW is a 60V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability, ESD protection up to 2KV, and is available in a surface mount SOT-363 package. This MOSFET is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: B84K Package: SOT-363 Technical Specifications Parameter Symbol
SOT 23 3L Package N Channel MOSFET 100V Siliup SP010N110GT1 for Battery Switch and DC DC Converter
Product Overview The SP010N110GT1 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-23-3L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: N-Channel MOSFET Package Type: SOT-23-3L Technical Specifications Parameter Symbol Conditions Min. Typ. Max. Unit
60V N Channel MOSFET Siliup SP60N15HTQ with Fast Switching and Low Gate Charge in TO 220 3L Package
Product Overview The SP60N15HTQ is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET features fast switching, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy and comes in a TO-220-3L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP60N15HTQ Package: TO-220-3L Circuit Diagram Marking:
Complementary MOSFET 40V Device Siliup SP4013CNK Suitable for High Density Cell and Power Management
Product Overview The SP4013CNK is a 40V Complementary MOSFET designed for high-density cell applications, offering ultra-low RDS(on). This device is fully characterized for avalanche voltage and current, and features fast switching speeds. It is suitable for load switching, inverters, and power management applications. Product Attributes Brand: Shanghai Siliup Semiconductor Technology Co. Ltd. Product Code: SP4013CNK Package: PDFNWB5X6-8L Technical Specifications Parameter
20V Dual P Channel MOSFET Siliup SP2004KDTW Featuring 2KV ESD Protection for Battery Switches and DC DC Converters
Product Overview The SP2004KDTW is a 20V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount package and is ESD protected to 2KV. This MOSFET is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 04K Technical Specifications Parameter Symbol Conditions Min. Typ. Max. Unit Product Summary
Power management P channel MOSFET Siliup SP30P25NQ 30V PDFN2X2 6L package low on resistance device
Product Overview The SP30P25NQ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features low on-resistance and low input capacitance, making it suitable for power management functions and DC-DC converters. The device is available in a PDFN2X2-6L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 30P25 Package: PDFN2X2-6L Technical Specifications Parameter Symbol Conditions Min. Typ. Max. Unit Product Summary
Trench Technology N Channel MOSFET SL4822A Designed for High Frequency Point of Load Power Converters
Product OverviewThe SL4822A is an N-Channel MOSFET featuring advanced high cell density Trench technology, offering super low gate charge and excellent CdV/dt effect decline. It is designed for high frequency point-of-load synchronous buck converters, networking DC-DC power systems, and load switch applications. This device is also available as a Green Device.Product AttributesBrand: SLKORMicroModel: SL4822ATechnology: TrenchPackage: SOP-8Certifications: Green Device
Power Management P Channel MOSFET SL03P06A Featuring Ultra Low Rds on for High Density Cell and PWM
Product DescriptionThe SL03P06A is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low Rds(on). It features fully characterized avalanche voltage and current, along with an excellent package for good heat dissipation. This MOSFET is suitable for PWM applications, power management, and load switch functions.Product AttributesBrand: SLKormicroModel: SL03P06APackage: SOT-23Technical SpecificationsParameterSymbolConditionMinTypMaxUnitDrain-Source
30V N Channel MOSFET Siliup SP30N06GNK with Fast Switching and Tested Single Pulse Avalanche Energy
Product Overview The SP30N06GNK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications and DC-DC converters. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy, ensuring reliability. It is available in a PDFN5X6-8L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd.
Siliup SP40N04GNK 40V N Channel MOSFET Featuring Split Gate Trench Technology and Low RDS on for DC DC Converters
Product Overview The SP40N04GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low Gate Charge, and low RDS(on), utilizing advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for applications such as DC-DC converters, motor control, and portable equipment. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:
200V N Channel Planar MOSFET Siliup SP5N20TQ with Fast Switching and Low Gate Charge Characteristics
Product Overview The SP5N20TQ is a 200V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, it features fast switching speeds, low gate charge, and low Rdson. This MOSFET is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters and synchronous rectification. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP5N20TQ Channel Type: N-Channel Technology:
Planar MOSFET 200V N Channel Siliup SP18N20TQ with Fast Switching and High Current Capability
Product Overview The SP18N20TQ is a 200V N-Channel Planar MOSFET designed by Siliup Semiconductor Technology Co. Ltd. This MOSFET features fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching applications and synchronous rectification. It is particularly well-suited for DC-DC converters and has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 18N20
