Single FETs, MOSFETs

Product OverviewThe VBA3310 is a dual N-Channel 30-V (D-S) Trench Power MOSFET optimized for high-side synchronous rectifier operation. It features low on-resistance, high efficiency, and is 100% Rg and UIS tested, making it ideal for notebook CPU core applications as a high-side switch.Product AttributesBrand: VBsemiCertifications: Halogen-freePackage Type: SO-8Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitDrain-Source Breakdown VoltageVDSVGS = 0 V,

Product OverviewThe GSD07N65E is a 650V, 7A N-channel Multi-EPI Super-Junction Power MOSFET from XCH Semiconductor. Designed with advanced technology, it offers improved characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This MOSFET is suitable for applications requiring high voltage and efficient power handling.Product AttributesBrand: XCH SemiconductorModel: GSD07N65ETechnology: Multi-EPI Super

TPC8104-H-VB P-Channel 30-V (D-S) MOSFET The TPC8104-H-VB is a P-Channel Trench Power MOSFET designed for various electronic applications. It offers low on-resistance and high efficiency, making it suitable for power management solutions. This MOSFET is compliant with RoHS directives and is halogen-free. Product Attributes Brand: VBsemi Certifications: Halogen-free (IEC 61249-2-21), RoHS Directive 2002/95/EC compliant Technical Specifications Parameter Symbol Test Conditions

Product OverviewThe APG250N01 is a semiconductor product from UNI-SEMICONDUCTOR CO.,LTD. This datasheet provides technical specifications and package information for the APG250N01.Product AttributesBrand: UNI-SEMICONDUCTOR CO.,LTDCompany Name: Website: www.uni-semic.comContact Number: 0575-85087896Version: 1.1Copyright: / Release Date: 2021/08Address: 25454/5Email: htw@uni-semic.comRevision History: 2018/04/19, Version 1.0, First ReleaseLayout adjustmentTechnical Specificatio

Product OverviewThe SI4946BEY-T1-E3-VB is a Dual N-Channel Trench Power MOSFET designed for high-performance applications. It offers a 60 V drain-source voltage and a low on-resistance, making it suitable for various power switching and control circuits. Key features include 100% Rg and UIS testing, and operation at elevated temperatures up to 175 C.Product AttributesBrand: VBsemiOrigin: TaiwanCertifications: RoHS compliantTechnical SpecificationsPart NumberConfigurationVDS

Product OverviewThe SI2305/AO3401/SI2301B is a TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It offers efficient power management and is available in a SOT-23 package.Product AttributesBrand: tw-gmcPackage: SOT-23Technical SpecificationsSymbolParameterTest ConditionsMinTypMaxUnitAbsolute Maximum Ratings (Ta=25)VDSDrain-Source Voltage-20VVGSGate-Source Voltage10VIDContinuous Drain Current-2.3AISContinuous Source-Drain Current

Product Overview The WGF11N40SE is a 400V N-Channel MOSFET designed for applications requiring excellent switching characteristics and low intrinsic capacitances. It offers an extended safe operating area and an unrivalled gate charge of 28nC (Typ.). This MOSFET is 100% avalanche tested and is suitable for various power electronics applications. Product Attributes Brand: WildGoose Semiconductor Model: WGF11N40SE Package Type: TO-220F Channel Type: N-Channel Technical

Product OverviewThe X4N65DHE2 is a high-performance N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching capabilities, making it ideal for applications such as LED power supplies, cell phone chargers, and standby power systems.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Origin: ChinaModel: X4N65DHE2Package: TO-252-2LPackaging: Tape & ReelTechnical SpecificationsParameterSymbolValuesUn

Product OverviewThe AP40P100K is a high-performance N-channel MOSFET featuring advanced trench technology, low on-resistance, and low gate charge. It is designed for applications requiring efficient power management and control, such as battery management, motor control, and uninterruptible power supplies (UPS).Product AttributesBrand: ZHEJIANG UNIU-NE Technology CO.,LTDPackage: TO-252Technical SpecificationsParameterSymbolTest ConditionMinTypeMaxUnitABSOLUTE MAXIMUM

Product OverviewThe BRT30N180P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as Load Switch, PWM Application, and Power Management.Product AttributesBrand: XTX Technology Inc.Product Code: BRT30N180P2Origin: China (implied by company name and contact details)Package: PDFN5*6-8LMarking: T30N180Certifications: Not

IRF8736TRPBF-VB N-Channel 30-V (D-S) MOSFETThe IRF8736TRPBF-VB is a high-performance N-Channel Trench Power MOSFET optimized for high-side synchronous rectifier operation. It features low on-resistance and is suitable for demanding applications like notebook CPU core high-side switching.Product AttributesBrand: VBsemiCertifications: Halogen-freeTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitStatic CharacteristicsDrain-Source Breakdown VoltageVDSVGS = 0

Product OverviewThe SUD50P08-25L-E3-VB is a P-Channel Trench Power MOSFET designed for high-efficiency applications. It offers low on-resistance and robust performance, making it suitable for various power management solutions.Product AttributesBrand: VBsemiCertifications: RoHS COMPLIANTOrigin: TaiwanTechnical SpecificationsModelVDS (V)rDS(on) ()ID (A)Qg (Typ) (nC)PackageSUD50P08-25L-E3-VB-1000.017 at VGS = -10 V-50 (Package limited)55TO-252SUD50P08-25L-E3-VB-1000.021 at VGS

Product Overview The SSFL0956 is a 100V N-Channel MOSFET designed for high efficiency switched-mode power supplies and a wide range of other applications. It utilizes advanced MOSFET process technology to achieve high cell density and low on-resistance, resulting in improved efficiency and reliability. Key features include fast switching, low on-resistance with low gate charge, and excellent reverse body recovery. This device is ideal for applications requiring efficient

Product OverviewThe VBA1203M is a 1-Channel 200V N-Channel Trench Power MOSFET designed for primary side switching applications. It features a high junction temperature of 175C, optimized for PWM applications, and is 100% Rg tested. This MOSFET offers robust performance and reliability, compliant with RoHS Directive 2002/95/EC.Product AttributesBrand: VBsemiOrigin: TaiwanCertifications: RoHS Directive 2002/95/EC, Halogen-Free (JEDEC JS709A)Technical SpecificationsParameterSym

Product Overview The SP85N04AGHTO is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low gate charge, and low RDS(on), making it suitable for PWM applications, hard-switched, and high-frequency circuits, as well as power management. It is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP85N04AGHTO Package: TOLL Technical Specificati

Product OverviewThe SQD40031EL_GE3-VB is a P-Channel MOSFET designed for various electronic applications. It offers key features such as low on-state resistance and compliance with the RoHS Directive 2002/95/EC.Product AttributesBrand: VBsemiOrigin: TaiwanCertifications: RoHS Directive 2002/95/EC compliantTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitStatic CharacteristicsDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = - 250 A---30VGate Threshold

Wolfspeed EAB450M12XM3: 1200 V, 2.6 m Silicon Carbide Half-Bridge Module Product Overview The Wolfspeed EAB450M12XM3 is a 1200 V, 2.6 m Silicon Carbide (SiC) half-bridge module designed for high-power density applications. It features a high junction temperature operation of 175 C and a low inductance design of 6.7 nH, utilizing third-generation SiC MOSFET technology. Key benefits include a terminal layout for direct bus bar connection, enabling a simple, low inductance

Product Overview The SP2102CT3 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. It offers high power and current handling capabilities in a surface mount SOT-323 package. Key applications include battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co., Ltd. Product Code: SP2102CT3 Channel Type: N-Channel MOSFET Package: SOT-323 Technical Specifications Parameter Symbol Conditions Min. Typ. Max. Unit Product

Product Overview The SSFP4806 is a 40V N-Channel MOSFET utilizing advanced MOSFET process technology to achieve high cell density and low on-resistance. This design makes the device highly efficient and reliable, ideal for high-efficiency switched-mode power supplies and a wide range of other applications requiring fast switching and reverse body recovery. Key benefits include low on-resistance with low gate charge, contributing to overall system efficiency. Product

Product Overview The SP40N25TQ is a 250V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching and synchronous rectification, this MOSFET features fast switching speeds, low gate charge, and low Rdson. It is 100% tested for single pulse avalanche energy and is ideal for DC-DC converter applications. The device comes in a TO-220-3L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: