Single FETs, MOSFETs

Product OverviewThis Silicon N-Channel Enhanced VDMOSFET is manufactured using self-aligned planar technology, leading to reduced conduction losses, improved switching performance, and enhanced avalanche energy. It is suitable for various power switching circuits, enabling system miniaturization and higher efficiency. The device comes in a TO-251 package and complies with RoHS standards.Product AttributesBrand: XCH4N65MMaterial: Silicon N-Channel Power MOSFETPackage: TO

Product OverviewThe FQD50N06-VB is a N-Channel 60V MOSFET designed for high-performance applications. It features a Trench Power MOSFET structure, a high junction temperature rating of 175C, and low on-state resistance. This MOSFET is suitable for various power switching and control applications.Product AttributesBrand: VBsemiOrigin: TaiwanMaterial Categorization: RoHS Compliant, Halogen-FreeCertifications: RoHS compliant (Directive 2011/65/EU), Halogen-Free (JEDEC JS709A,

Product OverviewThe WSD70N06GDN33 is a high-performance N-Channel SGT MOSFET featuring extreme cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. This MOSFET is ideal for power management in industrial DC/DC converters and high-frequency switching applications.Product AttributesBrand: WinsokCertifications: RoHS

X2N030TLE2 N-CHANNEL MOSFET The X2N030TLE2 is an N-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching, making it suitable for applications such as synchronous rectification for AC/DC quick chargers, battery management, and Uninterruptible Power Supplies (UPS). Product Attributes Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd. Product Name: X2N030TLE2 Channel Type: N-CHANNEL Package: TO-252-2L Packaging:

Product OverviewThe FDS5670-NL-VB is a high-performance N-Channel Trench Power MOSFET designed for efficient "Low Side" synchronous rectifier operation. It offers optimized performance for applications like CCFL inverters, featuring low on-resistance and robust electrical characteristics. This device is halogen-free, adhering to IEC 61249-2-21 standards.Product AttributesBrand: VBsemiCertifications: Halogen-free (IEC 61249-2-21)Technical SpecificationsParameterSymbolTest

Product OverviewThe VBQA1102N is an N-Channel 100-V (D-S) Trench Power MOSFET designed for high-performance applications. It features a low thermal resistance package, a high junction temperature rating of 175 C, and is 100% Rg tested. This MOSFET is ideal for isolated DC/DC converters and other power management solutions requiring robust and efficient switching.Product AttributesBrand: VBsemiProduct Type: N-Channel MOSFETCompliance: RoHS CompliantPackage Type: DFN5X6Technica

Product Overview The SI4599DY-T1-GE3-VB is a 60-V N- and P-Channel Trench Power MOSFET designed for various applications. It features low on-resistance, high performance, and is 100% Rg and UIS tested. Available in a SO-8 package, it is also halogen-free. Product Attributes Brand: Vishay (VBsemi) Certifications: Halogen-free According to IEC 61249-2-21 Available Technical Specifications Parameter Symbol N-Channel (Typ.) P-Channel (Typ.) Unit Conditions Drain-Source Voltage

Product OverviewThe WTM11N65AF/AD is a 650V N-Channel Super-Junction MOSFET designed for high-efficiency power switching applications. It offers very low FOM (RDS(on) x Qg), extremely low switching loss, and excellent stability and uniformity. This MOSFET is 100% avalanche tested and features a built-in ESD diode, making it suitable for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), Power Factor Correction (PFC), TV power, and LED Lighting Power

Product OverviewThe BRP100N120P8 is an N-channel enhancement mode Power MOSFET from XTX Technology Inc. It features ultra-low RDS(ON) and low gate charge, making it suitable for applications such as motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC converters and power management systems. This lead-free component offers high performance with a drain-to-source voltage of 100V and a continuous drain current of 120A.Product

Product Overview The SSFN3964 is a 30V N-Channel MOSFET designed for high efficiency applications. It utilizes advanced MOSFET process technology and a high cell density design to achieve low on-resistance and low gate charge, making it ideal for switched-mode power supplies and other power conversion systems. Key benefits include fast switching and reverse body recovery, contributing to overall system efficiency and reliability. Product Attributes Brand: goodarksemi Model:

Product Overview The CAS175M12BM3 is a 1200 V, 175 A Silicon Carbide Half-Bridge Module designed for high-frequency operation with ultra-low losses. It features zero reverse recovery from diodes and zero turn-off tail current from MOSFETs, offering normally-off, fail-safe device operation. The module utilizes a copper baseplate and aluminum nitride insulator, and its industry-standard 62 mm footprint enables system retrofitting. Key applications include induction heating,

Product OverviewThe YJD212080NCTG1 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a high blocking voltage. Key features include a fast intrinsic diode with low recovery current and suitability for high-frequency operation. This product is halogen-free and RoHS compliant.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co.,

Product Overview The SSFL6912 is a 60V N-Channel MOSFET designed with advanced MOSFET process technology to achieve high cell density and low on-resistance. This device offers fast switching and reverse body recovery, making it ideal for high efficiency switched mode power supplies and a wide variety of other applications. Its low on-resistance combined with low gate charge ensures high efficiency and reliability. Product Attributes Brand: Goodarksemi Model: SSFL6912 Package:

Product OverviewThe IRLZ44NSPBF-VB is a high-performance N-Channel MOSFET designed for various electronic applications. It features a logic-level gate drive, fast switching capabilities, and a dynamic dV/dt rating, making it suitable for demanding circuit designs. This MOSFET is halogen-free and compliant with RoHS directives, ensuring environmental responsibility.Product AttributesBrand: VBsemiOrigin: TaiwanCertifications: RoHS Directive 2002/95/EC, Halogen-free According to

Product OverviewThe APG180N10K is a high-performance N-channel MOSFET designed for high-frequency switching applications. It offers a 100V breakdown voltage and a continuous drain current of 50A, with a low on-resistance of 15m (Typ.) at VGS = 10V and ID = 20A. Key advantages include extremely low switching loss, excellent stability and uniformity, and 100% UIS and VDS tested. It is compliant with RoHS and Halogen-Free standards.Product AttributesBrand: ZHEJIANG UNIU-NE

Product OverviewThe IRF7343TRPBF-VB is a 60-V N- and P-Channel Trench Power MOSFET designed for various applications including CCFL inverters. It features 100% Rg and UIS tested, and is halogen-free. This MOSFET offers low on-state resistance and efficient performance.Product AttributesBrand: VBsemiCertifications: Halogen-free According to IEC 61249-2-21 AvailableTechnical SpecificationsParameterN-ChannelP-ChannelUnitVDS (V)60-60VRDS(on) () at VGS = 10 V / -10 V0.0260.055RDS

Product Overview The MACOM CGH09120F is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for high efficiency, high gain, and wide bandwidth applications. It is ideal for amplifier applications in MC-GSM, WCDMA, and LTE systems. The transistor features UHF to 2.5 GHz operation, 21 dB gain, and -38 dBc ACLR at 20 W PAVE, with 35% efficiency at 20 W PAVE. It is supplied in a ceramic/metal flange package and supports a high degree of Digital Pre

Product Overview The Wolfspeed WAS310M17BM3 is a 1700 V, 310 A Silicon Carbide Half-Bridge Module designed for high-frequency, ultra-low loss operation. It features an industry-standard 62 mm footprint, enabling system retrofits, and offers high humidity operation (THB-80). Key benefits include increased system efficiency due to the low switching and conduction losses of SiC technology, zero reverse recovery from diodes, zero turn-off tail current from MOSFETs, and normally

Product OverviewThe 12N65F is an N-Channel Enhancement Mode Power MOSFET designed for power switch circuits in adaptors and chargers. It offers fast switching, low ON resistance, low gate charge, and is 100% avalanche energy tested. The device features a molded plastic case with UL 94V-0 flammability classification and is lead-free in compliance with EU RoHS 2011/65/EU. It is suitable for various applications requiring efficient power management.Product AttributesCase: Molded

Product OverviewThe XCH80N03 is a high cell density trench N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval, providing excellent CdV/dt effect decline.Product AttributesBrand: XCH (implied by product name)Certifications: RoHS, Green Device AvailableTechnical SpecificationsSymbolParameterC