Single FETs, MOSFETs

Product OverviewThe FDS9945-NL-VB is a Dual N-Channel MOSFET designed for high-performance applications. It features a trench power MOSFET structure, offering 100% Rg and UIS testing for reliability. This device is suitable for applications requiring efficient power switching with a breakdown voltage of 60V and a continuous drain current of 7A per leg.Product AttributesBrand: VBsemiCertifications: RoHS compliantTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max

Product OverviewThe BRT30N70P1 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features 30V drain-to-source voltage and 70A continuous drain current with low on-resistance (RDS(ON) < 6.0m @ VGS = 10V). Utilizing advanced trench technology, it offers excellent RDS(ON) and low gate charge, making it suitable for load switch, PWM applications, and power management scenarios. The device is lead-free.Product AttributesBrand: XTX Technology Inc.Origin:

Product OverviewThe LG50N10AP/T is an N-Channel Advanced Power MOSFET designed for efficient power switching applications. It features fast switching speeds, low ON resistance, and low gate charge, making it ideal for power switch circuits in adaptors and chargers. The MOSFET is available in TO-220C and TO-263C packages.Product AttributesBrand: LGChannel Type: N-ChannelTechnology: Advanced Power MOSFETCertifications: EU RoHS 2011/65/EU directive compliantMaterial: Molded

Product OverviewThe XR30J03D is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, contributing to efficient power conversion. This device is RoHS and Green Product compliant, with 100% EAS guaranteed and full functional reliability.Product AttributesBrand: XR (implied from product name)Certifications: RoHS, Green ProductFeatures: Fast Switching, Super Low Gate Charge

AP40N100K DATA SHEETThis document provides detailed information for the AP40N100K product from ZHEJIANG UNIU-NE Technology CO.,LTD. The product is designed for high-quality, stable, reliable, environmentally friendly, energy-saving, and efficient applications.Product AttributesBrand: UNI-SEMICOrigin: ZHEJIANG UNIU-NE Technology CO.,LTDCompany Name: Copyright: Technical SpecificationsPart NumberVds (V)Id (A)Rds(on) (m)Qg (nC)PackageVgs(th) (V)Vgs (V)Idm (A)Pd (W)Tj (

Product OverviewThe 2N7002KT is a Plastic-Encapsulate MOSFET in a SOT-523 package. It offers low on-resistance (RDS(ON)), low gate threshold voltage, low input capacitance, and ESD protection up to 2KV. This device is suitable for various applications requiring efficient switching and low power consumption.Product AttributesBrand: tw-gmc.comProduct Code: 2N7002KTPackage Type: SOT-523Marking: K72Technical SpecificationsParameterSymbolMin.Max.UnitConditionsDrain Source

Product OverviewThe UMW IPP015N04N is a 40V N-Channel MOSFET designed for high-performance switching applications. It features fast switching speeds, very low on-resistance (RDS(ON)), and an excellent gate charge x RDS(ON) product (FOM), making it ideal for Switched-Mode Power Supplies (SMPS) and DC/DC converters. Optimized technology ensures efficient operation in demanding power applications.Product AttributesBrand: UMWOrigin: UTD Semiconductor Co., LimitedCertifications:

Product OverviewThe 30P06-VB is a P-Channel 60V Trench Power MOSFET designed for load switching applications. It offers low on-resistance and is suitable for various electronic circuits requiring efficient power management.Product AttributesBrand: VBsemiMaterial Categorization: RoHS Compliant, Halogen-FreePackage: TO-252Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitStatic CharacteristicsDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = - 250 A- 60VGate

SIR422DP-T1-GE3-VB N-Channel MOSFET The SIR422DP-T1-GE3-VB is a high-performance N-Channel Trench Power MOSFET designed for demanding applications. It features low on-resistance and high current handling capabilities, making it suitable for core power delivery in notebook PCs and Voltage Regulator Modules (VRMs/POLs). Product Attributes Brand: VBsemi Origin: Taiwan Certifications: RoHS compliant Technical Specifications Parameter Symbol Test Conditions Min Typ. Max. Unit

Product OverviewThe X4N50DHE2 is an N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching, making it suitable for applications such as LED power supplies, cell phone chargers, and standby power.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Model: X4N50DHE2Package: TO-252-2LPackaging: Tape & ReelTechnical SpecificationsParameterSymbolMinTypMaxUnitNote/Test ConditionsAbsolute Maximum

Product OverviewThe IPD78CN10N G-VB is a N-Channel Trench Power MOSFET designed for primary side switching applications. It offers a 100 V Drain-Source voltage rating and is 100% UIS tested, ensuring reliability in demanding applications. Key advantages include its trench power MOSFET structure and robust performance characteristics.Product AttributesBrand: VBsemiModel: IPD78CN10N G-VBPackage: TO-252Technical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitDrain

WTM40N65AF/AMP/ATL 650V N-Channel Multi-EPI Super-Junction MOSFET This Power MOSFET is produced using WPMteks advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies. Product Attributes Brand: WPMtek Origin: Not

Product OverviewThe FH30150D is an N-Channel Trench Power MOSFET from SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD. It features advanced trench technology, providing excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management, offering high performance with a 30V drain-source voltage and 150A continuous drain current.Product AttributesBrand: XIN FEI HONG ELECTRONICS CO.,LTDModel: FH30150DOrigin:

Product OverviewThe SI9430DY-T1-E3-VB is a P-Channel 20-V (D-S) MOSFET designed for various portable device applications. It features Trench Power MOSFET technology, 100% Rg testing, and compliance with RoHS Directive 2002/95/EC. This device is suitable for use as a load switch, battery switch, and charger switch.Product AttributesBrand: Vishay (implied by datasheet format and common industry practice, though not explicitly stated as 'brand')Origin: Taiwan (implied by www

Product OverviewThe YJT300G10AQ is an N-Channel Enhancement Mode Field Effect Transistor designed for high-power applications. It features excellent heat dissipation, a high-density cell design for low RDS(ON), and meets UL 94 V-0 flammability rating. This product is AEC-Q101 qualified, making it suitable for automotive electronics. Key applications include high power inverter systems, uninterruptible power supplies, and LCDM appliances.Product AttributesBrand: Yangzhou

Product OverviewThe GSW77N65EF is a low-voltage N-channel Multi-EPI Super-Junction Power MOSFET from XCH Semiconductor. It features revolutionary high-voltage technology, offering superior RDS(on) in a TO-247 package, ultra-low gate charge, and excellent avalanche and dv/dt characteristics. This advanced MOSFET is designed for high-performance applications requiring fast switching times, low on-resistance, and robust avalanche capabilities.Product AttributesBrand: XCH

Product OverviewThe YJG60G10BQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd., featuring split gate trench MOSFET technology for low RDS(ON) and excellent heat dissipation. It is designed for high-frequency switching, synchronous rectification, and automotive systems (12V, 24V, and 48V). The device is 100% UIS and VDS tested, with a VDS of 100V and ID of 60A.Product AttributesBrand: Yangzhou Yangjie Electronic

Product OverviewThe X28N50DHA3 is an N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching, making it suitable for applications requiring efficient power management. This MOSFET is 100% avalanche tested for reliability.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Model: X28N50DHA3Package: TO-247-3LPackaging: TubeTechnical SpecificationsParameterSymbolValuesUnitNote/Test ConditionsAbsolu

Product OverviewThe SPW20N60S5FKSA1-VB is a N-Channel 600V Super Junction Power MOSFET designed for high-efficiency power supply applications. It features a low figure-of-merit (FOM) Ron x Qg, low input capacitance (Ciss), reduced switching and conduction losses, ultra low gate charge (Qg), and is avalanche energy rated (UIS). This MOSFET is ideal for server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC), and

Product OverviewThe GSA/GSD15N65E is a 650V, 15A Power MOSFET from XCH Semiconductor, featuring a Multi-EPI Super-Junction platform. This N-channel MOSFET offers advanced technology for fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics, making it suitable for various power applications.Product AttributesBrand: XCH SemiconductorSeries: GSA/GSD15N65EVoltage Rating: 650VCurrent Rating: 15ATechnology: Multi-EPI Super-JunctionChann