Single FETs, MOSFETs

Product OverviewThe AO4447A-VB is a P-Channel Trench Power MOSFET designed for load switching applications. It offers high performance with low on-resistance and features like 100% Rg and UIS testing, making it suitable for notebook adaptors. This product is Halogen-free and RoHS compliant.Product AttributesBrand: VBsemiCertifications: Halogen-free, RoHS CompliantTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitStaticDrain-Source Breakdown VoltageVDSVGS =

Product Overview The Wolfspeed CAB006A12GM3/CAB006A12GM3T is a 1200 V, 6 m Silicon Carbide Half-Bridge Module designed for high-frequency operation with ultra-low loss. It features zero turn-off tail current from the MOSFET, a normally-off, fail-safe device operation, and an Aluminum Nitride Ceramic Substrate. This module enables compact, lightweight systems with increased efficiency due to the low switching and conduction losses of SiC, leading to reduced thermal requirement

WSR20N10 N-Channel MOSFET The WSR20N10 is an N-Channel MOSFET utilizing advanced Trench MOSFET technology to achieve excellent RDS(ON) and low gate charge. This device is well-suited for battery protection and other switching applications, offering reliable and rugged performance. It is available in lead-free and green (RoHS compliant) options and has a Moisture Sensitivity Level of MSL1. Product Attributes Brand: Winsok Type: N-Channel MOSFET Technology: Advanced Trench

Product OverviewThe FDS3672-NL-VB is an N-Channel 100 V (D-S) MOSFET designed for primary side switching applications. It features extremely low Qgd for reduced switching losses, and is 100% Rg and Avalanche tested. This RoHS compliant device is halogen-free, making it suitable for various electronic designs requiring high efficiency and reliability.Product AttributesBrand: VBsemiCertifications: Halogen-free According to IEC 61249-2-21 Definition, Compliant to RoHS Directive

Product OverviewThe YJD18GP10AQ is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) and FOM, extremely low switching loss, and excellent stability and uniformity. This AEC-Q101 qualified transistor is designed for power management and portable equipment applications.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Part Number:

Product OverviewThe WSF35N20 is a high-performance SGT N-Channel MOSFET characterized by its extreme cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval.Product AttributesBrand: WinsokCertifications: RoHS Compliant, Green Devices AvailableTesting: 100% UIS + Rg TestedReliability: Reliable and RuggedTechnical

Product OverviewThe GSW/GSA25N65EF is a 650V, 25A N-channel Multi-EPI Super-Junction Power MOSFET from XCH Semiconductor. It features advanced technology for improved characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This series is designed for applications requiring high voltage and efficient power handling.Product AttributesBrand: XCH SemiconductorSeries: Multi-EPI Super-JunctionTechnical Specificati

Product OverviewThe YJG80GP06BQ is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing split gate trench MOSFET technology, it offers low RDS(on) and FOM with excellent stability and uniformity. This component is designed for power management, portable equipment, and 12/24V automotive systems. It meets Moisture Sensitivity Level 3 and has an epoxy that meets UL 94 V-0 flammability rating. A suffix "Q" indicates

Product OverviewThe YJD50N03A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers excellent heat dissipation with a high-density cell design for low RDS(ON). This transistor is suitable for high current load applications, load switching, hard switched and high frequency circuits, and uninterruptible power supply systems.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co., Ltd.Origin: ChinaCertificatio

Product OverviewThe YJG80G06B is a N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. It features Split Gate Trench MOSFET technology, an excellent package for heat dissipation, and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC Converters, power management functions, and industrial and motor drive applications.Product AttributesBrand: Yangzhou Yangjie Electronic Technology Co.

Product OverviewThe YJGD20G10B is a high-performance N-Channel and N-Channel Complementary MOSFET from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring a split gate trench MOSFET technology and a high-density cell design, it offers low RDS(ON) and high-speed switching capabilities. This MOSFET is suitable for various industrial applications, including DC-DC converters, power management functions, and industrial motor drives.Product AttributesBrand: Yangzhou Yangjie

Product OverviewThe NTMS10P02R2G-VB is a P-Channel 20-V (D-S) Trench Power MOSFET designed for portable devices. It offers low on-resistance and is 100% Rg tested, compliant with RoHS directives. Key applications include load switches, battery switches, and charger switches.Product AttributesBrand: VBsemiCertifications: Halogen-free According to IEC 61249-2-21 Definition, Compliant to RoHS Directive 2002/95/ECOrigin: TaiwanTechnical SpecificationsParameterSymbolTest

Product Overview The Wolfspeed CAB320M17XM3 is a 1700 V, 3.5 m Silicon Carbide Half-Bridge Module designed for high power density applications. It features a high junction temperature operation of up to 175 C and a low-inductance design of 6.7 nH. This module implements Wolfspeeds third-generation SiC MOSFET technology, incorporating a Silicon Nitride insulator and a copper baseplate. Its terminal layout facilitates direct bus bar connections, enabling simple, low-inductance

Product OverviewThe WSF12P04 is a high-performance P-Channel Trench MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed and approved for full functional reliability.Product AttributesBrand: WinsokCertifications: RoHS Compliant, Green Devices AvailableTesting: 100% UIS TestedTechnical SpecificationsParameterSymbolRatingUnitsCondi

Product Overview The Wolfspeed CAB008A12GM3/CAB008A12GM3T is a 1200 V, 8 m Silicon Carbide Half-Bridge Module designed for high-frequency operation with ultra-low losses. It features zero turn-off tail current from the MOSFET and a normally-off, fail-safe device operation. The module utilizes an Aluminum Nitride Ceramic Substrate and is available with or without pre-applied thermal interface material. Its system benefits include enabling compact, lightweight designs,

Wolfspeed C6D50065D1: 6th Generation 650 V, 50 A Silicon Carbide Schottky Diode Product Overview The Wolfspeed C6D50065D1 is a 6th Generation 650 V, 50 A Silicon Carbide (SiC) Schottky Barrier Diode. Leveraging SiC technology, this diode offers significant performance advantages over traditional silicon-based solutions, enabling higher efficiency standards, increased switching frequencies, and improved power densities. Its design features include low forward voltage (VF) drop

Product OverviewThe VB2658 is a P-Channel 60-V (D-S) MOSFET designed for high-voltage applications. It features an isolated package with 2.5 kVRMS high voltage isolation, a sink to lead creepage distance of 4.8 mm, and a high operating temperature of 175 C. This MOSFET offers a dynamic dV/dt rating, low thermal resistance, and is available in a lead (Pb)-free option. It is suitable for various applications requiring robust high-voltage switching capabilities.Product

Product OverviewThe YJD25N10A is a N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation with a high-density cell design for low RDS(ON). This product is Moisture Sensitivity Level 1 and meets UL 94 V-0 flammability rating. It is Halogen Free and suitable for applications such as DC-DC Converters, Power management functions, and Backlighting.Product AttributesBrand: Yangzhou Yangjie Electronic

Product OverviewThe WSD80N10GDN56 is a high-performance N-Channel MOSFET featuring an extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.Product AttributesBrand: WinsokCertifications: RoHS Compliant, Green Devices AvailableTesting: 100% UIS Tested, 100% EAS guaranteedTechnical

Product OverviewThe YJL3404B is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers a high-density cell design for low RDS(ON), high-speed switching, and is designed for applications such as battery protection, load switching, and power management. The device is moisture sensitivity level 1 and meets UL 94 V-0 flammability rating, with a halogen-free design.Product AttributesBrand: Yangzhou Yangjie Electronic Technology