Single FETs, MOSFETs

Product OverviewThe X2P8N060GLV8 is a high-performance N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features extremely low on-resistance (RDS(on)) and excellent low Ciss, making it ideal for demanding applications. This MOSFET is designed for synchronous rectification in AC/DC quick chargers, battery management systems, and Uninterruptible Power Supplies (UPS).Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Origin: ChinaModel:

Product OverviewThe SDM4953-VB is a Dual P-Channel 30-V (D-S) MOSFET featuring Trench Power MOSFET technology and 100% UIS tested. It is designed for load switch applications and offers advantages such as halogen-free compliance.Product AttributesBrand: VBsemiCertifications: Halogen-free, RoHS CompliantTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = - 250 A- 30VGate-Source Threshold VoltageVGS(th)VDS = VGS

Product OverviewThe GSW/GSA20N65E is a 650V, 20A Power MOSFET from XCH Semiconductor, featuring a Multi-EPI Super-Junction platform. This N-channel MOSFET is designed for applications requiring fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. It is available in TO-220F and TO-247 packages.Product AttributesBrand: XCH SemiconductorProduct Series: Multi-EPI Super-JunctionPackage Types: TO-220F, TO-247Technical SpecificationsSy

Product OverviewThe X345P15THI8 is a P-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers high power and current handling capability, low gate charge, and is ideal for high-frequency switching and synchronous rectification applications, including DC/DC converters. This lead-free product is designed for efficient power management.Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Origin: XiamenMaterial: MOSFETCertifications: Lead free

Wuxi Unigroup Super-Junction Power MOSFETsThe TPP50R400C series of Super-Junction Power MOSFETs from Wuxi Unigroup Microelectronics Company offers very low FOM (RDS(on)Qg) and 100% avalanche tested performance. These RoHS compliant devices are ideal for Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), and Power Factor Correction (PFC) applications.Product AttributesBrand: Wuxi Unigroup Microelectronics CompanyCertifications: RoHS compliantTechnical

Product Overview The MACOM CGHV40180F is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications. Operating from a 50-volt rail, it offers high efficiency, high gain, and wide bandwidth capabilities, making it ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange package and is suitable for applications in military communications, public

Product OverviewThe YJD80G06CQ is a N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features low RDS(on) & FOM, extremely low switching loss, excellent stability and uniformity, and fast switching with soft recovery. This transistor is suitable for power switching applications, hard switched and high frequency circuits, uninterruptible power supply, DC-DC converters, and 12V and 24V automotive systems. The "Q" suffix

Product OverviewThe XCH4N80N is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This technology enhances efficiency by reducing conduction loss, improving switching performance, and increasing avalanche energy. Designed for miniaturization and higher efficiency in power switching circuits, this transistor is available in a RoHS-compliant TO-251 package.Product AttributesBrand: XCHMaterial: Silicon N-Channel Power MOSFETCertifications:

Product OverviewThe 2N70 is a high voltage N-Channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high avalanche ruggedness. This MOSFET is ideal for use in power supplies, PWM motor controls, high-efficiency DC to DC converters, and bridge circuits.Product AttributesBrand: 2N70Type: N-Channel Power MOSFETOrigin: Not specifiedMaterial: Not specifiedCol

Product OverviewThe XCHS1005 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key features include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.Product AttributesCertifications: RoHS, Green ProductTechnical SpecificationsSymbolParame

Product OverviewThe SI4850DY-T1-E3-VB is a 60-V N-Channel Trench Power MOSFET optimized for low-side synchronous rectifier operation. It offers high efficiency and is suitable for applications like CCFL inverters. This device is halogen-free and has undergone 100% Rg and UIS testing.Product AttributesBrand: VBsemiCertifications: Halogen-free (According to IEC 61249-2-21 Definition)Material: Trench Power MOSFETOrigin: TaiwanTechnical SpecificationsParameterSymbolTest

Product OverviewThe WNM2091A is a single N-Channel enhancement mode Power MOSFET from Will Semiconductor Ltd. Utilizing advanced trench technology and a super high-density cell design, it offers excellent ON resistance with low gate charge. This device is ideal for DC-DC conversion, power switch, and charging circuits, providing a small DFN2X2-6L package. The WNM2091A is Pb-free and Halogen-free.Product AttributesBrand: Will Semiconductor Ltd.Product Code: WNM2091APackage:

Product OverviewThe SI1308EDL-VB is a N-Channel Trench Power MOSFET designed for various applications including portable devices and load switching for motors, relays, and solenoids. It offers low on-resistance and is tested for Rg, complying with RoHS directives.Product AttributesBrand: VBsemiCertifications: Halogen-free (IEC 61249-2-21 Definition), Compliant to RoHS Directive 2002/95/ECMaterial: Trench Power MOSFETOrigin: Taiwan VBsemi Electronics Co., Ltd.Technical

Product Overview The MACOM CGHV14500 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for high efficiency, high gain, and wide bandwidth capabilities. It is ideally suited for DC - 1.8 GHz L-Band radar amplifier applications, with suitability for band-specific applications ranging from 800 through 1600 MHz. The device offers 500 W typical output power and 16 dB power gain, with a typical drain efficiency of 68%. It features internal input pre

Product OverviewThe WSK40200 is an N-Channel MOSFET utilizing advanced SGT MOSFET technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics, making it highly suitable for synchronous-rectification applications. Its design emphasizes ruggedness and stability, ensuring reliable performance in demanding environments.Product AttributesBrand: WinsokTechnology: SGT MOSFETType: N-ChannelTechnical SpecificationsParameterConditionsMin

Product OverviewThe BSS84 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, contributing to efficient operation. This device meets RoHS and Green Product requirements with full function reliability approval.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: RoHS, Green ProductTechnical SpecificationsSymbolPara

Product OverviewThe XR15N10S is a high-performance N-channel MOSFET featuring extreme high cell density, offering excellent RDS(on) and gate charge for synchronous buck converter applications. It boasts super low gate charge, an advanced high cell density Trench technology, and excellent Cdv/dt effect decline. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved.Product AttributesBrand: Not specifiedOrigin:

Product OverviewThe XCH3401A is a high cell density trenched P-channel MOSFET designed for efficient performance in small power switching and load switch applications. It offers excellent RDS(ON) and efficiency, meeting RoHS and Green Product requirements with full reliability approval.Product AttributesBrand: XCHCertifications: RoHS, Green ProductTechnology: Advanced high cell density Trench technologyFeatures: Super Low Gate Charge, Excellent CdV/dt effect declineTechnical

Product OverviewThe X2P2N040GLV8 is a high-performance N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching capabilities, making it 100% avalanche tested. This MOSFET is designed for applications such as synchronous rectification for AC/DC quick chargers, battery management systems, and uninterruptible power supplies (UPS).Product AttributesBrand: Xiamen XYDFAB Integrated Circuit Co., Ltd.Product Name:

Product Overview The Wolfspeed C3M0350120J is a 3rd generation Silicon Carbide (SiC) MOSFET featuring a low impedance package with a dedicated driver source pin and 7mm of creepage distance. This technology offers high blocking voltage with low on-resistance and high-speed switching with low capacitances. Its fast intrinsic diode boasts low reverse recovery (Qrr). Designed for applications such as renewable energy, high voltage DC/DC converters, switch mode power supplies,