Single FETs, MOSFETs
Power MOSFET Siliup SP80N04HTQ 80V N Channel 145A Low RDSon TO2203L Package for DC DC Power Systems
Product Overview The SP80N04HTQ is an 80V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). This device is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. The MOSFET is housed in a TO-220-3L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP80N04HTQ Package: TO
SP010N03AGHTD 100V N Channel Power MOSFET Featuring Split Gate Trench Technology and Fast Switching
Product Overview The SP010N03AGHTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, it offers fast switching speeds, low gate charge, and low Rdson. This device is ideal for power switching applications, DC-DC converters, and power management systems. It is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications. Product Attributes Brand: Siliup
100V N Channel MOSFET Siliup SP010N08GTD with Fast Switching Low Rdson and Avalanche Energy Tested
Product Overview The SP010N08GTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, enabled by advanced split gate trench technology. This MOSFET is 100% single pulse avalanche energy tested and is suitable for power switching applications, battery management, and uninterruptible power supplies. The device is available in a TO-263 package. Product Attributes Brand: Siliup Semiconductor
Low On Resistance and Fast Switching 30V MOSFET Siliup SP30N08DNJ for Power Management Applications
Product Overview The SP30N08DNJ is a 30V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This MOSFET features fast switching speed, low On-Resistance, and is 100% tested for single pulse avalanche energy. It is designed for applications such as DC-DC Converters and Power Management, utilizing the PDFN3X3-8L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: SP30N08DNJ Package: PDFN3X3-8L Material: Silicon (implied by
N Channel MOSFET Siliup SP20N22T2 with 20 Volt Drain Source Voltage and SOT 23 Surface Mount Package Design
Product Overview The SP20N22T2 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this device is suitable for applications such as battery switches and DC/DC converters. It features a surface mount package for convenient integration. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line: SP20N22T2 Technology: N-Channel MOSFET Package: SOT-23 Technical Specifications Parameter Symbol
SOT23 Package P Channel MOSFET Siliup SP3401T2 Offering Performance for DC DC Converter Applications
Product Overview The SP3401T2 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capabilities in a surface mount SOT-23 package. This MOSFET is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Package: SOT-23 Technical Specifications Parameter Symbol Conditions Min. Typ. Max. Unit Product Summary Breakdown Voltage (Drain
Compact 20V MOSFET Siliup SP2038CNQ for power management and DC DC converter applications PDFN2x2 6L
Product Overview The SP2038CNQ is a 20V complimentary MOSFET designed for power management functions and DC-DC converters. It offers low on-resistance and low input capacitance, ensuring efficient operation. This device is available in a PDFN2x2-6L package. Product Attributes Brand: Shanghai Siliup Semiconductor Technology Co. Ltd. Model: SP2038CNQ Package: PDFN2x2-6L Device Code: 2038C Technical Specifications Parameter Symbol N-Channel (Q1) Test Condition N-Channel (Q1) Typ
power switching solution with low Rdson and fast switching speeds Siliup SP30P03P8 30V P Channel MOSFET device
Product Overview The SP30P03P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching speeds, low gate charge, and low Rdson. This device is suitable for hard-switched and high-frequency circuits, including uninterruptible power supplies. It has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP30P03P8 Package:
Dual N Channel MOSFET Siliup SP30N06DP8 30 Volt Device for High Frequency Circuits and Power Switching
Product Overview The SP30N06DP8 is a 30V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is available in a SOP-8L package and is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line
P Channel MOSFET Siliup SP2101CT3 20V Device with High Current Capability in Compact SOT 323 Package
Product Overview The SP2101CT3 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-323 package. This MOSFET is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: P-Channel MOSFET Package: SOT-323 Device Code: TS1 Technical Specifications Parameter Symbol Conditions Min. Typ. Max.
P Channel MOSFET SL2309 Featuring 60V Drain Source Voltage and 1.6A Drain Current for Power Management
Product OverviewThe SL2309 is a P-Channel Power MOSFET designed for load switch and PWM applications. It features a VDS of -60V and an ID of -1.6A, with a high-density cell design for ultra-low Rds(on) (
60V N Channel Power MOSFET Siliup SP60N02BGTD featuring fast switching and low gate charge for power switching circuits
Product Overview The SP60N02BGTD is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), leveraging advanced split gate trench technology. This MOSFET is designed for power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. It has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor
Durable Siliup SP2026KCTL 20V Complementary MOSFET Designed for Power Switching and DC DC Converter
SP2026KCTL 20V Complementary MOSFET The SP2026KCTL is a 20V Complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. This surface-mount device features ESD protection up to 2KV, making it suitable for applications such as battery switches and DC/DC converters. Its complementary nature allows for versatile circuit designs. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:
Compact P Channel MOSFET Siliup SP20P35T1 20V Device in SOT 23 3L Package for DC DC Converter Designs
Product Overview The SP20P35T1 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-23-3L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: P-Channel MOSFET Package: SOT-23-3L Device Code: 20P35 Technical Specifications Parameter Symbol Conditions Min. Typ.
Surface Mount 16V P Channel MOSFET Siliup SP2333T2 Designed for High Power Battery Switch and DC DC Converter
Product Overview The SP2333T2 is a 16V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It is suitable for surface mount applications and is ideal for use as a battery switch and in DC/DC converters. This MOSFET offers a low RDS(on) at various gate-source voltages, ensuring efficient operation. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP2333T2 Channel Type: P-Channel
60V Dual N Channel MOSFET Siliup SP60N23DNK with Single Pulse Avalanche Energy Testing and Halogen Free Package
Product Overview The SP60N23DNK is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, a surface mount package, and is ROHS Compliant & Halogen-Free. The device undergoes 100% Single Pulse avalanche energy testing. It is suitable for applications such as DC-DC Converters and Motor Control. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP60N23DNK Device Code: 60N23D Package: PDFN5X6-8L
Power MOSFET Siliup SP60N03GTD 60V N Channel TO 263 Package Tested for Single Pulse Avalanche Energy
Product Overview The SP60N03GTD is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on), leveraging advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for hard switched and high-frequency circuits, as well as uninterruptible power supply systems. The device is available in a TO-263
20V complementary MOSFET Siliup SP2011ACNK suitable for dc dc converters and motor control applications
Product Overview The SP2011ACNK is a 20V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It features TrenchFET technology for excellent RDS(on) and low gate charge, enabling fast switching speeds. This MOSFET is suitable for applications such as motor control, DC-DC converters, and power management. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line: SP2011ACNK Type: Complementary MOSFET Package: PDFN5X6-8L Device Code:
Siliup SP40N01ACGTO N Channel 40V MOSFET Featuring Split Gate Trench Technology for Power Conversion
SP40N01ACGTO 40V N-Channel Power MOSFET Product Overview The SP40N01ACGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This device is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard switched and high frequency circuits, and power management. It is available in a TOLL package. Product
Low On Resistance 40V Dual N Channel MOSFET Siliup SP40N11DNJ Suitable for Power Management and DC DC Converter Applications
Product Overview The SP40N11DNJ is a 40V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance, and is 100% tested for single pulse avalanche energy. This MOSFET is designed for applications such as DC-DC Converters and Power Management, and is housed in a PDFN3X3-8L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP40N11DNJ Device Code: 40N11D Package: PDFN3X3-8L
