Single FETs, MOSFETs
Power MOSFET ARK micro DMD6014E 600V N Channel device featuring fast switching speed and enhanced ESD protection
Product OverviewThe ARK Microelectronics DMD6014E is a 600V N-Channel Depletion-Mode Power MOSFET featuring ESD improved capability, a normally-on characteristic, and proprietary advanced planar technology. It offers a rugged polysilicon gate cell structure and fast switching speed, making it ...
power MOSFET ASDsemi ASDM100N34KQ-R 100V N-Channel featuring advanced trench technology for operation
Product Overview The ASDM100N34KQ is a 100V N-Channel MOSFET from Ascend Semiconductor Co., Ltd. It features Advanced Trench Technology, offering excellent RDS(ON) and low gate charge for efficient performance. This lead-free product is designed for applications such as load switching and PWM ...
Durable ARK micro FTD03P20G 200V P Channel MOSFET with secondary breakdown free and RoHS compliance
Product Overview The FTD03P20G is a 200V P-Channel Enhancement-Mode MOSFET from ARK Microelectronics Co., Ltd. It features a rugged polysilicon gate cell structure, integrated gate-to-source resistor and Zener diode, low on-resistance, low threshold voltage, low input capacitance, and fast switching ...
Depletion mode mosfet ARK micro DMZ0622E designed for quick charge qc40 and type c pd charger circuits
Product OverviewThe DMZ0622E/DMX0622E series of depletion mode MOSFETs from ARK Microelectronics utilize proprietary ultrahigh threshold voltage technology. Designed for applications like Quick Charge (QC4.0) and Type C PD chargers, these MOSFETs can function as stable current or voltage sources. ...
depletion mode mosfet ARK micro DMX0615E suitable for quick charge QC4 0 and type C PD charger circuits
Product OverviewThe DMZ0615E/DMX0615E series of depletion-mode MOSFETs from ARK Microelectronics utilize proprietary ultrahigh threshold voltage technology. These devices are designed for applications requiring stable voltage regulation, such as Quick Charge (QC4.0) and Type C PD chargers. They can ...
600V N Channel Depletion Mode Power MOSFET ARK micro DMZ11C55EA suitable for start up circuits and power supply
Product OverviewThe DMZ11C55EA/DMX11C55EA are 600V N-Channel Depletion-Mode Power MOSFETs from ARK Microelectronics Co., Ltd. These devices feature a depletion mode (normally-on) operation, are free from secondary breakdown, and utilize a proprietary advanced planar technology with a rugged ...
BL BL4N90 P N channel Enhanced MOSFET designed for high frequency switching and power management
Product Overview The BL4N90 is a silicon N-channel Enhanced Power MOSFET designed for high-frequency switching mode power supplies (SMPS), high-speed switching, and general-purpose applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performanc...
1200V N Channel Silicon Carbide Power MOSFET ANHI ADW120N080G2 Featuring Low RDS ON and Switching Performance
1200V N-Channel Silicon Carbide Power MOSFETs Product Overview This series of 1200V N-Channel Silicon Carbide (SiC) Power MOSFETs offers high performance for demanding power electronics applications. Key features include a low drain-source on-resistance (RDS(ON) = 80m typ.) and easy gate control, ...
High density cell application MOSFET ASDsemi ASDM60N30KQ R with fully characterized avalanche voltage
Product Overview The Ascend Semiconductor ASDM60N30KQ is a 60V N-Channel MOSFET designed for high-density cell applications, offering ultra-low Rdson and excellent thermal dissipation. It features fully characterized avalanche voltage and current for robust performance, along with high EAS and ...
power management solution featuring ARK micro DMX5530E depletion mode power MOSFET with SOT89 package
DMX5530E Depletion-Mode Power MOSFETThe DMX5530E is a depletion-mode (normally on) power MOSFET from ARK Microelectronics, utilizing proprietary advanced planar technology with a rugged polysilicon gate cell structure. It is designed for applications requiring transient protection, start-up circuits...
Power MOSFET ARK micro DMX4022E depletion mode transistor with low leakage current and small package
Product OverviewThe DMX4022E/DMS4022E are depletion-mode (normally-on) power MOSFETs from ARK Microelectronics, utilizing proprietary advanced planar technology. They offer a small package, low leakage current, and are suitable for various applications including transient protection, start-up ...
Low EMI N Channel Power MOSFET Bestirpower BMD60N650UC1 with Ultra Fast Body Diode and Rugged Design
Bestirpower BMx60N650UC1 N-Channel Power MOSFET Product Overview The Bestirpower BMx60N650UC1 is an N-Channel Power MOSFET utilizing advanced super junction technology to achieve very low on-resistance and gate charge. This design enhances efficiency through optimized charge coupling, offering ...
Power MOSFET BL BLM2012E N Channel Enhancement Mode Device with Excellent RDS ON and Low Gate Voltage
Product Overview The BLM2010E is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is suitable for load switch and PWM applications, and it is ESD ...
Power Switching P Channel MOSFET BL BLM12P03 R with Low Gate Charge and Enhanced Thermal Performance
Product Overview The BLM10P03 is a P-Channel Power MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It is designed for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as battery protection. Its ...
Dual N Channel MOSFET 30V ASDsemi ASDM3010S R for Power Electronics and Inverter System Integration
Product Overview The Ascend Semiconductor ASDM3010S is a 30V Dual N-Channel MOSFET designed for power management applications, particularly in inverter systems and for synchronous rectification. It features dual N-Channel, 5V logic level control, enhancement mode operation, and fast switching ...
Low RDS ON 60V N Channel MOSFET BL BLM04N06 P Suitable for High Frequency and Hard Switched Circuits
Product Overview The Belling BLM04N06 is a 60V N-Channel Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptib...
650V 11A Super Junction Power MOSFET Bestirpower BMF65N380E2 with Low On Resistance and Gate Charge
BMF65N380E2 Super Junction Power MOSFET Product Overview The BMF65N380E2 is a 650V, 11A, 380m Super Junction Power MOSFET from Bestirpower, leveraging advanced super junction technology to achieve very low on-resistance and gate charge. Optimized charge coupling technology enables high efficiency, ...
P Channel Enhancement Mode Power MOSFET BL BLM3407 with Low Gate Charge and Trench Technology
Product Overview The Belling BLM3407 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is well-suited for applications such as load switching ...
ASDSemi ASDM40DN20E R 40V Dual N Channel Power MOSFET with Low R DS ON and Excellent Heat Dissipation
Product Overview The Ascend Semiconductor ASDM40DN20E is a 40V Dual N-Channel Power MOSFET designed with Trench Power LV MOSFET technology. It features an excellent package for heat dissipation and a high-density cell design for low RDS(ON). This MOSFET is suitable for high current load applications...
Ultra high threshold voltage ARK micro DMZ1015E MOSFET designed for power management and load protection
Product OverviewThe DMZ1015E/DMX1015E is a novel depletion-mode Power MOSFET from ARK Microelectronics, featuring an ultra-high threshold voltage. This device leverages proprietary advanced planar and ultrahigh Vth technologies to provide stable power to loads using its sub-threshold characteristics...
