Single FETs, MOSFETs

quality 20V Complementary MOSFET with High Density Cell Design and Low On Resistance Siliup SP2024KCTL Device factory

20V Complementary MOSFET with High Density Cell Design and Low On Resistance Siliup SP2024KCTL Device

Product Overview The SP2024KCTL is a 20V N- and P-Channel complementary MOSFET designed with trench technology for superior performance. It features a supper high-density cell design, resulting in extremely low Rds(on) and exceptional ON resistance with maximum DC current capability. This ESD protected device is suitable for driver applications including relays, solenoids, lamps, and hammers, as well as power supply converters and load/power switching for portable devices.

quality Power MOSFET SLkor SLP240C03D featuring complementary N Channel P Channel with low RDS ON and surface mount package factory

Power MOSFET SLkor SLP240C03D featuring complementary N Channel P Channel with low RDS ON and surface mount package

Product OverviewThe SLP240C03D is a complementary N-Channel and P-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for applications such as level-shifted high-side switches and various other power management tasks. Key features include high power and current handling capability, a lead-free acquisition, and a surface-mount package.Product AttributesBrand: SLKORMicroCertifications: Lead-free product

quality Low Resistance P Channel MOSFET Siliup SP2006KT7J with High ESD Protection and Surface Mount Package factory

Low Resistance P Channel MOSFET Siliup SP2006KT7J with High ESD Protection and Surface Mount Package

Product Overview The SP2006KT7J is a 20V P-Channel MOSFET designed for surface mount applications. It features low RDS(on) and operates at low logic-level gate drive, making it suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. The device is ESD protected with an HBM rating of 2KV. Product Attributes Brand: Shanghai Siliup Semiconductor Technology Co. Ltd. Product Code: SP2006KT7J Channel Type: P

quality Advanced Trench Technology P Channel MOSFET Slkor SL50P06D with Low On Resistance and Thermal Stability factory

Advanced Trench Technology P Channel MOSFET Slkor SL50P06D with Low On Resistance and Thermal Stability

Product OverviewThis P-Channel MOSFET utilizes advanced trench technology and design to achieve excellent RDS(on) with low gate charge, making it suitable for a wide range of applications. It features a high cell density trench technology for ultra-low RDS(ON) and an excellent package design for effective heat dissipation. A green device option is also available.Product AttributesBrand: SLKORMicroModel: SL50P06DPackage: TO-252Certifications: Green device availableTechnical

quality Siliup SP40P08TH P Channel MOSFET 40V Designed for Load Switching and Low On Resistance Performance factory

Siliup SP40P08TH P Channel MOSFET 40V Designed for Load Switching and Low On Resistance Performance

Product Overview The SP40P08TH is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device is designed for fast switching, featuring low gate charge and low RDS(on). It is 100% tested for single pulse avalanche energy. Key applications include DC-DC converters and load switching. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 40P08 Package: TO-252 Technical Specifications Product Summary V(BR)DSS RDS(on)TYP ID -40V 8.9m

quality Siliup SP77MF65TF 650V MOSFET Featuring Low RDSon and High Frequency Switching for PWM Applications factory

Siliup SP77MF65TF 650V MOSFET Featuring Low RDSon and High Frequency Switching for PWM Applications

Product Overview The SP77MF65TF is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency applications, it features fast switching characteristics, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard-switched and high-frequency circuits, and power management systems. It is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code:

quality N Channel MOSFET Siliup 2SK3018T2 60V Low RDSon SOT23 Package Suitable for Relay and Solenoid Driving factory

N Channel MOSFET Siliup 2SK3018T2 60V Low RDSon SOT23 Package Suitable for Relay and Solenoid Driving

Product Overview The 2SK3018T2 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features a high-density cell design for extremely low RDS(on) and a rugged, reliable construction. This MOSFET is designed for direct logic-level interface with TTL/CMOS and is suitable for driving relays, solenoids, lamps, hammers, displays, memories, and transistors. It is also ideal for battery-operated systems and solid-state relays. Product Attributes Brand: Siliup

quality High Voltage 900V N Channel MOSFET Siliup SP12N90TG with Fast Switching and Low Gate Charge Features factory

High Voltage 900V N Channel MOSFET Siliup SP12N90TG with Fast Switching and Low Gate Charge Features

Product Overview The SP12N90TG is a 900V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching and synchronous rectification, this MOSFET features fast switching speeds, low gate charge, and low RDS(on). It is ideal for DC-DC converter applications and is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP12N90TG Technology: N-Channel Planar

quality High Frequency Switching MOSFET Siliup SP10N90TG 900V N Channel Planar Device in TO 220F Package factory

High Frequency Switching MOSFET Siliup SP10N90TG 900V N Channel Planar Device in TO 220F Package

Product Overview The SP10N90TG is a 900V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET features fast switching speeds, low gate charge, and low Rdson. It is 100% tested for single pulse avalanche energy, making it ideal for DC-DC converters and synchronous rectification. The device is housed in a TO-220F package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product

quality High Current P Channel MOSFET Slkor AOD409 Offering Fully Characterized Avalanche Voltage and Current factory

High Current P Channel MOSFET Slkor AOD409 Offering Fully Characterized Avalanche Voltage and Current

AOD409 -60V/-30A P-Channel MOSFETThe AOD409 is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low RDS(ON). It features fully characterized avalanche voltage and current, and an excellent package for efficient heat dissipation. This MOSFET is suitable for PWM applications, power management, and load switch functionalities.Product AttributesBrand: slkormicroModel: AOD409Technical SpecificationsParameterConditionMinTypMaxUnitStatic Electrical

quality Siliup SP60N13TH N Channel MOSFET 60V Featuring Low Gate Charge and Fast Switching in TO 252 Package factory

Siliup SP60N13TH N Channel MOSFET 60V Featuring Low Gate Charge and Fast Switching in TO 252 Package

Product Overview The SP60N13TH is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and load switching. It comes in a TO-252 package. Product Attributes Brand: Siliup Technology: Siliup Semiconductor Technology Co. Ltd. Model Code: SP60N13TH Device Code: 60N13 Technical

quality SP30N03NJ 30V N Channel MOSFET Designed for Hard Switched and High Frequency Power Applications factory

SP30N03NJ 30V N Channel MOSFET Designed for Hard Switched and High Frequency Power Applications

Product Overview The SP30N03NJ is a 30V N-Channel MOSFET designed for high-performance power switching applications. It features an ultra-low RDS(ON) due to its high-density cell design, offering excellent stability and uniformity with high EAS. This MOSFET is ideal for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems, thanks to its efficient heat dissipation capabilities. Product Attributes Brand: Shanghai Siliup Semiconductor

quality Siliup SP60N13GDNJ N Channel 60V MOSFET with PDFN3X3 8L Package and Single Pulse Avalanche Energy Test factory

Siliup SP60N13GDNJ N Channel 60V MOSFET with PDFN3X3 8L Package and Single Pulse Avalanche Energy Test

Product Overview The SP60N13GDNJ is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., engineered with advanced Split Gate Trench Technology for fast switching speeds and high performance. Designed for surface mounting, this MOSFET is ideal for DC-DC converters and motor control applications. It features 100% single pulse avalanche energy testing, ensuring reliability in demanding environments. Product Attributes Brand: Siliup Semiconductor Technology

quality High power N Channel MOSFET Siliup SP40N13T1 40V 7A low on resistance in compact SOT 23 3L package factory

High power N Channel MOSFET Siliup SP40N13T1 40V 7A low on resistance in compact SOT 23 3L package

Product Overview The SP40N13T1 is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability, making it suitable for applications such as battery switches and DC/DC converters. The device comes in a surface mount SOT-23-3L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: SP40N13T1 Package: SOT-23-3L Technical Specifications Parameter Symbol Conditions Min. Typ. Max. Unit

quality Low On Resistance N Channel MOSFET 30 Volt Siliup SP30N15NJ Designed for Power Management Applications factory

Low On Resistance N Channel MOSFET 30 Volt Siliup SP30N15NJ Designed for Power Management Applications

Product Overview The SP30N15NJ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low on-resistance (15m typ. at 10V and 20m typ. at 4.5V), and is 100% tested for single pulse avalanche energy. This MOSFET is suitable for applications such as DC-DC converters and power management. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: N-Channel MOSFET Device Code: 30N15 Package: PDFN3X3-8L

quality High Speed Switching 120V N Channel MOSFET Siliup SP012N03BGHTQ Suitable for Power Management Systems factory

High Speed Switching 120V N Channel MOSFET Siliup SP012N03BGHTQ Suitable for Power Management Systems

Product Overview The SP012N03BGHTQ is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-speed power switching applications, this MOSFET features fast switching, low gate charge, and low Rdson. Its low reverse transfer capacitances and 100% single pulse avalanche energy test make it suitable for DC-DC converters and power management systems. The device comes in a TO-220-3L package. Product Attributes Brand: Siliup Semiconductor

quality Complementary MOSFET Siliup SP1012ACP8 100V SOP8L Package Lead Free Single Pulse Avalanche Tested factory

Complementary MOSFET Siliup SP1012ACP8 100V SOP8L Package Lead Free Single Pulse Avalanche Tested

Product Overview The SP1012ACP8 is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. This lead-free product is available in a surface mount SOP-8L package and undergoes 100% single pulse avalanche energy testing. It is ideal for applications such as battery protection, load switching, and power management. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type:

quality 60V N Channel Power MOSFET Siliup SP60N01BGHTD with Low Gate Charge and Fast Switching TO263 Package factory

60V N Channel Power MOSFET Siliup SP60N01BGHTD with Low Gate Charge and Fast Switching TO263 Package

Product Overview The SP60N01BGHTD is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as chargers, battery management, and power switching. The device is available in a TO-263 package. Product Attributes Brand: Siliup Semiconductor Technology

quality Siliup SP6026CTM Complementary MOSFET 60V Drain Source Voltage Lead Free Device for Power Management factory

Siliup SP6026CTM Complementary MOSFET 60V Drain Source Voltage Lead Free Device for Power Management

Product Overview The SP6026CTM is a 60V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. This lead-free product is available in a surface mount TO-252-4L package and has undergone 100% Single Pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type:

quality 250V N Channel Planar MOSFET Siliup SP80N25TF with High Continuous Drain Current and Low Gate Charge factory

250V N Channel Planar MOSFET Siliup SP80N25TF with High Continuous Drain Current and Low Gate Charge

Product Overview The SP80N25TF is a 250V N-Channel Planar MOSFET designed for power switching applications. It features fast switching, low gate charge, and low RDS(on), making it suitable for DC-DC converters and power management systems. This MOSFET is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP80N25TF Technology: N-Channel Planar MOSFET Package: TO-247-3L Technical Specifications

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