Single FETs, MOSFETs

Product Overview The SP20N28T2 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capabilities in a surface mount SOT-23 package. This MOSFET is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: N-Channel MOSFET Package: SOT-23 Device Code: 20N28 Technical Specifications Parameter Symbol Conditions Min. Typ. Max

Product Overview The SP010N07AGTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This device is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supplies. The product is available in a TO-252 package. Product Attributes Brand: Siliup Semiconduc

Product Overview The SP010N15GP8 is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supplies. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line: Power

Product Overview The SP010N10HTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET features fast switching, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy. The product is available in a TO-220-3L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP010N10HTQ Package Type: TO

Product Overview The SG2M023120LJ is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. Featuring a fast intrinsic diode with low reverse recovery charge (Qrr) and temperature-independent turn-off switching losses, this device contributes to reduced cooling efforts, improved efficiency, and increased power density. It is

Product Overview The SP30P06P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for hard-switched and high-frequency circuits, including Uninterruptible Power Supply (UPS) systems. It is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP30P06P8 Technology

Product Overview The SP6038CP8 is a 60V Complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead-free, surface mount SOP-8L package and has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:

Product Overview The SP2036CP8 is a 20V complimentary MOSFET designed by Shanghai Siliup Semiconductor Technology Co. Ltd. This device offers low on-resistance, low input capacitance, and fast switching speeds, making it suitable for applications such as motor control, power management functions, and DC-DC converters. It also features low input/output leakage and is available in an SOP-8L package. Product Attributes Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.

Product Overview The SP40N01LGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management systems. Product Attributes Brand:

Product Overview The SP2333BT1 is a 16V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This surface-mount device offers high power and current handling capabilities, making it suitable for applications such as battery switches and DC/DC converters. It features a low RDS(on) of 23m at -4.5V and 31m at -2.5V, with a continuous drain current rating of -4A. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Package: SOT-23-3L Device Code: SP2333BT1

Product Overview The SP010N03AGHTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It comes in a TO-220-3L package. Product Attributes Brand: Siliup Semiconductor Technology Co.

Product Overview The SP60N08HTH is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching, low gate charge, and a low RDS(on) of 8m at 10V. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line: SP60N08HTH Technology: N

Product Overview The SP20N11KNQ is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. It features low on-resistance (11m at 4.5V, 20m at 2.5V) and low input capacitance, making it suitable for power management functions and DC-DC converters. This device is ESD protected up to 2KV and is available in a PDFN22-6L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: N-Channel MOSFET Device Code: 20N11K Package: PDFN22-6L

Product Overview The SP2024KCTL is a 20V N- and P-Channel complementary MOSFET designed with trench technology for superior performance. It features a supper high-density cell design, resulting in extremely low Rds(on) and exceptional ON resistance with maximum DC current capability. This ESD protected device is suitable for driver applications including relays, solenoids, lamps, and hammers, as well as power supply converters and load/power switching for portable devices.

Product Overview The SP2006KT7J is a 20V P-Channel MOSFET designed for surface mount applications. It features low RDS(on) and operates at low logic-level gate drive, making it suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. The device is ESD protected with an HBM rating of 2KV. Product Attributes Brand: Shanghai Siliup Semiconductor Technology Co. Ltd. Product Code: SP2006KT7J Channel Type: P

Product Overview The SP40P08TH is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device is designed for fast switching, featuring low gate charge and low RDS(on). It is 100% tested for single pulse avalanche energy. Key applications include DC-DC converters and load switching. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 40P08 Package: TO-252 Technical Specifications Product Summary V(BR)DSS RDS(on)TYP ID -40V 8.9m

Product Overview The SP77MF65TF is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency applications, it features fast switching characteristics, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard-switched and high-frequency circuits, and power management systems. It is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code:

Product Overview The 2SK3018T2 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features a high-density cell design for extremely low RDS(on) and a rugged, reliable construction. This MOSFET is designed for direct logic-level interface with TTL/CMOS and is suitable for driving relays, solenoids, lamps, hammers, displays, memories, and transistors. It is also ideal for battery-operated systems and solid-state relays. Product Attributes Brand: Siliup

Product Overview The SP12N90TG is a 900V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching and synchronous rectification, this MOSFET features fast switching speeds, low gate charge, and low RDS(on). It is ideal for DC-DC converter applications and is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP12N90TG Technology: N-Channel Planar

Product Overview The SP10N90TG is a 900V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET features fast switching speeds, low gate charge, and low Rdson. It is 100% tested for single pulse avalanche energy, making it ideal for DC-DC converters and synchronous rectification. The device is housed in a TO-220F package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product