Single Bipolar Transistors
PNP Transistor JUXING MMBTA42 1D SOT23 Small Outline Plastic Package High Voltage 300V Collector Current
Product OverviewThe MMBTA42 is a PNP transistor designed for high voltage applications. It offers high stability and reliability, with a maximum power dissipation of 350mW. It is complementary to the MMBTA92.Product AttributesMarking: 1DPackage: SOT-23 Small Outline Plastic PackageEpoxy UL Flammability Rating: 94V-0Mounting Position: AnyTechnical SpecificationsParametersSymbolValueUnitTest ConditionMinMaxCollector-Base VoltageVCBO300VCollector-Emitter VoltageVCEO300VEmitter
NPN transistor JUXING BCX56SQ-16 designed for amplification and switching in electronic AF driver circuits
Product OverviewThis NPN transistor is designed for AF driver and output stages, offering high collector current and low collector-emitter saturation voltage. It is suitable for various electronic applications requiring efficient amplification and switching.Product AttributesBrand: BCX56SQPackage: SOT-89Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolValueUnitsNotesCollector Base VoltageVCBO10
PNP Transistor Model JTD JTDBC857BW SOT323 Package Perfect for Switching and Audio Frequency Amplifier
Product OverviewThe BC856BW, BC857BW, and BC858BW are PNP transistors ideally suited for automatic insertion. They are designed for switching and AF amplifier applications.Product AttributesBrand: SHENZHEN JTD ELECTRONICS CO.,LTDOrigin: ShenzhenMaterial: Plastic-Encapsulated TransistorsPackage Type: SOT-323Technical SpecificationsModelParameterValueUnitConditionsBC856BWCollector-Base Voltage (VCBO)-80V-65VIC= -10mA, IB=0Collector-Emitter Voltage (VCEO)-65VCollector Current
PNP Bipolar Junction Transistor JTD JTDSS8550W Suitable for High Collector Current Electronic Circuits
Product OverviewThe SS8550W is a PNP bipolar junction transistor (BJT) designed for high collector current applications. It serves as a complementary component to the SS8050W transistor. This device is suitable for various electronic circuits requiring a robust PNP transistor with good current handling capabilities.Product AttributesBrand: JTDOrigin: SHENZHEN JTD ELECTRONICS CO.,LTDPackage Type: SOT-323Material: Plastic-Encapsulate TransistorsTechnical SpecificationsParameter
Versatile NPN transistor JUXING MMBTA05 with 300mW power dissipation and UL 94V0 rated SOT23 package
Product OverviewThe MMBTA05 is an NPN transistor designed as a driver transistor. It offers high stability and reliability with a maximum power dissipation of 300mW. Suitable for various mounting positions, it comes in a SOT-23 small outline plastic package.Product AttributesBrand: MMBTA05Package: SOT-23Epoxy UL Flammability Rating: 94V-0Mounting Position: AnyOrigin: (Not specified)Material: Plastic (implied by package type)Color: (Not specified)Certifications: UL 94V
NPN transistor JTD JTDSS8050 featuring maximum emitter base voltage 5 volts and low cut off current
SS8050 TRANSISTOR (NPN) The SS8050 is an NPN transistor, complementary to the SS8550. It is designed for general-purpose applications. Product Attributes Marking: Y1 Package: SOT-23 Manufacturer: SHENZHEN JTD ELECTRONICS CO.,LTD Website: www.szjtdsemi.com Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base
40V Collector Emitter Voltage NPN Transistor for Switching Applications JingYang MMBT3904X SOT23 Package
Product OverviewThe MMBT3904X is an NPN switching transistor featuring epitaxial planar die construction. It offers a collector current capability of 200mA and a collector-emitter voltage of 40V. A complementary PNP type (MMBT3906) is available. This transistor is suitable for general switching and amplification applications and is supplied in a SOT23 package with MSL 3 rating.Product AttributesBrand: JY Electronics (implied by website)Origin: China (implied by website
Small Signal NPN Transistor JKSEMI MMBT5551 SOT23 Package Suitable for General Purpose Applications
Product OverviewThe MMBT5551 is an NPN transistor in a SOT-23 plastic-encapsulate package. It offers a power dissipation of 300mW, high stability, and high reliability. This transistor is complementary to the MMBT5401 and is suitable for general-purpose applications requiring a small outline plastic package.Product AttributesBrand: jksemiPackage: SOT-23 Plastic-EncapsulateMarking: G1Certifications: UL Epoxy UL: 94V-0Mounting Position: AnyTechnical SpecificationsParameterSymbo
Medium power PNP transistor JingYang MMBT5401 suitable for amplification switching applications
Product OverviewThe MMBT5401 is a PNP transistor designed as a complementary part to the MMBT5551. It is ideal for medium power amplification and switching applications.Product AttributesBrand: JY Electronics (implied from URL)Origin: China (implied from URL)Technical SpecificationsParameterSymbolTest conditionsMinTypMaxUnitCollector-Base VoltageVCBO-160VCollector-Emitter VoltageVCEO-150VEmitter-Base VoltageVEBO-5VCollector CurrentIC-0.6ACollector Power DissipationPCTa=250
silicon epitaxial planar transistor JKSEMI MMBT3904 NPN type with operation in general applications
Product OverviewSilicon Epitaxial Planar Transistor (NPN) in SOT-23 package. Features high collector current, complementary to MMBT3906, and excellent HFE linearity. Suitable for general purpose applications.Product AttributesBrand: jksemiType: MMBT3904Marking: 1AMOrigin: Not specifiedMaterial: SiliconColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionMinMaxUnitCollector-base breakdown voltageV(BR)CBOIC=10uA, IE=060VCollector
NPN switching transistor JingYang MMBT3904FX with epitaxial planar die construction and 200 milliamp collector current
Product OverviewThe MMBT3904FX is an NPN switching transistor featuring epitaxial planar die construction. It offers a collector current capability of 200mA and a collector-emitter voltage of 40V. This device is suitable for general switching and amplification applications and is available in a SOT-523 package. A complementary PNP type, MMBT3906, is also available.Product AttributesBrand: JY Electronics (implied by website)Origin: China (implied by website)Certifications: Pb
TO92 Package NPN Transistor JingYang 2N3904X Suitable for Switching and Amplifier Electronic Circuits
Product OverviewNPN Silicon Epitaxial Planar Transistor designed for switching and amplifier applications. Complementary PNP types include 2N3905 and 2N3906. Custom pin configurations are available upon request.Product AttributesBrand: JY ElectronicsPackage: TO-92 PlasticOrigin: China (implied by URL)Technical SpecificationsParameterSymbol2N3903X Min.2N3903X Max.2N3904X Min.2N3904X Max.UnitAbsolute Maximum RatingsCollector Base VoltageVCBO60VCollector Emitter VoltageVCEO40VEm
High collector current transistor JingYang S8550 silicon epitaxial planar for electronic applications
Product OverviewThe S8550 is a silicon epitaxial planar transistor designed for high collector current applications. It offers excellent HFE linearity and is complementary to the S8050 transistor. This device is suitable for various electronic circuits requiring a high collector current capability.Product AttributesBrand: JY Electronics (implied by website)Origin: China (implied by website)Material: Silicon Epitaxial PlanarColor: Not specifiedCertifications: Pb Lead
Electronic component JingYang MMBT5551 NPN transistor for medium power amplification and switching
MMBT5551 NPN TransistorThe MMBT5551 is an NPN transistor designed as a complementary part to the MMBT5401. It is ideal for medium power amplification and switching applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitBreakdown VoltageV(BR)CBOIC=100A, IE=0180VV(BR)CEOIC=1mA, IB=0160VV(BR)EBOIE=10A, IC=06VCut-off
PNP Silicon Epitaxial Planar Transistor JKSEMI MMBT2907A SOT23 Package Complementary NPN Type MMBT2222A
Product OverviewThe MMBT2907A is a PNP silicon epitaxial planar transistor featuring complementary NPN type availability (MMBT2222A). It is constructed with epitaxial planar die and comes in a SOT-23 package, marked with '2F'.Product AttributesBrand: KELMOrigin: ChinaModel: MMBT2907AMark: 2FPackage: SOT-23Complementary NPN Type: MMBT2222AWebsite: http://www.jksemi.comDate: 2021-10-21Version: cTechnical SpecificationsParameterSymbolTest ConditionsMINTYPMAXUnitAbsolute Maximum
SOT23 Package Silicon Epitaxial Planar Transistor Featuring JingYang SS8050 Model with Tape and Reel
Product OverviewSilicon Epitaxial Planar Transistor in SOT23 package. Available in Tape and Reel packaging.Product AttributesPkg type: SOT23Packaging: Tape and reelTape Type: Embossed Carrier TapeTape Leader and Trailer: YesTechnical SpecificationsParameterSymbolTest conditionsMINTYPMAXUNITRankSS805025VLHJSS8550Dimensions are in millimeterABCdEFP0PP1W3.152.771.221.501.753.504.004.002.008.00Tape Leader and Trailer: 502 Empty Pockets, 702 Empty Pockets2406141117_JingYang-SS8050
NPN Transistor JingYang MMBT2222AX Designed For Medium Power Amplifier Featuring Ultra Small Package
Product OverviewThe MMBT2222AX is an NPN general purpose amplifier featuring epitaxial planar die construction and an ultra-small surface mount package. It is designed for use as a medium power amplifier. A complementary PNP type, the MMBT2907A, is also available.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsType No.MarkingPackage CodeVCBO (V)VCEO (V)VEBO (V)IC (A)PC
transistor Jilin Sino Microelectronics 3DD4242DM 126 for power amplification and high frequency switching
Product OverviewThe 3DD4242D is a high-performance transistor designed for various power applications. It features high breakdown voltage, high current capability, and high switching speed, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This RoHS-compliant product offers high reliability and is available in multiple package types.Product AttributesBrand: Jilin Sino-microelect
High Reliability NPN Power Transistor Jilin Sino-Microelectronics 3DD13007K-220 with RoHS Compliance
Product OverviewThe 3DD13007K is a high voltage, fast-switching NPN power transistor designed for various power applications including energy-saving lamps, electronic ballasts, high-frequency switching power supplies, and general power amplification. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, while being a RoHS compliant product.Product AttributesBrand: Jilin Sino-microelectronics Co., Ltd.Model: 3DD13007KMarking:
Jilin Sino Microelectronics 3DD4244DM high voltage NPN transistor for in power amplifier and ballast circuits
Product OverviewThe 3DD4244D is a high voltage, fast-switching NPN power transistor designed for various power electronics applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for energy-saving lamps, electronic ballasts, high-frequency switching power supplies, high-frequency power transformers, and general power amplifier circuits. This product is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectro
