Single FETs, MOSFETs
Power Management Solution Siliup SP010N02BGHTO 100V N Channel MOSFET with Split Gate Trench Technology
Product Overview The SP010N02BGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching, low gate charge, and low Rdson, making it ideal for PWM applications, hard switched, and high-frequency circuits, as well as power management solutions. It is tested for 100% single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd.
Fast Switching 60V P Channel MOSFET Siliup SP60P60TH Featuring Low Gate Charge and RDSon
Product Overview The SP60P60TH is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device is designed for fast switching applications and features low gate charge and low RDS(on). It is 100% tested for single pulse avalanche energy. Key applications include DC-DC converters and load switching. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: SP60P60TH Package: TO-252 Technical Specifications Parameter Symbol Conditions
100V N Channel Power MOSFET Siliup SP010N15GTH with Low Gate Charge and Fast Switching TO 252 Package
Product Overview The SP010N15GTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, battery management, and uninterruptible power supplies. Key electrical characteristics include a Drain-Source Breakdown Voltage of 100V and a typical RDS(on) of 15m at 10V and 18m at 4.5V. The device is packaged in a TO-252 package. Product Attributes
SP40N01BHTQ 40V N Channel MOSFET Featuring Fast Switching and Low Gate Charge for Power Supply Designs
Product Overview The SP40N01BHTQ is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management systems, this MOSFET features fast switching, low gate charge, and low Rdson. It is tested for 100% single pulse avalanche energy, ensuring reliability in demanding applications. The device is supplied in a TO-220-3L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd.
N Channel MOSFET 60V Siliup SP6003T1 for Battery Switch and DC DC Converter Surface Mount Solutions
Product Overview The SP6003T1 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It is suitable for surface mount applications and is ideal for use as a battery switch and in DC/DC converters. The device features a SOT-23-3L package and offers robust performance characteristics. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line: SP6003T1 Technology: N-Channel MOSFET
150V N Channel MOSFET Siliup SP015N06GHTF Featuring Split Gate Trench Technology and Low Gate Charge
Product Overview The SP015N06GHTF is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP015N06GH
40V P Channel MOSFET Siliup SP40P08NJ with Typical On Resistance of 8.6 Milliohm at Negative 10 Volts
Product Overview The SP40P08NJ is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for efficiency, it features fast switching speeds and low on-resistance, with typical values of 8.6m at -10V and 13m at -4.5V. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and power management systems. It is supplied in a compact PDFN3X3-8L package. Product Attributes Brand:
Siliup SP60P60T1 p channel mosfet featuring trench technology for low r dson and power switching circuits
Product Overview The SP60P60T1 is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Featuring advanced trench technology, it offers low gate charge and low RDS(on). This device is designed for power switching applications, including PWM applications and DC-DC converters. It is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line:
900V N Channel Planar MOSFET Siliup SP6N90TQ Fast Switching Low Gate Charge Ideal for DC DC Converters
Product Overview The SP6N90TQ is a 900V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-frequency switching applications. It features fast switching speeds, low gate charge, and low Rdson, making it ideal for DC-DC converters and synchronous rectification. The device has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: N-Channel Planar MOSFET Device
20V Dual N Channel MOSFET Siliup SP8205DS8 High Current 5A Surface Mount Package for Power Switching
Product Overview The SP8205DS8 is a 20V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount package. This MOSFET is designed for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP8205DS8 Device Code: 8205 Technical Specifications Parameter Symbol Conditions Min. Typ. Max. Unit Product Summary V(BR)DSS 20
40V P Channel MOSFET Siliup SP40P04TG with Low Gate Charge and High Reliability in TO220F Package
Product Overview The SP40P04TG is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications. The device comes in a TO-220F package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product
100V P Channel MOSFET Siliup SP010P70GNJ with Split Gate Trench Technology and Avalanche Energy Test
Product Overview The SP010P70GNJ is a 100V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance, and advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and power management. It comes in a PDFN3x3-8L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP010P70GNJ
power management device Siliup SP30N02BNJ 30V N Channel MOSFET with fast switching and low on resistance
Product Overview The SP30N02BNJ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds, low on-resistance (2.5m typ. at 10V VGS), and a continuous drain current of 80A. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and power management systems. It comes in a compact PDFN3X3-8L package. Product Attributes Brand:
85V N Channel Power MOSFET Siliup SP85N05AGHTD Featuring Low RDS on and High Avalanche Energy Reliability
Product Overview The SP85N05AGHTD is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed with advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for power switching applications, DC-DC converters, and power management systems. It features 100% single pulse avalanche energy testing for enhanced reliability. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd.
60V N Channel Power MOSFET Siliup SP60N03GHNK featuring low gate charge and in PDFN5X6 8L package
Product Overview The SP60N03GHNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for hard switched and high frequency circuits, as well as uninterruptible power supplies. It is available in a PDFN5X6-8L package.
Power Conversion MOSFET Siliup SP05N100TC 1000V N Channel Planar with Low RDS on and Fast Switching
Product Overview The SP05N100TC is a 1000V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET offers fast switching speeds, low gate charge, and a low RDS(on) of 40 at 10V. It is ideal for DC/DC converters and synchronous rectification, providing efficient power conversion in demanding environments. The device comes in a SOT-223 package. Product Attributes Brand: Siliup Semiconductor Technology
Power Switching MOSFET Siliup SP70N07HTQ 70V N Channel with Low Gate Charge and High Current Rating
Product Overview The SP70N07HTQ is a 70V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET features fast switching, low gate charge, and low RDS(on). It offers a continuous drain current of 90A at 25 and is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: 70N07H Marking: 70N07H Package: TO
60V Dual N Channel MOSFET Siliup SP60N1K5KDTW for Battery Switch and DC DC Converter Electronics
Product Overview The SP60N1K5KDTW is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device offers ESD protection up to 2KV. Its key applications include battery switches and DC/DC converters, providing reliable performance in demanding electronic circuits. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP60N1K5KDTW Package: SOT-363 Circuit Diagram:
High commutation ruggedness 900V super junction mosfet Siliup SP05H90TC optimized for pc power and inverter circuits
Product Overview The SP05H90TC is a 900V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It features low on-resistance, fast switching speed, and an ultra-fast body diode, leading to extremely low losses due to a very low FOM (Rdson*Qg and Eoss). This MOSFET offers very high commutation ruggedness and is suitable for applications such as DC-AC inverters, PC power, telecom/server, and solar inverters. Product Attributes Brand: Siliup Semiconductor
Power Switching MOSFET Siliup SP60N12GTH 60V N Channel with Low Gate Charge and Avalanche Energy Test
Product Overview The SP60N12GTH is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for hard switched and high frequency circuits, as well as uninterruptible power supply systems. The product is available in a TO-252
