Single FETs, MOSFETs
Shenzhen ruichips Semicon RU6888R N Channel MOSFET with Full Avalanche Rating and Low On Resistance
Product OverviewThe RU6888 is an N-Channel Advanced Power MOSFET designed for high-performance switching applications. It features ultra-low on-resistance, exceptional dv/dt capability, and fast switching with full avalanche rating. This MOSFET is 100% avalanche tested and operates at temperatures up to 175C, making it suitable for demanding power systems.Product AttributesBrand: Ruichips SemiconductorModel: RU6888Material: Lead Free and Green AvailableCertifications: Not
Shenzhen ruichips Semicon RU30120S N Channel MOSFET designed for power management and DC DC converters
Product OverviewThe RU30120S is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor, designed for high-efficiency applications. It features a Super High Dense Cell Design, Ultra Low On-Resistance, and is 100% Avalanche Tested. This device is ideal for DC-DC converters and other power management applications requiring robust performance and reliability. Lead Free and Green Devices are available, complying with RoHS standards.Product AttributesBrand: Ruichips
Power Switching MOSFET 150V N Channel with Low RDSon and Fast Switching Siliup SP015N06GHTG in TO 220F Package
Product Overview The SP015N06GHTG is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It is supplied in a TO-220F package. Product Attributes Brand: Siliup Semiconductor Technology
RU8590S R N Channel Power MOSFET by Shenzhen ruichips Semicon suitable for demanding power switching
RU8590S N-Channel Advanced Power MOSFET The RU8590S is an N-Channel Advanced Power MOSFET designed for high-speed power switching applications. It offers ultra-low on-resistance, fast switching characteristics, and is fully avalanche rated, making it suitable for demanding applications. This device operates at an extended temperature range of 175C and is available in Lead Free and Green Devices (RoHS Compliant) options. Product Attributes Brand: Ruichips Semiconductor Co.,
Siliup SP80N120CTK Silicon Carbide MOSFET Suitable for Photovoltaic Inverters and Switch Mode Power Supplies
Product Overview The SP80N120CTK is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-speed switching applications, it offers a low on-resistance (RDS(on)TYP of 13m@18V) and high blocking voltage. Its characteristics, including easy paralleling and simple driving, make it suitable for demanding applications such as power factor correction modules, switch mode power supplies, photovoltaic inverters, UPS power supplies, and
40V N Channel Power MOSFET Siliup SP40N01ABGTO with Split Gate Trench Technology and Fast Switching
Product Overview The SP40N01ABGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard-switched, and high-frequency circuits, as well as power management systems. It features 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device
N Channel MOSFET 120V Siliup SP012N02AGHTO with Low Reverse Transfer Capacitance and Fast Switching
Product Overview The SP012N02AGHTO is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-speed power switching applications, it features fast switching, low gate charge, and low RDS(on). Its low reverse transfer capacitances and 100% single pulse avalanche energy testing make it suitable for DC-DC converters and power management systems. The device is supplied in a TOLL package. Product Attributes Brand: Siliup Semiconductor
Power MOSFET Siliup SP85N04BHTQ 85V N Channel Device with Fast Switching and Low Gate Charge Features
Product Overview The SP85N04BHTQ is an 85V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management systems, this MOSFET features fast switching, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications. The device comes in a TO-220-3L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd.
Power Switching MOSFET Siliup SP010N15GTQ 100V N-Channel Device with Low Rdson and TO2203L Package
Product Overview The SP010N15GTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, enabled by advanced split gate trench technology. This device is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supplies. The MOSFET is packaged in a TO-220-3L configuration. Product Attributes Brand: Siliup
Low RDSon 100V N-Channel MOSFET Siliup SP2N10T2 Suitable for Battery Switches and DC DC Converters
Product Overview The SP2N10T2 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high power and current handling capability and is designed for surface mount applications. Key applications include battery switches and DC/DC converters. The device offers a low Drain-Source On-Resistance (RDS(on)) of 210m at 10V and 230m at 4.5V, with a continuous drain current (ID) of 2A. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd.
SP010N04AGHTD 100V N Channel MOSFET Featuring Low Gate Charge and TO 263 Package for Power Switching
Product Overview The SP010N04AGHTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. The device is packaged in a TO-263 package. Product Attributes Brand: Siliup Semiconductor
Power Management Solutions Featuring Siliup SP30P06NJ 30V P Channel MOSFET with Fast Switching Speed
Product Overview The SP30P06NJ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This MOSFET features fast switching speed, low On-Resistance, and 100% Single Pulse avalanche energy testing. It is designed for applications such as DC-DC Converters and Power Management, utilizing the PDFN3X3-8L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP30P06NJ Package: PDFN3X3-8L Device Code: 30P06 Technical Specifications
N Channel Power MOSFET SP85N02AGHTD 85V 260A TO 263 Package Suitable for Power Switching Applications
Product Overview The SP85N02AGHTD is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It is available in a TO-263 package. Product Attributes Brand: Siliup Semiconductor Technology Co
Low RDSon N Channel MOSFET Siliup SP40N12P8 Designed for Power Switching and Hard Switched Circuits
Product Overview The SP40N12P8 is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), with typical RDS(on) values of 12m at 10V and 16m at 4.5V. This device is designed for power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. It is 100% tested for single-pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor
P Channel MOSFET Siliup SP2231ND 20V Drain Source Voltage Designed for Surface Mount Battery Switch
Product Overview The SP2231ND is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount MOSFET is suitable for applications such as battery switches and DC/DC converters. It offers a robust performance with key electrical characteristics optimized for efficient operation. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: P-Channel MOSFET Package Type: PDFN1212-3L
30V N Channel MOSFET Siliup SP30N03NK PDFN5X6 8L Package ROHS Compliant Halogen Free Semiconductor
Product Overview The SP30N03NK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching speeds, a surface mount PDFN5X6-8L package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for DC-DC converters and motor control applications. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP30N03NK
switching MOSFET Siliup SP20N08TH 20V N Channel with low gate charge and avalanche energy testing
Product Overview The SP20N08TH is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-frequency switching and synchronous rectification applications. It offers fast switching speeds, low gate charge, and low RDS(on) at various gate voltages (8m @ 4.5V, 12m @ 2.5V). This MOSFET is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters. It is supplied in a TO-252 package. Product Attributes Brand: Siliup Semiconductor
40V N Channel MOSFET Siliup SP40N01AGTO Featuring Fast Switching and Low Rdson for Power Applications
Product Overview The SP40N01AGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ideal for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is offered in a TOLL package. Product Attributes Brand: Siliup Semiconductor
1200V Silicon Carbide MOSFET Sichainsemi S1M075120H1 N Channel Enhancement for Switching Performance
Product Overview The S1M075120H1 is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt. Key benefits include reduced cooling effort and requirements, efficiency improvement, increased power density, and the ability to operate at higher system switching frequencies. This MOSFET is ideal for applications such as on-board chargers/PFC, EV
Silicon Carbide MOSFET Model S1M040120H 1200V Designed for EV Battery Chargers and On Board Chargers
Product Overview The S1M040120H is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt, leading to reduced cooling efforts, improved efficiency, and increased power density. This MOSFET is ideal for on-board chargers, EV battery chargers, booster/DC-DC converters, and switch-mode power supplies. Product Attributes Brand: SiC (Sichain
