Single FETs, MOSFETs
Siliup SP10HF25TF TO247 Package MOSFET Featuring Low Rdson and High Frequency Performance for Power Management
Product Overview The SP10HF25TF is a 250V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching, low gate charge, and low Rdson, making it suitable for PWM applications, hard switched and high frequency circuits, and power management. The device is 100% single ...
High Current 180A MOSFET Siliup SP10HF25TO 250V with Low Gate Charge and Avalanche Energy Testing
Product Overview The SP10HF25TO is a 250V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). This MOSFET is designed for applications requiring high efficiency and performance, including PWM applications, hard-switched, ...
30V complementary MOSFET Siliup SP3011CP8 in SOP8L package for battery protection and power switching
Product Overview The SP3011CP8 is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead...
power switching device Siliup SP20P08P8 P channel mosfet with low Rdson and fast switching features
Product Overview The SP20P08P8 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. It features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible ...
Power MOSFET Siliup SP020N18GHTQ 200V N Channel with Low On Resistance and Fast Switching Capability
Product Overview The SP020N18GHTQ is a 200V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, DC-DC converters, and power management systems. The device is 100% ...
Siliup SP30P06TH P Channel MOSFET with Low On Resistance and High Continuous Drain Current Capability
Product Overview The SP30P06TH is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient operation, it features fast switching, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters, high...
40V N Channel Power MOSFET Siliup SP40N02GNK with Low Gate Charge and High Continuous Current
Product Overview The SP40N02GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching speed, low Gate Charge, and low Rdson, enabled by advanced Split Gate Trench Technology. It is 100% tested for single pulse avalanche energy and is ...
TrenchFET N Channel MOSFET 30V Siliup SP2306T2J Designed for Load Switch Applications in Electronics
Product Overview The SP2306T2J is a 30V N-Channel MOSFET from Shanghai Siliup Semiconductor Technology Co. Ltd. Featuring TrenchFET technology, it offers low on-resistance at various gate-source voltages (38m typ. at 10V and 45m typ. at 4.5V) and a continuous drain current of 3.6A. This MOSFET is ...
Silicon Carbide MOSFET Siliup SP25N120CTF Featuring 1200V Drain Source Voltage and Low RDSon for Switching
Product Overview The SP25N120CTF is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high-speed switching with low capacitances, high blocking voltage with low RDS(on), and is designed for easy paralleling and simple driving. This RoHS compliant device ...
Power MOSFET 250V N Channel Siliup SP025N16GHTF with Split Gate Trench Technology and Low On Resistance
Product Overview The SP025N16GHTF is a 250V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ...
Surface Mount PDFN5X6 8L Package Siliup SP60N08GDNK 60V N Channel Power MOSFET for Motor Control Applications
Product Overview The SP60N08GDNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, a surface mount package, and advanced Split Gate Trench Technology. This MOSFET is 100% Single Pulse avalanche energy tested and is suitable for applicatio...
Low Rdson 110V N Channel MOSFET Siliup SP011N02AGHTO for Hard Switched and Power Management Circuits
Product Overview The SP011N02AGHTO is a 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, enabled by advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable ...
N Channel Power MOSFET Shenzhen ruichips Semicon RU3070L Featuring Lead Free and Green Device Design
Product OverviewThe RU3070L is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor, featuring a super high dense cell design for ultra-low on-resistance. It offers 100% avalanche tested and is available in lead-free and green devices (RoHS compliant). This MOSFET is ideal for load switch ...
750V Silicon Carbide Power MOSFET SG2M025075LJ with Low Switching Losses and High Blocking Voltage
Product Overview The SG2M025075LJ is a 750V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. It features high-speed switching with very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. The device also boasts a fast ...
N Channel MOSFET Siliup SP85N01BGHTO 85V Featuring Fast Switching and Low RDSon for Power Management
Product Overview The SP85N01BGHTO is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ...
Switching N Channel Planar MOSFET Siliup SP18N20TH with 200V Drain Source Voltage and Low Gate Charge
Product Overview The SP18N20TH is a 200V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET features fast switching speeds, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy and is ...
SG2M012075HJ 750V Silicon Carbide MOSFET with Low On Resistance and Temperature Independent Losses
Product Overview The SG2M012075HJ is a 750V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. Designed for high-speed switching applications, it offers very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. Its fast ...
150V P Channel MOSFET Siliup SP015P80GTH Designed for Power Switching and DC DC Converter Efficiency
Product Overview The SP015P80GTH is a 150V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench ...
1200V SiC MOSFET SP50N120CTK Low Capacitance High Blocking Voltage Device for Photovoltaic Inverters
Product Overview The SP50N120CTK is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high-speed switching with low capacitances and high blocking voltage combined with low RDS(on). It is designed for ease of paralleling and simple driving, making ...
P channel Power MOS FET RENESAS NP100P06PLG E1 AY with Low On State Resistance and Gate Protection
Product OverviewThis P-channel Power MOS FET is designed for high current switching applications, offering super low on-state resistance and low input capacitance. It features built-in gate protection and is designed for automotive applications, meeting AEC-Q101 qualifications. The product is Pb...
