Single FETs, MOSFETs
High Current 180A MOSFET Siliup SP10HF25TO 250V with Low Gate Charge and Avalanche Energy Testing
Product Overview The SP10HF25TO is a 250V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). This MOSFET is designed for applications requiring high efficiency and performance, including PWM applications, hard-switched, and high-frequency circuits, as well as power management solutions. It has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor
30V complementary MOSFET Siliup SP3011CP8 in SOP8L package for battery protection and power switching
Product Overview The SP3011CP8 is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead-free, surface mount SOP-8L package and is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line: SP3011CP8
power switching device Siliup SP20P08P8 P channel mosfet with low Rdson and fast switching features
Product Overview The SP20P08P8 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. It features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. The device has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Technology: Siliup Semiconductor Technology Product Line: P
Power MOSFET Siliup SP020N18GHTQ 200V N Channel with Low On Resistance and Fast Switching Capability
Product Overview The SP020N18GHTQ is a 200V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, DC-DC converters, and power management systems. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP020N18GHTQ Channel Type: N-Channel Package: TO-220-3L
Siliup SP30P06TH P Channel MOSFET with Low On Resistance and High Continuous Drain Current Capability
Product Overview The SP30P06TH is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient operation, it features fast switching, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters, high-frequency switching, and synchronous rectification applications. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP30P06TH Technology: P-Channel MOSFET
40V N Channel Power MOSFET Siliup SP40N02GNK with Low Gate Charge and High Continuous Current
Product Overview The SP40N02GNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching speed, low Gate Charge, and low Rdson, enabled by advanced Split Gate Trench Technology. It is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC Converters, Motor Control, and portable equipment. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP40N02GNK
TrenchFET N Channel MOSFET 30V Siliup SP2306T2J Designed for Load Switch Applications in Electronics
Product Overview The SP2306T2J is a 30V N-Channel MOSFET from Shanghai Siliup Semiconductor Technology Co. Ltd. Featuring TrenchFET technology, it offers low on-resistance at various gate-source voltages (38m typ. at 10V and 45m typ. at 4.5V) and a continuous drain current of 3.6A. This MOSFET is suitable for applications such as DC/DC converters and load switches for portable devices. Product Attributes Brand: Shanghai Siliup Semiconductor Technology Co. Ltd. Model:
Silicon Carbide MOSFET Siliup SP25N120CTF Featuring 1200V Drain Source Voltage and Low RDSon for Switching
Product Overview The SP25N120CTF is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high-speed switching with low capacitances, high blocking voltage with low RDS(on), and is designed for easy paralleling and simple driving. This RoHS compliant device is suitable for applications such as Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies, and High Voltage DC/DC Converters.
Power MOSFET 250V N Channel Siliup SP025N16GHTF with Split Gate Trench Technology and Low On Resistance
Product Overview The SP025N16GHTF is a 250V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code:
Surface Mount PDFN5X6 8L Package Siliup SP60N08GDNK 60V N Channel Power MOSFET for Motor Control Applications
Product Overview The SP60N08GDNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, a surface mount package, and advanced Split Gate Trench Technology. This MOSFET is 100% Single Pulse avalanche energy tested and is suitable for applications such as DC-DC converters and motor control. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: SP60N08GDNK Package: PDFN5X6-8L Technical Specificati
Low Rdson 110V N Channel MOSFET Siliup SP011N02AGHTO for Hard Switched and Power Management Circuits
Product Overview The SP011N02AGHTO is a 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, enabled by advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is available in a TOLL package. Product Attributes Brand: Siliup
N Channel Power MOSFET Shenzhen ruichips Semicon RU3070L Featuring Lead Free and Green Device Design
Product OverviewThe RU3070L is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor, featuring a super high dense cell design for ultra-low on-resistance. It offers 100% avalanche tested and is available in lead-free and green devices (RoHS compliant). This MOSFET is ideal for load switch applications.Product AttributesBrand: RuichipsOrigin: CHINACertifications: RoHS CompliantPackage: TO252Technical SpecificationsParameterTest ConditionMin.Typ.Max.UnitAbsolute
750V Silicon Carbide Power MOSFET SG2M025075LJ with Low Switching Losses and High Blocking Voltage
Product Overview The SG2M025075LJ is a 750V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. It features high-speed switching with very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. The device also boasts a fast intrinsic diode with low reverse recovery (Qrr) and temperature-independent turn-off switching losses. These characteristics contribute to reduced cooling efforts, improved efficiency
N Channel MOSFET Siliup SP85N01BGHTO 85V Featuring Fast Switching and Low RDSon for Power Management
Product Overview The SP85N01BGHTO is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high frequency circuits, as well as power management. The device is packaged in a TOLL package. Product Attributes Brand: Siliup
Switching N Channel Planar MOSFET Siliup SP18N20TH with 200V Drain Source Voltage and Low Gate Charge
Product Overview The SP18N20TH is a 200V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET features fast switching speeds, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters and synchronous rectification. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: N-Channel Planar MOSFET Package: TO-252
SG2M012075HJ 750V Silicon Carbide MOSFET with Low On Resistance and Temperature Independent Losses
Product Overview The SG2M012075HJ is a 750V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. Designed for high-speed switching applications, it offers very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. Its fast intrinsic diode with low reverse recovery (Qrr) and temperature-independent turn-off switching losses contribute to efficiency improvements and reduced cooling requirements. This RoHS
150V P Channel MOSFET Siliup SP015P80GTH Designed for Power Switching and DC DC Converter Efficiency
Product Overview The SP015P80GTH is a 150V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. The device has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP015P80GTH Package: TO
1200V SiC MOSFET SP50N120CTK Low Capacitance High Blocking Voltage Device for Photovoltaic Inverters
Product Overview The SP50N120CTK is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high-speed switching with low capacitances and high blocking voltage combined with low RDS(on). It is designed for ease of paralleling and simple driving, making it suitable for demanding applications such as Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies, and High Voltage DC/DC
P channel Power MOS FET RENESAS NP100P06PLG E1 AY with Low On State Resistance and Gate Protection
Product OverviewThis P-channel Power MOS FET is designed for high current switching applications, offering super low on-state resistance and low input capacitance. It features built-in gate protection and is designed for automotive applications, meeting AEC-Q101 qualifications. The product is Pb-free.Product AttributesBrand: Renesas ElectronicsCertifications: AEC-Q101 qualifiedMaterial: Pb-free (external electrode)Application: AutomotiveTechnical SpecificationsItemSymbolMinTy
Lead free complementary MOSFET Siliup SP4012CP8 40V surface mount device designed for battery protection
Product Overview The SP4012CP8 is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this lead-free, surface-mount device is ideal for battery protection, load switching, and power management applications. It features 100% single-pulse avalanche energy testing for enhanced reliability. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line: Complementary MOSFET Lead Free: Yes Package
