Single FETs, MOSFETs

PPJA3405-AU 30V P-Channel Enhancement Mode MOSFET The PPJA3405-AU is a 30V P-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, AEC-Q101 qualification, and compliance with EU RoHS 2.0. This MOSFET offers low on-resistance and is suitable for various demanding applications. Product Attributes Brand: Panjit International Inc. Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, Green molding

Product OverviewThe PJM05P40SA is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is RoHS and Reach Compliant, and Halogen and Antimony Free, making it suitable for various load switch, PWM, and power management applications. This device offers a VDS of -40V and an ID of -5A, with low RDS(on) ratings of < 88m @VGS= -10V and < 117m @VGS= -4.5V.Product AttributesBrand: PingJingSemiCertifications: RoHS and Reach CompliantMaterial: Halogen and

Product OverviewThe PJM15N60DF is an N-Channel Enhancement Mode Power MOSFET designed for efficient power switching. It features low gate charge and low on-resistance (RDS(ON)), making it suitable for applications like load switching and PWM control. With a VDS of 60V and ID of 15A, it offers a compact DFN2x2-6L package.Product AttributesBrand: PingJingSemiRevision: 0.0Date: Dec-2021Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitAbsolute Maximum

Product OverviewThe SI2312 is an N-Channel Enhancement Mode Power MOSFET in a SOT-23 package. It features a high-density cell design for ultra-low on-resistance and is manufactured using advanced trench process technology. This MOSFET is halogen-free and RoHS compliant, making it suitable for various electronic applications.Product AttributesBrand: Origin: Shenzhen, ChinaPackage: SOT-23 Small Outline Plastic PackageCertifications: UL: 94V-0, Halogen free and RoHS compliantTec

Product OverviewThe PPJE8405 is a 30V P-Channel Enhancement Mode MOSFET with ESD protection. It features low on-state resistance at various gate-source voltages and is manufactured using advanced trench process technology. This MOSFET is specifically designed for switch load and PWM applications. It is ESD protected (2KV HBM) and compliant with EU RoHS 2011/65/EU directive and IEC61249 standard (Halogen Free).Product AttributesBrand: Panjit International Inc.Certifications:

Product OverviewThe SI2302-L is a TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It features a lead-free product acquisition and is available in a surface mount SOT23 package. Key advantages include its high performance and reliability.Product AttributesBrand: SZPIELENSTPackage: SOT23Certifications: Lead free product is acquiredTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitAbsolute Maximum RatingsVDS20VVGS

SI2333 P-Channel Enhancement Mode Power MOSFET The SI2333 is a P-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It features advanced trench process technology and is housed in a SOT-23 small outline plastic package. This MOSFET is halogen-free and RoHS compliant. Product Attributes Brand: (Parker Microelectronics) Origin: Shenzhen, China Package Type: SOT-23 Small Outline Plastic Package Certifications: UL

UnitedSiC UF3C170400K3S SiC FET Product Overview The UnitedSiC UF3C170400K3S is a 1700V, 410mW Silicon Carbide (SiC) FET device designed for high-efficiency power conversion applications. It features a unique cascode circuit configuration combining a normally-on SiC JFET with a Si MOSFET, resulting in a normally-off SiC FET with standard gate-drive characteristics. This design allows for a direct 'drop-in replacement' for existing Si IGBTs, Si FETs, SiC MOSFETs, or Si

PJM2319PSA P-Enhancement Field Effect Transistor The PJM2319PSA is a P-Enhancement Mode Field Effect Transistor designed for fast switching and ultra-low Qgd. It features a low RDS(on) of 80 m @VGS= -10V, making it suitable for applications such as Load Switches and DC/DC Converters. Product Attributes Brand: PingJingSemi Product Code: PJM2319PSA Type: P-Enhancement Field Effect Transistor Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Absolute

Product OverviewThe AO3415-L is a P-Channel MOSFET designed for various applications. It offers key electrical characteristics such as low on-state resistance and specified breakdown voltage, making it suitable for power management tasks.Product AttributesBrand: SZPIELENSTPackage: SOT23Technical SpecificationsParameterConditionMinTypMaxUnitAbsolute Maximum RatingsVDS-20VID-4.8ARDS(ON)VGS = -4.5V45mRDS(ON)VGS = -2.5V65mVGS8VV(BR)DSS-20VTJMaximum Junction Temperature150CTSTGSto

Product Overview The SI2333CDS-L is a P-Channel MOSFET designed for various applications. It features low RDS(ON), meets UL 94 V-0 flammability rating, and is Moisture Sensitivity Level 1 compliant. This product is Halogen Free available upon request and Lead Free/RoHS Compliant. Product Attributes Brand: SZPIELENST Certifications: UL 94 V-0 Flammability Rating, RoHS Compliant Features: Low RDS(ON), Moisture Sensitivity Level 1, Halogen Free Available Upon Request Technical

Product Overview The UJ4C075033B7S is a 750V, 33mW G4 SiC FET designed for high-performance switching applications. It features a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. This device offers standard gate-drive characteristics, enabling it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Key advantages include ultra-low gate charge (QG = 37.8nC),

Product OverviewThe PJM05DN60PA is a Dual N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, featuring an advanced trench technology for ultra-low RDS(on). It is suitable for PWM applications, load switching, and power management systems, offering a VDS of 60V and an ID of 5A with RDS(on) less than 40m at VGS=10V.Product AttributesBrand: PingJingSemiModel: PJM05DN60PAPackage: SOP-8Marking Code: 6005Technical SpecificationsParameterSymbolTest

Product OverviewThe PJM9926ANPA is a Dual N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is designed for power switching applications, including hard switched and high frequency circuits, and uninterruptible power supplies. This RoHS and Reach compliant component is halogen and antimony free, offering excellent performance with low on-resistance.Product AttributesBrand: PingjingsemiCertifications: RoHS, Reach CompliantMaterial: Halogen and

Product OverviewThe PJM60H02NTE is an N-Channel Enhancement Mode Power MOSFET designed for power switch circuits in adaptors and chargers. It offers fast switching, low gate charge, and low RDS(on), making it an efficient component for these applications. Key features include a high Drain-Source Voltage of 600V and a continuous Drain Current of 2A.Product AttributesBrand: PingJingSemiProduct Code: PJM60H02NTEPackage: TO-252Technical SpecificationsParameterSymbolTest

Product OverviewThe PJM84PSA is a P-Channel Enhancement Mode Power MOSFET designed for energy-efficient applications. It features low threshold voltage, high-speed switching, and ESD protection up to 2KV. Its miniature surface mount package saves board space, making it suitable for PWM applications, load switches, and power management.Product AttributesBrand: PingJingSemiPackage: SOT-23ESD Protected (HBM) up to 2KVTechnical SpecificationsParameterSymbolTest ConditionMin.Typ

Product OverviewThe PPJW5N10 is a 100V N-Channel Enhancement Mode MOSFET designed for various applications. It features low on-resistance, low input capacitance, and is compliant with EU RoHS 2.0 and uses a green molding compound. This MOSFET is suitable for applications requiring efficient power handling and switching.Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2.0, IEC 61249Material: Green molding compoundPackaging: SOT-223Technical Specificati

UnitedSiC UJ4SC075006K4S: 750V, 5.9mW SiC FET The UJ4SC075006K4S is a 750V, 5.9mW Silicon Carbide (SiC) Field-Effect Transistor (FET) designed for high-performance power applications. This device utilizes a unique 'cascode' circuit configuration, integrating a normally-on SiC JFET with a low-voltage Si MOSFET to achieve a normally-off SiC FET. Its standard gate-drive characteristics make it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices.

Product OverviewThe PJM10H06NSQ is an N-Channel Enhancement Mode Power MOSFET featuring excellent RDS(on) and low gate charge. It is designed for power switching applications, including Uninterruptible Power Supplies. With a VDS of 100V and ID of 6A, it offers RDS(on) < 140m @VGS=10V.Product AttributesBrand: PingJingSemiPackage: SOT-89Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitAbsolute Maximum RatingsDrain-Source VoltageVDS100VGate-Source VoltageVGS

Product OverviewThe PJM138NSA is an N-Channel Enhancement Mode Power MOSFET designed for rugged and reliable performance. It features low gate charge and RDS(on), with ESD protection up to 2KV (HBM). This MOSFET is suitable for applications requiring direct logic-level interface with TTL/CMOS, such as solid-state relays and battery-operated systems.Product AttributesBrand: PJMProduct Type: N-Channel Enhancement Mode Power MOSFETESD Protection: Up to 2KV (HBM)Technical