Single Bipolar Transistors

quality NPN silicon epitaxial planar transistor CBI 2N5551U designed for high voltage amplifier applications factory

NPN silicon epitaxial planar transistor CBI 2N5551U designed for high voltage amplifier applications

Product Overview The 2N5551U is an NPN Silicon Epitaxial Planar Transistor designed for general-purpose, high-voltage amplifier applications. It offers reliable performance in various electronic circuits requiring amplification at high voltages. Product Attributes Brand: 2N Model: 5551U Type: NPN Silicon Epitaxial Planar Transistor Package: SOT-89 Technical Specifications Parameter Symbol Value Unit Conditions Absolute Maximum Ratings Collector Base Voltage VCBO 180 V (Ta =

quality General Purpose PNP Silicon Epitaxial Planar Transistor CBI MMBTSA1576W with SOT323 Package Design factory

General Purpose PNP Silicon Epitaxial Planar Transistor CBI MMBTSA1576W with SOT323 Package Design

Product Overview This is a PNP Silicon Epitaxial Planar Transistor, categorized into three groups (Q, R, and S) based on its DC current gain. It is designed for general-purpose applications and features a SOT-323 package. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: PNP Silicon Epitaxial Planar Transistor Package: SOT-323 Technical Specifications Parameter Symbol Min. Typ. Max. Unit Conditions Absolute Maximum Ratings (Ta = 25 C)

quality NPN silicon epitaxial transistor CBI 2SC3357U designed for noise sensitive VHF UHF CATV applications factory

NPN silicon epitaxial transistor CBI 2SC3357U designed for noise sensitive VHF UHF CATV applications

Product Overview The 2SC3357 is an NPN silicon epitaxial transistor engineered for low-noise amplification across VHF, UHF, and CATV bands. It offers a large dynamic range and favorable current characteristics, making it suitable for demanding RF applications. Key performance indicators include a noise figure (NF) of 1.1 dB TYP. and a gain (Ga) of 8.0 dB TYP. at 1.0 GHz under specific test conditions, and improved performance at higher currents with NF = 1.8 dB TYP. and Ga =

quality High frequency NPN transistor CBI S9018 designed for local oscillator and amplifier applications factory

High frequency NPN transistor CBI S9018 designed for local oscillator and amplifier applications

Product Overview The S9018 is an NPN transistor designed for AM/FM amplifier and local oscillator applications in FM/VHF tuners. It features a high current gain bandwidth product (fT) of 1.1 GHz (Typ) and is housed in a SOT-23 package. This transistor is suitable for general-purpose amplification and oscillation circuits within its specified operating conditions. Product Attributes Marking: J8 Package Type: SOT-23 (Plastic surface mounted package; 3 leads) Technical

quality NPN Silicon Epitaxial Planar Transistor CBI MPSA44U for High Voltage Electronic Circuit Applications factory

NPN Silicon Epitaxial Planar Transistor CBI MPSA44U for High Voltage Electronic Circuit Applications

Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for high voltage switching and amplifier applications. It offers reliable performance with specific electrical characteristics suitable for various electronic circuits. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Material: Silicon Epitaxial Planar Package: SOT-89 Technical Specifications Parameter Symbol Value Unit Conditions Absolute Maximum Ratings Collector Base

quality General Purpose Audio Frequency Amplifier Transistor CBI MMBTSC2712 with SOT23 Plastic Package NPN Silicon factory

General Purpose Audio Frequency Amplifier Transistor CBI MMBTSC2712 with SOT23 Plastic Package NPN Silicon

Product Overview The MMBTSC2712 is an NPN Silicon Epitaxial Planar Transistor designed for general-purpose audio frequency amplifier applications. It offers high voltage and current capabilities with VCEO up to 50V and IC up to 150mA. The transistor features high DC current gain (hFE ranging from 70 to 700), low noise with a typical NF of 1dB, and is housed in a small SOT-23 package. It is available in four groups (O, Y, G, L) categorized by their DC current gain. Product

quality Audio Frequency Amplifier and Low Speed Switching Transistor CBI 2SB772PU PNP Silicon Epitaxial Type factory

Audio Frequency Amplifier and Low Speed Switching Transistor CBI 2SB772PU PNP Silicon Epitaxial Type

Product Overview The 2SB772U is a PNP Silicon Epitaxial Power Transistor designed for audio frequency power amplifier and low-speed switching applications. It offers reliable performance in demanding electronic circuits. Product Attributes Brand: Not specified Origin: Not specified Material: Silicon Epitaxial Color: Not specified Package: SOT-89 Marking: B772 Technical Specifications Parameter Symbol Min. Typ. Max. Unit Conditions Collector Base Voltage -VCBO 40 V Collector

quality General purpose electronic transistor CBI BC849CW NPN silicon epitaxial planar for switching circuits factory

General purpose electronic transistor CBI BC849CW NPN silicon epitaxial planar for switching circuits

Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers a range of models (BC846W, BC847W, BC848W, BC849W, BC850W) with varying voltage and current ratings. Product Attributes Type: NPN Silicon Epitaxial Planar Transistor Brand: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Models Value Unit Absolute Maximum Ratings (Ta = 25 C) Collector Base Voltage VCBO

quality Switching and General Purpose Electronic Circuit Transistor CBI BC858CW NPN Silicon Epitaxial Planar factory

Switching and General Purpose Electronic Circuit Transistor CBI BC858CW NPN Silicon Epitaxial Planar

Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers various models with distinct voltage and current ratings, making it suitable for a range of electronic circuits. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: NPN Silicon Epitaxial Planar Transistor Technical Specifications Parameter Symbol BC846W BC847W BC848W BC849W BC850W Unit Absolute Maximum Ratings (Ta =

quality Electronic Component CBI MPSA42U NPN Transistor High Breakdown Voltage Low Saturation Voltage Device factory

Electronic Component CBI MPSA42U NPN Transistor High Breakdown Voltage Low Saturation Voltage Device

Product Overview This NPN transistor is designed for applications requiring high breakdown voltage and low collector-emitter saturation voltage. It serves as a complementary component to the MPSA92U (PNP) transistor. Marked as A42, this component is suitable for various electronic circuits where these characteristics are critical. Its SOT-89 package outline ensures compatibility with standard surface-mount assembly processes. Product Attributes Complementary to MPSA92U (PNP)

quality General purpose electronic transistor CBI SS8050 NPN bipolar junction for amplification and switching circuits factory

General purpose electronic transistor CBI SS8050 NPN bipolar junction for amplification and switching circuits

Product Overview The SS8050 is an NPN bipolar junction transistor designed for general-purpose applications. It is complementary to the SS8550 transistor. This device is suitable for various electronic circuits requiring amplification or switching functionalities. Product Attributes Marking: Y1 Package: SOT-23 (Plastic surface mounted package; 3 leads) Technical Specifications Parameter Symbol Test Conditions MIN TYP MAX Units MAXIMUM RATINGS (TA=25 unless otherwise noted)

quality SOT23 Package PNP Silicon Transistor CBI BC858B for Switching and Amplifier in Electronic Applications factory

SOT23 Package PNP Silicon Transistor CBI BC858B for Switching and Amplifier in Electronic Applications

Product Overview This document details the PNP Silicon Epitaxial Transistor, suitable for switching and amplifier applications. It is housed in a SOT-23 plastic package. The transistors are available in various models, each with specific voltage and current ratings, designed for reliable performance in electronic circuits. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Plastic Package Technical Specifications Absolute Maximum

quality Low voltage plastic encapsulated PNP transistor CBI 2SB1197KR with continuous collector current minus 0.8A factory

Low voltage plastic encapsulated PNP transistor CBI 2SB1197KR with continuous collector current minus 0.8A

Product Overview This is a plastic-encapsulated PNP transistor designed for general-purpose applications. It features a low VCE(sat) of less than -0.5V at IC / IB = -0.5A / -50mA and a continuous collector current (IC) of -0.8A. This transistor complements the 2SD1781 and is suitable for use in various electronic circuits requiring PNP amplification or switching capabilities. Product Attributes Type: Transistor (PNP) Encapsulation: Plastic-Encapsulate Package: SOT-23 Origin:

quality Axial planar die PNP transistor CBI BC807-16 optimized for automated insertion in electronic devices factory

Axial planar die PNP transistor CBI BC807-16 optimized for automated insertion in electronic devices

Product Overview A PNP transistor ideally suited for automatic insertion, featuring an axial planar die construction. A complementary NPN type (BC817) is available. This transistor is designed for various electronic applications requiring reliable performance and ease of integration into automated manufacturing processes. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Construction: Axial planar die Complementary Type: NPN

quality NPN Darlington Transistor CBI BCV27T with 40 Volt Collector Base Voltage and Plastic Surface Mounted Package factory

NPN Darlington Transistor CBI BCV27T with 40 Volt Collector Base Voltage and Plastic Surface Mounted Package

Product Overview The BCV27T is an NPN Darlington transistor specifically designed for preamplifier input applications. It offers robust performance characteristics suitable for demanding electronic circuits. Product Attributes Marking: FF Package Outline: Plastic surface mounted package; 3 leads SOT-23 Technical Specifications Parameter Symbol Test conditions Min Typ Max Unit Absolute Maximum Ratings (Ta = 25 OC) Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO

quality SOT23 Package NPN Silicon Epitaxial Transistor CBI BC850C Designed for Switching and Amplifier Tasks factory

SOT23 Package NPN Silicon Epitaxial Transistor CBI BC850C Designed for Switching and Amplifier Tasks

Product Overview The BC846-BC850 series are NPN Silicon Epitaxial Transistors designed for switching and amplifier applications. For complementary PNP types, the BC856-BC860 is recommended. These transistors are housed in a SOT-23 Plastic Package. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: NPN Silicon Epitaxial Transistor Package: SOT-23 Plastic Package Technical Specifications Parameter Symbol BC846 BC847, BC850 BC848, BC849 Units

quality medium power PNP transistor CBI MMBT5401T featuring 200 mW collector power dissipation surface mount factory

medium power PNP transistor CBI MMBT5401T featuring 200 mW collector power dissipation surface mount

Product Overview This PNP transistor, complementary to the MMBT5551W, is designed for medium power amplification and switching applications. It features a small surface mount package, making it suitable for various electronic designs requiring compact components. The transistor offers reliable performance with a maximum collector current of 600 mA and a collector power dissipation of 200 mW. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package

quality Silicon NPN Digital Transistor in SOT23 Package BLUE ROCKET BRDTC114EKAQ with Builtin Bias Resistors factory

Silicon NPN Digital Transistor in SOT23 Package BLUE ROCKET BRDTC114EKAQ with Builtin Bias Resistors

Product Overview The BRDTC114EKAQ is a Silicon NPN Digital Transistor housed in a SOT-23 plastic package. It features built-in bias resistors, simplifying circuit design and reducing component count and manufacturing processes. This product is qualified to AEC-Q101 Standards for High Reliability and is halogen-free, making it suitable for demanding automotive applications. It is designed for switching, interface, and driver circuit applications. Product Attributes Brand: FS

quality Automotive grade transistor BLUE ROCKET BRMUN5311WSQ double silicon NPN PNP with built in bias resistors factory

Automotive grade transistor BLUE ROCKET BRMUN5311WSQ double silicon NPN PNP with built in bias resistors

Product Overview The BRMUN5311WSQ is a double silicon NPN and PNP transistor housed in a SOT-363 plastic package. It features built-in bias resistors, which simplify circuit design, reduce component count, and streamline manufacturing processes. This product is qualified to AEC-Q101 Standards for High Reliability and is a Halogen-Free (HF) product. It is designed for switching, interface circuit, and driver circuit applications, meeting the stringent requirements of

quality TO92LM Package Silicon NPN Transistor BLUE ROCKET 2SD1207 for in Lamp Drivers Relay and Automotive Wiring factory

TO92LM Package Silicon NPN Transistor BLUE ROCKET 2SD1207 for in Lamp Drivers Relay and Automotive Wiring

Product Overview The 2SD1207 is a Silicon NPN transistor housed in a TO-92LM plastic package. It is designed for applications requiring low saturation voltage and high current capacity. Typical uses include power supplies, relay drivers, lamp drivers, and automotive wiring. Product Attributes Brand: Fsb (implied by URL and datasheet header) Package Type: TO-92LM Plastic Package Technical Specifications Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Collector

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