Single Bipolar Transistors

Product OverviewThe MMBT3906T is a PNP bipolar transistor in a SOT-523 package, designed for medium power amplification and switching applications. It serves as a complementary device to the MMBT3904T, offering a small surface mount package ideal for compact electronic designs.Product AttributesBrand: MicrodiodeComplementary to: MMBT3904TPackage Type: SOT-523Encapsulation: PlasticMarking: 3NTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base

Product Overview This NPN Silicon Transistor is a Darlington transistor with an integrated damping diode, designed for high-gain circuits. It is suitable for applications requiring high amplification factors. Product Attributes Brand: Shenzhen Minos () Type: NPN Silicon Transistor Construction: Darlington Integrated Component: Damping Diode Origin: Shenzhen, China Technical Specifications Parameter Symbol Description Min Typical Max Unit Test Conditions Absolute Maximum

Product Overview The Nexperia PBHV8540X is an NPN high-voltage, low VCEsat transistor designed for medium power applications. Packaged in an SOT89 (SC-62) surface-mounted device (SMD) plastic package, this transistor offers high voltage capability and a low collector-emitter saturation voltage (VCEsat). It features high collector current capability (IC and ICM) and high DC current gain (hFE) at high IC. The PBHV8540X is AEC-Q101 qualified, making it suitable for automotive

Product Overview This PNP Darlington transistor is designed for general-purpose applications. It offers high current gain and is suitable for various electronic circuits requiring amplification or switching. The device is packaged in a TO-220 form factor. Product Attributes Brand: MNS (Shenzhen Minos) Origin: China (Shenzhen) Package Type: TO-220 Technical Specifications Parameter Symbol Description Min Typical Max Unit Test Conditions Absolute Maximum Ratings (Ta=25) Storage

Product Overview The Nexperia BCX56 series comprises NPN medium power transistors designed for surface-mounting applications. Housed in a SOT89 (SC-62) plastic package, these transistors offer high collector current capability (IC and ICM), multiple current gain selections, and high power dissipation. They are suitable for a range of applications including linear voltage regulators, MOSFET drivers, low-side switches, battery-driven devices, power management, and amplifiers.

Product Overview This NPN Silicon Transistor is designed for audio amplification and switching power amplification applications. It offers reliable performance with clearly defined electrical parameters and maximum ratings to ensure optimal circuit design and device longevity. Product Attributes Brand: MNS Type: NPN Silicon Transistor Origin: Shenzhen Minos Technology Co., Ltd. (Headquarters) Technical Specifications Parameter Symbol Description Min. Typ. Max. Unit Test

Product Overview The MJL21194 is a Minos Silicon NPN triple diffused power transistor designed for power amplifier applications. It is complementary to the MJL21193 and features a high collector voltage of 250V (min), making it recommended for 100-W high-fidelity audio frequency amplifier output stages. Note: Continuous operation under heavy loads may significantly decrease product reliability even if operating conditions are within absolute maximum ratings. Product

Product OverviewThe A1300 is a 10V 2A PNP High-Frequency Low Vce(sat) Transistor designed for strobo flash and medium power amplifier applications. It offers high DC current gain, excellent frequency performance, and low saturation voltage.Product AttributesBrand: Microdiode Electronics (Shenzhen)Package: SOT-23-3LTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitCollector-Base VoltageVCBO-20VCollector-Emitter VoltageVCEO-10VEmitter-Base VoltageEBO-6VCollector

Product OverviewThe BCX53, BCX53-10, and BCX53-16 are PNP plastic encapsulated transistors designed for general-purpose applications. They offer reliable performance with key features such as a collector current of -1.0 A and a collector power dissipation of 500 mW. These transistors are Halogen Free available upon request, Moisture Sensitivity Level 1, and meet UL 94 V-0 flammability rating. They are lead-free and RoHS compliant.Product AttributesBrand: MCCSEMIMaterial:

Nexperia BCP56T Series: 80 V, 1 A NPN Medium Power Transistors Product Overview The Nexperia BCP56T series comprises NPN medium power transistors housed in a SOT223 (SC-73) surface-mounted device (SMD) plastic package. These transistors offer high collector current capability, multiple current gain selections, and robust power dissipation capabilities, making them suitable for applications such as linear voltage regulators, MOSFET drivers, high-side switches, power management

Product Overview This is a Silicon Bipolar Epitaxial Planar NPN-PNP Matched Power Amplifier Transistor designed for high-fidelity audio power amplifier pre-stage driving. It offers a large output current of 8A, a high breakdown voltage of VCEO 250V, and a wide operating area. The transistor also boasts superior frequency characteristics with fT > 30MHz. It is suitable for continuous load operation under demanding conditions such as high temperature, high voltage, and large

Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier with capabilities for 150mWatts of Power Dissipation. It operates within a junction temperature range of -55C to 150C and can handle a collector current of 0.6A.Product AttributesBrand: MCC (Micro Commercial Components)Certifications: RoHS Compliant (indicated by "P" suffix), UL 94 V-0 flammability ratingMaterial: EpoxyOrigin: USA (implied by address)Halogen Free: Available upon request (by adding "-HF" suffix

Product OverviewSuper Fast Glass Passivated Rectifiers offering high current capability, low forward voltage drop, and low power loss for high efficiency. These rectifiers feature high surge capability and are guaranteed for high temperature soldering. They are suitable for mounting in any position.Product AttributesBrand: Microdiode (implied by URL)Model Series: SF1008ET(D)Package Types: TO-251 (I-PAK), TO-252 (D-PAK)Material: Molded plastic body with plated axial leadsPolar

Product Overview The Nexperia BC847xW series comprises NPN general-purpose transistors designed for a wide range of switching and amplification applications. These transistors are housed in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package, offering three distinct gain selections for versatile use. With a collector-emitter voltage of 45 V and a collector current of 100 mA, they provide reliable performance in compact electronic designs. Product

Product Overview The Nexperia BC846BS is a general-purpose NPN/NPN transistor pair housed in a compact SOT363 (SC-88) SMD plastic package. Designed for efficiency and space-saving, it offers low collector capacitance, low collector-emitter saturation voltage, and closely matched current gain. This configuration minimizes component count and board space while preventing mutual interference between transistors, making it ideal for general-purpose switching and amplification

Product OverviewThe BCW68G is a PNP epitaxial planar die construction small signal transistor ideally suited for automatic insertion. It offers low current and low voltage capabilities, making it suitable for various electronic applications. This device is halogen-free, "Green", moisture sensitivity level 1, and meets UL 94 V-0 flammability rating. It is lead-free and RoHS compliant.Product AttributesBrand: MCCSEMIConstruction: Epitaxial Planar DieCertifications: UL 94 V-0

Product Overview This PNP Silicon Transistor is designed for audio amplification and switching power amplification applications. It offers reliable performance with defined electrical characteristics and is suitable for various industrial and electronic circuits requiring amplification or switching functions. Product Attributes Brand: MNS-KX Type: PNP Silicon Transistor Package: TO-252 Technical Specifications Parameter Symbol Description Min Typ Max Unit Test Conditions

Product Overview This is a PNP Silicon Transistor, specifically a Darlington transistor with an integrated damping diode. It is designed for high-gain circuits and offers a high collector current capability. Key specifications include a collector-emitter voltage of -100V, a continuous collector current of -5A, and a high DC current gain (HFE) of 1000. This device is suitable for applications requiring significant signal amplification. Product Attributes Brand: MNS-KX Type:

Product OverviewThe CX7 is a plastic encapsulated transistor designed for general-purpose applications. It is a halogen-free, "Green" device meeting UL94V-0 flammability rating and RoHS compliance. This device offers lead-free finishing and is suitable for various electronic circuits.Product AttributesBrand: Micro Commercial Components (MCC)Material: Plastic EncapsulationColor: Green (Halogen-Free)Certifications: RoHS Compliant, UL94V-0 Flammability RatingTechnical Specificat

NPN Small Signal Transistor 300mW This NPN small signal transistor, available in the BC817-16HE3 through BC817-40HE3 series, is designed for general-purpose applications. It features a 300mW power dissipation and is housed in a SOT-23 package. The device is AEC-Q101 qualified, Halogen Free, and RoHS compliant, making it suitable for various electronic designs requiring reliable performance and environmental consideration. Product Attributes Brand: MCCSEMI.COM Type: NPN Small