Single Bipolar Transistors

Product Overview The Nexperia BF570 is an NPN medium frequency transistor designed for low current and low voltage applications. It features low feedback capacitance, making it suitable for use in monitors and battery-equipped applications. This transistor is housed in a compact SOT23 plastic package. Product Attributes Brand: Nexperia (formerly NXP Semiconductors) Product Type: NPN medium frequency transistor Package Type: SOT23 plastic package Marking: 61* or B26 (where *

Product Overview The Nexperia BCP51, BCX51, and BC51PA series are PNP medium power transistors designed for Surface-Mounted Device (SMD) plastic packages. These transistors offer high current capability, multiple current gain selections, and high power dissipation. They are suitable for applications such as linear voltage regulators, high-side switches, battery-driven devices, power management, MOSFET drivers, and amplifiers. Select models feature exposed heatsinks for

Product Overview The Minos Silicon MJL21193 is a PNP epitaxial power transistor designed for high-fidelity audio frequency amplifier output stages. It offers a high collector voltage of -250V (min) and is complementary to the MJL21194. This device is recommended for 100-W audio amplifier applications. Note: Continuous operation under heavy loads, such as high temperature, current, or voltage, or significant temperature changes, may significantly decrease product reliability,

Product Overview The Nexperia PMBT3906 is a PNP switching transistor housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. Designed for general amplification and switching applications, this transistor offers a collector-emitter voltage (VCEO) of -40 V and a collector current (IC) capability of -200 mA. Its NPN complement is the PMBT3904. Product Attributes Brand: Nexperia Package Type: SOT23 (TO-236AB) Transistor Type: PNP Switching Transistor

Product Overview The Nexperia BC847BPN-Q is an NPN/PNP general-purpose transistor pair housed in a very small SOT363 (SC-88) SMD plastic package. Designed for general-purpose switching and amplification, this transistor pair offers low collector capacitance, low collector-emitter saturation voltage, and closely matched current gain. Its compact design reduces component count and board space, with no mutual interference between the transistors. Qualified according to AEC-Q101,

MMBTA42 - NPN TransistorThe MMBTA42 is an NPN transistor in a SOT-23 package, designed for applications requiring a low collector-emitter saturation voltage and high breakdown voltage. It serves as a complementary part to the MMBTA92 (PNP) transistor. This device is suitable for general-purpose amplification and switching circuits.Product AttributesBrand: microdiodePackage Type: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMinMaxUnitCollector-Base Breakdown

Product Overview The Nexperia BC847x series comprises NPN general-purpose transistors designed for a wide range of switching and amplification applications. These transistors are housed in compact SOT23 (TO-236AB) surface-mounted plastic packages, offering three distinct gain selections to cater to various design needs. With a collector-emitter voltage of 45 V and a collector current of 100 mA, they provide reliable performance for general-purpose electronic circuits. Product

Product Overview The 2SA1941 is a Minos Silicon PNP Epitaxial Type transistor designed for Power Amplifier Applications. It serves as a complementary component to the 2SC5198 and is recommended for 100-W high-fidelity audio frequency amplifier output stages due to its high collector voltage of -140V (min). Continuous operation under heavy loads, such as high temperature, current, or voltage, or significant temperature changes, may significantly decrease product reliability,

Product Overview The Nexperia BCV47 is an NPN Darlington transistor housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. Designed for medium current applications up to 500 mA and low voltages up to 60 V, it offers a high DC current gain of a minimum of 2000. Its PNP complement is the BCV26. This transistor is suitable for applications such as preamplifier input amplification. Product Attributes Brand: Nexperia Product Type: NPN Darlington

Product Overview This is a silicon bipolar epitaxial planar NPN-PNP matched power amplifier transistor designed for high-fidelity audio applications. It offers a large collector current of Ic=16A and a high collector-emitter voltage of VCEO250V. The transistor features a wide safe operating area (3.2A/80V @ 1 Second) and excellent frequency characteristics (fT>20MHz), making it suitable for output stages of high-fidelity audio amplifiers exceeding 100W. It is designed for

Product Overview The Minos 2SC5198 is a Silicon NPN Triple Diffused Type transistor designed for power amplifier applications. It is complementary to the 2SA1941 and features a high collector voltage of 140V (min). This transistor is recommended for use in 100-W high-fidelity audio frequency amplifier output stages. Note: Continuous operation under heavy loads, such as high temperature, current, or voltage, or significant temperature changes, may significantly reduce product

Product OverviewThe BC846, BC847, and BC848 are NPN bipolar transistors in a SOT-23 package, ideally suited for automatic insertion. They are designed for switching and AF amplifier applications.Product AttributesBrand: MicrodiodePackage: SOT-23Technical SpecificationsModelParameterSymbolTest ConditionsMinUnitMaxTypBC846, BC847, BC848Collector-Base VoltageVCBOIE=0VBC84680BC84750BC84830BC846, BC847, BC848Collector-Emitter VoltageVCEOIB=0VBC84665BC84745BC84830Emitter-Base

Nexperia BCP56 Series: 80 V, 1 A NPN Medium Power Transistors Product Overview The Nexperia BCP56 series offers NPN medium power transistors in a compact SOT223 (SC-73) surface-mounted device (SMD) plastic package. These transistors are designed for high collector current capability, offering multiple current gain selections and a high power dissipation capability. They are ideal for applications such as linear voltage regulators, MOSFET drivers, low-side switches, power

Product Overview This NPN silicon transistor is designed for audio power amplification. It offers reliable performance with key electrical parameters and is housed in a TO-220 package, suitable for various audio applications. Product Attributes Brand: MNS Type: NPN SILICON TRANSISTOR Package: TO-220 Origin: Shenzhen Minos (Shenzhen Minos reserves the right to make changes in this specification sheet and is subject to change without prior notice.) Technical Specifications

MMBT2907A Transistor (PNP)The MMBT2907A is a PNP transistor in a SOT-23 plastic-encapsulated package. It features epitaxial planar die construction and is a complementary NPN type to the MMBT2222A. This transistor is suitable for various electronic applications requiring amplification and switching.Product AttributesBrand: MicrodiodePackage: SOT-23Type: PNPComplementary NPN Type: MMBT2222ATechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base

Product Overview The Nexperia PBSS5350Z is a 50 V, 3 A PNP low VCEsat transistor designed for efficient power management. This transistor offers a low collector-emitter saturation voltage (VCEsat), high collector current capability, and high current gain (hFE) at high collector currents, leading to reduced heat generation and improved energy efficiency. It is ideal for applications such as DC/DC converters, supply line switching, battery chargers, LED backlighting, linear

Product OverviewThe MMBT5401 is a PNP bipolar transistor in a SOT-23 plastic-encapsulated package. It is complementary to the MMBT5551 and is ideal for medium power amplification and switching applications.Product AttributesBrand: MicrodiodePackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitCollector-Base VoltageVCBO-160VCollector-Emitter VoltageVCEO-160VEmitter-Base VoltageVEBO-5VCollector CurrentIC-0.6ACollector Power DissipationPC(Ta=25)0

Product Overview The MINOS NJW0302G is a PNP Epitaxial Type Power Transistor designed for high-fidelity audio frequency amplifier output stages. It is recommended for 100-W applications and offers a complementary pairing with the NJW0281G. Key features include a high collector voltage of -230V (min). Product Attributes Brand: MINOS Type: PNP Epitaxial Type Power Amplifier Technical Specifications Symbol Parameter Rating Unit VCBO Collector-base voltage -230 V VCEO Collector

Nexperia BCP68; BC868; BC68PA NPN Medium Power Transistors Product Overview The Nexperia BCP68, BC868, and BC68PA series are NPN medium power transistors designed for surface-mounted devices (SMD) in plastic packages. These transistors offer high current capabilities, multiple current gain selections, and high power dissipation. Key features include an exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) and a leadless, very small SMD plastic

Product Overview The Minos Silicon NPN Triple Diffusion Type Power Amplifier is designed for high-voltage applications. It is complementary to the 2SA1837 and features a high collector voltage of 230V (min). This power amplifier is suitable for various electronic circuits requiring robust performance and reliability. Product Attributes Brand: Minos Silicon Type: NPN Triple Diffusion Type Power Amplifier Package: TO-220F Technical Specifications Symbol Parameter Rating Unit