Single Bipolar Transistors

Product Overview The Nexperia BC806H series comprises PNP general-purpose transistors housed in a compact SOT23 (TO-236AB) surface-mounted plastic package. These transistors offer high current and high voltage capabilities, with two current gain selections available. Designed for high-temperature applications up to 175 C and AEC-Q101 qualified, they are suitable for general-purpose switching and amplification, including 48 V automotive board net applications. Product

Product Overview The NPN Darlington Transistor is a semiconductor device designed for general-purpose applications. It offers high current gain and is suitable for various switching and amplification tasks within its specified operating limits. Key applications include power control and signal amplification where a high-gain transistor is required. Product Attributes Brand: MNS (Shenzhen Minos) Origin: China (Shenzhen) Technical Specifications Parameter Symbol Description Min

2410121812_Nexperia-BCM847BS-135_C549556.pdf

Nexperia BC817W Series: 45 V, 500 mA NPN General-Purpose Transistors Product Overview The Nexperia BC817W series comprises NPN general-purpose transistors designed for versatile switching and amplification applications. These transistors are housed in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package, offering high current capability and multiple current gain selections. They are ideal for general-purpose electronic circuits requiring reliable

Product OverviewThe DTC114YCA is an NPN transistor from Niuhang Specification Electronic Co. Ltd, designed for various electronic applications. It features a SOT-23 package and is suitable for general-purpose use.Product AttributesBrand: Niuhang Specification Electronic Co. LtdPackage: SOT-23Epoxy UL Rating: 94V-0Mounting Position: AnyWeight: approx. 0.01gTechnical SpecificationsSymbolCharacteristicTest ConditionMin.Typ.Max.UnitVCCSupply Voltage--50VVINInput Voltage-6~+40-

Product Overview The MJD44H11 is an NPN high power bipolar transistor designed for surface-mounted applications. It features a high thermal power dissipation capability and high energy efficiency due to reduced heat generation. This transistor offers a low collector-emitter saturation voltage and fast switching speeds, making it electrically similar to the popular MJD44H series. It is suitable for various power management applications, including load switching, linear mode

PBSS2515YPN: 15 V Low VCEsat NPN/PNP Transistor Product Overview The PBSS2515YPN is a low VCEsat NPN/PNP transistor pair designed for general-purpose switching and driver circuits. This device offers high current capability and a low collector-emitter saturation voltage, providing significant advantages in terms of reduced PCB area and lower pick-and-place costs by replacing two discrete SC-70 packaged transistors. Its compact SOT363 (SC-88) SMD plastic package makes it ideal

Product Overview The BC849W and BC850W are NPN general purpose transistors designed for low current (max. 100 mA) and low voltage (max. 45 V) applications. They are particularly suitable for low noise stages in tape recorders, hi-fi amplifiers, and other audio-frequency equipment. These transistors are housed in a SOT323 plastic package. PNP complements include the BC859W and BC860W. Product Attributes Brand: Nexperia (formerly NXP Semiconductors) Package Type: SOT323

Product Overview The Nexperia PBSS5140T is a 40 V, 1 A PNP low VCEsat transistor designed for general-purpose switching and muting applications. It offers a low collector-emitter saturation voltage (VCEsat), high collector current capability (IC and ICM), and high collector current gain (hFE) at high IC, contributing to high efficiency through reduced heat generation. This transistor is AEC-Q101 qualified, making it suitable for automotive applications. Key applications

Product Overview This power transistor is designed for power amplification, TV sound output, and frame output applications. It is complementary to the C2073. Key features include high voltage ratings and significant power dissipation capabilities, making it suitable for demanding electronic circuits. Product Attributes Brand: MNS (Shenzhen Minos Technology Co., Ltd.) Complementary Part: C2073 Origin: Shenzhen, China Technical Specifications Parameter Symbol Symbol Description

Product OverviewThe S8050-H is an NPN low frequency power amplifier from Niuhang Specification Electronic Co. Ltd. It is suitable for the driver stage of small motors and is available in a SOT-23 package. The device has a UL 94V-0 epoxy rating and can be mounted in any position.Product AttributesBrand: NiuhangOrigin: China (implied by company name)Material: Epoxy (UL: 94V-0)Certifications: UL 94V-0Technical SpecificationsSymbolCharacteristicTest ConditionMin.Typ.Max

2410010331_Nexperia-BC846B-215_C87062.pdf

Product Overview The Nexperia PBSS5350X is a 50 V, 3 A PNP low VCEsat transistor designed for power management applications. It offers high collector current capability, enhanced efficiency leading to reduced heat generation, and smaller printed-circuit board requirements. This AEC-Q101 qualified transistor is suitable for various applications including DC/DC converters, supply line switching, battery chargers, LCD backlighting, peripheral drivers, and inductive load drivers

Product Overview The Nexperia PDTC114ET-Q is an NPN Resistor-Equipped Transistor (RET) in a compact SOT23 SMD plastic package. Designed for digital applications in automotive and industrial segments, this transistor offers a 100 mA output current capability and features built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick and place costs. It is qualified according to AEC-Q101 and recommended for automotive applications, serving as a

Nexperia PBSS306NZ: 100 V, 5.1 A NPN Low VCEsat (BISS) Transistor The Nexperia PBSS306NZ is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor housed in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. This transistor offers a low collector-emitter saturation voltage (VCEsat), high collector current capability (IC and ICM), and high collector current gain (hFE) at high IC. Its design contributes to high efficiency through reduced heat

Product Overview The Nexperia MMBT3904 is a high-performance NPN switching transistor designed for general switching and amplification applications. Housed in a compact SOT23 Surface-Mounted Device (SMD) plastic package, this AEC-Q101 qualified component offers a collector current capability of up to 200 mA and a collector-emitter voltage of 40 V. Its PNP complement is the MMBT3906. Product Attributes Brand: Nexperia Type: NPN Switching Transistor Package Type: SOT23

Product Overview The Nexperia PBSS4230T is an NPN BISS transistor in a SOT23 package, designed for applications requiring ultra-low collector-emitter saturation voltage (VCEsat) and equivalent on-resistance (RCEsat). It offers high collector current capability, leading to increased efficiency and reduced heat generation. This makes it a cost-effective alternative to MOSFETs in specific applications. Key applications include power management (DC/DC conversion, supply line

Product Overview The Nexperia BC847DS is a general-purpose NPN/NPN transistor pair housed in a compact SOT457 (SC-74) SMD plastic package. Designed for switching and amplification applications, this transistor pair offers low collector capacitance and low collector-emitter saturation voltage. Its closely matched current gain, coupled with the absence of mutual interference between transistors, allows for component count reduction and board space savings. The BC847DS is AEC

Product Overview The Nexperia BC817 series are NPN general-purpose transistors designed for versatile applications. These transistors are housed in a compact SOT23 (TO-236AB) surface-mounted plastic package, making them suitable for space-constrained designs. They offer high current capabilities and come with three distinct current gain selections, providing flexibility for various design needs. The BC817 series is ideal for general-purpose switching and amplification tasks.

Product Overview This PNP Silicon Transistor is a Darlington transistor with an integrated damping diode, designed for high-gain circuits. It is suitable for applications requiring high amplification. Product Attributes Brand: MNS Type: PNP Silicon Transistor (Darlington) Integrated Component: Damping Diode Technical Specifications Parameter Symbol Description Min Typical Max Unit Test Condition Absolute Maximum Ratings (Ta=25) Storage Temperature Tstg -65 150 Junction