Single Bipolar Transistors
Medium power amplification switching transistor NH MMBT2907A with UL 94V-0 epoxy casing in SOT-23 package
MMBT2907A PNP TRANSISTORIdeal for medium power amplification and switching applications. This PNP transistor comes in a compact SOT-23 package, suitable for various electronic designs. It features a UL 94V-0 rated epoxy casing and can be mounted in any position.Product AttributesBrand: Niuhang Specification Electronic Co. LtdPackage: SOT-23Epoxy UL Rating: 94V-0Mounting Position: AnyWeight: approx. 0.01gTechnical SpecificationsCharacteristicSymbolTest ConditionMin.Typ.Max
High Current NPN Transistor Nexperia BC817-40-QR in Small SOT23 Package for Automotive Electronics
Product Overview The Nexperia BC817-Q series are NPN general-purpose transistors designed for switching and amplification applications. These transistors are housed in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. They offer high current capability and are available with three distinct current gain selections. Qualified according to AEC-Q101, these transistors are recommended for use in automotive applications. Product Attributes Brand: Nexperia
High Collector Voltage Minos 2SA1943 Transistor Suitable for Audio Frequency Amplifier Output Stage
Product Overview The Minos High Power NPN Transistor, model 2SA1943, is designed for high-performance power amplifier applications. It features a high collector voltage (VCEO = 230V min) and is recommended for the output stage of 100-W high-fidelity audio frequency amplifiers. This transistor is complementary to the 2SC5200 model. Product Attributes Brand: MINOS Product Code: 2SA1943 Complementary to: 2SC5200 Technical Specifications Characteristics Symbol Rating Unit Test
power transistor Nexperia PBSS303PX115 30 volt 5.1 amp PNP low VCEsat for compact electronic designs
Product Overview The Nexperia PBSS303PX is a 30 V, 5.1 A PNP low VCEsat transistor designed for surface-mounted applications. It offers a low collector-emitter saturation voltage (VCEsat), high collector current capability (IC and ICM), and high collector current gain (hFE) at high IC. These features contribute to high efficiency with less heat generation and a smaller PCB area requirement compared to conventional transistors. The PBSS303PX is AEC-Q101 qualified, making it
Power Amplification Darlington Transistor Minos MJD127 Featuring Internal Damping Diode For Circuit
Product Overview This Darlington transistor is designed for high-gain circuits and includes an internal damping diode. It is suitable for applications requiring significant amplification. Product Attributes Brand: MNS (implied from www.mns-kx.com) Origin: Shenzhen, China (implied from contact information) Technical Specifications Parameter Symbol Description Min Typical Max Unit Test Conditions Collector-Base Breakdown Voltage BVCBO -100 V IC=-1mA, IE=0 Collector-Emitter
Nexperia PBSS4140T 215 NPN transistor 40V 1A low VCEsat in SOT23 package for general purpose switching
Product Overview The Nexperia PBSS4140T is a 40 V, 1 A NPN low VCEsat (BISS) transistor housed in a compact SOT23 plastic package. Designed for general-purpose switching and muting, it offers high current capabilities and improved device reliability due to reduced heat generation. Its applications include LCD backlighting, supply line switching circuits, and battery-driven equipment such as mobile phones, video cameras, and hand-held devices. The PNP complement is the
Nexperia PBSS8110T 215 Low VCEsat NPN Transistor for Power Management and Inductive Load Driving
Product Overview The Nexperia PBSS8110T is an NPN low VCEsat transistor housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It offers a low collector-emitter saturation voltage (VCEsat) and high collector current capability, making it suitable for various demanding applications. Key application segments include automotive 42 V power systems, telecom infrastructure, industrial power management, DC/DC converters, supply line switching, battery
30 Volt 3 Amp NPN Transistor Nexperia PBSS4330X135 Low VCEsat Suitable for Battery Chargers and More
Product Overview The Nexperia PBSS4330X is a 30 V, 3 A NPN low VCEsat (BISS) transistor designed for efficient power management and peripheral driving applications. It features a low collector-emitter saturation voltage (VCEsat), high collector current capability, and reduced heat generation, leading to improved efficiency and smaller printed-circuit board requirements. Ideal for DC/DC converters, supply line switching, battery chargers, LCD backlighting, and driving
NPN switching transistor Nexperia PMBT3904 215 with 40 volt collector emitter voltage in compact SOT23
Nexperia PMBT3904: 40 V, 200 mA NPN Switching Transistor Product Overview The Nexperia PMBT3904 is an NPN switching transistor designed for general switching and amplification applications. Encased in a compact SOT23 surface-mounted device (SMD) plastic package, this transistor offers a collector current capability of up to 200 mA and a collector-emitter voltage of 40 V. It is AEC-Q101 qualified, making it suitable for automotive applications. Its PNP complement is the
switching and amplification transistor Nexperia BC817DS115 NPN NPN general purpose double transistor
Product Overview The Nexperia BC817DS is an NPN/NPN general-purpose double transistor designed for switching and amplification applications. This device offers reduced component count and pick and place costs, making it an efficient choice for various electronic designs. It is AEC-Q101 qualified, ensuring suitability for automotive applications. Product Attributes Brand: Nexperia Product Type: NPN/NPN general purpose double transistors Complementary PNP/PNP: BC807DS
Silicon Bipolar Epitaxial Planar NPN PNP Paired Transistor Minos MJL21196 for Audio Power Amplifiers
Product Overview This is a silicon bipolar epitaxial planar NPN-PNP paired power amplifier transistor designed for high-fidelity audio applications. It offers a large collector current of Ic=16A and a high collector-emitter voltage of VCEO250V. The transistor features a wide safe operating area (3.2A/80V @ 1 Second) and excellent frequency characteristics with fT > 20MHz. It is suitable for the output stage of high-fidelity audio amplifiers exceeding 100W. The device is
Audio Power Amplification Applications Using Minos MJE2955T PNP Power Transistor with TO220 Package
Product Overview The MJE2955T is a PNP power transistor designed for audio power amplification. It offers robust performance with specific electrical characteristics and absolute maximum ratings crucial for reliable circuit design. This device is suitable for applications requiring audio power amplification. Product Attributes Brand: MNS (implied from www.mns-kx.com) Model: MJE2955T Package Type: TO-220 Technical Specifications Parameter Symbol Description Minimum Typical
Nexperia BC847BV 115 NPN transistor designed for switching applications in small form factor package
Product Overview The Nexperia BC847BV is an NPN general-purpose double transistor designed for switching and amplification applications. Housed in an ultra-small SOT666 flat lead plastic package, this transistor offers a total power dissipation of 300 mW and features very low collector capacitance. Its straight leads ensure excellent coplanarity and improved thermal behavior, reducing the need for multiple components and saving board space. The BC847BV is the PNP complement
NPN PNP transistor Nexperia BC847QAPNZ designed for mobile device applications in compact DFN1010B 6
Product Overview The Nexperia BC847QAPN is a general-purpose NPN/PNP transistor designed for switching and amplification applications, particularly in mobile devices. This AEC-Q101 qualified component is housed in an ultra-small, leadless DFN1010B-6 (SOT1216) plastic package, offering a low profile of 0.37 mm. Its design contributes to reduced component count and lower pick-and-place costs in manufacturing. Product Attributes Brand: Nexperia Certifications: AEC-Q101 qualified
General purpose PNP transistor Nexperia BC807DS115 with low component count and AECQ101 certification
Product Overview The Nexperia BC807DS is a PNP/PNP general-purpose double transistor designed for switching and amplification applications. This AEC-Q101 qualified component offers reduced component count and lower pick-and-place costs, making it suitable for automotive applications. It is available in an SOT457 (SC-74) plastic package. Product Attributes Brand: Nexperia Product Type: PNP/PNP general purpose double transistors Complementary NPN/NPN: BC817DS Complementary NPN
NPN transistor NH S9014 with 0.1A collector current and 45V collector emitter voltage in compact SOT23 package
Product OverviewThe S9014 is an NPN transistor manufactured by Niuhang Specification Electronic Co. Ltd. It is designed for general-purpose applications and offers a collector current of 0.1A and a collector-emitter voltage of 45V. The device is packaged in a SOT-23 package, making it suitable for various electronic circuits.Product AttributesBrand: Niuhang Specification Electronic Co. LtdPackage: SOT-23Epoxy UL Rating: 94V-0Mounting Position: AnyWeight: approx. 0.01gTechnica
Power transistor Minos 2SC5200 designed for operation in high fidelity audio amplifier output stages
Product Overview The Minos High Power Products NPN Transistor, model 2SC5200, is designed for power amplifier applications, particularly recommended for the output stage of 100-W high-fidelity audio frequency amplifiers. It offers a high collector voltage of 230V (min) and is complementary to the 2SA1943 transistor. While operating within absolute maximum ratings, continuous use under heavy loads such as high temperature, current, or voltage, or significant temperature
NPN transistor NH NH491 with 1 amp collector current and 500 milliwatt power dissipation in compact SOT23 package
Product OverviewThe NH491 is an NPN transistor from Niuhang Specification Electronic Co. Ltd, designed for general-purpose applications. It offers a collector current of 1.0A and can dissipate up to 500mW of power. The device operates within a wide temperature range of -55 to 150 and is housed in a compact SOT-23 package.Product AttributesBrand: Niuhang Specification Electronic Co. LtdPackage Type: SOT-23Epoxy UL Rating: 94V-0Mounting Position: AnyWeight: approx. 0.01gTechnic
PNP matched double transistors Nexperia BCM857DS 135 for in wearable consumer and computing devices
Product Overview The Nexperia BCM857 series comprises PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. These fully isolated internal transistors offer excellent current gain (hFE) and base-emitter voltage (VBE) matching, making them ideal for applications such as current mirrors and differential amplifiers. They serve as direct replacements for standard double transistors. Product Attributes Brand: Nexperia Product Type: PNP/PNP
High voltage PNP epitaxial transistor Minos 2SA1837 designed for power amplifier circuits and operation
Product Overview The Minos Silicon PNP Epitaxial Type Power Amplifier is designed for high-performance amplification applications. It offers a complementary pairing with the 2SC4793 and boasts a high collector voltage of -230V (min). This component is suitable for various power amplifier circuits where reliability and robust voltage handling are critical. Continuous operation under heavy loads, including high temperature, current, or voltage, may significantly reduce product