Single Bipolar Transistors
Silicon PNP Transistor ISC 2SA1744 Ideal for in DC DC Converters and High Speed Switching Circuits
Product OverviewThe ISC 2SA1744 is a Silicon PNP Power Transistor designed for high-speed switching applications. It features high DC current gain (hFE) at low saturation voltage (VCE(sat)), making it ideal for use as a driver in DC/DC converters and actuators. Its robust performance and reliable operation are further enhanced by minimum lot-to-lot variations.Product AttributesBrand: ISCTrademark: ISC & ISCsemiOrigin: SiliconMaterial: SiliconTechnical SpecificationsParameterS
Silicon NPN Power Transistor ISC 2SC3866 Designed for High Frequency Inverters and Power Amplifiers
Product OverviewThe 2SC3866 is a Silicon NPN Power Transistor from ISC, designed for high-voltage applications. It features a high breakdown voltage of 900V (V(BR)CBO), high switching speed, and high reliability with minimum lot-to-lot variations. This transistor is suitable for switching regulators, ultrasonic generators, high-frequency inverters, and general-purpose power amplifiers.Product AttributesBrand: ISCTrademark: ISC & ISCsemiMaterial: SiliconType: NPN Power
Silicon NPN Power Transistor ISC BU508AF with High Collector Emitter Voltage and Operation Features
Product OverviewThe ISC BU508AF is a Silicon NPN Power Transistor designed for high-voltage applications. It features a high collector-emitter sustaining voltage of 700V (Min) and high switching speed, making it suitable for horizontal deflection circuits in color TV receivers. The device offers minimum lot-to-lot variations for robust performance and reliable operation.Product AttributesBrand: ISCTrademark: ISC & ISCsemiOrigin: SiliconMaterial: SiliconTechnical Specification
Power Transistor ISC 2SD1899 Silicon NPN Type with 60V Collector Base Voltage and Stable Performance
ISC Silicon NPN Power Transistor 2SD1899The ISC 2SD1899 is a Silicon NPN Power Transistor designed for high transition frequency applications. It features low collector saturation voltage and is 100% avalanche tested, ensuring robust device performance and reliable operation with minimum lot-to-lot variations.Product AttributesBrand: ISCTrademark: ISC & ISCsemiOrigin: SiliconType: NPN Power TransistorTechnical SpecificationsParameterSymbolValueUnitConditionsCollector-Base
Jilin Sino Microelectronics 3DD13005ED 220HF NPN transistor fast switching high voltage for power amplifier
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13005EDThe 3DD13005ED is a high voltage, fast-switching NPN power transistor designed for various power electronics applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, high-frequency power transformation, and general power amplifier circuits. This product
RoHS compliant Jilin Sino Microelectronics 3DD13009K O C N B transistor for energy saving lamp applications
Product OverviewThe 3DD13009K is a high voltage, fast-switching NPN power transistor designed for various power electronics applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for energy-saving lamps, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This RoHS-compliant product ensures high reliability and environmental friendliness.Product AttributesBrand:
Low noise bipolar RF transistor Infineon BFP760H6327 silicon germanium type for RF device integration
Product OverviewThe BFP760 is a low-noise silicon germanium bipolar RF transistor designed for high-frequency applications. It offers excellent performance characteristics suitable for various RF and protection device applications.Product AttributesBrand: Infineon Technologies AGMaterial: Silicon Germanium (SiGe)Package: SOT343Technical SpecificationsParameterSymbolMinTypMaxUnitConditionsPageCollector Current vs. Collector Emitter VoltageIC = f (VCE)IB = Parameter in A15DC
power semiconductor device Jilin Sino-Microelectronics 3DD4251T with high breakdown voltage and current capability
Product OverviewThe 3DD4251T is a high-performance semiconductor device designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lamps, electronic ballasts, high-frequency switching power supplies, high-frequency power transforms, and general power amplifier circuits. This product is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectronics Co.
Silicon NPN Power Transistor ISC 2SD1402 Offering High Switching Speed and 1500V Breakdown Voltage
Product OverviewThe ISC 2SD1402 is a Silicon NPN Power Transistor designed for color TV horizontal output applications. It features a high breakdown voltage of 1500V (Min), high switching speed, and minimum lot-to-lot variations for robust device performance and reliable operation.Product AttributesBrand: ISCTrademark: ISC & ISCsemiMaterial: SiliconType: NPN Power TransistorModel: 2SD1402Technical SpecificationsParameterSymbolConditionsMinTyp.MaxUnitCollector-Base Breakdown
Infineon BFP 450 H6327 RF transistor designed to improve system sensitivity and signal to noise ratio
Infineon RF Transistors - 7th and 8th GenerationInfineon's 7th and 8th generation RF transistors are advanced discrete Heterojunction Bipolar Transistors (HBT) designed for high-performance wireless connectivity applications. Leveraging Silicon-Germanium:Carbide (SiGe:C) technology, these transistors offer exceptional RF performance, superior signal quality, and robust reliability. They are ideal for use as Low-Noise Amplifiers (LNAs) in WiFi connectivity, enabling enhanced
Low Noise Silicon Germanium Bipolar RF Transistor Infineon BFP740E6327 for RF Communication Systems
BFP740 Low Noise Silicon Germanium Bipolar RF TransistorThe BFP740 is a low noise silicon germanium bipolar RF transistor designed for various RF applications. It offers excellent performance characteristics, making it suitable for circuit designers requiring high performance in RF circuits.Product AttributesBrand: Infineon Technologies AGMaterial: Silicon Germanium (SiGe)Package: SOT343Technical SpecificationsParameterValueConditionsUnitProduct NameBFP740Device TypeLow Noise
wireless communication solutions featuring Infineon BFR 380L3 E6327 RF transistor for mobile systems
Infineon RF TransistorsInfineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. Designed for increasing data traffic and connectivity demands in mobile systems and infrastructure, these transistors provide superior performance, versatility, and supply security. They are crucial for enabling stable and reliable wireless reception and transmission across multiple bands, supporting applications like small cells, automotive
Power Transistor ISC MJ2955 Silicon PNP Type Offering Operation and Low Saturation Voltage for Circuits
Product OverviewThe ISC MJ2955 is a Silicon PNP Power Transistor designed for general-purpose switching and amplifier applications. It offers an excellent Safe Operating Area, a DC Current Gain (hFE) of 20-70 @ IC=-4A, and a Collector-Emitter Saturation Voltage (VCE(sat)) of -1.1V (Max) @ IC=-4A. This transistor is a complement to the 2N3055 type, ensuring robust device performance and reliable operation with minimum lot-to-lot variations.Product AttributesBrand: ISCTrademark
Wideband silicon npn rf transistor Infineon BFP420H6327 ideal for oscillators up to 10 ghz frequency
BFP420 Surface Mount Wideband Silicon NPN RF Bipolar TransistorThe BFP420 is a low noise, grounded emitter (SIEGET) silicon NPN RF bipolar transistor from Infineon's fourth generation RF transistor family. With a transition frequency fT of 25 GHz, it offers high gain and low current characteristics, making it suitable for oscillators up to 10 GHz. This device provides cost competitiveness and ease of use for various RF applications.Product AttributesBrand: InfineonMaterial:
high voltage transistor Jilin Sino Microelectronics 3DD4613H 92 FJ suitable for chargers and ballasts
Product Overview The 3DD4613H is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for chargers, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant. Product Attributes Brand: Jilin Sino-microelectronics Co., Ltd Certifications:
Power transistor Jilin Sino Microelectronics 3DD4243DT 92 with high switching speed and breakdown voltage
Product OverviewThe 3DD4243D is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectronics Co., Ltd.Certifications:
High gain broadband amplifier transistor Infineon BFP183WH6327XTSA1 low noise silicon bipolar device
Product OverviewThe BFP183W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents from 2 mA to 30 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This device is Pb-free (RoHS compliant) and halogen-free, with qualification reports available according to AEC-Q101. It is an ESD-sensitive device and requires careful handling.Product AttributesBrand:
Silicon AF Transistor Infineon BCP5616H6327 NPN Type with Low Collector Emitter Saturation Voltage
BCP54...-BCP56... NPN Silicon AF TransistorsThese NPN Silicon AF Transistors are designed for AF driver and output stages. They offer high collector current and low collector-emitter saturation voltage. Complementary PNP types are available as BCP51...BCP53. The components are Pb-free and RoHS compliant, qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101Package: SOT223Compliance: Pb-free (RoHS compliant
Silicon bipolar transistor Infineon BFR 181W H6327 low noise figure designed for broadband rf amplifier
Product OverviewThe BFR181W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It is suitable for collector currents ranging from 0.5 mA to 12 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This transistor is provided in an industry-standard, easy-to-use, Pb-free (RoHS compliant) and halogen-free package with visible leads. Qualification reports according to AEC-Q101 are
Silicon PNP Transistor Array Infineon BC856S E6433 with Low Saturation Voltage and High Current Gain
Product OverviewThe BC856S/U and BC857S are PNP Silicon AF Transistor Arrays designed for AF input stages and driver applications. They offer high current gain, low collector-emitter saturation voltage, and feature two internally isolated transistors with good matching in a single package. These devices are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101, Pb-free (RoHS
