Single Bipolar Transistors
NPN Transistor Infineon MMBT3904LT1HTSA1 Featuring Pb Free RoHS Compliance and AEC Q101 Certification
Product OverviewThe SMBT3904/MMBT3904 and SMBT3904S are NPN silicon switching transistors designed for high DC current gain from 0.1 mA to 100 mA. They feature a low collector-emitter saturation voltage and are Pb-free (RoHS compliant) and qualified according to AEC Q101. The SMBT3904S variant ...
Low noise figure RF transistor Infineon BFP196E6327HTSA1 designed for DECT PCN power amplifiers and broadband
Product OverviewThe BFP196 is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It is also suitable as a power amplifier for DECT and PCN systems. Key features include a high transition ...
Dual transistor low noise RF device Infineon BFS481H6327XTSA1 in Pb free halogen free SOT363 package
Product OverviewThe BFS481 is a low-noise silicon bipolar RF transistor designed for low-noise, high-gain broadband amplifiers. It features two internally isolated transistors in a single package, offering fT of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This device is suitable ...
Power Transistor Jilin Sino Microelectronics 3DD209L 3PB RoHS Compliant for High Frequency Circuits
Product OverviewThe 3DD209L is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching ...
Low Noise Silicon Germanium Bipolar RF Transistor Infineon BFP740FH6327 Suitable for RF Applications
BFP740F Low Noise Silicon Germanium Bipolar RF TransistorThe BFP740F is a low noise silicon germanium bipolar RF transistor designed for high-frequency applications. It offers excellent performance characteristics suitable for various RF circuits.Product AttributesBrand: Infineon TechnologiesMateria...
High gain broadband amplifier transistor Infineon BFR182E6327 silicon bipolar with low noise figure
Product OverviewThe BFR182 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It is suitable for collector currents ranging from 1 mA to 20 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This component ...
Silicon NPN Transistor Array Infineon BC846PNH6327 with High Current Gain and Low Saturation Voltage
Product OverviewThe BC846PN/UPN_BC847PN series are NPN/PNP Silicon AF Transistor Arrays designed for AF input stage and driver applications. They offer high current gain, low collector-emitter saturation voltage, and feature two internally isolated NPN/PNP transistors in a single package. These ...
NPN silicon germanium RF driver amplifier Infineon BFQ790H6327XTSA1 designed for broadcasting and test equipment
Product OverviewThe BFQ790 is a high-linearity, high-gain driver amplifier designed for RF applications. Built on NPN silicon germanium technology, it offers excellent performance characteristics suitable for commercial and industrial wireless infrastructure, ISM band amplifiers, automated test ...
High gain low noise silicon bipolar RF transistor Infineon BFP540FESDH6327XTSA1 with ESD protection
Product OverviewThe BFP540FESD is a low-noise silicon bipolar RF transistor designed for ESD-protected high-gain low-noise amplifiers. It offers excellent ESD performance with a typical value of 1000 V (HBM) and outstanding Gms of 20 dB with a minimum noise figure (NFmin) of 0.9 dB. This Pb-free, ...
NPN transistor Jilin Sino Microelectronics 3DD4243DY designed for high frequency switching power supplies
Product OverviewThe 3DD4243D is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high...
Low noise figure silicon bipolar RF transistor Infineon BFR182WH6327XTSA1 broadband amplifier device
Product OverviewThe BFR182W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates effectively at collector currents ranging from 1 mA to 20 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This ...
NPN transistor Jilin Sino Microelectronics 3DD13003A for power amplifier and switching power supplies
Product OverviewThe 3DD13003A is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for chargers, electronic ballasts, high-frequency switching power ...
Silicon bipolar RF transistor Infineon BFR193WH6327 optimized for linear broadband amplifier performance
Product OverviewThe BFR193W is a low-noise silicon bipolar RF transistor designed for high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This Pb-free (RoHS compliant) component is ...
Jilin Sino Microelectronics 3DD13007MD transistor offering high breakdown voltage for power electronics
Product OverviewThe 3DD13007MD is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, ...
Silicon bipolar RF transistor Infineon BFP193WH6327XTSA1 with 8 GHz transition frequency and low noise figure
Product OverviewThe BFP193W is a low-noise silicon bipolar RF transistor designed for high-gain and linear broadband amplifiers up to 2 GHz. It features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This Pb-free (RoHS compliant) component is available ...
Embedded Controller Infineon SAK-TC364DP-64F300F AA 32-Bit Single-Chip Microcontroller Technology
Infineon TC36x AA-Step 32-Bit Single-Chip Microcontroller The TC36x AA-Step is a 32-bit single-chip microcontroller designed for open market applications. It offers advanced features and robust performance for a wide range of embedded systems. Product Attributes Brand: Infineon Technologies AG ...
Jilin Sino Microelectronics 3DD4613H NPN transistor designed for various power amplifier applications
Product OverviewThe 3DD4613H is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for battery chargers, electronic ballasts, high...
RF transistor Infineon BFP 460 H6327 for wireless applications requiring stable and flexible performance
Infineon RF Transistors - 7th & 8th Generation Infineon's 7th and 8th generation RF transistors are discrete Heterojunction Bipolar Transistors (HBT) designed for complementary wireless solutions, offering robust, flexible, and reliable performance. These devices are crucial for enabling stable and ...
Silicon bipolar RF transistor Infineon BFP 193 E6327 featuring AEC Q101 qualification for broadband amplifier
Product OverviewThe BFP193 is a low-noise silicon bipolar RF transistor designed for high-gain and linear broadband amplifiers up to 2 GHz. It offers excellent performance with a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This component is Pb-free and ...
Silicon PNP Darlington Transistor ISC BD678 Featuring 60V Collector Emitter Breakdown Voltage and 750 Gain
Product OverviewThe ISC BD678 is a Silicon PNP Darlington Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a Collector-Emitter Breakdown Voltage of -60V and a minimum DC Current Gain (hFE) of 750 @ IC= -1.5 A. This transistor is a ...
