Single Bipolar Transistors
PNP transistor MMBT3906X with collector current of 200 milliamps and low maximum voltage of 40 volts
Product OverviewThe MMBT3906X is a PNP general-purpose transistor featuring epitaxial planar die construction. It offers complementary NPN type availability (MMBT3904), a collector current capability of -200mA, and a low maximum voltage of -40V. This transistor is ideal for medium power amplificatio...
Jilin Sino Microelectronics 3DD4242DT 92 transistor for energy saving lights and power supply circuits
Product OverviewThe 3DD4242D is a high-performance transistor designed for applications requiring high voltage and current capabilities. It features high breakdown voltage, high current capacity, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ...
Durable Silicon NPN Power Transistor ISC 2N3055 with Low Collector Emitter Saturation Voltage Rating
ISC 2N3055 Silicon NPN Power TransistorThe ISC 2N3055 is a Silicon NPN Power Transistor designed for general-purpose switching and amplifier applications. It offers excellent Safe Operating Area, a DC Current Gain (hFE) of 20-70 @ IC = 4A, and a Collector-Emitter Saturation Voltage (VCE(sat)) of 1.1 ...
Power Amplifier Silicon NPN Transistor ISC 2SC2073 Featuring 150V Collector Emitter Breakdown Voltage and Operation
Product OverviewThe ISC 2SC2073 is a Silicon NPN Power Transistor designed for power amplifier and vertical output applications. It features a wide area of safe operation, a collector-emitter breakdown voltage of 150V (Min), and serves as a complement to the 2SA940 type. The device offers minimum ...
NPN Power Transistor ISC 2SD2583 Featuring High DC Current Gain and Operation for Audio Frequency Amplifier
Product OverviewThe 2SD2583 is a Silicon NPN Power Transistor designed for audio frequency amplifier and switching applications. It features high collector current capability (IC= 5A), low saturation voltage (VCE(sat)= 0.15V Max @ IC=1A, IB= 50mA), and high DC current gain (hFE= 150~600 @ IC= 1A). ...
Fast switching power transistor Jilin Sino-Microelectronics 3DD13005ED-126S with high breakdown voltage and current
Product OverviewThe 3DD13005ED is a high-voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high...
High Voltage Silicon NPN Darlington Power Transistor ISC 2SD798 with 2 Volt Maximum Saturation Voltage
Product OverviewThe ISC 2SD798 is a Silicon NPN Darlington Power Transistor designed for high-voltage switching igniter applications. It features a high Collector-Emitter Sustaining Voltage of 300V(Min), a low Collector-Emitter Saturation Voltage of 2.0V(Max) @ IC=4A, and a high DC Current Gain of ...
High Collector Current Silicon NPN Power Transistor ISC 2SC2233 with 60V Collector Emitter Breakdown Voltage
Product OverviewThe INCHANGE Semiconductor 2SC2233 is a silicon NPN power transistor designed for high-performance applications. It features a high collector-emitter breakdown voltage of 60V(Min) and a DC current gain of 30(Min) at VCE=5V, IC=1A. This transistor offers high collector current ...
power transistor Jilin Sino Microelectronics 3DD13003E1D 92 FJ for electronic ballast and lighting
Product OverviewThe 3DD13003E1D is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, ...
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency switching power supplies
Product OverviewThe 3DD13003A is a high voltage, fast-switching NPN power transistor designed for various electronic applications including chargers, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. It offers high breakdown voltage, high current ...
Power transistor with middling voltage Jilin Sino-Microelectronics 3DD4128PL fast switching NPN device
MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR The 3DD4128PL is a high-reliability NPN power transistor designed for applications requiring middling breakdown voltage, high current capability, and fast switching speeds. It is suitable for energy-saving lights, electronic ballasts, electronic ...
Silicon NPN Darlington Power Transistor ISC 2SD1415A with 100V Breakdown Voltage and High Current Gain
Product OverviewThe 2SD1415A is a Silicon NPN Darlington Power Transistor from ISC. It is designed for high power switching applications, including hammer driver and pulse motor driver applications. Key features include a high Collector-Emitter Breakdown Voltage of 100V(Min), a low Collector-Emitter ...
PNP Power Transistor ISC 2SA1494 Featuring High Voltage and Linear DC Current Gain for General Purpose
Product OverviewThe INCHANGE Semiconductor 2SA1494 is a silicon PNP power transistor designed for audio and general-purpose applications. It features a high Collector-Emitter Breakdown Voltage of -200V(Min) and good linearity of hFE, making it a complementary type to the 2SC3858.Product AttributesBr...
Industrial Silicon PNP Darlington Transistor ISC FW26025A1 Featuring High Current Gain and Operation
Product OverviewThe ISC FW26025A1 is a Silicon PNP Darlington Power Transistor designed for linear and switching industrial equipment. It offers high DC current gain (hFE = 5000(Min)@ IC= -2A) and a Collector-Emitter Sustaining Voltage of -100V(Min). The device features minimum lot-to-lot variations ...
NPN transistor Jilin Sino Microelectronics 3DD4243DM 126 designed for high current and voltage electronic applications
Product OverviewThe 3DD4243D is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers high breakdown voltage, high current capability, and high switching speed, making it suitable for energy-saving lamps, electronic ballasts, high-frequency ...
7A Collector Current Silicon NPN Power Transistor ISC 2SD1163 with 120V Collector Emitter Breakdown Voltage
Product OverviewThe ISC 2SD1163 is a Silicon NPN Power Transistor designed for TV horizontal deflection applications. It offers a high Collector Current of 7A and a Collector-Emitter Breakdown Voltage of 120V (Min.), ensuring robust device performance and reliable operation with minimum lot-to-lot ...
Power Amplifier and Driver Stage Silicon PNP Transistor ISC 2SA1837 with High Current Gain Bandwidth
Product OverviewThe INCHANGE Semiconductor 2SA1837 is a Silicon PNP Power Transistor designed for power amplifier and driver stage amplifier applications. It features a high current-gain bandwidth product and is a complement to the 2SC4793 type. The device offers robust performance and reliable ...
Silicon NPN Power Transistor ISC 2SD1047 Designed for High Current and Audio Frequency Amplifier Output Stages
Product OverviewThe ISC 2SD1047 is a Silicon NPN Power Transistor designed for high-current applications. It features a high collector-emitter breakdown voltage of 140V, good linearity of hFE, and a wide area of safe operation. This transistor is recommended for 60W audio frequency amplifier output ...
Fast switching power transistor Jilin Sino Microelectronics 3DD13005MD220 for energy saving lighting
Product OverviewThe 3DD13005MD is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high...
Power Transistor ISC 2N6036 Silicon PNP Darlington for Amplifier and Low Speed Switching Applications
Product OverviewThe 2N6036 is a Silicon PNP Darlington Power Transistor designed for general-purpose amplifier and low-speed switching applications. It offers a high DC Current Gain (hFE) of 750(Min) @ IC= -2A and a Collector-Emitter Sustaining Voltage of VCEO(SUS) = -80V(Min.). This device is a ...
