Single Bipolar Transistors
Power Transistor ISC 2SA940 Silicon PNP Type Designed for Amplifier and Vertical Output Applications
ISC Silicon PNP Power Transistor 2SA940The 2SA940 is a PNP power transistor designed for general-purpose power amplifier and vertical output applications. It offers a high collector-emitter breakdown voltage of -150V and a DC current gain ranging from 40 to 140 at -0.5A. This transistor is a ...
Jilin Sino Microelectronics 3DD4617HZ NPN power transistor fast switching high voltage for electronic
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD4617H The 3DD4617H is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers robust performance with high voltage and current capabilities. Product Attributes Brand: Jilin Sino-microelectronics ...
Low noise silicon bipolar RF transistor Infineon BFR193E6327HTSA1 suitable for high gain amplifiers up to 2 GHz
Product OverviewThe BFR193 is a low-noise silicon bipolar RF transistor designed for high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It offers a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This device is Pb-free (RoHS compliant) and has ...
Pb free RoHS compliant Infineon BFR106E6327 transistor in SOT23 package for RF and VHF applications
Product OverviewThe BFR106 is a low-noise silicon bipolar RF transistor designed for UHF/VHF applications. It offers high linearity with 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, making it suitable as a driver for multistage amplifiers and for linear broadband and antenna amplifiers. The collector ...
NPN Silicon RF Transistor Infineon BFS 17W H6327 for Broadband Amplifiers up to 1 GHz Collector Current 20 mA
Product OverviewThe BFS17W is a NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz. It operates at collector currents ranging from 1 mA to 20 mA and comes in a Pb-free (RoHS compliant) package. This device is ESD sensitive and requires careful handling.Product AttributesBrand: ...
General purpose NPN transistor Infineon MMBTA 06 LT1 with environmentally friendly Pb free packaging
Product OverviewThe MMBTA05LT1 and MMBTA06LT1 are NPN silicon driver transistors designed for general-purpose applications. They are available in Pb-Free packages, offering an environmentally conscious choice. These devices are suitable for various driving applications where reliable NPN transistor ...
Silicon NPN Power Transistor ISC 2SC4793 Designed for Power Amplifier and Driver Stage Applications
Product OverviewThe 2SC4793 is a Silicon NPN Power Transistor from ISC, featuring a high Collector-Emitter Breakdown Voltage of 230V (Min) and a high Current-Gain Bandwidth Product. It is designed as a complement to the 2SA1837 and offers minimum lot-to-lot variations for robust device performance. ...
SiGe C Technology Infineon BFP 650F H6327 NPN RF Bipolar Transistor for Oscillator and RF Applications
Product OverviewThe BFP650F is a low-profile NPN RF bipolar transistor built on SiGe:C technology, belonging to Infineon's sixth-generation transistor family. It offers a high transition frequency (fT) of 42 GHz and excellent linearity, making it suitable for oscillator applications. This device ...
Silicon bipolar RF transistor Infineon BFP 181 E7764 optimized for broadband low noise amplification
Product OverviewThe BFP181 is a low-noise silicon bipolar RF transistor designed for low-noise, high-gain broadband amplifiers. It operates at collector currents from 0.5 mA to 12 mA and features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This Pb...
NPN Silicon Power Transistor ISC 2N4923 Offering Minimum Lot to Lot Variations for Circuit Operation
ISC Silicon NPN Power Transistor 2N4923The ISC 2N4923 is a Silicon NPN Power Transistor designed for driver circuits, switching, and amplifier applications. It features a Collector-Emitter Sustaining Voltage of 80V (Min), a low Collector Saturation Voltage of 0.6V (Max.) at IC=1A, and a wide Area of ...
Power Amplifier Silicon PNP Transistor ISC 2SA1869 with Collector Emitter Breakdown Voltage and Operation
Product OverviewThe 2SA1869 is a Silicon PNP Power Transistor from ISC, designed for power amplifier applications. It features a collector-emitter breakdown voltage of -50V, good linearity of hFE, and is a complement to type 2SC4935. Its robust device performance and reliable operation are ensured ...
High Voltage NPN Transistor Infineon SMBTA42E6327 Featuring Low Collector Emitter Saturation Voltage
Product OverviewThe SMBTA42/MMBTA42 are NPN Silicon High-Voltage Transistors designed for various applications. They offer a low collector-emitter saturation voltage and are Pb-free (RoHS compliant). Complementary PNP types, SMBTA92/MMBTA92, are also available. These transistors are qualified ...
Silicon bipolar RF transistor Infineon BFQ19SH6327 optimized for antenna systems and broadband amplifier
Product OverviewThe BFQ19S is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers. It is suitable for antenna and telecommunications systems operating up to 1.5 GHz with collector currents ranging from 10 mA to 70 mA. This transistor is Pb-free and ...
Silicon NPN Darlington Transistor ISC 2N6039 with 80 Volt Collector Emitter Sustaining Voltage Rating
Product OverviewThe ISC 2N6039 is a Silicon NPN Darlington Power Transistor designed for general-purpose switching and amplifier applications. It features a high DC current gain of 750(Min)@IC=2A and a Collector-Emitter Sustaining Voltage of 80V(Min). It is a complement to the 2N6036 type.Product ...
MT200 Package Silicon NPN Power Transistor ISC 2SC3858 Designed for Audio and General Purpose Circuits
Product OverviewThe Inchange Semiconductor 2SC3858 is a Silicon NPN Power Transistor designed for audio and general-purpose applications. It features the MT-200 package and is a complement to the 2SA1494 type.Product AttributesBrand: Inchange SemiconductorProduct Type: Silicon NPN Power TransistorPa...
Low noise silicon bipolar RF transistor Infineon BFR92PE6327 suitable for broadband amplifiers up to 2 GHz
Product OverviewThe BFR92P is a low-noise silicon bipolar RF transistor designed for broadband amplifiers up to 2 GHz and fast non-saturated switches. It operates with collector currents ranging from 0.5 mA to 20 mA. This device is Pb-free, RoHS compliant, and has an AEC-Q101 qualification report ...
Industrial grade RF transistor Infineon BFP 740ESD H6327 featuring SiGe C technology and 2 kV ESD robustness
Product OverviewThe BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) featuring integrated ESD protection. It offers a unique combination of high-end RF performance and robustness, including a maximum RF input power of 21 dBm and 2 kV ESD robustness (HBM). This device is ...
Silicon NPN Power Transistor ISC BUX98A Designed for High Voltage and Fast Switching Applications
Product OverviewThe BUX98A is a Silicon NPN Power Transistor designed for high voltage and high current applications. It offers fast switching speeds and minimal lot-to-lot variations, ensuring robust device performance and reliable operation. This transistor is suitable for use in high frequency ...
Jilin Sino Microelectronics 3DD5024 transistor designed for high voltage horizontal deflection output
Product OverviewThe 3DD5023P is a high breakdown voltage NPN bipolar transistor designed for low-frequency applications, specifically for the horizontal deflection output circuit in color televisions. Manufactured using advanced techniques like high-voltage planar process and triple diffusion, it ...
Low noise figure silicon bipolar RF transistor Infineon BFP196WH6327 for broadband amplifier and telecom
Product OverviewThe BFP196W is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It is also suitable as a power amplifier for DECT and PCN systems. This transistor offers a transition ...
