Single Bipolar Transistors

ISC Silicon PNP Power Transistor 2SA940The 2SA940 is a PNP power transistor designed for general-purpose power amplifier and vertical output applications. It offers a high collector-emitter breakdown voltage of -150V and a DC current gain ranging from 40 to 140 at -0.5A. This transistor is a complement to the 2SC2073 type, ensuring robust device performance and reliable operation with minimal lot-to-lot variations.Product AttributesBrand: ISCTrademark: ISC & ISCsemiMaterial:

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD4617H The 3DD4617H is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers robust performance with high voltage and current capabilities. Product Attributes Brand: Jilin Sino-microelectronics Co., Ltd Origin: China Certifications: Halogen-Free options available Technical Specifications Order Code Marking Package Halogen-Reel Halogen-Free-Reel Halogen-Bag Halogen-Free-Bag

Product OverviewThe BFR193 is a low-noise silicon bipolar RF transistor designed for high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It offers a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This device is Pb-free (RoHS compliant) and has an AEC-Q101 qualification report available. It is an ESD-sensitive device requiring careful handling.Product AttributesBrand: Infineon TechnologiesPackage: SOT23Certifications:

Product OverviewThe BFR106 is a low-noise silicon bipolar RF transistor designed for UHF/VHF applications. It offers high linearity with 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, making it suitable as a driver for multistage amplifiers and for linear broadband and antenna amplifiers. The collector design supports a 5 V supply voltage, and it comes in a Pb-free (RoHS compliant) SOT23 package. Qualification is available according to AEC-Q101.Product AttributesBrand: Infineon

Product OverviewThe BFS17W is a NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz. It operates at collector currents ranging from 1 mA to 20 mA and comes in a Pb-free (RoHS compliant) package. This device is ESD sensitive and requires careful handling.Product AttributesBrand: Infineon TechnologiesPackage Type: SOT323Certifications: Pb-free (RoHS compliant)Technical SpecificationsParameterSymbolValueUnitNotesMaximum RatingsCollector-emitter voltageVCEO15V

Product OverviewThe MMBTA05LT1 and MMBTA06LT1 are NPN silicon driver transistors designed for general-purpose applications. They are available in Pb-Free packages, offering an environmentally conscious choice. These devices are suitable for various driving applications where reliable NPN transistor performance is required.Product AttributesBrand: onsemi (Semiconductor Components Industries, LLC)Certifications: PbFree Packages AvailableTechnical SpecificationsCharacteristicSym

Product OverviewThe 2SC4793 is a Silicon NPN Power Transistor from ISC, featuring a high Collector-Emitter Breakdown Voltage of 230V (Min) and a high Current-Gain Bandwidth Product. It is designed as a complement to the 2SA1837 and offers minimum lot-to-lot variations for robust device performance. This transistor is suitable for power amplifier and driver stage amplifier applications.Product AttributesBrand: ISCTrademark: ISC & ISCsemiMaterial: SiliconType: NPN Power

Product OverviewThe BFP650F is a low-profile NPN RF bipolar transistor built on SiGe:C technology, belonging to Infineon's sixth-generation transistor family. It offers a high transition frequency (fT) of 42 GHz and excellent linearity, making it suitable for oscillator applications. This device provides a cost-effective solution without compromising ease of use.Product AttributesBrand: InfineonTechnology: SiGe:CProduct Family: Sixth Generation RF TransistorsCertifications:

Product OverviewThe BFP181 is a low-noise silicon bipolar RF transistor designed for low-noise, high-gain broadband amplifiers. It operates at collector currents from 0.5 mA to 12 mA and features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This Pb-free (RoHS compliant) component is available with qualification reports according to AEC-Q101 and is ESD sensitive, requiring careful handling.Product AttributesBrand: Infineon

ISC Silicon NPN Power Transistor 2N4923The ISC 2N4923 is a Silicon NPN Power Transistor designed for driver circuits, switching, and amplifier applications. It features a Collector-Emitter Sustaining Voltage of 80V (Min), a low Collector Saturation Voltage of 0.6V (Max.) at IC=1A, and a wide Area of Safe Operation. It is a complement to the 2N4920 type, offering minimum lot-to-lot variations for robust device performance and reliable operation.Product AttributesBrand:

Product OverviewThe 2SA1869 is a Silicon PNP Power Transistor from ISC, designed for power amplifier applications. It features a collector-emitter breakdown voltage of -50V, good linearity of hFE, and is a complement to type 2SC4935. Its robust device performance and reliable operation are ensured by minimum lot-to-lot variations.Product AttributesBrand: ISCTrademark: ISC & ISCsemiMaterial: SiliconType: PNP Power TransistorTechnical SpecificationsSymbolParameterConditionsMinT

Product OverviewThe SMBTA42/MMBTA42 are NPN Silicon High-Voltage Transistors designed for various applications. They offer a low collector-emitter saturation voltage and are Pb-free (RoHS compliant). Complementary PNP types, SMBTA92/MMBTA92, are also available. These transistors are qualified according to AEC Q101 standards.Product AttributesBrand: Infineon TechnologiesPackage: SOT23Certifications: AEC Q101, Pb-free (RoHS compliant)Type Marking: s1DComplementary Types:

Product OverviewThe BFQ19S is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers. It is suitable for antenna and telecommunications systems operating up to 1.5 GHz with collector currents ranging from 10 mA to 70 mA. This transistor is Pb-free and RoHS compliant, with qualification reports available according to AEC-Q101.Product AttributesBrand: Infineon TechnologiesPackage: SOT89Certifications: AEC-Q101 (Qualification report

Product OverviewThe ISC 2N6039 is a Silicon NPN Darlington Power Transistor designed for general-purpose switching and amplifier applications. It features a high DC current gain of 750(Min)@IC=2A and a Collector-Emitter Sustaining Voltage of 80V(Min). It is a complement to the 2N6036 type.Product AttributesBrand: ISCTrademark: ISC & ISCsemiMaterial: SiliconTechnical SpecificationsSymbolParameterConditionsMinMaxUnitVCEO(SUS)Collector-Emitter Sustaining VoltageIC= 50mA; IB=

Product OverviewThe Inchange Semiconductor 2SC3858 is a Silicon NPN Power Transistor designed for audio and general-purpose applications. It features the MT-200 package and is a complement to the 2SA1494 type.Product AttributesBrand: Inchange SemiconductorProduct Type: Silicon NPN Power TransistorPackage: MT-200Complementary Type: 2SA1494Technical SpecificationsSymbolParameterConditionsValueUnitAbsolute Maximum RatingsVCBOCollector-base voltageOpen emitter200VVCEOCollector

Product OverviewThe BFR92P is a low-noise silicon bipolar RF transistor designed for broadband amplifiers up to 2 GHz and fast non-saturated switches. It operates with collector currents ranging from 0.5 mA to 20 mA. This device is Pb-free, RoHS compliant, and has an AEC-Q101 qualification report available. It is an ESD-sensitive device and requires careful handling.Product AttributesBrand: Infineon TechnologiesPackage: SOT23Certifications: AEC-Q101Compliance: Pb-free (RoHS

Product OverviewThe BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) featuring integrated ESD protection. It offers a unique combination of high-end RF performance and robustness, including a maximum RF input power of 21 dBm and 2 kV ESD robustness (HBM). This device is qualified for industrial applications and is suitable for a wide range of wireless communication, satellite communication, multimedia, and ISM applications.Product AttributesBrand:

Product OverviewThe BUX98A is a Silicon NPN Power Transistor designed for high voltage and high current applications. It offers fast switching speeds and minimal lot-to-lot variations, ensuring robust device performance and reliable operation. This transistor is suitable for use in high frequency and efficiency converters, as well as linear and switching industrial equipment.Product AttributesBrand: ISCTrademark: ISC & ISCsemiMaterial: SiliconType: NPN Power TransistorTechnic

Product OverviewThe 3DD5023P is a high breakdown voltage NPN bipolar transistor designed for low-frequency applications, specifically for the horizontal deflection output circuit in color televisions. Manufactured using advanced techniques like high-voltage planar process and triple diffusion, it features a fully plastic package and is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectronics Co., Ltd.Certifications: RoHSTechnical SpecificationsOrder CodeMarkingPack

Product OverviewThe BFP196W is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It is also suitable as a power amplifier for DECT and PCN systems. This transistor offers a transition frequency (fT) of 7.5 GHz and a minimum noise figure (NFmin) of 1.3 dB at 900 MHz. It is available in a Pb-free (RoHS compliant) and halogen-free package with visible leads, and a