Single Bipolar Transistors

Product OverviewThe BCM846S is a silicon NPN bipolar transistor array designed for current mirror applications. It features a precision-matched transistor pair with a collector current difference of less than or equal to 10%, low collector-emitter saturation voltage, and two internally isolated transistors. This device is Pb-free and RoHS compliant, qualified according to AEC Q101 standards.Product AttributesBrand: Infineon TechnologiesComplementary Type: BCM856SMaterial:

Product OverviewThe 3DD4612DT/M is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for chargers, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.Product AttributesBrand: Jilin Sino-microelectronics Co., Ltd.Origin:

Product OverviewThe BCX54-BCX56 series are NPN Silicon AF Transistors designed for AF driver and output stages. They offer high collector current, low collector-emitter saturation voltage, and are complementary to BCX51-BCX53 (PNP) series. These transistors are Pb-free (RoHS compliant) and qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesMaterial: SiliconCertifications: AEC Q101, RoHS compliantTechnical SpecificationsTypeType MarkingVCEO (V)VCBO

Product Overview The BFR183 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents ranging from 2 mA to 30 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This device is Pb-free, RoHS compliant, and a qualification report according to AEC-Q101 is available. It is an ESD-sensitive device and requires careful handling. Product Attributes Brand:

Product OverviewThe TC36x AA-Step is a 32-bit single-chip microcontroller designed for open market applications. This document provides detailed technical specifications, pin definitions, and electrical characteristics for various package variants.Product AttributesBrand: Infineon Technologies AGOrigin: GermanyEdition: 2021-03Version: V 1.1Technical SpecificationsSectionDescriptionPageSummary of FeaturesOverall feature summary7TC36x Pin Definition and FunctionsDetailed pin

Product OverviewThe BFP620 is a surface mount, high linearity silicon NPN RF bipolar transistor utilizing SiGe:C technology. As part of Infineon's sixth-generation transistor family, it offers excellent linearity and collector design, making it suitable for a wide range of wireless applications. This device provides cost competitiveness without compromising ease of use.Product AttributesBrand: InfineonTechnology: SiGe:CProduct Family: Sixth Generation RF TransistorCertificati

Infineon RF TransistorsInfineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. They are designed to enhance system sensitivity, improve interference immunity, and ensure stable signal reception and transmission across multiple bands. With a focus on performance, versatility, supply security, and quality, these transistors are ideal for next-generation mobile systems, infrastructure, and automotive applications.Product

BFN27 PNP Silicon High-Voltage TransistorsThe BFN27 is a PNP silicon high-voltage transistor designed for video output stages in TV sets and switching power supplies. It offers a high breakdown voltage and a low collector-emitter saturation voltage. This transistor is Pb-free and RoHS compliant, qualified according to AEC Q101.Product AttributesBrand: Infineon TechnologiesComplementary Type: BFN26 (NPN)Package: SOT23Certifications: AEC Q101 Qualified, Pb-free (RoHS compliant

Product OverviewThe BCV27 and BCV47 are NPN Silicon Darlington Transistors designed for general AF applications. They offer high collector current, high current gain, and are available in Pb-free (RoHS compliant) SOT23 packages. These transistors are qualified according to AEC Q101 standards and have complementary PNP types (BCV26, BCV46).Product AttributesBrand: Infineon TechnologiesMaterial: SiliconPackage: SOT23Certifications: AEC Q101, RoHS compliantType Marking: BCV27

BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF TransistorThe BFP640FESD is a robust, low-noise silicon germanium bipolar RF transistor designed for various RF applications. It offers excellent performance characteristics suitable for demanding RF circuitry.Product AttributesBrand: Infineon TechnologiesMaterial: Silicon Germanium (SiGe)Origin: Germany (Implied by publisher location)Technical SpecificationsParameterValueConditionsUnitMaximum RatingsCollector-Emitter

Product OverviewThe BFP405 is a low-noise silicon bipolar RF transistor designed for low current applications and oscillators up to 12 GHz. It offers a minimum noise figure (NFmin) of 1.25 dB at 1.8 GHz and an outstanding power gain (Gms) of 23 dB at 1.8 GHz. This device comes in a Pb-free (RoHS compliant) and halogen-free package with visible leads and is AEC-Q101 qualified.Product AttributesBrand: Infineon TechnologiesPackage: SOT343Certifications: AEC-Q101Material: Silicon

NPN Silicon AF Transistor The BC817K/BC818K series are NPN silicon AF transistors designed for general AF applications. They offer high collector current, high current gain, and low collector-emitter saturation voltage. These transistors are Pb-free and RoHS compliant, qualified according to AEC Q101. Product Attributes Brand: Infineon Technologies Material: Silicon Certifications: AEC Q101, RoHS compliant Technical Specifications TypeMarkingPackageVCEO (V)VCBO (V)VEBO (V)IC

Product Overview The BFP410 is a low-noise silicon bipolar RF transistor designed for high-frequency applications. It is suitable for handheld devices, high-frequency oscillators such as DROs for LNBs, and ISM band applications including Automatic Meter Reading and Sensors. This device features a high transit frequency of 25 GHz and is available in a Pb-free and halogen-free package with visible leads. A qualification report according to AEC-Q101 is available. Handle with

Product OverviewThe BFP405F is a low-profile, wideband silicon NPN RF bipolar transistor designed for high-frequency applications. It features a grounded emitter (SIEGET) structure, offering low noise characteristics and suitability for oscillators up to 12 GHz. This device provides cost competitiveness without compromising ease of use.Product AttributesBrand: InfineonMaterial: SiliconCertifications: Qualified for industrial applications according to JEDEC47/20/22Sensitive

Product OverviewThe BFR380F is a high-linearity, low-noise silicon bipolar RF transistor designed for driver amplifier applications. It offers an output compression point of 19.5 dBm at 1.8 GHz and a low noise figure of 1.1 dB at 1.8 GHz, making it ideal for oscillators up to 3.5 GHz. The collector design supports a 5 V supply voltage, and it is available in a Pb-free, halogen-free, thin small flat package with visible leads. Qualification reports according to AEC-Q101 are

Product OverviewThe ISC 2SC2336 is a Silicon NPN Power Transistor designed for audio frequency and high frequency power amplification. It features good linearity of hFE, a high collector-emitter breakdown voltage of 180V (Min), and a wide area of safe operation. This transistor is a complement to the 2SA1006 type and offers minimum lot-to-lot variations for robust device performance and reliable operation.Product AttributesBrand: ISCTrademark: ISC & ISCsemiOrigin: SiliconType

Product OverviewThe ISC 2SC5027 is a Silicon NPN Power Transistor designed for high-speed switching applications. It features a high Collector-Emitter Breakdown Voltage of 800V (Min) and offers minimum lot-to-lot variations for robust device performance and reliable operation.Product AttributesBrand: ISCTrademark: ISC & ISCsemiMaterial: SiliconOrigin: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsSymbolParameterConditionsMinTyp.MaxUnitV

NPN Silicon AF Transistor The BC817 and BC818 series are NPN silicon AF transistors designed for general audio frequency applications. They offer high collector current, high current gain, and low collector-emitter saturation voltage. These transistors are available in complementary PNP types (BC807/BC808 series) and come in Pb-free, RoHS-compliant packages, qualified according to AEC Q101 standards. Product Attributes Brand: Infineon Technologies Material: Silicon Certificat

BFP842ESD SiGe:C NPN RF Bipolar TransistorThe BFP842ESD is a high-performance RF heterojunction bipolar transistor (HBT) with integrated ESD protection, designed for 2.3 - 3.5 GHz LNA applications. It offers a unique combination of high-end RF performance and robustness, including a maximum RF input power of 16 dBm and 1 kV HBM ESD hardness. With a high transition frequency (fT) of 57 GHz, it delivers excellent noise performance at high frequencies (NFmin = 0.65 dB at 3.5 GHz

Product OverviewThe BFR340F is a low noise, silicon NPN RF bipolar transistor from Infineon's third-generation RF bipolar transistor family. It is designed for oscillator applications up to 3.5 GHz, offering low current and high breakdown voltage characteristics. This device provides a cost-competitive solution without compromising ease of use.Product AttributesBrand: InfineonMaterial: SiliconCertifications: Qualified for industrial applications according to JEDEC47/20