Single Bipolar Transistors
Silicon NPN Bipolar Transistor Array Infineon BCM 846S H6327 Suitable For Current Mirror Applications
Product OverviewThe BCM846S is a silicon NPN bipolar transistor array designed for current mirror applications. It features a precision-matched transistor pair with a collector current difference of less than or equal to 10%, low collector-emitter saturation voltage, and two internally isolated ...
Jilin Sino Microelectronics 3DD4612DT 92 high voltage transistor for fast switching power electronics
Product OverviewThe 3DD4612DT/M is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for chargers, electronic ballasts, high...
NPN Silicon AF Transistor Infineon BCX5616H6327XTSA1 with High Collector Current and RoHS Compliance
Product OverviewThe BCX54-BCX56 series are NPN Silicon AF Transistors designed for AF driver and output stages. They offer high collector current, low collector-emitter saturation voltage, and are complementary to BCX51-BCX53 (PNP) series. These transistors are Pb-free (RoHS compliant) and qualified ...
Low noise silicon bipolar RF transistor Infineon BFR183E6327HTSA1 for high gain broadband amplifiers
Product Overview The BFR183 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents ranging from 2 mA to 30 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 0.9 dB at 900 MHz. This device is Pb...
Infineon SAK-TC367DP-64F300S AA 32 bit microcontroller with detailed pad frame sequence and pin layout
Product OverviewThe TC36x AA-Step is a 32-bit single-chip microcontroller designed for open market applications. This document provides detailed technical specifications, pin definitions, and electrical characteristics for various package variants.Product AttributesBrand: Infineon Technologies ...
SiGe C technology RF transistor Infineon BFP620H7764XTSA1 for wireless communication applications
Product OverviewThe BFP620 is a surface mount, high linearity silicon NPN RF bipolar transistor utilizing SiGe:C technology. As part of Infineon's sixth-generation transistor family, it offers excellent linearity and collector design, making it suitable for a wide range of wireless applications. ...
RF transistor Infineon BFP520H6327 silicon germanium based for next generation communication systems
Infineon RF TransistorsInfineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. They are designed to enhance system sensitivity, improve interference immunity, and ensure stable signal reception and transmission across multiple bands. With a ...
High Voltage PNP Transistor Infineon BFN27E6327HTSA1 Suitable for TV Video Output and Power Supplies
BFN27 PNP Silicon High-Voltage TransistorsThe BFN27 is a PNP silicon high-voltage transistor designed for video output stages in TV sets and switching power supplies. It offers a high breakdown voltage and a low collector-emitter saturation voltage. This transistor is Pb-free and RoHS compliant, ...
NPN Silicon Darlington Transistor Infineon BCV 27 E6327 with Complementary PNP Types BCV26 and BCV46
Product OverviewThe BCV27 and BCV47 are NPN Silicon Darlington Transistors designed for general AF applications. They offer high collector current, high current gain, and are available in Pb-free (RoHS compliant) SOT23 packages. These transistors are qualified according to AEC Q101 standards and ...
Silicon Germanium Bipolar RF Transistor Infineon BFP650FH6327 Suitable for High Frequency RF Circuits
BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF TransistorThe BFP640FESD is a robust, low-noise silicon germanium bipolar RF transistor designed for various RF applications. It offers excellent performance characteristics suitable for demanding RF circuitry.Product AttributesBrand: Infineon ...
Pb free silicon bipolar RF transistor Infineon BFP405H6327XTSA1 with 1.25 dB noise figure at 1.8 GHz
Product OverviewThe BFP405 is a low-noise silicon bipolar RF transistor designed for low current applications and oscillators up to 12 GHz. It offers a minimum noise figure (NFmin) of 1.25 dB at 1.8 GHz and an outstanding power gain (Gms) of 23 dB at 1.8 GHz. This device comes in a Pb-free (RoHS ...
NPN Silicon AF Transistor Infineon BC817K25E6327HTSA1 with High Collector Current and RoHS Compliance
NPN Silicon AF Transistor The BC817K/BC818K series are NPN silicon AF transistors designed for general AF applications. They offer high collector current, high current gain, and low collector-emitter saturation voltage. These transistors are Pb-free and RoHS compliant, qualified according to AEC ...
Low noise silicon bipolar RF transistor Infineon BFP410H6327 suitable for high frequency applications
Product Overview The BFP410 is a low-noise silicon bipolar RF transistor designed for high-frequency applications. It is suitable for handheld devices, high-frequency oscillators such as DROs for LNBs, and ISM band applications including Automatic Meter Reading and Sensors. This device features a ...
Silicon npn rf transistor Infineon BFP 405F H6327 designed for low noise and high frequency circuits
Product OverviewThe BFP405F is a low-profile, wideband silicon NPN RF bipolar transistor designed for high-frequency applications. It features a grounded emitter (SIEGET) structure, offering low noise characteristics and suitability for oscillators up to 12 GHz. This device provides cost competitive...
Silicon Bipolar RF Transistor Infineon BFR380FH6327 with Halogen Free Thin Small Flat Package Design
Product OverviewThe BFR380F is a high-linearity, low-noise silicon bipolar RF transistor designed for driver amplifier applications. It offers an output compression point of 19.5 dBm at 1.8 GHz and a low noise figure of 1.1 dB at 1.8 GHz, making it ideal for oscillators up to 3.5 GHz. The collector ...
NPN Power Transistor ISC 2SC2336 Featuring High Collector Emitter Voltage and Linear hFE for Operation
Product OverviewThe ISC 2SC2336 is a Silicon NPN Power Transistor designed for audio frequency and high frequency power amplification. It features good linearity of hFE, a high collector-emitter breakdown voltage of 180V (Min), and a wide area of safe operation. This transistor is a complement to ...
High Voltage Silicon NPN Power Transistor ISC 2SC5027 with 800V Collector Emitter Breakdown Voltage
Product OverviewThe ISC 2SC5027 is a Silicon NPN Power Transistor designed for high-speed switching applications. It features a high Collector-Emitter Breakdown Voltage of 800V (Min) and offers minimum lot-to-lot variations for robust device performance and reliable operation.Product AttributesBrand...
Silicon AF Transistor Infineon BC817-25B5000 Featuring High Collector Current and Low VCE Saturation
NPN Silicon AF Transistor The BC817 and BC818 series are NPN silicon AF transistors designed for general audio frequency applications. They offer high collector current, high current gain, and low collector-emitter saturation voltage. These transistors are available in complementary PNP types (BC807...
RF Heterojunction Bipolar Transistor Infineon BFP842ESDH6327XTSA1 with ESD Protection and High Gain
BFP842ESD SiGe:C NPN RF Bipolar TransistorThe BFP842ESD is a high-performance RF heterojunction bipolar transistor (HBT) with integrated ESD protection, designed for 2.3 - 3.5 GHz LNA applications. It offers a unique combination of high-end RF performance and robustness, including a maximum RF input ...
Low noise silicon NPN RF bipolar transistor Infineon BFR340FH6327XTSA1 designed for oscillator applications up to 35 GHz
Product OverviewThe BFR340F is a low noise, silicon NPN RF bipolar transistor from Infineon's third-generation RF bipolar transistor family. It is designed for oscillator applications up to 3.5 GHz, offering low current and high breakdown voltage characteristics. This device provides a cost...
