Single Bipolar Transistors

quality 30 volt 5 amp transistor ROHM 2SCR542PT100 optimized for low frequency amplification and switching factory

30 volt 5 amp transistor ROHM 2SCR542PT100 optimized for low frequency amplification and switching

2SCR542P Middle Power Transistor (30V / 5A)The 2SCR542P is a middle power transistor designed for low frequency amplification and high-speed switching applications. It features low saturation voltage, with a typical VCE(sat) of 400mV (Max.) at IC/IB=2A/100mA, and high-speed switching capabilities.Product AttributesBrand: ROHMPackage: SOT-89 (MPT3) / SC-62Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParame

quality PNP transistor ROHM 2SA2071T100Q designed for low frequency amplifiers and high speed switching circuit factory

PNP transistor ROHM 2SA2071T100Q designed for low frequency amplifiers and high speed switching circuit

Product OverviewThe 2SA2071 is a middle power PNP transistor designed for high-speed switching applications. It features low saturation voltage, strong discharge power for inductive and capacitive loads, and complements the 2SC5894 transistor. This component is suitable for low frequency amplifiers and high-speed switching circuits.Product AttributesBrand: ROHMPackage: SOT-89 (MPT3), SC-62Origin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not

quality Low frequency amplifier transistor ROHM US6X8TR with medium power rating and compact SOT363T package factory

Low frequency amplifier transistor ROHM US6X8TR with medium power rating and compact SOT363T package

Product OverviewThe US6X8 is a complex medium power transistor designed for low frequency amplifier applications. It features high current capability and low saturation voltage (VCE(sat) max. 350mV at IC=500mA/IB=25mA). This transistor is available in the SOT-363T (TUMT6) package.Product AttributesBrand: ROHMOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsPart No.PackageVCEO (V)IC (A)PD (W/Total)Tj (C)Tstg

quality Lead Free RoHS Compliant ROHM 2SD1733TLR NPN Transistor for LED Driver and Power Supply Applications factory

Lead Free RoHS Compliant ROHM 2SD1733TLR NPN Transistor for LED Driver and Power Supply Applications

Product OverviewThe ROHM 2SD1898 / 2SD1733 are NPN middle power transistors designed for driver applications. They offer low VCE(sat) of 0.4V Max. (IC/IB=500mA/20mA) and are available in complementary PNP types. These transistors are suitable for motor drivers, LED drivers, and power supplies. They are lead-free and RoHS compliant.Product AttributesBrand: ROHMCertifications: Lead Free/RoHS CompliantTechnical SpecificationsParameterSymbol2SD18982SD1733UnitConditionsMin.Typ.Max

quality Epitaxial planar type PNP silicon transistor ROHM 2SB1198KT146R with low VCEsat and high breakdown voltage factory

Epitaxial planar type PNP silicon transistor ROHM 2SB1198KT146R with low VCEsat and high breakdown voltage

Product OverviewThe 2SB1198K is a PNP silicon transistor of epitaxial planar type, designed for low-frequency applications. It features low VCE(sat) of 0.2V (Typ.) and a high breakdown voltage of BVCEO = 80V. This transistor complements the 2SD1782K and is suitable for use in ordinary electronic equipment such as audio visual, office automation, communications devices, electrical appliances, and electronic toys.Product AttributesBrand: ROHM CO.,LTD.Structure: Epitaxial planar

quality Small signal amplifier ROHM 2SC4081U3HZGT106Q with low output capacitance and AEC Q101 certification factory

Small signal amplifier ROHM 2SC4081U3HZGT106Q with low output capacitance and AEC Q101 certification

Product OverviewThe 2SC4081U3 HZG is a general-purpose small signal amplifier designed for various applications. It features low output capacitance (Cob = 2.0pF Typ.) and complements the 2SA1576U3 HZG. This AEC-Q101 qualified component is suitable for general-purpose small signal amplification.Product AttributesBrand: ROHMCertifications: AEC-Q101 QualifiedPackage Type: SOT-323 (UMT3)Technical SpecificationsParameterSymbolConditionsValues (Min)Values (Typ)Values (Max

quality silicon transistor LRC LBC857BTT1G in SC89 package suitable for amplifier and automotive electronic applications factory

silicon transistor LRC LBC857BTT1G in SC89 package suitable for amplifier and automotive electronic applications

Product OverviewThe LBC857ATT1G Series are general purpose PNP silicon transistors designed for amplifier applications. They are housed in the low-power SC-89 surface mount package. Pb-Free packages are available. The S- prefix denotes automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.Product AttributesBrand: LESHAN RADIO COMPANY, LTD.Material: SiliconCertifications: AEC-Q101 Qualified (S-

quality PNP silicon transistor LRC L9015QLT1G series offering collector emitter voltage of 45 volts in SOT23 package factory

PNP silicon transistor LRC L9015QLT1G series offering collector emitter voltage of 45 volts in SOT23 package

Product OverviewThe L9015QLT1G series are general-purpose PNP silicon transistors from LESHAN RADIO COMPANY, LTD. They are complementary to the L9014 and are designed for various applications requiring reliable performance. Available in SOT-23 package, these transistors offer specific electrical characteristics suitable for general-purpose use.Product AttributesBrand: LESHAN RADIO COMPANY, LTD.Material: SiliconCertifications: AEC-Q101 Qualified and PPAP Capable (for S-prefix

quality Automotive PNP Silicon Driver Transistor LRC LMBTA56LT1G with RoHS Compliance and SOT23 Package Design factory

Automotive PNP Silicon Driver Transistor LRC LMBTA56LT1G with RoHS Compliance and SOT23 Package Design

Product OverviewThis PNP Silicon driver transistor is designed for automotive and other applications requiring unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with stringent industry standards. The device offers robust performance with a maximum collector-emitter voltage of -80 Vdc and a continuous collector current of -500 mAdc.Product AttributesCompliance: RoHS requirements and Halogen

quality Surface Mount Dual NPN Small Signal Transistor LRC S-LMBT5551DW1T1G SOT363 Package Electronic Part factory

Surface Mount Dual NPN Small Signal Transistor LRC S-LMBT5551DW1T1G SOT363 Package Electronic Part

LMBT5551DW1T1G Dual NPN Small Signal Surface Mount TransistorThe LMBT5551DW1T1G is a dual NPN small signal surface mount transistor designed for general purpose applications. It offers reliable performance in a compact SOT-363/SC-88 package, suitable for various electronic circuits.Product AttributesBrand: LESHAN RADIO COMPANY, LTD.Device Marking: G1Package: SOT-363/SC-88RoHS Compliance: YesAEC-Q101 Qualified: Yes (with S- prefix)Technical SpecificationsCharacteristicSymbolVa

quality NPN Silicon Transistor LRC LBC847BTT1G SC89 Package Designed General Purpose Amplifier Surface Mount factory

NPN Silicon Transistor LRC LBC847BTT1G SC89 Package Designed General Purpose Amplifier Surface Mount

Product OverviewThese NPN silicon transistors are designed for general purpose amplifier applications. They are housed in the SC-89 package, which is suitable for low power surface mount applications. Pb-Free packages are available.Product AttributesBrand: LESHAN RADIO COMPANY, LTD.Series: LBC847ATT1G SeriesPackage: SC-89Certifications: AEC-Q101 Qualified and PPAP Capable (for S- Prefix variants)Technical SpecificationsCharacteristicSymbolLBC847A (Min/Typ/Max)LBC847B (Min/Typ

quality Low Saturation Voltage NPN Transistor LRC S-LBSS4250Y3T1G PPAP Capable RoHS Compliant for Motor Drivers factory

Low Saturation Voltage NPN Transistor LRC S-LBSS4250Y3T1G PPAP Capable RoHS Compliant for Motor Drivers

Product OverviewThe LBSS4250Y3T1G and S-LBSS4250Y3T1G are NPN Middle Power Transistors designed for middle power driver applications. They offer low VCE(sat) and are suitable for motor drivers and LED drivers. The S- prefix variant is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications with unique site and control change requirements. Both product variants comply with RoHS requirements and are Halogen Free.Product AttributesBrand:

quality Surface mount dual small signal transistor LRC LMBT5541DW1T1G with ROHS and halogen free compliance factory

Surface mount dual small signal transistor LRC LMBT5541DW1T1G with ROHS and halogen free compliance

Product OverviewThe LMBT5541DW1T1G and LMBT5541DW1T3G are dual small signal NPN transistors from LESHAN RADIO COMPANY, LTD., designed for surface mounting. They offer complementary PNP characteristics and are suitable for various electronic applications. The devices are ROHS compliant and halogen-free.Product AttributesBrand: LESHAN RADIO COMPANY, LTD.Product Series: LMBT5541DW1T1G, LMBT5541DW1T3GPackage: SOT-363/SC-88Compliance: ROHS compliant, Halogen freeSpecial Feature: S

quality General Purpose NPN Transistor S LBC817 25WT1G with AEC Q101 Certification and RoHS Compliant Design factory

General Purpose NPN Transistor S LBC817 25WT1G with AEC Q101 Certification and RoHS Compliant Design

Product OverviewThe LBC817-25WT1G and S-LBC817-25WT1G are NPN Silicon General Purpose Transistors. The S-prefix variant is specifically designed for automotive and other applications requiring unique site and control change requirements, offering AEC-Q101 qualification and PPAP capability. Both devices are RoHS compliant and Halogen Free.Product AttributesBrand: Leshan Radio Company, LTD.Material Compliance: RoHS, Halogen FreeCertifications: AEC-Q101 qualified (S-prefix),

quality Low saturation voltage NPN transistor LRC LBTN560Y3T1G with AEC Q101 qualification and PPAP capability factory

Low saturation voltage NPN transistor LRC LBTN560Y3T1G with AEC Q101 qualification and PPAP capability

Product OverviewThis NPN transistor offers low collector-emitter saturation voltage, high collector current capability and gain, leading to high efficiency and reduced heat generation. Its smaller PCB area requirement makes it suitable for space-constrained applications. Available in standard and S-prefix variants for automotive and other applications with unique site and control change requirements, it is AEC-Q101 qualified and PPAP capable. The material complies with RoHS

quality High Gain PNP Silicon Transistor LRC L2SA1576ART1G with 0.15 Watt Power Rating and SC70 Package Type factory

High Gain PNP Silicon Transistor LRC L2SA1576ART1G with 0.15 Watt Power Rating and SC70 Package Type

Product OverviewThe L2SA1576AQT1G Series from LESHAN RADIO COMPANY, LTD. are PNP silicon general-purpose transistors designed for a wide range of applications. These transistors offer reliable performance with key electrical characteristics such as collector-emitter breakdown voltage, DC current transfer ratio, and transition frequency.Product AttributesBrand: LESHAN RADIO COMPANY, LTD.Material: SiliconCertifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix series)

quality General Purpose Silicon Transistor LRC LBC846BLT1G Series with High ESD Ratings and RoHS Compliance factory

General Purpose Silicon Transistor LRC LBC846BLT1G Series with High ESD Ratings and RoHS Compliance

Product OverviewThe LBC846ALT1G Series NPN Silicon General Purpose Transistors from LESHAN RADIO COMPANY, LTD. are designed for a wide range of applications. These transistors offer reliable performance with features like high ESD ratings and compliance with RoHS requirements. They are suitable for general-purpose amplification and switching applications.Product AttributesBrand: LESHAN RADIO COMPANY, LTD.Material: SiliconCertifications: RoHS compliantTechnical SpecificationsS

quality General Purpose Transistor LRC LMBT4401LT1G NPN Silicon RoHS Compliant PPAP Capable Device factory

General Purpose Transistor LRC LMBT4401LT1G NPN Silicon RoHS Compliant PPAP Capable Device

General Purpose Transistors NPN Silicon This NPN silicon transistor is designed for general-purpose applications. It is AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The material is compliant with RoHS requirements and Halogen Free. Product Attributes Brand: LESHAN RADIO COMPANY, LTD. Material Compliance: RoHS, Halogen Free Certifications: AEC-Q101 Qualified, PPAP Capable

quality General Purpose PNP Silicon Transistor LRC LMBT3906TT1G Suitable for Various Electronic Applications factory

General Purpose PNP Silicon Transistor LRC LMBT3906TT1G Suitable for Various Electronic Applications

Product OverviewThe LMBT3906TT1G is a PNP silicon general purpose transistor from LESHAN RADIO COMPANY, LTD., designed for a wide range of applications. Its features simplify circuit design, making it a versatile component for various electronic systems.Product AttributesBrand: LESHAN RADIO COMPANY, LTD.Device Marking: 2AMaterial Compliance: RoHS requirementsPrefix for Automotive Applications: S- (AEC-Q101 Qualified and PPAP Capable)Technical SpecificationsModelTypeCollector

quality Silicon PNP Driver Transistor LRC LMBTA55LT1G SOT23 Package Ideal for Electronic Driver Functions factory

Silicon PNP Driver Transistor LRC LMBTA55LT1G SOT23 Package Ideal for Electronic Driver Functions

Product OverviewThe LMBTA55 and LMBTA56 are PNP silicon driver transistors in a SOT-23 (TO-236AB) package. These transistors are designed for general-purpose applications requiring driver functionality.Product AttributesBrand: LESHAN RADIO COMPANY, LTD.Package Type: SOT-23 (TO-236AB)Material: Silicon PNPCertifications: AEC-Q101 Qualified and PPAP Capable (for S- prefix variants)RoHS Compliance: DeclaredTechnical SpecificationsCharacteristicSymbolLMBTA55LMBTA56UnitConditionsMA

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