Single FETs, MOSFETs

Product Overview The ASDM100N34KQ is a 100V N-Channel MOSFET from Ascend Semiconductor Co., Ltd. It features Advanced Trench Technology, offering excellent RDS(ON) and low gate charge for efficient performance. This lead-free product is designed for applications such as load switching and PWM applications, making it suitable for power management solutions. Its robust design ensures reliable operation in demanding environments. Product Attributes Brand: Ascend Semiconductor Co

Product OverviewThe ARK Microelectronics DMD6014E is a 600V N-Channel Depletion-Mode Power MOSFET featuring ESD improved capability, a normally-on characteristic, and proprietary advanced planar technology. It offers a rugged polysilicon gate cell structure and fast switching speed, making it suitable for applications such as normally-on switches, SMPS start-up circuits, linear amplifiers, converters, and constant current sources.Product AttributesBrand: ARK Microelectronics

Product Overview The FTD03P20G is a 200V P-Channel Enhancement-Mode MOSFET from ARK Microelectronics Co., Ltd. It features a rugged polysilicon gate cell structure, integrated gate-to-source resistor and Zener diode, low on-resistance, low threshold voltage, low input capacitance, and fast switching speeds. This MOSFET is free from secondary breakdown and is available in a halogen-free, RoHS-compliant package. It is suitable for applications such as amplifiers, buffers,

Product OverviewThe DMZ0622E/DMX0622E series of depletion mode MOSFETs from ARK Microelectronics utilize proprietary ultrahigh threshold voltage technology. Designed for applications like Quick Charge (QC4.0) and Type C PD chargers, these MOSFETs can function as stable current or voltage sources. They offer a wide input voltage range (up to 70V) and can provide a stable output voltage clamped near the Gate-to-Source Cut-off Voltage (VGS(OFF)), protecting loads without the

Product OverviewThe DMZ0615E/DMX0615E series of depletion-mode MOSFETs from ARK Microelectronics utilize proprietary ultrahigh threshold voltage technology. These devices are designed for applications requiring stable voltage regulation, such as Quick Charge (QC4.0) and Type C PD chargers. They can function as a current or voltage source, providing stable power to loads and clamping output voltage to protect connected components. With input voltage capabilities up to 70V,

Product Overview The BL4N90 is a silicon N-channel Enhanced Power MOSFET designed for high-frequency switching mode power supplies (SMPS), high-speed switching, and general-purpose applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy. Key features include fast switching, 100% avalanche testing, and improved dv/dt capability, making it a reliable component for demanding

Product OverviewThe DMZ11C55EA/DMX11C55EA are 600V N-Channel Depletion-Mode Power MOSFETs from ARK Microelectronics Co., Ltd. These devices feature a depletion mode (normally-on) operation, are free from secondary breakdown, and utilize a proprietary advanced planar technology with a rugged polysilicon gate cell structure. They offer improved ESD capability, high input impedance, and are suitable for applications such as start-up circuits, normally-on switches, constant

1200V N-Channel Silicon Carbide Power MOSFETs Product Overview This series of 1200V N-Channel Silicon Carbide (SiC) Power MOSFETs offers high performance for demanding power electronics applications. Key features include a low drain-source on-resistance (RDS(ON) = 80m typ.) and easy gate control, operating in enhancement mode with a threshold voltage (Vth) between 2 to 4 V. These devices are suitable for applications such as asymmetrical bridge converters, inverters, and

Product Overview The Ascend Semiconductor ASDM60N30KQ is a 60V N-Channel MOSFET designed for high-density cell applications, offering ultra-low Rdson and excellent thermal dissipation. It features fully characterized avalanche voltage and current for robust performance, along with high EAS and special process technology for superior ESD capability. This MOSFET is ideal for power switching applications, hard-switched and high-frequency circuits, and uninterruptible power

DMX5530E Depletion-Mode Power MOSFETThe DMX5530E is a depletion-mode (normally on) power MOSFET from ARK Microelectronics, utilizing proprietary advanced planar technology with a rugged polysilicon gate cell structure. It is designed for applications requiring transient protection, start-up circuits, converters, normally-on switches, LED drive circuits, power supplies, and current or voltage sources. Available in SOT-89 package, this RoHS compliant and Halogen-free option

Product OverviewThe DMX4022E/DMS4022E are depletion-mode (normally-on) power MOSFETs from ARK Microelectronics, utilizing proprietary advanced planar technology. They offer a small package, low leakage current, and are suitable for various applications including transient protection, start-up circuits, converters, normally-on switches, LED drive circuits, power supplies, and current/voltage sources. Available in RoHS compliant and Halogen-free options.Product AttributesBrand:

Bestirpower BMx60N650UC1 N-Channel Power MOSFET Product Overview The Bestirpower BMx60N650UC1 is an N-Channel Power MOSFET utilizing advanced super junction technology to achieve very low on-resistance and gate charge. This design enhances efficiency through optimized charge coupling, offering designers the advantage of Low EMI and reduced switching losses. Its ultra-fast body diode and high commutation ruggedness make it suitable for demanding applications. Product

Product Overview The BLM2010E is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is suitable for load switch and PWM applications, and it is ESD protected with a rating of 2000V HBM. The BLM2010E provides high power and current handling capability and is a lead-free product. Product Attributes Brand: Belling Product Model:

Product Overview The BLM10P03 is a P-Channel Power MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It is designed for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as battery protection. Its high-density cell design contributes to lower RDS(ON), and it is available in various packages for good heat dissipation. Product Attributes Brand: Belling Product Type: Power MOSFET

Product Overview The Ascend Semiconductor ASDM3010S is a 30V Dual N-Channel MOSFET designed for power management applications, particularly in inverter systems and for synchronous rectification. It features dual N-Channel, 5V logic level control, enhancement mode operation, and fast switching capabilities, making it an efficient component for demanding power electronic circuits. Product Attributes Brand: Ascend Semiconductor Co.,Ltd Product Line: Ascend Model Series:

Product Overview The Belling BLM04N06 is a 60V N-Channel Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key features include a high-density cell design for lower RDS(ON), fully characterized avalanche voltage and current, and good stability and uniformity with high

BMF65N380E2 Super Junction Power MOSFET Product Overview The BMF65N380E2 is a 650V, 11A, 380m Super Junction Power MOSFET from Bestirpower, leveraging advanced super junction technology to achieve very low on-resistance and gate charge. Optimized charge coupling technology enables high efficiency, while user-friendly design provides Low EMI and low switching loss. This MOSFET is ideal for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), Power Factor

Product Overview The Belling BLM3407 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This device is well-suited for applications such as load switching and Pulse Width Modulation (PWM). It boasts high power and current handling capabilities and is a lead-free product. Product Attributes Brand: Belling Product Type: P-Channel

Product Overview The Ascend Semiconductor ASDM40DN20E is a 40V Dual N-Channel Power MOSFET designed with Trench Power LV MOSFET technology. It features an excellent package for heat dissipation and a high-density cell design for low RDS(ON). This MOSFET is suitable for high current load applications, load switching, hard switched and high frequency circuits, and uninterruptible power supplies. Product Attributes Brand: Ascend Semiconductor Co.,Ltd Type: Dual N-Channel Power

Product OverviewThe DMZ1015E/DMX1015E is a novel depletion-mode Power MOSFET from ARK Microelectronics, featuring an ultra-high threshold voltage. This device leverages proprietary advanced planar and ultrahigh Vth technologies to provide stable power to loads using its sub-threshold characteristics. It can clamp voltage to protect loads without requiring a Zener diode, thereby reducing circuit consumption. Its applications include quick chargers, current sources, and voltage