Single FETs, MOSFETs
High speed power switching solution ANHI AUR020N10 Silicon N Channel MOSFET for SMPS and industrial
Product Overview The AUR020N10 and AUW025N10 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They are particularly suited for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching, and high-speed DC/DC converters in telecommunications ...
1200V Power MOSFET ANHI ADQ120N040G2 Silicon Carbide Device for Inverter and Converter Circuits
Product Overview The ADQ120N040G2 is a 1200V N-Channel Silicon Carbide Power MOSFET designed for high-performance applications. It features a low drain-source on-resistance of 40m (typ.) and is easy to control with a gate switching enhancement mode. This MOSFET is suitable for use in asymmetrical ...
N Channel Depletion Mode MOSFET ARK micro DMS8550E 850V with Compact Package and High Voltage Rating
ARK Microelectronics DMS8550E - 850V N-Channel Depletion-Mode Power MOSFET The ARK Microelectronics DMS8550E is an 850V N-Channel Depletion-Mode Power MOSFET featuring ESD improved capability, a high breakdown voltage, and a small SOT-223 package. Utilizing proprietary advanced planar technology and ...
1200 Volt N Channel MOSFET Bestirpower BCZ120N40M2 Designed for Power Conversion in Solar Inverters and ESS
Product Overview The Bestirpower BCZ120N40M2 is a 1200 V N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion. It features high switching speed with low gate charge, a fast intrinsic diode with low reverse recovery, and robust avalanche capability. These characteristi...
High speed power switching ANHI AUB045N10BT Silicon N Channel MOSFET for switched mode power supplies
Product Overview AUB045N10BT is a Silicon N-Channel MOSFET designed for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching, and high-speed DC/DC circuits within telecommunications and industrial applications. It features low drain-source on-resistance (RDS(on) = 4.1m ...
AUP033N08BG N Channel MOSFET Offering Low Gate Charge and High Speed Switching for Power Electronics
Product Overview The AUB033N08BG, AUP033N08BG, and AUW033N08BG are N-Channel MOSFETs designed for synchronous rectification and hard switching applications in DC/DC converters. They are suitable for high-speed circuits, telecommunications, and industrial applications. Key features include low drain...
1200V N Channel Power MOSFET Bestirpower BCL120N160W1 for Solar Inverter and Battery Charger Designs
BCL120N160W1: 1200V 160m Silicon Carbide Power MOSFET The BCL120N160W1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It offers a high blocking voltage of 1200V combined with a low on-resistance of 160m, enabling higher system efficiency and reduced ...
ASM60R330E N Channel MOSFET Featuring Low RDS on and Typical Threshold Voltage for Power Electronics
Product Overview The ASA60R330E, ASD60R330E, and ASM60R330E are N-Channel Silicon MOSFETs designed for high-efficiency power applications. These devices feature low drain-source on-resistance (RDS(on)) for easy gate control and are built in enhancement mode with a typical threshold voltage (Vth) of ...
Power MOSFET Bestirpower BMD70N360E2 Featuring Super Junction Technology for UPS and PFC Applications
Product Overview The BMD70N360E2 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced Super Junction technology to achieve exceptionally low on-resistance and gate charge. This device facilitates significantly higher efficiency through optimized charge coupling technology, ...
Power Conversion MOSFET ANHI ASD70R380E N Channel Silicon Device with Low Drain Source Resistance
Product Overview The ASA70R380E, ASD70R380E, and ASB70R380E are N-Channel Silicon MOSFETs designed for high-efficiency power conversion. These enhancement-mode devices feature low drain-source on-resistance (RDS(on)) and easy gate control, making them ideal for single-ended flyback or two-transistor ...
Power MOSFET ASA50R130E Featuring 130 Milliohm On Resistance and 70 Amp Pulsed Current Capability
Product Overview The ASA50R130E is a Silicon N-Channel MOS enhancement mode MOSFET designed for efficient power conversion. It features a low drain-source on-resistance of 0.113 (typ.) and is easy to control, making it suitable for single-ended flyback or two-transistor forward topologies. Key ...
Silicon N Channel MOSFET ANHI AUP074N10 Designed for Power Switching in LED and Display Applications
AUP074N10 N-Channel MOSFET The AUP074N10 is a Silicon N-Channel MOSFET designed for efficient power switching applications. It features a low drain-source on-resistance (RDS(ON) = 6.5m typ.) and is easy to control due to its enhancement mode gate switching. This MOSFET is ideal for single-ended ...
Silicon N Channel MOSFET ASA70R380E with Easy Gate Switching and Low Drain Source On Resistance
Product Overview The ASA70R380E, ASD70R380E, and ASB70R380E are N-Channel Silicon MOSFETs designed for efficient power conversion. These enhancement-mode devices feature low drain-source on-resistance (RDS(on)) and easy gate control, making them suitable for single-ended flyback or two-transistor ...
Super Junction Power MOSFET Bestirpower BMW95N180UE1Z with Low On Resistance and Gate Charge
Product Overview The BMW95N180UE1Z is a Super Junction Power MOSFET from Bestirpower, engineered with advanced technology to achieve very low on-resistance and gate charge. This device offers significantly higher efficiency through optimized charge coupling, providing advantages such as Low EMI and ...
Power Management MOSFET ANPEC APM4500AKC-TRG Dual N Channel and P Channel with Lead Free Compliance
Product Overview The APM4500AK is a Dual Enhancement Mode MOSFET featuring both N-Channel and P-Channel configurations. It is designed for power management in applications such as notebook computers, portable equipment, and battery-powered systems. Key advantages include a super high dense cell ...
Silicon Carbide Power MOSFET ADR065N028AH 650V N Channel 42m Ohm On Resistance for Power Electronics
Product Overview The ADQ065N028AH, ADW065N028AH, and ADR065N028AH are 650V N-Channel Silicon Carbide Power MOSFETs designed for high-performance power electronics applications. These devices offer a low drain-source on-resistance of 30m (typ.) and are easy to control with a gate switching enhancemen...
N Channel MOSFET AUA060N08AG for synchronous rectification and high speed switching applications
Product Overview The AUA060N08AG series are N-Channel MOSFETs designed for synchronous rectification and high-speed switching applications. These devices are suitable for DC/DC converters, SMPS, and telecommunications, offering low drain-source on-resistance and enhanced ruggedness. Key features ...
depletion mode power MOSFET ARK micro DMS4022E with low on resistance and 0.24A continuous drain current
ARK Microelectronics DMX4022E/DMS4022E Depletion-Mode Power MOSFET The DMX4022E and DMS4022E are depletion-mode (normally on) power MOSFETs from ARK Microelectronics, utilizing proprietary advanced planar technology. These devices offer a small package, low leakage current, and are suitable for ...
N Channel Silicon Carbide Power MOSFET Bestirpower BCZ120N32W1 1200 Volt 69 Amp for Renewable Energy Systems
BCZ120N32W1 N-Channel Silicon Carbide Power MOSFET Product Overview The BCZ120N32W1 is a 1200 V, 69 A N-Channel Silicon Carbide Power MOSFET designed for high-performance applications. It offers reduced switching losses, increased switching frequency, and higher power density, leading to a reduction ...
N Channel Silicon MOSFET ANHI ASB80R750E TO263 Package for LED Lighting and Power Supply Applications
Product Overview The ASA80R750E, ASD80R750E, and ASB80R750E are N-Channel Silicon MOSFETs designed for efficient power conversion. These enhancement-mode devices feature low drain-source on-resistance (RDS(ON) = 620m typ.) and easy gate control. They are ideal for applications such as single-ended ...
