Single FETs, MOSFETs

Product Overview The BCW120N21M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications in solar inverters, EV charging stations, UPS systems, and industrial power supplies. It offers a robust 1200V rating and a low on-resistance of 21m, contributing to system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling efforts. Key features include high switching speed with low gate charge, a

Product Overview The BMW65N075UC1 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to deliver exceptionally low on-resistance and gate charge. This high-efficiency device utilizes optimized charge coupling technology, providing designers with advantages such as low EMI and reduced switching loss. It is ideal for applications including Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), Power Factor

Product Overview The ASW65R072EFDA is a Silicon N-Channel MOSFET designed for soft switching applications. Its key features include a low drain-source on-resistance of 0.060 (typ.) and easy gate switching control with an enhancement mode. This MOSFET is suitable for boost PFC switches, half-bridge, asymmetric half-bridge, series resonance half-bridge, and full-bridge topologies, including phase-shift-bridge (ZVS) and LLC configurations. It finds applications in server power,

Product Overview The AUP049N10 and AUB049N10 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They are particularly well-suited for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching, and high-speed DC/DC converters in telecommunications and industrial sectors. Key features include low drain-source on-resistance, enhanced body diode dv/dt capability, and robust avalanche ruggedness, ensuring reliable performance

Product Overview The AUP034N10 and AUB034N10 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They feature a low drain-source on-resistance (RDS(on) = 2.9m typ.), enhanced body diode dv/dt capability, and improved avalanche ruggedness. These MOSFETs are ideal for synchronous rectification in Switched-Mode Power Supplies (SMPS), and for hard switching and high-speed DC/DC converters in telecommunications and industrial sectors. Product

Product Overview The BMB65N100UC1 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced super junction technology to achieve exceptionally low on-resistance and gate charge. This design facilitates high efficiency through optimized charge coupling technology, offering designers the advantage of Low EMI and reduced switching losses. Its ultra-fast body diode and extremely low losses (FOM Rdson*Qg and Eoss) contribute to very high commutation ruggedness.

Product Overview The AUA060N08AG series are N-Channel MOSFETs designed for synchronous rectification and high-speed switching applications. These devices are suitable for DC/DC converters, SMPS, high-speed circuits, and industrial telecom applications. Key features include low drain-source on-resistance, high-speed switching, enhanced body diode, and rugged avalanche ruggedness. Product Attributes Brand: AUA (implied by part naming convention) Channel Type: N-Channel

Product OverviewThe DMZ85200E is an 850V Depletion-Mode Power MOSFET from ARK Microelectronics Co., Ltd. Designed for normally-on applications, it features ESD improved capability, fast switching speed, and a high breakdown voltage of 850V. Its small SOT-23 package and RoHS compliance make it suitable for various applications including start-up circuits, solid-state relays, telecommunications, power supplies, current regulators, and ignition modules.Product AttributesBrand:

Product Overview The AM9435 is a P-Channel logic enhancement mode power field-effect transistor manufactured using high cell density, DMOS trench technology. This advanced process is specifically designed to minimize on-state resistance, offering exceptional on-resistance and maximum DC current capability. It is particularly well-suited for low-voltage applications, notebook computer power management, and other battery-powered circuits requiring high-side switching. Key

Product Overview The Ascend Semiconductor ASDM30P11TD is a -30V P-Channel MOSFET designed for power switch circuits in adaptors, chargers, and notebook AC-in load switches. It features low FOM (RDS(on)Qgd), 100% avalanche testing, and is easy to use and drive. This RoHS compliant component offers a continuous drain current of -55A at 25C and a low on-state resistance of 6.4 m (typ.) at VGS = -10V. Its robust design makes it suitable for battery protection charge/discharge

Product Overview The SINOPOWER APM9435K is a P-Channel Enhancement Mode MOSFET designed for power management applications. It features a super high dense cell design, offering reliable and rugged performance. This device is suitable for use in notebook computers, portable equipment, and battery-powered systems. It is available in lead-free and green (RoHS compliant) options. Product Attributes Brand: SINOPOWER Product Type: P-Channel Enhancement Mode MOSFET Certifications:

Product Overview The ADQ120N080G2, ADW120N080G2, and ADG120N080G2 are 1200V N-Channel Silicon Carbide Power MOSFETs designed for applications such as asymmetrical bridge converters, inverters, and single-switch forward and flyback converters. These devices feature a low drain-source on-resistance of 80m (typ.) and are easy to control with an enhancement mode gate switching. The threshold voltage (Vth) ranges from 2 to 4V. Product Attributes Brand: Not specified Origin: Not

BMB65N046UE1: 650V, 46m Super Junction Power MOSFET Product Overview The BMB65N046UE1 is a high-performance Super Junction Power MOSFET from Bestirpower, engineered with advanced technology to achieve very low on-resistance and gate charge. This device offers significantly higher efficiency through optimized charge coupling technology, providing advantages such as low EMI and reduced switching losses for designers. Its ultra-fast body diode and exceptional commutation

Product Overview The BCZ120N16M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding applications. It features a high blocking voltage of 1200 V and a low on-resistance of 16 m, enabling system efficiency improvements and higher frequency applicability. With its high-speed switching capabilities, low capacitance, and inherent avalanche ruggedness, this MOSFET is easy to parallel and simple to drive, contributing to increased power density and

Product Overview The ASA MO 1. 2. 3. A65R350 OSFET is a N-Channel MOSFET designed for Power Factor Correction (PFC) and hard switching applications. It is suitable for use in PC power supplies, LCD Adaptors, lighting, servers, and telecom power applications. Key features include low drain-source on-resistance and easy gate switching control. This device offers enhanced performance in hard switching and resonant mode applications. Product Attributes Brand: ASA Series: MO 1. 2.

Product Overview The AUA062N08BG series are N-Channel MOSFETs designed for synchronous rectification and hard switching applications. These devices are ideal for high-speed circuits, DC/DC converters, SMPS, telecom, and industrial applications. Key features include low drain-source on-resistance, high-speed switching, enhanced body diode, and rugged avalanche capability. Product Attributes Brand: AUA Channel Type: N-Channel Technical Specifications Model Package Marking VDS @

Product Overview The ASA65R850E, ASU65R850, and ASD65R850E are N-Channel Silicon MOSFETs designed for various power applications. These devices feature low drain-source on-resistance (RDS(on)) and easy gate control, making them suitable for boost PFC switch, single-ended flyback, PC power, PD adaptors, LCD & PDP TVs, and LED lighting. They are available in TO220F, TO251, and TO252 packages, offering flexibility for different design requirements. Product Attributes Brand: Not

Product Overview The ASA80R290E and ASW80R290E are Silicon N-Channel Power MOSFETs designed for high-efficiency power conversion applications. These MOSFETs feature low drain-source on-resistance (RDS(on)) and easy gate control, making them ideal for single-ended flyback or two-transistor forward topologies. They are well-suited for use in PC power supplies, PD Adapters, LCD & PDP TVs, and LED lighting applications. The devices are available in TO220F and TO247 packages.

Product Overview The AUN036N10, AUP039N10, AUA039N10, and AUB039N10 are N-Channel Silicon MOSFETs designed for applications requiring efficient switching. These enhancement-mode devices offer low drain-source on-resistance and are suitable for single-ended flyback or two-transistor forward topologies. Key applications include PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. They are characterized by easy gate control and a typical threshold voltage (Vth)

Product Overview The ASDM3400ZA is a 30V N-Channel MOSFET featuring Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). It offers high-speed switching capabilities, making it suitable for applications such as battery protection, load switching, and power management. This MOSFET is supplied in a SOT-23 package. Product Attributes Brand: ShenZhen Ascend Semiconductor Incorporated Technology: Trench Power LV MOSFET Package: SOT-23 Origin: China