Single FETs, MOSFETs

Product Overview The AUP026N085 and AUB026N085 are N-Channel Silicon MOSFETs designed for high-speed power switching applications. They are particularly suited for synchronous rectification in Switched-Mode Power Supplies (SMPS), hard switching, and high-speed DC/DC converters in telecommunications and industrial sectors. Key features include a low drain-source on-resistance of 2.1m (typ.), enhanced body diode dv/dt capability, and robust avalanche ruggedness. Product

ASA60R280E, ASD60R280E MOSFET Silicon N-Channel Product Overview The ASA60R280E and ASD60R280E are Silicon N-Channel MOSFETs designed for efficient switching applications. They feature low drain-source on-resistance (RDS(on)) for reduced power loss and easy gate control. These enhancement-mode devices are suitable for various power supply topologies, including Boost PFC, single-ended flyback, HB or AHB or LLC topologies, and two-transistor forward configurations. Ideal

Product Overview The AUP056N08BGL, AUD056N08BGL, AUN050N08BGL, AUA056N08BGL, and AUB056N08BGL are N-Channel Silicon MOSFETs designed for applications in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. They are particularly suited for single-ended flyback or two-transistor forward topologies. These MOSFETs feature low drain-source on-resistance, easy gate control, and operate in enhancement mode with a typical threshold voltage (Vth) of 1.2 to 2.5 V. Key

Product Overview The AUN084N10 is a high-performance Silicon N-Channel MOS Field-Effect Transistor (MOSFET) designed for applications requiring low on-resistance and high-speed power switching. Its key features include a low drain-source on-resistance of 0.005 (typ.) and a continuous drain current of 68A. This MOSFET is ideal for portable equipment and battery-powered systems. Product Attributes Brand: AUN Model: AUN084N10 Type: Silicon N-Channel MOS Packaging: DFN5x6

Product Overview The ASA70R240E is a Silicon N-Channel MOS MOSFET designed for efficient power conversion in single-ended flyback or two-transistor forward topologies. It is ideal for applications such as PC power supplies, power adapters, LCD & PDP TVs, and LED lighting. Key features include a low drain-source on-resistance of 0.211 (typ.) and easy gate switching control, operating in enhancement mode with a threshold voltage (Vth) of 2.8 to 4.2 V. Product Attributes Brand:

Product Overview The ASDM100R090NP is a 100V N-CHANNEL MOSFET designed for high-speed power switching and logic-level applications. It features enhanced body diode dv/dt capability and avalanche ruggedness, with 100% UIS and Rg tested. This MOSFET is ideal for synchronous rectification in SMPS, hard switching and high-speed circuits, and DC/DC converters in telecoms and industrial sectors. It is also Lead Free and Halogen Free. Product Attributes Brand: Ascend Semiconductor

Product Overview The ASW65R095EFD is a Silicon N-Channel MOSFET designed for high-efficiency power applications. It features low drain-source on-resistance (RDS(on)) of 0.082 (typ.) and easy gate control with an enhancement mode. This MOSFET is ideal for use as a Boost PFC switch and in half-bridge, asymmetric half-bridge, resonance half-bridge, and full-bridge topologies. Key application areas include server power, telecom power, EV charging, and solar inverters. Product

Product Overview The Ascend Semiconductor ASDM3416EZA is a 20V N-Channel MOSFET featuring Trench Power LV MOSFET technology for high power and current handling capability. It offers ESD protection up to 3.5KV (HBM) and is ideal for PWM applications and load switching. Product Attributes Brand: Ascend Semiconductor Co.,Ltd Technology: Trench Power LV MOSFET Channel Type: N-Channel ESD Protection: Up to 3.5KV (HBM) Technical Specifications Parameter Symbol Conditions Limit Unit

Product Overview The ASA60R150E, ASW60R150E, and ASB60R150E are N-Channel Silicon MOSFETs designed for efficient power switching applications. These devices feature a low drain-source on-resistance (RDS(ON) = 0.120 typ.) and are easy to control due to their enhancement mode operation. They are suitable for a wide range of applications including PC power supplies, adapters, LCD & PDP TVs, LED lighting, server power, telecom power, and UPS systems. Key applications include

BCW120N160W1 1200V 160m Silicon Carbide Power MOSFET The BCW120N160W1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power electronic applications. It offers a combination of high blocking voltage, low on-resistance, and high-speed switching capabilities, making it suitable for solar inverters, switch mode power supplies, high voltage DC/DC converters, battery chargers, motor drives, and pulsed power applications. Key benefits include

Product Overview The APM4953 is a Dual P-Channel Enhancement Mode MOSFET designed for various applications. It offers low on-resistance and features robust performance characteristics, making it suitable for power management and switching applications. Product Attributes Brand: ANPEC Model: APM4953 Type: Dual P-Channel Enhancement Mode MOSFET Origin: Taiwan (implied by .tw domain) Copyright: ANPEC Electronics Corp. Revision: A.2 Date: Feb., 2003 Technical Specifications

Product Overview The ASA80R750E, ASD80R750E, and ASB80R750E are N-Channel Silicon MOSFETs designed for efficient power conversion. These enhancement-mode devices feature low drain-source on-resistance and easy gate switching control. They are ideal for single-ended flyback or two-transistor forward topologies, commonly found in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting applications. Product Attributes Type: Silicon N-Channel MOS Mode: Enhancement mode

Product Overview The Ascend Semiconductor ASDM30DN40E is a 30V Dual N-Channel Power MOSFET designed for high efficiency and fast switching applications. It features low on-resistance (RDS(on)) at various gate-source voltages, including VGS=4.5V and VGS=10V, with typical values of 8 m at VGS=10V and 12-18 m at VGS=4.5V. This RoHS compliant component is suitable for applications requiring robust performance and reliability, indicated by its continuous drain current ratings and

Product Overview The AUP052N085, AUB050N085, and AUN045N085 are N-Channel Silicon MOSFETs designed for efficient power switching applications. They feature low drain-source on-resistance and easy gate control, making them suitable for single-ended flyback or two-transistor forward topologies. These MOSFETs are ideal for use in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting systems. Product Attributes Brand: Not specified Origin: Not specified Material:

Product Overview The Ascend Semiconductor ASDM30P30BE is a P-Channel MOSFET designed for various power management applications. It features low RDS(ON) and fast switching capabilities, making it suitable for MB, VGA, Vcore, and POL applications. This device is also available as a Green Device. Product Attributes Brand: Ascend Semiconductor Co.,Ltd Product Type: P-Channel MOSFET Package Type: PDFN3.3*3.3-8 Green Device: Available Technical Specifications Product Summary Model

Product Overview The ASA70R950E, ASD70R950E, and ASE70R950E are N-Channel Silicon MOSFETs designed for efficient power switching applications. These enhancement-mode devices feature low drain-source on-resistance (RDS(ON) = 0.870 typ.) and are easy to control via gate switching. They are ideally suited for single-ended flyback converters, power adapters, LCD & PDP TVs, and LED lighting applications. Product Attributes Type: N-Channel Silicon MOSFET Mode: Enhancement mode

Product Overview This product line includes models ASW65R120EFD, ASA65R120EFD, and ASR65R120EFD. The provided text repeatedly lists these models without further descriptive information regarding their specific functions, advantages, or application scenarios. Product Attributes No specific product attributes such as brand, origin, material, or color were explicitly mentioned in the provided text. Technical Specifications Model Specification Value ASW65R120EFD Model Designation

Product Overview The ADQ120N080G2, ADW120N080G2, and ADG120N080G2 are 1200V N-Channel Silicon Carbide Power MOSFETs designed for applications such as asymmetrical bridge converters, inverters, and single-switch forward and flyback converters. These MOSFETs feature a low drain-source on-resistance of 80m (typ.) and are easy to control with a gate switching enhancement mode and a threshold voltage (Vth) ranging from 2 to 4 V. Product Attributes Brand: Not specified Origin: Not

Product Overview The AUN063N10 is a Silicon N-Channel MOS Field-Effect Transistor designed for efficient power management applications. It features a low drain-source on-resistance (RDS(ON) = 5.5m typ.) and is easy to control due to its enhancement mode gate switching. This MOSFET is ideal for single-ended flyback or two-transistor forward topologies, finding common use in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting solutions. Product Attributes Brand: AUN

Product Overview The ASDM540G is a 100V N-Channel MOSFET designed for power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. It features a high-density cell design for lower RDS(on), fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The package is optimized for excellent heat dissipation. Product Attributes Brand: Ascend Semiconductor Co.,Ltd Model: ASDM540G Type: