Single FETs, MOSFETs

quality Dual N Channel MOSFET Siliup SP8810DTS 20V 7A Drain Current SOT23 6L Package with 2KV ESD Protection factory

Dual N Channel MOSFET Siliup SP8810DTS 20V 7A Drain Current SOT23 6L Package with 2KV ESD Protection

Product Overview The SP8810DTS is a 20V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capabilities, ESD protection up to 2KV, and is available in a surface mount SOT-23-6L package. This MOSFET is suitable for applications such as ...

quality Shenzhen ruichips Semicon RU6888R N Channel MOSFET with Full Avalanche Rating and Low On Resistance factory

Shenzhen ruichips Semicon RU6888R N Channel MOSFET with Full Avalanche Rating and Low On Resistance

Product OverviewThe RU6888 is an N-Channel Advanced Power MOSFET designed for high-performance switching applications. It features ultra-low on-resistance, exceptional dv/dt capability, and fast switching with full avalanche rating. This MOSFET is 100% avalanche tested and operates at temperatures ...

quality Shenzhen ruichips Semicon RU30120S N Channel MOSFET designed for power management and DC DC converters factory

Shenzhen ruichips Semicon RU30120S N Channel MOSFET designed for power management and DC DC converters

Product OverviewThe RU30120S is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor, designed for high-efficiency applications. It features a Super High Dense Cell Design, Ultra Low On-Resistance, and is 100% Avalanche Tested. This device is ideal for DC-DC converters and other power ...

quality Power Switching MOSFET 150V N Channel with Low RDSon and Fast Switching Siliup SP015N06GHTG in TO 220F Package factory

Power Switching MOSFET 150V N Channel with Low RDSon and Fast Switching Siliup SP015N06GHTG in TO 220F Package

Product Overview The SP015N06GHTG is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ...

quality RU8590S R N Channel Power MOSFET by Shenzhen ruichips Semicon suitable for demanding power switching factory

RU8590S R N Channel Power MOSFET by Shenzhen ruichips Semicon suitable for demanding power switching

RU8590S N-Channel Advanced Power MOSFET The RU8590S is an N-Channel Advanced Power MOSFET designed for high-speed power switching applications. It offers ultra-low on-resistance, fast switching characteristics, and is fully avalanche rated, making it suitable for demanding applications. This device ...

quality Siliup SP80N120CTK Silicon Carbide MOSFET Suitable for Photovoltaic Inverters and Switch Mode Power Supplies factory

Siliup SP80N120CTK Silicon Carbide MOSFET Suitable for Photovoltaic Inverters and Switch Mode Power Supplies

Product Overview The SP80N120CTK is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-speed switching applications, it offers a low on-resistance (RDS(on)TYP of 13m@18V) and high blocking voltage. Its characteristics, including easy paralleling and ...

quality 40V N Channel Power MOSFET Siliup SP40N01ABGTO with Split Gate Trench Technology and Fast Switching factory

40V N Channel Power MOSFET Siliup SP40N01ABGTO with Split Gate Trench Technology and Fast Switching

Product Overview The SP40N01ABGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard-switched, and high...

quality N Channel MOSFET 120V Siliup SP012N02AGHTO with Low Reverse Transfer Capacitance and Fast Switching factory

N Channel MOSFET 120V Siliup SP012N02AGHTO with Low Reverse Transfer Capacitance and Fast Switching

Product Overview The SP012N02AGHTO is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-speed power switching applications, it features fast switching, low gate charge, and low RDS(on). Its low reverse transfer capacitances and 100% single pulse avalanche ...

quality Power MOSFET Siliup SP85N04BHTQ 85V N Channel Device with Fast Switching and Low Gate Charge Features factory

Power MOSFET Siliup SP85N04BHTQ 85V N Channel Device with Fast Switching and Low Gate Charge Features

Product Overview The SP85N04BHTQ is an 85V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management systems, this MOSFET features fast switching, low gate charge, and low RDS(on). It is 100% tested for single ...

quality Power Switching MOSFET Siliup SP010N15GTQ 100V N-Channel Device with Low Rdson and TO2203L Package factory

Power Switching MOSFET Siliup SP010N15GTQ 100V N-Channel Device with Low Rdson and TO2203L Package

Product Overview The SP010N15GTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, enabled by advanced split gate trench technology. This device is 100% tested for single pulse avalanche energy and is suitable ...

quality Low RDSon 100V N-Channel MOSFET Siliup SP2N10T2 Suitable for Battery Switches and DC DC Converters factory

Low RDSon 100V N-Channel MOSFET Siliup SP2N10T2 Suitable for Battery Switches and DC DC Converters

Product Overview The SP2N10T2 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high power and current handling capability and is designed for surface mount applications. Key applications include battery switches and DC/DC converters. The device offers a low Drain...

quality SP010N04AGHTD 100V N Channel MOSFET Featuring Low Gate Charge and TO 263 Package for Power Switching factory

SP010N04AGHTD 100V N Channel MOSFET Featuring Low Gate Charge and TO 263 Package for Power Switching

Product Overview The SP010N04AGHTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ...

quality Power Management Solutions Featuring Siliup SP30P06NJ 30V P Channel MOSFET with Fast Switching Speed factory

Power Management Solutions Featuring Siliup SP30P06NJ 30V P Channel MOSFET with Fast Switching Speed

Product Overview The SP30P06NJ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This MOSFET features fast switching speed, low On-Resistance, and 100% Single Pulse avalanche energy testing. It is designed for applications such as DC-DC Converters and Power Management, ...

quality N Channel Power MOSFET SP85N02AGHTD 85V 260A TO 263 Package Suitable for Power Switching Applications factory

N Channel Power MOSFET SP85N02AGHTD 85V 260A TO 263 Package Suitable for Power Switching Applications

Product Overview The SP85N02AGHTD is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable ...

quality Low RDSon N Channel MOSFET Siliup SP40N12P8 Designed for Power Switching and Hard Switched Circuits factory

Low RDSon N Channel MOSFET Siliup SP40N12P8 Designed for Power Switching and Hard Switched Circuits

Product Overview The SP40N12P8 is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), with typical RDS(on) values of 12m at 10V and 16m at 4.5V. This device is designed for power switching applications, including hard...

quality P Channel MOSFET Siliup SP2231ND 20V Drain Source Voltage Designed for Surface Mount Battery Switch factory

P Channel MOSFET Siliup SP2231ND 20V Drain Source Voltage Designed for Surface Mount Battery Switch

Product Overview The SP2231ND is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount MOSFET is suitable for applications such as battery switches and DC/DC converters. It offers a robust performance with key electrical ...

quality 30V N Channel MOSFET Siliup SP30N03NK PDFN5X6 8L Package ROHS Compliant Halogen Free Semiconductor factory

30V N Channel MOSFET Siliup SP30N03NK PDFN5X6 8L Package ROHS Compliant Halogen Free Semiconductor

Product Overview The SP30N03NK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching speeds, a surface mount PDFN5X6-8L package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% tested for single pulse ...

quality switching MOSFET Siliup SP20N08TH 20V N Channel with low gate charge and avalanche energy testing factory

switching MOSFET Siliup SP20N08TH 20V N Channel with low gate charge and avalanche energy testing

Product Overview The SP20N08TH is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-frequency switching and synchronous rectification applications. It offers fast switching speeds, low gate charge, and low RDS(on) at various gate voltages (8m @ 4.5V, 12m @ 2.5V)...

quality 40V N Channel MOSFET Siliup SP40N01AGTO Featuring Fast Switching and Low Rdson for Power Applications factory

40V N Channel MOSFET Siliup SP40N01AGTO Featuring Fast Switching and Low Rdson for Power Applications

Product Overview The SP40N01AGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ideal ...

quality 1200V Silicon Carbide MOSFET Sichainsemi S1M075120H1 N Channel Enhancement for Switching Performance factory

1200V Silicon Carbide MOSFET Sichainsemi S1M075120H1 N Channel Enhancement for Switching Performance

Product Overview The S1M075120H1 is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt. Key benefits include reduced cooling effort and requirements, efficiency ...

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