Single FETs, MOSFETs
Silicon Carbide MOSFET Model S1M040120H 1200V Designed for EV Battery Chargers and On Board Chargers
Product Overview The S1M040120H is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt, leading to reduced cooling efforts, improved efficiency, and increased ...
S1M040120D 1200V Silicon Carbide Power MOSFET with Fully Controllable dvdt and IGBT Compatible Drive
Product Overview The S1M040120D is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt, making it suitable for applications requiring high efficiency and reduced ...
High Current 20V N Channel MOSFET Siliup SP2002KNC with Low Static Drain Source On Resistance Rating
Product Overview The SP2002KNC is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, it features a surface mount package and ESD protection up to 2KV. This MOSFET is suitable for applications such as battery switches and DC/DC ...
Complementary Power MOSFET Load Switch Shenzhen ruichips Semicon RU40C40L4 N Channel P Channel 40V 40A
Product OverviewThe RU40C40L4 is a complementary advanced Power MOSFET featuring N-Channel (40V/40A, RDS(ON)=13m Typ. @ VGS=10V) and P-Channel (-40V/-40A, RDS(ON)=16m Typ. @ VGS=-10V) configurations. It offers fast switching speed, low gate charge, and ESD protection, making it suitable for load ...
power management MOSFET Siliup SP010N03AGHTO with 100V drain source voltage and low RDS on resistance
Product Overview The SP010N03AGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested ...
Siliup SP11M65TG 650V MOSFET Featuring Low Gate Charge and High Avalanche Energy Rating for Power Supplies
Product Overview The SP11M65TG is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-efficiency power applications. It features fast switching speeds, low gate charge, and a low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy. Ideal ...
Shenzhen ruichips Semicon RU3091M N Channel Power MOSFET with ultra low on resistance and fast switching speed
Product OverviewThe RU3091M is an N-Channel Advanced Power MOSFET designed for high-efficiency power applications. It features a super high dense cell design, ultra-low on-resistance, and fast switching speeds, making it ideal for DC/DC converters, load switches, and synchronous rectification. This ...
Low gate charge and fast switching MOSFET Siliup SP4407P8 30V P Channel for uninterruptible power supplies
Product Overview The SP4407P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The ...
Siliup SP40N01AGNP N Channel MOSFET 40V Featuring Low Gate Charge and Cu Clip Process for Power Management Systems
Product Overview The SP40N01AGNP is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing a Cu-Clip process and advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche ...
Low RDSon 150V P Channel MOSFET Siliup SP015P45GTQ Suitable for Power Management and DC DC Converter Applications
Product Overview The SP015P45GTQ is a 150V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ...
power transistor Shenzhen ruichips Semicon RU40L10L featuring low on resistance and high avalanche capability
Product OverviewThe RU40L10L is a P-Channel Advanced Power MOSFET from Ruichips Semiconductor. It features a -40V drain-source voltage, -32A continuous drain current, and low on-state resistance (RDS(ON)) of 20m typ. at VGS=-10V. This MOSFET is designed with a super high dense cell structure, ESD ...
100V P Channel MOSFET Siliup SP010P36GTH Featuring Fast Switching and Low RDSon for Power Management
Product Overview The SP010P36GTH is a 100V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% single pulse avalanche energy tested and is suitable ...
Power Switching MOSFET Siliup SP30N02AGNK 30V N Channel Device with Low RDSon and High Avalanche Energy Rating
Product Overview The SP30N02AGNK is a 30V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable ...
120V N Channel Power MOSFET with Low RDSon and Low Gate Charge Siliup SP012N03BGHTD in TO263 Package
Product Overview The SP012N03BGHTD is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for high-speed power switching applications, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). Its features include low reverse transfer capacitances ...
ROHS Compliant P Channel MOSFET Siliup SP30P08NK 30V Device with 100 Percent Single Pulse Avalanche Energy Test
Product Overview The SP30P08NK is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-performance applications, it features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. This device has undergone 100% Single Pulse avalanche ...
Siliup SP60N30TH 60V N Channel MOSFET featuring fast switching and low RDS on at 4.5V for power switching
Product Overview The SP60N30TH is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) at various gate voltages (30m @ 10V, 40m @ 4.5V). This MOSFET is 100% tested for single pulse avalanche energy. It is suitable for DC-DC ...
Shenzhen ruichips Semicon RU7080L Power MOSFET Featuring Ultra Low On Resistance and Application
RU7080L N-Channel Advanced Power MOSFET The RU7080L is an N-Channel Advanced Power MOSFET featuring a super high dense cell design and ultra-low on-resistance. It is 100% avalanche tested and available in lead-free and green devices (RoHS compliant). This MOSFET is designed for applications ...
Power MOSFET N Channel 120V Siliup SP012N07GHNK with Low Rdson and Single Pulse Avalanche Energy Tested
Product Overview The SP012N07GHNK is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching, low gate charge, and low Rdson. It is ideal for power switching applications, battery management ...
Power management MOSFET Siliup SP1012CNK featuring fast switching speeds and PDFN5X6 8L package design
Product Overview The SP1012CNK is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management applications. It features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. The device is 100% Single Pulse ...
Power MOSFET 120V N Channel Siliup SP012N09GHTH with Low On Resistance and Avalanche Energy Protection
Product Overview The SP012N09GHTH is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching, low gate charge, and low RDS(on). It is designed for power switching applications, battery ...
