Single FETs, MOSFETs
Lead free complementary MOSFET Siliup SP4012CP8 40V surface mount device designed for battery protection
Product Overview The SP4012CP8 is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this lead-free, surface-mount device is ideal for battery protection, load switching, and power management applications. It features 100% single...
Surface Mount N Channel MOSFET Siliup SP2002KT3 with 20V Drain Source Voltage and Enhanced Protection
Product Overview The SP2002KT3 is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capability in a surface mount package, with ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC ...
Gallium Nitride GaN FET Renesas TP65H100G4PS 650V TO220 Package for High Speed Power Circuits
Product OverviewThe TP65H100G4PS is a 650V, 92m Gallium Nitride (GaN) FET utilizing Renesass Gen IV platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, offering enhanced reliability and performance. The Gen IV SuperGaN platform leverages advanced ...
High Voltage Silicon Carbide MOSFET SG2M040120LH with Low Reverse Recovery Charge and TO 247 Package
Product Overview The SG2M040120LH is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, fully controllable dv/dt, and high blocking voltage with low on-resistance. The device features a fast ...
1200V S1M075120D2 SiC Power MOSFET with IGBT Compatible Driving Voltage and Low Reverse Recovery Qrr
Product Overview The S1M075120D2 is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage, and fully controllable dv/dt, combined with high blocking voltage and low on-resistance. The integrated ...
Low On Resistance Silicon N Channel Power MOSFET RENESAS RJK0851DPB-00J5 80V 20A with LFPAK Package
Renesas RJK0851DPB - 80V, 20A Silicon N Channel Power MOS FETThe Renesas RJK0851DPB is a high-performance Silicon N Channel Power MOS FET designed for power switching applications. It features high-speed switching, low on-resistance, and is capable of 4.5V gate drive with low drive current. Its ...
Power Switching MOSFET RENESAS 2SK1317-E with 1500V Drain to Source Voltage and High Speed Switching
Product OverviewThe 2SK1317 is a Silicon N Channel MOS FET designed for high-speed power switching applications. It features a high breakdown voltage of 1500V, low drive current, and no secondary breakdown, making it suitable for switching regulators, DC-DC converters, and motor drivers.Product ...
rugged P Channel MOSFET Shenzhen ruichips Semicon RU20P7C optimized for load switching applications
Product DescriptionThe RU20P7C is a P-Channel Advanced Power MOSFET designed for efficient power management applications. It features low on-resistance, a super high-density cell design, and is reliable and rugged. This device is suitable for load switching, power management, and battery protection ...
AEC Q101 qualified P channel MOSFET RENESAS NP100P04PDG E1 AY with high current switching capability
Product OverviewThe NP100P04PDG is a P-channel MOS Field Effect Transistor designed for high current switching applications. It offers super low on-state resistance and low input capacitance, making it suitable for automotive applications and is AEC-Q101 qualified. This product is Pb-free.Product ...
Complementary MOSFET device Siliup SP1049CP8 with 100V drain source voltage and SOP8L lead free package
Product Overview The SP1049CP8 is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead...
Low RDS ON Power MOSFET Shenzhen ruichips Semicon RU8205C6 N Channel for Power Management Applications
Product OverviewThe RU8205C6 is a N-Channel Advanced Power MOSFET featuring a super high dense cell design for low RDS(ON) and reliable performance. It is available in lead-free and green devices (RoHS compliant) and is suitable for power management applications.Product AttributesBrand: Ruichips ...
power MOSFET Siliup SP60N06HTH 60V N Channel with fast switching and low gate charge characteristics
Product Overview The SP60N06HTH is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching, low gate charge, and low RDS(on) for optimal performance. This MOSFET is 100% tested for single pulse avalanche energy, making ...
650V 150m GaN FET Renesas TP65H150BG4JSG-TR Gen IV SuperGaN Gallium Nitride Semiconductor Device
Product OverviewThe TP65H150BG4JSG is a 650V, 150m Gallium Nitride (GaN) FET, a normally-off device utilizing Renesas's Gen IV platform. It integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET for enhanced reliability and performance. The Gen IV SuperGaN platform leverages advanced ...
Durable Siliup SP30N02NK 30V N Channel MOSFET RoHS Compliant Halogen Free for industrial electronics
Product Overview The SP30N02NK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds and a surface mount PDFN5X6-8L package. This RoHS Compliant & Halogen-Free component is 100% Single Pulse avalanche energy ...
RENESAS NP50P06KDG E1 AY P channel MOSFET transistor designed for high current switching in automotive
Product OverviewThis P-channel MOS Field Effect Transistor, the NP50P06KDG, is designed for high current switching applications, particularly in the automotive sector. It features super low on-state resistance and low input capacitance, making it suitable for demanding automotive applications. The ...
Power Electronics Silicon Carbide MOSFET Siliup SP52N120CTK 1200V with RoHS Compliance and Simple Driving Characteristics
Product Overview The SP52N120CTK is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high-speed switching with low capacitances, high blocking voltage with low RDS(on), and is designed for easy paralleling and simple driving. It is RoHS compliant ...
Low Gate Charge 650V GaN FET RENESAS TP65H150G4PS Featuring Gen IV SuperGaN Platform in TO220 Package
Product OverviewThe TP65H150G4PS is a 650V, 150m Gallium Nitride (GaN) FET in a TO-220 package, featuring a normally-off, cascode device structure. It combines advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies for superior reliability and performance. Leveraging the Gen IV ...
Shenzhen ruichips Semicon RU75N08R N Channel Power MOSFET with 75V Drain Source Voltage and Avalanche Rating
Product OverviewThe RU75N08 is an N-Channel Advanced Power MOSFET designed for switching applications. It features ultra-low on-resistance, exceptional dv/dt capability, fast switching, and is fully avalanche rated. With a 175C operating temperature and lead-free/green availability, it is suitable ...
Power Management 30V P Channel MOSFET Siliup SP30P08NJ with Fast Switching and Avalanche Energy Testing
Product Overview The SP30P08NJ is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for applications requiring fast switching speeds and low on-resistance, this MOSFET features 100% single pulse avalanche energy testing. It is suitable for DC-DC converters and power ...
Power mosfet 30 volt n channel siliup sp30n02agth designed for battery management and power switching
Product Overview The SP30N02AGTH is a 30V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for ...
