Single FETs, MOSFETs
Shenzhen ruichips Semicon RU40120S Power MOSFET with 100 Percent Avalanche Tested and RoHS Compliant
Product OverviewThe RU40120S is an N-Channel Advanced Power MOSFET from Ruichips Semiconductor, designed for high-efficiency power applications. It features a Super High Dense Cell Design, ultra-low on-resistance (RDS(ON) = 3.5m Typ. @ VGS=10V), and 100% avalanche tested. This device is suitable for ...
TO2474L Package Silicon Carbide FET 750V 11m Qorvo UJ4SC075011K4S Ideal for Replacement of Si IGBTs
UJ4SC075011K4S: 750V, 11m G4 SiC FET Product Overview The UJ4SC075011K4S is a 750V, 11m G4 Silicon Carbide (SiC) FET. It utilizes a unique cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device. This design offers standard gate-drive ...
Silicon N Channel Power MOSFET RENESAS RJK0651DPB-00 J5 60V 25A Pb free halogen free power switching
RJK0651DPB 60V, 25A, 14m max. Silicon N Channel Power MOS FET The RJK0651DPB is a high-speed switching Silicon N Channel Power MOS FET designed for power switching applications. It features a low on-resistance, capable of 4.5V gate drive, and low drive current, making it suitable for high-density ...
High Voltage Silicon Carbide MOSFET SG2M021120LH with Low Switching Losses and Enhanced Power Density
Product Overview The SG2M021120LH is a 1200V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. This N-channel enhancement mode MOSFET offers high-speed switching, very low switching losses, and fully controllable dv/dt. It features high blocking voltage with low on...
Silicon N Channel Power MOSFET RENESAS RJK0652DPB-00 J5 60V 35A for High Speed Switching Applications
Product OverviewThe RJK0652DPB is a 60V, 35A Silicon N Channel Power MOS FET designed for high-speed switching applications. It features low on-resistance, low drive current, and is capable of 4.5V gate drive, making it suitable for high-density mounting. This Pb-free and halogen-free component is ...
Power MOSFET 100V N Channel Siliup SP010N02GHTO with Fast Switching and Low Drain Source On Resistance
Product Overview The SP010N02GHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, DC-DC converters, and power management systems. This MOSFET has ...
Low On State Resistance P channel Power MOS FET RENESAS NP36P04SDG E1 AY with AEC Q101 Qualification
Product OverviewThis P-channel Power MOS FET is designed for high current switching applications, offering super low on-state resistance and low input capacitance. It is specifically designed for automotive applications and is AEC-Q101 qualified. The product is Pb-free, meaning it does not contain ...
Silicon Carbide Power MOSFET SGKS KM040120-R Designed for Enhanced Efficiency and Thermal Management
Product OverviewThis Silicon Carbide Power MOSFET features high breakdown voltage and low on-resistance, enabling high switching speeds and low capacitance. It includes a fast-recovery body diode with low reverse recovery charge. Designed for enhanced system efficiency, reduced thermal requirements, ...
40V N Channel MOSFET Siliup SP40N01GTO with Fast Switching and Single Pulse Avalanche Energy Testing
Product Overview The SP40N01GTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard switched, and high...
Dual N Channel Power MOSFET Shenzhen ruichips Semicon RU30D20M3 with Rugged Construction and Avalanche Tested
Product OverviewThe RU30D20M3 is a Dual N-Channel Advanced Power MOSFET designed for switching applications. It features Ruichips' advanced TrenchTM technology, offering excellent QgxRDS(on) product (FOM), reliability, and ruggedness. This device is 100% avalanche tested and available in lead-free ...
N Channel Power MOSFET Shenzhen ruichips Semicon RU7080S R with 75A Diode Continuous Forward Current
Product OverviewThe RU7080S is an N-Channel Advanced Power MOSFET designed for high-performance applications. It features ultra-low on-resistance, fast switching speeds, and a high operating temperature of 175C, making it suitable for demanding environments. This device is 100% avalanche tested and ...
N Channel Power MOSFET Shenzhen ruichips Semicon RU8205G with lead free and green certifications
RU8205G N-Channel Advanced Power MOSFETThe RU8205G is a N-Channel Advanced Power MOSFET designed for power management applications. It features a Super High Dense Cell Design for enhanced performance, offering reliable and rugged operation. This MOSFET is available in lead-free and green options...
100V N Channel MOSFET Siliup SP010N02LGHTO with Low Rdson and Single Pulse Avalanche Energy Testing
Product Overview The SP010N02LGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching, low gate charge, and low Rdson, enabled by advanced split gate trench technology. This MOSFET is 100% tested for ...
Dual P Channel Enhancement Mode MOSFET PJSEMI PJM05DP20DFA Ideal for Load Switching and PWM Circuits
Product OverviewThe PJM05DP20DFA is a Dual P-Channel Enhancement Mode Power MOSFET designed for high-performance applications. It features low gate charge and a high-density cell design for ultra-low RDS(on), making it suitable for PWM applications, load switching, and power management. This device ...
Shenzhen ruichips Semicon RU30C8H complementary N channel and P channel power MOSFET for load switch
Product OverviewThe RU30C8H is a complementary advanced power MOSFET featuring N-Channel and P-Channel devices. It offers reliable and rugged performance with ESD protection, making it suitable for load switch applications. Available in lead-free and green (RoHS compliant) versions.Product ...
N Channel MOSFET Siliup SP010N07AGNK Featuring Low Gate Charge and High Avalanche Energy Capability
Product Overview The SP010N07AGNK is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is designed for power switching applications, battery ...
1200V Power MOSFET Silicon Carbide Sichainsemi S1M007120PD for Solar Power Optimizers and Inverters
Product Overview The S1M007120PD is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, high blocking voltage with low on-resistance, and temperature-independent turn-off switching losses. This MOSFET is halogen-free and ...
N Channel Enhancement Mode MOSFET PJSEMI PJM2306NSA designed for load switching and power management
Product OverviewThe PJM2306NSA is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications like PWM, load switching, and power management. The device comes in a compact SOT-23 ...
power management component PJSEMI PJM2300NSA-L N Channel Enhancement Mode Power MOSFET for switching
Product OverviewThe PJM2300NSA-L is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It offers excellent RDS(ON) and low gate charge, making it suitable for applications such as DC/DC converters and load switches for portable devices. This MOSFET is packaged in a ...
N Channel Enhancement Mode Power MOSFET PJSEMI PJMG10H25NDL with 100V VDS and 24A Continuous Current
Product OverviewThe PJMG10H25NDL is an N-Channel Enhancement Mode Power MOSFET designed for load switching, PWM applications, and power management. It features advanced Split Gate Trench Technology, 100% avalanche testing, and is RoHS compliant, halogen and antimony free. This MOSFET offers a VDS of ...
