Single FETs, MOSFETs
Silicon Carbide FET UJ4C075033K3S 750V 33mW TO2473L Package Suitable for EV Charging and Motor Drives
Product Overview The UJ4C075033K3S is a 750V, 33mW G4 Silicon Carbide (SiC) FET, featuring a unique cascode circuit configuration that combines a normally-on SiC JFET with a Si MOSFET to create a normally-off device. This design offers standard gate-drive characteristics, making it a direct ...
Low RDS ON Dual N Channel Power MOSFET PJSEMI PJM03DN20DFA with 20 Volt Maximum Drain Source Voltage
Product OverviewThe PJM03DN20DFA is a Dual N-Channel Enhancement Mode Power MOSFET designed for efficient switching applications. It features low On-Resistance (RDS(ON)) and comes in a small surface mount package, making it suitable for compact electronic designs. With a VDS of 20V and ID of 3.6A, ...
Power MOSFET PJSEMI PJMG40P60TE P Channel Type with 150 Degree Celsius Maximum Junction Temperature
Product OverviewThe PJMG40P60TE is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Split Gate Trench Technology. It is designed for battery switching applications and hard switched, high-frequency circuits, offering robust performance with 100% avalanche testing. This RoHS and Reach ...
N Channel Enhancement Mode Power MOSFET PJSEMI PJM03N10SQ designed for fast switching and dissipation
Product OverviewThe PJM03N10SQ is an N-Channel Enhancement Mode Power MOSFET designed for efficient power switching. It features fast switching speeds, low reverse transfer capacitance, and low gate charge, making it suitable for load switching and PWM applications. With a VDS of 100V and ID of 3A, ...
Power MOSFET PJSEMI PJM3415PSA Silicon P Channel with 20 Volt Drain Source Voltage and SOT 23 Package
Product OverviewThe PJM3415PSA is a Silicon P-Channel Power MOSFET designed for load switching and PWM applications. It features low gate charge and RDS(on), along with ESD protection up to 2KV (HBM). This MOSFET is packaged in a SOT-23 (TO-236) package.Product AttributesBrand: PingjingsemiMaterial: ...
AEC Q101 certified automotive P channel MOSFET RENESAS NP50P04SDG E1 AY with low on state resistance
Product OverviewThis P-channel MOS Field Effect Transistor (NP50P04SDG) is designed for high current switching applications, particularly in the automotive sector. It offers super low on-state resistance and low input capacitance, making it suitable for demanding automotive applications. The product ...
Power MOSFET PJSEMI PJM90H09NTF N Channel Enhancement Mode with TO 220F Package and High Voltage Capability
PJM90H09NTF N-Channel Enhancement Mode Power MOSFET The PJM90H09NTF is an N-Channel Enhancement Mode Power MOSFET designed for power switch circuits in adaptors and chargers. It features fast switching, low reverse transfer capacitances, and high voltage capability (VDS=900V) with a continuous drain ...
P Channel Enhancement Mode Power MOSFET PJSEMI PJMG60P60TE Featuring 60 Amp Continuous Drain Current
PJMG60P60TE P-Channel Enhancement Mode Power MOSFET The PJMG60P60TE is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Split Gate Trench Technology. It is 100% avalanche tested and RoHS compliant, making it a Halogen and Antimony Free component. This MOSFET is designed for applications ...
30m 650V GaN transistor RENESAS TP65H030G4PQS-TR for PV inverters and uninterruptible power supplies
Product OverviewThe TP65H030G4PQS is a 650V, 30m Gallium Nitride (GaN) FET from Renesas' Gen IV plus platform. This normally-off device integrates a high-voltage GaN HEMT with a low-voltage silicon MOSFET, offering superior performance, standard drive compatibility, and enhanced reliability. Its ...
power management solution featuring PJSEMI PJM07P30SC P Channel Enhancement Mode Power MOSFET with low RDS
Product OverviewThe PJM07P30SC is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management applications. It features a high-density cell design for low RDS(ON), making it suitable for load switching, battery protection, and power management tasks. Available in a compact SOT...
power MOSFET PJSEMI PJM09P20SC P Channel Enhancement Mode for load switch and power management needs
Product OverviewThe PJM09P20SC is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for load switch, PWM application, and power management. This RoHS and Reach compliant, Halogen and Antimony Free component offers low on-resistance and is suitable for ...
SiC FET Device With Normally Off Operation Qorvo UJ3C120080K3S Suitable for Switching Inductive Loads
SiC FET Device - UJ3C120080K3S Product Overview This 1200V-80mW SiC FET device features a unique cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics allow for a direct replacement for Si IGBTs, Si ...
P J S E M I P J M 0 5 P 3 0 P A P Channel Power MOSFET Designed for Power Management and Switching
Product OverviewThe PJM05P30PA is a P-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low RDS(on) through advanced trench technology. It is suitable for PWM applications, load switching, and power management scenarios, featuring a VDS of -30V and an ...
PIELENST AO3415A-L P Channel MOSFET with Low On State Resistance and Robust Absolute Maximum Ratings
Product OverviewThe AO3415A-L is a P-Channel MOSFET designed for various applications. It offers key features such as low on-state resistance and robust absolute maximum ratings, making it suitable for power management solutions.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: ...
Low gate charge 650V N channel MOSFET PIP PTA05N65 ideal for SMPS standby power adaptors and charger applications
Product OverviewThe PTA05N65 is a 650V N-channel Planar MOSFET designed for various power applications. It offers low gate charge for minimized switching loss and a fast recovery body diode. Key features include RoHS compliance and a typical RDS(ON) of 1.85 at VGS=10V. This device is suitable for ...
Power Management P Channel MOSFET PJSEMI PJM2309PSA with Halogen Free and Low On Resistance Features
Product OverviewThe PJM2309PSA is a P-Channel Power MOSFET designed for efficient power management applications. It features a -60V drain-source voltage, -2.0A continuous drain current, and a low on-resistance of 200m (max) at -10V. This device is halogen and antimony-free, making it suitable for ...
Power MOSFET PJSEMI PJM08C30PA N Channel and P Channel Complementary Device for Electronic Circuits
Product OverviewThe PJM08C30PA is a N and P-Channel Complementary Power MOSFET designed for power management applications. It offers low on-resistance, low input capacitance, and fast switching speeds, making it suitable for various electronic circuits requiring efficient power control.Product ...
Load Switching and Power Management Device PJSEMI PJM15P40TE P Channel MOSFET with Low On Resistance
Product OverviewThe PJM15P40TE is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for applications such as Load Switching, PWM, and Power Management. Key advantages include 100% Avalanche Tested, RoHS Compliance, and being Halogen and Antimony Free. ...
PJSEMI PJM4601DPSG S Dual P Channel MOSFET for Power Management Load Switching and Battery Protection
Product OverviewThe PJM4601DPSG-S is a Dual P-Channel Enhancement Mode Power MOSFET designed for surface mounting. It offers high power and current handling capabilities, making it suitable for load switching, battery protection, and power management applications. This component is halogen and ...
Low RDS ON P Channel MOSFET PIELENST SI2333DS-L with Moisture Sensitivity Level 1 and RoHS Compliance
Product OverviewThe SI2333DS-L is a P-Channel MOSFET designed for various applications. It features low RDS(ON), meets UL 94 V-0 flammability rating, and is Moisture Sensitivity Level 1 compliant. Available in a lead-free finish and RoHS compliant, it offers an operating junction temperature range ...
