Single FETs, MOSFETs
Electronic Component PJSEMI PJM60H12MNSA N Channel MOSFET Featuring 600V Drain Source Voltage Rating
Product OverviewThe PJM60H12MNSA is an N-Channel Depletion Mode MOSFET designed for various electronic applications. It offers improved ESD capability, RoHS and Reach compliance, and is halogen and antimony free. This MOSFET is characterized by its high breakdown voltage (600V) and low on-resistance...
PANJIT PJA3405 AU R1 000A1 P Channel MOSFET 30V designed for PWM and switch load electronic circuits
PPJA3405-AU 30V P-Channel Enhancement Mode MOSFET The PPJA3405-AU is a 30V P-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, AEC-Q101 qualification, and compliance with EU RoHS 2.0. This MOSFET offers low on-resistance ...
Low RDS on P Channel MOSFET PJSEMI PJM05P40SA Featuring RoHS Reach Compliance and Halogen Antimony Free Material
Product OverviewThe PJM05P40SA is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is RoHS and Reach Compliant, and Halogen and Antimony Free, making it suitable for various load switch, PWM, and power management applications. This device offers a VDS of -40V and an ...
High Reliability Power MOSFET PJSEMI PJM15N60DF with Compact DFN2x2 6L Package and 15A Drain Current
Product OverviewThe PJM15N60DF is an N-Channel Enhancement Mode Power MOSFET designed for efficient power switching. It features low gate charge and low on-resistance (RDS(ON)), making it suitable for applications like load switching and PWM control. With a VDS of 60V and ID of 15A, it offers a ...
N Channel Enhancement Mode Power MOSFET PAKER SI2312 with Ultra Low On Resistance in SOT 23 Package
Product OverviewThe SI2312 is an N-Channel Enhancement Mode Power MOSFET in a SOT-23 package. It features a high-density cell design for ultra-low on-resistance and is manufactured using advanced trench process technology. This MOSFET is halogen-free and RoHS compliant, making it suitable for ...
Low On Resistance 30V P Channel Enhancement Mode MOSFET Panjit PJE8405 R1 00001 with ESD Protection
Product OverviewThe PPJE8405 is a 30V P-Channel Enhancement Mode MOSFET with ESD protection. It features low on-state resistance at various gate-source voltages and is manufactured using advanced trench process technology. This MOSFET is specifically designed for switch load and PWM applications. It ...
Surface Mount SOT23 Package PIELENST SI2302-L TrenchFET Power MOSFET for DC DC Converter Applications
Product OverviewThe SI2302-L is a TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It features a lead-free product acquisition and is available in a surface mount SOT23 package. Key advantages include its high performance and reliability.Product Attributes...
P Channel Enhancement Mode Power MOSFET Paker SI2333 with Ultra Low On Resistance and SOT 23 Package
SI2333 P-Channel Enhancement Mode Power MOSFET The SI2333 is a P-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It features advanced trench process technology and is housed in a SOT-23 small outline plastic package. This MOSFET is ...
1700V Silicon Carbide FET Qorvo UF3C170400K3S designed for power conversion and inductive load switching
UnitedSiC UF3C170400K3S SiC FET Product Overview The UnitedSiC UF3C170400K3S is a 1700V, 410mW Silicon Carbide (SiC) FET device designed for high-efficiency power conversion applications. It features a unique cascode circuit configuration combining a normally-on SiC JFET with a Si MOSFET, resulting ...
PJM2319PSA P Enhancement Field Effect Transistor Engineered for Low On Resistance and Power Management
PJM2319PSA P-Enhancement Field Effect Transistor The PJM2319PSA is a P-Enhancement Mode Field Effect Transistor designed for fast switching and ultra-low Qgd. It features a low RDS(on) of 80 m @VGS= -10V, making it suitable for applications such as Load Switches and DC/DC Converters. Product ...
Low on state resistance PIELENST AO3415-L P Channel MOSFET suitable for power management applications
Product OverviewThe AO3415-L is a P-Channel MOSFET designed for various applications. It offers key electrical characteristics such as low on-state resistance and specified breakdown voltage, making it suitable for power management tasks.Product AttributesBrand: SZPIELENSTPackage: SOT23Technical ...
Low RDS ON PIELENST SI2333CDS-L P Channel MOSFET with Lead Free RoHS Compliance and Halogen Free Option
Product Overview The SI2333CDS-L is a P-Channel MOSFET designed for various applications. It features low RDS(ON), meets UL 94 V-0 flammability rating, and is Moisture Sensitivity Level 1 compliant. This product is Halogen Free available upon request and Lead Free/RoHS Compliant. Product Attributes ...
High voltage silicon carbide fet Qorvo UJ4C075033B7S featuring cascode technology and low gate charge
Product Overview The UJ4C075033B7S is a 750V, 33mW G4 SiC FET designed for high-performance switching applications. It features a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. This device offers standard gate-drive ...
Dual N Channel Enhancement Mode MOSFET PJSEMI PJM05DN60PA with 5 Amp Drain Current and 60 Volt Voltage Rating
Product OverviewThe PJM05DN60PA is a Dual N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, featuring an advanced trench technology for ultra-low RDS(on). It is suitable for PWM applications, load switching, and power management systems, offering a VDS of 60V and ...
N Channel Power MOSFET PJSEMI PJM60H02NTE with Continuous 2A Drain Current and TO 252 Package Design
Product OverviewThe PJM60H02NTE is an N-Channel Enhancement Mode Power MOSFET designed for power switch circuits in adaptors and chargers. It offers fast switching, low gate charge, and low RDS(on), making it an efficient component for these applications. Key features include a high Drain-Source ...
Dual N Channel Enhancement Mode Power MOSFET PJSEMI PJM9926ANPA for Power Switching Applications
Product OverviewThe PJM9926ANPA is a Dual N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is designed for power switching applications, including hard switched and high frequency circuits, and uninterruptible power supplies. This RoHS and Reach compliant component is ...
Low Gate Threshold Voltage 100V N Channel MOSFET PANJIT PJW5N10 with RoHS 2 Compliant Green Compound
Product OverviewThe PPJW5N10 is a 100V N-Channel Enhancement Mode MOSFET designed for various applications. It features low on-resistance, low input capacitance, and is compliant with EU RoHS 2.0 and uses a green molding compound. This MOSFET is suitable for applications requiring efficient power ...
Energy P channel enhancement mode power mosfet PJSEMI PJM84PSA with miniature surface mount sot 23 package
Product OverviewThe PJM84PSA is a P-Channel Enhancement Mode Power MOSFET designed for energy-efficient applications. It features low threshold voltage, high-speed switching, and ESD protection up to 2KV. Its miniature surface mount package saves board space, making it suitable for PWM applications, ...
Silicon Carbide Field Effect Transistor Qorvo UJ4SC075006K4S 750V 5.9mW Ultra Low On Resistance Device
UnitedSiC UJ4SC075006K4S: 750V, 5.9mW SiC FET The UJ4SC075006K4S is a 750V, 5.9mW Silicon Carbide (SiC) Field-Effect Transistor (FET) designed for high-performance power applications. This device utilizes a unique 'cascode' circuit configuration, integrating a normally-on SiC JFET with a low-voltage ...
Power Switching MOSFET PJSEMI PJM10H06NSQ featuring Low Gate Charge and RDSon below 140 milliohm at VGS 10V
Product OverviewThe PJM10H06NSQ is an N-Channel Enhancement Mode Power MOSFET featuring excellent RDS(on) and low gate charge. It is designed for power switching applications, including Uninterruptible Power Supplies. With a VDS of 100V and ID of 6A, it offers RDS(on) < 140m @VGS=10V.Product ...
