Single FETs, MOSFETs
High Reliability P Channel MOSFET GL GL8P04 Featuring Low Gate Charge and RoHS Compliance
Product Overview The GL8P04 is a P-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including power switching, hard switched ...
Voltage Controlled Small Signal Switch GOODWORK AO3407 Offering Performance And Low RDS On Resistance
Product OverviewThe AO3407 is a voltage-controlled small signal switch with a high-density cell design for low RDS(ON). It offers ruggedness, reliability, and high saturation current capability, making it suitable for various applications requiring efficient switching.Product AttributesBrand: ...
Power Switching Silicon N Channel MOSFET GL GL18N25A4 Featuring TO 252 Package and RoHS Compliance
Product Overview The GL18N25A4 is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for various power switching circuits, contributing to ...
SOP8 Package N Channel MOSFET GL GL8N04-8 with Ultra Low Rdson and High Avalanche Voltage Capability
Product Overview The GL8N04-8 is an N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for high-density cell applications, it offers ultra-low Rdson and is fully characterized for ...
Load Switch MOSFET GL GL5N04 Featuring Low Reverse Transfer Capacitance and High Pulsed Drain Current Capability
Product Overview The GL5N04 is a Silicon N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for a wide variety of applications including PWM applications, load switches, and power ...
Low RDS ON N Channel Transistor GOODWORK AO3400 Designed for Switching and High Current Applications
Product OverviewThe AO3400 is an N-Channel Enhancement Mode Field Effect Transistor designed with a high-density cell structure for low RDS(ON). It functions as a voltage-controlled small signal switch, offering ruggedness, reliability, and high saturation current capability. This transistor is ...
SOP 8 Package N Channel MOSFET GL GL3010-8 with 100 Percent Single Pulse Avalanche Energy Testing
Product Overview The GL3010-8 is a N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide range of applications, it offers fast switching, low gate charge, low RDS(ON), low reverse ...
Power Switching Silicon N Channel VDMOSFET GL GL25N40A8 Featuring Low Gate Charge and TO 220 Package
Product Overview The GL25N40A8 is a high-performance Silicon N-Channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This advanced design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy capabilities, making it ideal for ...
switching MOSFET GREENMICRO GM4N65GT suitable for bridge circuits and PWM motor control applications
Product OverviewThe 4N65 is a high voltage MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is suitable for use in power supplies, ...
Power Switching N Channel MOSFET GL GL150N03AD Featuring Low Rdson and RoHS Compliant QFN56 Package
Product Overview The GL150N03AD is a N-Channel Power MOSFET from GL Silicon, manufactured by Wuxi Guang Lei Electronic Technology Co., LTD. It utilizes advanced trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications ...
Power Switching P Channel MOSFET GL GL9Z24A8 Featuring Low Rdson and RoHS Compliant TO 220AB Package
Product Overview The GL9Z24A8 is a P-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide variety of applications, it offers fast switching, low gate charge, low Rdson, low reverse ...
Transistor SOT23 Package FUXINSEMI 2SK3018 N Channel MOSFET with Technical Specifications
SOT-23 Package InformationThis document provides detailed dimensional specifications for the SOT-23 package.Technical SpecificationsSymbolDimensions In MillimetersDimensions In InchesMin.Max.Min.Max.A0.9001.1500.0350.045A10.0000.1000.0000.004A20.9001.0500.0350.041b0.3000.5000.0120.020c0.0800.1500...
Power Management N Channel SMD MOSFET FUXINSEMI FS2302A Featuring Advanced Trench Process Technology
Product OverviewThe FS2302A is an N-Channel SMD MOSFET featuring an advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for load switching in portable devices and DC/DC converters, offering efficient power management.Product AttributesBrand: ...
30 Volt 4 2 Amp P Channel MOSFET FUXINSEMI AO3401A Transistor SOT 23 Package Component
2411220305_FUXINSEMI-AO3401A_C5380686.pdf
Load Switching N Channel MOSFET FUXINSEMI FS2312 with High Density Cell Design and Low On Resistance
Product OverviewThe FS2312 is an N-Channel SMD MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for load switching in portable devices and DC/DC converters.Product AttributesBrand: Fuxin SemiconductorOrigin: China (implied ...
Power semiconductor device FUXINSEMI C2M0040120D with low on resistance and power handling capabilities
Product Overview This document details the C2M0040120D, a power semiconductor device from Fuxinsemi, designed for high-performance applications. It provides comprehensive electrical characteristics, including output characteristics, on-resistance variations with temperature and current, transfer ...
Silicon Carbide Power MOSFET N Channel Enhancement Mode FUXINSEMI C3M0016120D for power applications
Product OverviewThe C3M0016120D is a Silicon Carbide Power MOSFET with N-Channel Enhancement Mode. It is designed for high-performance power applications.Product AttributesBrand: FuxinsemiMaterial: Silicon CarbideType: N-Channel Enhancement ModeTechnical SpecificationsPart NumberDescriptionC3M001612...
Comprehensive output characteristics and on resistance versus temperature data for FUXINSEMI C2M0080120D device
Product OverviewThis document presents the output characteristics, on-resistance, 3rd quadrant characteristics, stored energy, and capacitance versus drain-source voltage for a semiconductor device. The data is presented across various junction temperatures and gate voltages, illustrating the device...
Power Semiconductor Device FUXINSEMI C2M1000170D Silicon Carbide N Channel Enhancement Mode MOSFET
Product OverviewThe C2M1000170D is a Silicon Carbide Power MOSFET featuring N-Channel Enhancement Mode. It is designed for high-performance power applications.Product AttributesBrand: Fuxin SemiconductorMaterial: Silicon CarbideTechnical SpecificationsParameterConditionsValueDrain-Source Current, ...
Compact SOT 23 N Channel MOSFET FUXINSEMI IRLML6244TRPBF FS Designed for Load Switching Applications
Product OverviewThe IRLML6244TRPBF-FS is an N-Channel SMD MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for load switching in portable devices and DC/DC converters.Product AttributesBrand: Fuxin SemiconductorPackage: ...
