Single FETs, MOSFETs
Power Switching Silicon N Channel MOSFET GL GL18N30FA9 Featuring Low Gate Charge and TO 220F Package
Product Overview The GL18N30FA9 is a silicon N-channel Enhanced VDMOSFET developed using self-aligned planar technology. This design enhances switching performance, reduces conduction losses, and improves avalanche energy. It is suitable for various power switching circuits, contributing to system ...
Power Switching N Channel MOSFET GL GL20N04A4 with Robust TO 252 Package and Low Gate Charge Design
Product Overview The GL20N04A4 is a N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for high-density cell applications, it offers an ultra-low Rdson and is fully characterized for ...
18V P channel enhancement mode MOSFET FM 2301 with ultra low on resistance and power switching capability
Product Overview18V P-channel enhancement mode MOSFET with advanced processing technology, ultra-low on-resistance, and high-density cell design. Suitable for applications requiring efficient power switching.Product AttributesBrand: SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD.Origin: ChinaDocument ...
RoHS Compliant P Channel MOSFET GL GL12P03-8 Featuring Low Gate Charge and Ultra Low RDS ON in SOP 8 Package
Product Overview The GL12P03-8 is a P-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide variety of applications, it features a high-density cell design for ultra-low Rdson and ...
Silicon N channel VDMOSFET Fortior Tech FMD5N50E5 Suitable for Miniaturized Power Switching Systems
Product OverviewThe FMD5N50E5 is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This technology enhances efficiency by reducing conduction loss, improving switching performance, and increasing avalanche energy. It is suitable for various power switching ...
ESD protected FMS Formosa Microsemi AS3415E P Channel TrenchFET MOSFET in plastic encapsulate SOT 23
Product OverviewThe AS3415E is a P-Channel TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It features ESD protection and is housed in a SOT-23 package.Product AttributesBrand: anbonsemiPackage Type: SOT-23Material: Plastic-Encapsulate MOSFETSTechnical ...
Power Switching N Channel MOSFET GL GL80N03A4 Featuring TO 252 Package and RoHS Compliance for Industrial
Product Overview The GL80N03A4 is a high-performance N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD. Engineered with advanced trench technology, it delivers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, hard ...
High Density Cell P Channel MOSFET GL GL3401K with RoHS Compliance and Advanced Trench Technology
Product Overview The GL3401K is a P-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide range of applications, it features a high-density cell design for ultra-low Rdson and is ...
Low Gate Charge N Channel MOSFET GL GL6009AS 8 Suitable for Hard Switched and High Frequency Circuits
Product Overview The GL6009AS-8 is an N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide variety of applications, it features fast switching, low gate charge and Rdson, low ...
252 Package N Channel Power MOSFET GL GL80N06A4 with RoHS Compliance and High Density Cell Design
Product Overview The GL80N06A4 is a N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for high-density cell applications, it offers ultra-low Rdson and is fully characterized for ...
N channel MOSFET transistor FUXINSEMI AO3400A 30V 5.8A SOT23 package electronic component
Product OverviewThe AO3400A is a high-performance N-channel MOSFET designed for various electronic applications. It offers excellent efficiency and reliability.Product AttributesBrand: AOOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical Specificat...
power control FUXINSEMI AO3404A N channel MOSFET with 5.7A current rating and 2.5V gate threshold voltage
Product OverviewThe AO3404A is a high-performance N-channel MOSFET designed for various electronic applications. Its robust construction and efficient operation make it suitable for power management and switching tasks.Product AttributesBrand: AOOrigin: Not specifiedMaterial: Not specifiedColor: Not ...
power switching solution ElecSuper ESN7466 N Channel MOSFET with low gate charge and excellent RDS
Product OverviewThe ESN7466 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This product is Pb-free and Halogen free.Product AttributesBran...
Power Management N Channel Trench MOSFET FM 3060K Featuring Low Gate Charge and High Current Handling
Product OverviewThe 3060K is an N-Channel Trench Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 5V. This device is suitable for a wide variety of applications including PWM applications, load switches, and ...
Power MOSFET FM 40S13 Featuring Ultra Low RDS ON Suitable for Wireless Chargers and DC DC Converters
Product OverviewThe 40S13 is an N-Channel Trench Power MOSFET from Fine Made Microelectronics Group Co., Ltd. It features a high-density cell design for ultra-low RDS(ON), making it suitable for DC/DC converters, wireless chargers, and synchronous rectification applications. Lead-free and green ...
Low RDS ON N Channel Trench MOSFET FM TC736 Ideal for Power Management and Load Switch Applications
Product OverviewThe TC736 is an N-Channel Trench Power MOSFET designed for power management and load switch applications. It features low RDS(ON), super high dense cell design, and is reliable and rugged. Lead-free and green devices are available, complying with RoHS standards.Product AttributesBran...
Low gate charge ElecSuper AO4884 N channel MOSFET designed for power switching and charging circuits
AO4884 SuperMOS SOP8 N-channel MOSFETThe AO4884 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for superior RDS(ON) and low gate charge. It is ideal for DC-DC conversion, power switching, and charging circuits, offering high density cell design, avalanche rating, and ...
Low Gate Charge Power MOSFET GL GL200N06A8 with Fast Switching and Single Pulse Avalanche Energy Test
Product Overview The GL200N06A8 is a N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology and design for excellent RDS(ON) with low gate charge. It is suitable for a wide variety of applications, including power switching, hard switched and ...
Fortior Tech FMD3N60E5 Power MOSFET featuring fast body diode and improved noise immunity for power switching
Product OverviewThe FMD3N60E5 is an N-channel Power MOSFET designed for high-efficiency applications. Its features include a fast body diode that eliminates the need for external diodes in Zero Voltage Switching (ZVS) applications, lower gate charge for simpler drive requirements, and a higher gate ...
Low Gate Charge and Fast Switching N Channel MOSFET FETek FKD6040 Suitable for Power Management Circuits
Product OverviewThe FKD6040 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function ...
