Single FETs, MOSFETs
N Channel MOSFET Siliup SP30N06P8 Featuring 30V Rating Low Gate Charge and SOP 8L Package for Switching
Product Overview The SP30N06P8 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies. The device is available in an SOP-8L package and is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: N
Power Switching MOSFET Siliup SP010N03AGHTF 100V N Channel with Low RDSon and High Current Capacity
Product Overview The SP010N03AGHTF is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is designed for power switching applications, DC-DC converters, and power management systems. It has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code:
Power MOSFET Siliup SP60N10GDP8 60V N Channel with Low On Resistance and 12A Continuous Drain Current
Product Overview The SP60N10GDP8 is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features advanced Split Gate Trench Technology for fast switching and is designed for power management and switched-mode power supply applications. The device offers a low on-state resistance (RDS(on)) of 10m at 10V and 13m at 4.5V, with a continuous drain current (ID) of 12A. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 60N10GD
Compact P Channel MOSFET Siliup SP30P30T1 with 30 Volt Drain Source Voltage and High Current Handling
Product Overview The SP30P30T1 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers a typical drain-source on-resistance of 30m at -10V gate-source voltage and -6A drain current, and 45m at -4.5V gate-source voltage and -5A drain current. Product Attributes Brand: Siliup Semiconductor Technology Co.
Siliup SP40N01GTH 40V N Channel MOSFET Offering Fast Switching Low RDS on and High Frequency Circuit
Product Overview The SP40N01GTH is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This device is ideal for PWM applications, hard-switched and high-frequency circuits, and power management solutions. It is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code:
Power MOSFET Shenzhen ruichips Semicon RU40191S-R N Channel 40V 190A for switching and power control
Product OverviewThe RU40191S is an N-Channel Advanced Power MOSFET featuring a Super High Dense Cell Design for ultra-low on-resistance. It offers a 40V/190A rating with a typical RDS(ON) of 1.8m at VGS=10V. This device is 100% avalanche tested and is available in Lead Free and Green Devices (RoHS Compliant). It is suitable for DC-DC Converters, Off-line UPS, and other switching applications.Product AttributesBrand: Ruichips Semiconductor Co., LtdCertifications: RoHS
Power MOSFET 30V N Channel Siliup SP30N01GNP with Fast Switching and Low Gate Charge Characteristics
Siliup Semiconductor SP30N01GNP: 30V N-Channel Power MOSFET The SP30N01GNP is a 30V N-Channel Power MOSFET from Siliup Semiconductor, designed for efficient power management applications. It features fast switching speeds, low gate charge, and low on-resistance (RDS(on)), making it suitable for PWM applications, hard-switched, and high-frequency circuits. The MOSFET utilizes advanced split gate trench technology and a Cu-Clip process for enhanced performance and reliability.
Power MOSFET N Channel 100V Siliup SP010N04BGNK Featuring Split Gate Trench Technology for Switching
Product Overview The SP010N04BGNK is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching speeds, low Gate Charge, and low RDS(on). This MOSFET is suitable for applications such as DC-DC Converters, Motor Control, and portable equipment. It features 100% Single Pulse avalanche energy testing for enhanced reliability. Product Attributes Brand: Siliup Semiconductor Technology
power management solution featuring Siliup SP30P03NK 30V P Channel MOSFET with fast switching speeds
Product Overview The SP30P03NK is a 30V P-Channel MOSFET designed for efficient power management. It features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for applications such as DC-DC Converters and Motor Control. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP30P03NK Package Type: PDFN5X6-8L Certifications: ROHS Compliant &
Low RDS on N Channel MOSFET Siliup SP40N01GNP 40V with Fast Switching and Cu Clip Process Technology
Product Overview The SP40N01GNP is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology and Cu-Clip process. This MOSFET is designed for PWM applications, hard switched and high frequency circuits, and power management. It has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd.
Low RDSon 100V N Channel Power MOSFET Siliup SP010N01AGHTO Designed for Hard Switched and PWM Power Circuits
Product Overview The SP010N01AGHTO is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is available in a TOLL package. Product Attributes Brand: Siliup
Compact DFN1006-3L P Channel MOSFET Siliup SP2004KNC with 20V Drain Source Voltage and 2KV ESD Protection
Product Overview The SP2004KNC is a 20V P-Channel MOSFET designed by Siliup Semiconductor Technology Co. Ltd. This surface mount device offers high power and current handling capability, making it suitable for applications such as battery switches and DC/DC converters. It features ESD protection up to 2KV and is available in a compact DFN1006-3L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: P-Channel MOSFET Package: DFN1006-3L ESD
Surface mount complementary MOSFET Siliup SP1012ACNK 100V fast switching speed ROHS compliant device
Product Overview The SP1012ACNK is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, it offers fast switching speeds and is ROHS Compliant & Halogen-Free. The device has undergone 100% single pulse avalanche energy testing. It is suitable for applications such as DC-DC converters and motor control. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP1012ACNK Type: Complementary MOSFET
High Frequency 40V N Channel Power MOSFET Siliup SP40N01ABGNP with Split Gate Trench Technology and Low Rdson Performance
Product Overview The SP40N01ABGNP is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology and a Cu-Clip process, this MOSFET offers fast switching, low gate charge, and low Rdson. It is designed for high-frequency applications and power management, including PWM applications and hard-switched circuits. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup
Power Management 30V N Channel MOSFET Siliup SP30N03BNK with Fast Switching and Surface Mount Package
Product Overview The SP30N03BNK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds and a surface mount package. This ROHS Compliant & Halogen-Free component is 100% Single Pulse avalanche energy tested, making it suitable for demanding applications such as DC-DC converters and motor control. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP30N03BNK
ROHS compliant halogen free Siliup SP3011ACNK 30V complementary MOSFET for power electronics
Product Overview The SP3011ACNK is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. This device is 100% Single Pulse avalanche energy tested and is ideal for DC-DC converters and motor control applications. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: SP3011ACNK Type: Complementary
Low On Resistance N Channel MOSFET Siliup 2N7002KT7 with 60V Drain Source Voltage and ESD Protection
Product Overview The 2N7002KT7 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. This surface mount device features ESD protection up to 2KV and is suitable for applications such as battery switches and DC/DC converters. It offers a low on-resistance of 1.7 at 10V and 1.8 at 4.5V, with a continuous drain current of 300mA. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product
SG1M160120J Silicon Carbide Power MOSFET 1200V 21A TO2637L Package with Low Reverse Recovery Charge
Product Overview The SG1M160120J is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, IGBT-compatible driving voltage (15V for turn-on), and fully controllable dv/dt. This device boasts high blocking voltage with low on-resistance, a fast intrinsic diode with low reverse recovery charge (Qrr), and temperature-independent turn-off switching losses. Its benefits include reduced cooling effort and
252 Package N Channel MOSFET Siliup SP010N35TH Featuring Low RDS on and High Drain Current for Load Switching
Product Overview The SP010N35TH is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) at different voltage levels (35m@10V, 40m@4.5V). This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and load switching. The device comes in a TO-252 package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: SP010N35
High current N Channel MOSFET Siliup SP70N07HTH 70V with low RDS on and fast switching capabilities
Product Overview The SP70N07HTH is a 70V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching capabilities, low gate charge, and a low RDS(on) of 7.5m at 10V. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: SP70N07HTH
