Single FETs, MOSFETs
Shenzhen ruichips Semicon RU6085H N Channel Power MOSFET ideal for power switch and load management
Product OverviewThe RU6085H is an N-Channel Advanced Power MOSFET featuring a super high dense cell design for ultra-low on-resistance and fast switching speeds. It is designed for power management, switch, and load switch applications. Available in lead-free and green (RoHS compliant) options.Product AttributesBrand: Ruichips Semiconductor Co., LtdCertifications: RoHS CompliantTechnical SpecificationsSymbolParameterTest ConditionUnitMin.Typ.Max.VDSSDrain-Source VoltageV60VGS
Low RDSon P Channel MOSFET Siliup SP2004KT7J Surface Mount Device for Load Switching and Portable Electronics
Product Overview The SP2004KT7J is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, this P-Channel switch features low RDS(on) and operates at low logic level gate drive. It is ESD protected and suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. The device is marked with 'KD' as its device code. Product Attributes Brand: Siliup Semiconductor
Power Electronics MOSFET Siliup SP95N65CTO Silicon Carbide 650V High Blocking Voltage
Product Overview The SP95N65CTO is a 650V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high-speed switching with low capacitances and high blocking voltage combined with low RDS(on). It is designed for easy paralleling and simple driving, making it suitable for a wide range of power electronics applications. The SP95N65CTO is RoHS compliant. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Material: Silicon
Power Management N Channel MOSFET Siliup SP010N02AGHTO 100V with Fast Switching and Low On Resistance
Product Overview The SP010N02AGHTO is a 100V N-Channel Power MOSFET from Shanghai Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is available in a TOLL package. Product Attributes Brand:
30V P Channel MOSFET Siliup SP30P08P8 with 15A continuous drain current and avalanche energy testing
Product Overview The SP30P08P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching, low gate charge, and low RDS(on) with a continuous drain current of -15A. This MOSFET is designed for power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. It features 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product
High Voltage Silicon Carbide MOSFET SG2M040120JJ with Low On Resistance and Enhanced Switching Speed
Product Overview The SG2M040120JJ is a 1200V Silicon Carbide (SiC) Power MOSFET from TriQSiCTM, designed for high-speed switching applications. It offers very low switching losses, fully controllable dv/dt, and a high blocking voltage with low on-resistance. Key benefits include reduced cooling effort and requirements, improved efficiency, and increased power density. This MOSFET is ideal for applications such as on-board chargers, EV battery chargers, booster/DC-DC
Surface Mount 60V MOSFET Siliup SP60N1K5KDTL Featuring Dual N Channel and 2KV ESD Protection for Power Applications
Product Overview The SP60N1K5KDTL is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection up to 2KV. Its applications include battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 15K Package: SOT-563 Technical Specifications Parameter Symbol Conditions Min. Typ. Max. Unit Product Summary
P Channel MOSFET Siliup SP40P10TH offering 40V drain source voltage and low RDSon in TO 252 package
Product Overview The SP40P10TH is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching, low gate charge, and low RDS(on), with RDS(on) typically 10.5m at -10V and 14m at -4.5V. This MOSFET is 100% tested for single pulse avalanche energy. It is suitable for applications such as DC-DC converters and load switching. The device is packaged in a TO-252 package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code:
Power Management 30V Dual P Channel MOSFET Siliup SP30P25DNJ with Fast Switching and Low On Resistance
Product Overview The SP30P25DNJ is a 30V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance, and 100% single pulse avalanche energy testing. This MOSFET is suitable for applications such as DC-DC Converters and Power Management. It is available in a PDFN3X3-8L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP30P25DNJ Device Code: 30P25D Package: PDFN3X3-8L
power management solution featuring Siliup SP30P06NK 30V P Channel MOSFET with fast switching speeds
Product Overview The SP30P06NK is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds, a surface mount package, and is ROHS compliant & Halogen-Free. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for applications such as DC-DC converters and motor control. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: P-Channel
SG2M023120J1J Silicon Carbide MOSFET Featuring High Blocking Voltage and Low Reverse Recovery Charge
Product Overview The SG2M023120J1J is a 1200V Silicon Carbide (SiC) Power MOSFET designed for high-speed switching applications. It offers very low switching losses, fully controllable dv/dt, and high blocking voltage with low on-resistance. The device features a fast intrinsic diode with low reverse recovery charge (Qrr) and temperature-independent turn-off switching losses. These characteristics lead to reduced cooling efforts, improved efficiency, increased power density,
Energy 60V P Channel MOSFET Siliup SP60P11TH with Fast Switching and Low Gate Charge Characteristics
Product Overview The SP60P11H is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications such as DC-DC converters and load switching. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP60P11H Device Code: 60P11 Package: TO-252 Technical Specifications Parameter Symbol
270V N Channel Planar MOSFET Siliup SP40N27TF Featuring Low Gate Charge and Low RDSon for Switching
Product Overview The SP40N27TF is a 270V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching applications and synchronous rectification. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP40N27TF Channel Type: N-Channel
power switching solution Siliup SP020N08GHTD N Channel MOSFET with excellent avalanche energy rating
Product Overview The SP020N08GHTD is a 200V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It is designed for high-speed power switching applications, including DC-DC converters and power management systems. Key features include fast switching speeds, low gate charge, and low RDS(on), contributing to efficient power conversion. The device is tested for 100% single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd.
1200V Silicon Carbide MOSFET Sichainsemi S1M014120H with Low On Resistance and Halogen Free Design
Product Overview The S1M014120H is a 1200V Silicon Carbide (SiC) Power MOSFET from Qingchun Semiconductor (Ningbo) Co., Ltd. Designed for high-speed switching applications, it offers very low switching losses, high blocking voltage with low on-resistance, and temperature-independent turn-off switching losses. This MOSFET is halogen-free and RoHS compliant, contributing to reduced cooling effort, improved efficiency, increased power density, and higher system switching
100V P Channel Power MOSFET Siliup SP010P10GHTD with Split Gate Trench Technology and Low On Resistance
Product Overview The SP010P10GHTD is a 100V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, this MOSFET offers fast switching, low gate charge, and low RDS(on). It is designed for various applications including PWM applications, hard-switched and high-frequency circuits, and power management. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor
N Channel MOSFET Siliup SP2N10T2A 100V 2A Drain Current SOT 23 Package Suitable for DC DC Converters
Product Overview The SP2N10T2A is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capabilities in a surface mount SOT-23 package. This MOSFET is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: N-Channel MOSFET Package Type: SOT-23 Device Code: SP2N10T2A Version: Ver-1.1 Technical Specifications Parameter
High Frequency and PWM Applications Using Siliup SP50MF65TO 650V Super Junction MOSFET with Low RDSon
Product Overview The SP50MF65TO is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for PWM applications, hard-switched, and high-frequency circuits, as well as power management. The device has undergone 100% single pulse avalanche energy testing. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP50MF65TO Package: TOLL Technical
Power Switching MOSFET Siliup SP30N08GDNK 30V Dual N Channel with Low Gate Charge and Fast Switching
Product Overview The SP30N08GDNK is a 30V Dual N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications and isolated DC/DC converters in telecom and industrial sectors. The device is available in a PDFN5X6-8L package. Product Attributes Brand:
High reliability Siliup SP40P08ANJ 40V P Channel MOSFET with single pulse avalanche energy testing
Product Overview The SP40P08ANJ is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for efficient power management, this MOSFET features fast switching speeds and low on-resistance, making it ideal for applications such as DC-DC converters. It is 100% tested for single pulse avalanche energy, ensuring reliability in demanding conditions. The device is housed in a compact PDFN3X3-8L package. Product Attributes Brand: Siliup Semiconductor
