Single FETs, MOSFETs

OSEN OSD740 450V N-CHANNEL MOSFETThe OSEN OSD740 is a 450V N-CHANNEL MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive, tested avalanche energy, and improved dv/dt capability for high ruggedness. This MOSFET is ideal for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: China (http://www.osen.net.cn)Publicatio

Product OverviewThe PJM3416NSA is an N-Channel Enhancement Mode Power MOSFET from Pingjing Semiconductor. It features ESD protection up to 2KV (HBM), high power and current handling capabilities, and low on-resistance. This MOSFET is suitable for load switch and PWM applications.Product AttributesBrand: Pingjing SemiconductorESD Protected (HBM): Up to 2KVTechnical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitAbsolute Maximum RatingsVDS20VVGS8VID6.5AIDMNote130APD

Product OverviewThe PJA3419 is a 20V P-Channel Enhancement Mode MOSFET featuring ESD protection. It is designed for switch load and PWM applications, offering low RDS(ON) at various gate-source voltages and drain currents. The device utilizes Advanced Trench Process Technology and is compliant with EU RoHS 2011/65/EU and IEC61249 green molding compound standards.Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2011/65/EU, IEC61249 (Halogen Free), ESD

Product OverviewThe PJM07P30PA is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for load switching, PWM applications, and power management. Key advantages include 100% Avalanche Tested, RoHS and Reach Compliance, and Halogen and Antimony Free construction. This device offers low on-resistance characteristics at various gate-source voltages.Product AttributesBrand: PingJingSemiCertifications: RoHS and Reach Compliant, Halogen

BSS138 - 50V N-Channel Enhancement Mode MOSFET - ESD ProtectedThe BSS138 is a 50V N-Channel Enhancement Mode MOSFET with ESD protection, designed for battery-operated systems and solid-state relays. It features advanced trench process technology and a high-density cell design for ultra-low on-resistance. Its very low leakage current in the off-condition makes it suitable for applications such as relays, displays, lamps, solenoids, and memories.Product AttributesBrand: Panjit

Product OverviewThe PJA3404 is a 30V N-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced Trench Process Technology, offering low on-state resistance (RDS(ON)) at various gate-source voltages and drain currents. This MOSFET is compliant with EU RoHS 2011/65/EU directive and uses a green molding compound as per IEC61249 Std. (Halogen Free).Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2011/65/EU

Product OverviewThe IRFP064N is a 55V N-CHANNEL MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive, tested avalanche energy, and improved dv/dt capability for high ruggedness. This MOSFET is suitable for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENModel Number: IRFP064NPublication Order Number: IRFP064NRevisi

Product OverviewThe OSH20N65C is a 650V N-Channel MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive capability, and tested avalanche energy. Its improved dv/dt capability and high ruggedness make it suitable for demanding power supply and lighting applications.Product AttributesBrand: OSENPublication Order Number: OSH20N65Revision: 21.2.10Package: TO-3PNBTechnical SpecificationsSymbolParam

Product OverviewThe PJM07P20SA is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features low gate charge and a high-density cell design for ultra-low RDS(ON), making it ideal for load switching and PWM applications. This MOSFET offers robust performance with a VDS of -20V and ID of -7A, and an RDS(on) as low as 28m at VGS=-10V.Product AttributesBrand: PingJingSemiPackage: SOT-23Revision: 4.0Date: Oct-2022Technical SpecificationsParamete

Product OverviewThe 2N7002KDW is a 60V N-Channel Enhancement Mode MOSFET featuring ESD protection. It utilizes advanced Trench Process Technology and a high-density cell design for ultra-low on-resistance. This MOSFET is specially designed for battery-operated systems and drivers for solid-state relays, displays, and memories. It offers very low leakage current in the off condition and is ESD protected up to 2KV HBM.Product AttributesCertifications: Lead free in compliance

Product Overview The UJ4C075018K4S is a 750V, 18m G4 SiC FET designed for high-efficiency power switching applications. Utilizing a unique cascode configuration combining a normally-on SiC JFET with a Si MOSFET, it offers normally-off operation with standard gate-drive characteristics. This makes it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO-247-4L package, it features ultra-low gate charge, exceptional reverse

OSEN OSPH12N65 650V N-CHANNEL MOSFETThe OSEN OSPH12N65 is a 650V N-channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: http://www.osen.net.cnTechnical Specification

Product Overview The SI2303 is a P-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance due to its advanced trench process technology. It is housed in a SOT-23 small outline plastic package and is halogen-free and RoHS compliant. Product Attributes Brand: (Paker Microelectronics) Origin: Shenzhen, China Package Type: SOT-23 Small Outline Plastic Package Certifications: UL:94V-0, Halogen free, RoHS compliant

Product OverviewThe PPJA3400 is a 30V N-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, offering low on-state resistance at various gate-source voltages. This MOSFET is lead-free and compliant with EU RoHS 2011/65/EU, utilizing a green molding compound as per IEC61249 Std. (Halogen Free).Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen

Product OverviewThe PJM3402NSC is an N-Channel Enhancement Mode Power MOSFET designed for load switching and PWM applications, offering high power and current handling capabilities. It features a VDS of 30V and an ID of 4A, with a low RDS(on) of less than 45m at VGS=10V. This component is ideal for power management solutions.Product AttributesBrand: Pingjing Semiconductor (implied by www.pingjingsemi.com)Package: SOT-23-3Technical SpecificationsParameterSymbolTest ConditionMi

Product OverviewThe OSPF28N50 is a 500V N-CHANNEL MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive capability, and improved dv/dt capability for enhanced ruggedness. Tested for avalanche energy, this MOSFET is suitable for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENPublication Order Number: OSPF28N50Package: TO

Product OverviewThe PPJW4P06A-AU is a 60V P-Channel Enhancement Mode MOSFET in a SOT-223 package. It offers high switching speed, improved dv/dt capability, low gate charge, and low reverse transfer capacitance. This MOSFET is AEC-Q101 qualified and compliant with EU RoHS 2.0 and IEC 61249 standards, making it suitable for various electronic applications.Product AttributesBrand: Panjit International Inc.Package: SOT-223Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant

Product OverviewThe PJM2305PSA is a P-Channel Power MOSFET designed for efficient power management. It offers fast switching speeds, low gate charge, and low RDS(ON), making it suitable for load switching and PWM applications. Its compact SOT-23 package is ideal for space-constrained designs.Product AttributesBrand: Pingjing SemiconductorPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionMinTypeMaxUnitsAbsolute Maximum RatingsDrain-Source Voltage-VDS12VGate

Product OverviewThe OSP50N06T is a 60V N-Channel MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt performance with high ruggedness. This MOSFET is suitable for use in high-efficiency switch-mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENPublication Order Number: OSP50N06TRevision: Rev 21.2.10Technical

Product OverviewThe PJM65H0D5NSA is an N-Channel Enhancement Mode Power MOSFET designed for power switch circuits in adaptors and chargers, and general power management applications. It features fast switching, low gate charge, low RDS(on), and low reverse transfer capacitances, making it an efficient component for various power electronics designs.Product AttributesBrand: PingJingSemiModel: PJM65H0D5NSAPackage: SOT-23Origin: China (implied by website domain)Technical