Single FETs, MOSFETs

Product Overview The OSG65R1K4xF series of Enhancement Mode N-Channel Power MOSFETs from Oriental Semiconductor utilizes advanced GreenMOSTM technology to deliver exceptional performance. These MOSFETs are engineered for low RDS(on), minimal gate charge, fast switching speeds, and excellent avalanche characteristics. They are ideally suited for demanding applications such as active power factor correction and switching mode power supplies, offering low switching loss and high

Product OverviewThe PJM10H15NTE is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is 100% avalanche tested, RoHS compliant, and halogen and antimony free. This MOSFET is designed for power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supply systems. Its key specifications include a VDS of 100V, ID of 15A, and low RDS(on) values of < 100m @VGS=10V and < 130m @VGS=4.5V.Product

Product OverviewThe SI2309 is a P-Channel Enhancement Mode Power MOSFET featuring an advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is housed in a standard SOT-23 small outline plastic package, offering an industry-standard form factor. This MOSFET is halogen-free and RoHS compliant, making it suitable for various electronic applications.Product AttributesBrand: (Pakermicro)Origin: (Shenzhen)Package Type: SOT-23Certifications

Product OverviewThe PPJ2301-AU is a 20V P-Channel Enhancement Mode MOSFET from Panjit International Inc., designed for switch load and PWM applications. It features advanced trench process technology, AEC-Q101 qualification, and compliance with EU RoHS directives and IEC61249 standards for green molding compound. This MOSFET offers low on-resistance at various gate-source voltages.Product AttributesBrand: Panjit International Inc.Certifications: TS16949, AEC-Q101 qualified,

Product Overview The OSG80R1K4DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS series. Utilizing charge balance technology, it delivers outstanding low on-resistance and reduced gate charge, engineered for minimized conduction and switching losses. This MOSFET offers superior switching performance and robust avalanche capability, making it ideal for high power density applications requiring the highest efficiency standards. Key

Product OverviewThe PJM2321PSA is a P-Channel Power MOSFET designed for load switching and PWM applications, offering efficient power management. It features a -20V Drain-to-Source Voltage and a continuous drain current of -2.9A, with a low on-resistance of 57m (max) at -4.5V.Product AttributesBrand: PingJingSemiPackage: SOT-23Technical SpecificationsParameterSymbolTest ConditionMinTypeMaxUnitsDrain-source breakdown voltageV(BR)DSSVGS = 0V, ID=-250A-20VDrain to Source Leakage

Product Overview The OSG60R180xSF series is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, utilizing advanced GreenMOSTM technology. These MOSFETs offer low RDS(on), low gate charge, fast switching, and excellent avalanche characteristics. They are designed for applications requiring high efficiency and reliability, such as active power factor correction and switching mode power supplies. The series is available in multiple package types including

Product OverviewThe PJM3400JNSC is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is RoHS and Reach Compliant, Halogen and Antimony Free, and has a Moisture Sensitivity Level 3. This MOSFET is designed for load switch and PWM applications, offering a VDS of 30V and a continuous ID of 5A, with low RDS(on) at various VGS levels.Product AttributesBrand: PingJingSemiCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture

Product OverviewThe PJM7002KNDC is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features fast switching, low gate charge, and low RDS(ON), making it suitable for applications such as load switching and PWM control. Its compact DFN1x0.6-3L package and robust performance characteristics make it a versatile component for modern electronic designs.Product AttributesBrand: PJMPackage: DFN1x0.6-3LMarking Code: K72Origin: Not specifiedMateri

Product Overview The 2N7002KTB is an N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in the off condition and is specifically designed for battery-operated systems, solid-state relays, and various driver applications including relays, displays, lamps, solenoids, and memories. This ESD-protected device (2KV HBM) is lead-free and compliant with EU RoHS2

Product Overview The SFS04R038GF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, designed using their unique FSMOS technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The low Vth series is optimized for synchronous rectification systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power

Product Overview The OSH25N60 is a 600V N-Channel MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low-level drive capability, and tested avalanche energy. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. Product Attributes Brand: OSEN Publication Order Number: OSH25N60 Revision: Rev 21.2.10 Package Type: TO

Product OverviewThe PJM4602DNSG-S is a Dual N-Channel MOSFET designed for efficient power management applications. It features fast switching, low gate charge, and low RDS(on), providing high power and current handling capabilities. This MOSFET is ideal for battery protection, load switching, and general power management circuits.Product AttributesBrand: PingJingSemiModel: PJM4602DNSG-SRevision: 1.0Date: Apr-2020Marking Code: DS02Technical SpecificationsParameterSymbolConditi

Product OverviewThe PJM2302NSA-S is an N-channel Enhancement Mode Field Effect Transistor in a SOT-23 package. It offers fast switching, low gate charge, and low on-state resistance (RDS(on)), providing high power and current handling capability. This device is suitable for applications such as battery protection, load switching, and power management.Product AttributesBrand: PingjingsemiOrigin: China (implied by website domain)Material: Not specifiedColor: Not specifiedCertif

Product OverviewThe P2N7002KW-AU is a 60V N-Channel Enhancement Mode MOSFET featuring ESD protection. It offers ultra-low on-resistance due to its advanced trench process technology and high-density cell design. This MOSFET is specifically designed for battery-operated systems and solid-state relays, making it suitable for driving relays, displays, and memories. It boasts very low leakage current in the off condition and is AEC-Q101 qualified.Product AttributesBrand: Panjit

Product OverviewThe 2N7002KDW is a 60V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in off-condition, making it ideal for battery-operated systems and solid-state relays. This ESD-protected device is suitable for driving relays, displays, lamps, solenoids, and memories.Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2011/65

Product OverviewThe PJM08N30DF is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is RoHS and Reach compliant, halogen and antimony free, and has a Moisture Sensitivity Level 1. This MOSFET is designed for load switching, PWM applications, and power management, offering a VDS of 30V, ID of 8A, and low RDS(on) at various gate-source voltages.Product AttributesBrand: PingJing SemiconductorCertifications: RoHS, Reach CompliantMaterial: Halogen

OSPF65R380 650V Super-Junction Power MOSFETThe OSPF65R380 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM RDS(on), 100% avalanche tested, improved dv/dt capability, and high ruggedness. This MOSFET is suitable for use in high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENPublication Order Number: OSPF65R380Rev: 21.2.10Certifications: RoHS

Product OverviewThe SI2323DS-T1-GE3-L is a P Channel MOSFET designed for various electronic applications. It features low RDS(ON), meets UL 94 V-0 flammability rating, and has a Moisture Sensitivity Level 1. This device is also Lead Free Finish/RoHS Compliant.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: UL 94 V-0 Flammability Rating, RoHS CompliantHalogen Free: Available Upon Request By Adding Suffix "

2N7002KW N-Channel Enhancement Mode MOSFETThe 2N7002KW is an N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in off-condition and is specially designed for battery-operated systems. This ESD-protected device is suitable for applications such as solid-state relays, drivers for relays, displays, lamps, solenoids, and memories.Product AttributesCertificat