Single FETs, MOSFETs
OSG65R1K4AF MOSFET by Oriental Semiconductor Offering Low RDSon and High Avalanche Energy Capability
Product Overview The OSG65R1K4xF series of Enhancement Mode N-Channel Power MOSFETs from Oriental Semiconductor utilizes advanced GreenMOSTM technology to deliver exceptional performance. These MOSFETs are engineered for low RDS(on), minimal gate charge, fast switching speeds, and excellent ...
High Speed Power Switching MOSFET RENESAS 2SK2225-E Silicon N Channel with TO 3PFM Package Design
2SK2225 Silicon N Channel MOS FETThe 2SK2225 is a Silicon N Channel MOS FET designed for high-speed power switching applications. It features a high breakdown voltage (VDSS = 1500 V), fast switching speeds, and low drive current, making it suitable for switching regulators and DC-DC converters. It ...
N Channel Enhancement Mode Power MOSFET PJSEMI PJM10H15NTE featuring low RDSon and 100V VDS rating
Product OverviewThe PJM10H15NTE is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is 100% avalanche tested, RoHS compliant, and halogen and antimony free. This MOSFET is designed for power switching applications, including hard-switched and high-frequency ...
Parker SI2309-K P Channel Enhancement Mode MOSFET Offering Low On Resistance and Halogen Free Design
Product OverviewThe SI2309 is a P-Channel Enhancement Mode Power MOSFET featuring an advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is housed in a standard SOT-23 small outline plastic package, offering an industry-standard form factor. This MOSFET ...
20V P Channel Enhancement Mode MOSFET PANJIT PJ2301 AU R1 000A1 for Switch Load and PWM Applications
Product OverviewThe PPJ2301-AU is a 20V P-Channel Enhancement Mode MOSFET from Panjit International Inc., designed for switch load and PWM applications. It features advanced trench process technology, AEC-Q101 qualification, and compliance with EU RoHS directives and IEC61249 standards for green ...
Low On Resistance and Reduced Gate Charge ORIENTAL SEMI OSG80R1K4DF Enhancement Mode N Channel MOSFET
Product Overview The OSG80R1K4DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS series. Utilizing charge balance technology, it delivers outstanding low on-resistance and reduced gate charge, engineered for minimized conduction and switching losses. This MOSFET ...
P Channel MOSFET PJSEMI PJM2321PSA Featuring 20V Drain to Source Voltage and 2.9A Continuous Current
Product OverviewThe PJM2321PSA is a P-Channel Power MOSFET designed for load switching and PWM applications, offering efficient power management. It features a -20V Drain-to-Source Voltage and a continuous drain current of -2.9A, with a low on-resistance of 57m (max) at -4.5V.Product AttributesBrand...
Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI OSG60R180FSF with Low RDS on and Fast Switching
Product Overview The OSG60R180xSF series is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, utilizing advanced GreenMOSTM technology. These MOSFETs offer low RDS(on), low gate charge, fast switching, and excellent avalanche characteristics. They are designed for applications ...
Load Switch MOSFET PJSEMI PJM3400JNSC Featuring 5A Continuous Drain Current and Low RDS on Resistance
Product OverviewThe PJM3400JNSC is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is RoHS and Reach Compliant, Halogen and Antimony Free, and has a Moisture Sensitivity Level 3. This MOSFET is designed for load switch and PWM applications, offering a VDS of 30V ...
load switching component PJSEMI PJM7002KNDC N Channel Enhancement Mode MOSFET with fast switching speed
Product OverviewThe PJM7002KNDC is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features fast switching, low gate charge, and low RDS(ON), making it suitable for applications such as load switching and PWM control. Its compact DFN1x0.6-3L package and robust ...
N Channel MOSFET PANJIT 2N7002KTB R1 00001 with 2KV HBM ESD protection and trench process technology
Product Overview The 2N7002KTB is an N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in the off condition and is specifically designed for battery-operated systems, solid...
Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS04R038GF with Low RDS ON and Fast Switching
Product Overview The SFS04R038GF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, designed using their unique FSMOS technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The low Vth series is optimized for synchronous ...
Durable 600V N Channel MOSFET OSEN OSH25N60 designed for switch mode power supplies and lamp ballasts
Product Overview The OSH25N60 is a 600V N-Channel MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low-level drive capability, and tested avalanche energy. This MOSFET is ideal for applications such as high efficiency switch mode ...
PJM4602DNSG S PJSEMI Dual N Channel MOSFET suitable for load switching and power management circuits
Product OverviewThe PJM4602DNSG-S is a Dual N-Channel MOSFET designed for efficient power management applications. It features fast switching, low gate charge, and low RDS(on), providing high power and current handling capabilities. This MOSFET is ideal for battery protection, load switching, and ...
Low gate charge N channel transistor PJSEMI PJM2302NSA-S with high power capability in SOT 23 package
Product OverviewThe PJM2302NSA-S is an N-channel Enhancement Mode Field Effect Transistor in a SOT-23 package. It offers fast switching, low gate charge, and low on-state resistance (RDS(on)), providing high power and current handling capability. This device is suitable for applications such as ...
Low On Resistance MOSFET PANJIT 2N7002KW AU R1 000A1 Suitable for Solid State Relays and Memory Applications
Product OverviewThe P2N7002KW-AU is a 60V N-Channel Enhancement Mode MOSFET featuring ESD protection. It offers ultra-low on-resistance due to its advanced trench process technology and high-density cell design. This MOSFET is specifically designed for battery-operated systems and solid-state relays...
Panjit 2N7002KDW R1 00001 60V N Channel MOSFET with Ultra Low On Resistance and Low Leakage Current
Product OverviewThe 2N7002KDW is a 60V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in off-condition, making it ideal for battery-operated systems and solid-state relays. ...
Power MOSFET PJSEMI PJM08N30DF N Channel with Low RDS on and 30V Drain Source Breakdown Voltage
Product OverviewThe PJM08N30DF is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is RoHS and Reach compliant, halogen and antimony free, and has a Moisture Sensitivity Level 1. This MOSFET is designed for load switching, PWM applications, and power management, ...
high voltage 650V power mosfet OSEN OSPF65R380 with improved dv dt capability and low on resistance
OSPF65R380 650V Super-Junction Power MOSFETThe OSPF65R380 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM RDS(on), 100% avalanche tested, improved dv/dt capability, and high ruggedness. This MOSFET is suitable for use in high efficiency ...
Electronic P Channel MOSFET PIELENST SI2323DS-T1-GE3-L with Low RDS ON and Moisture Sensitivity Level 1
Product OverviewThe SI2323DS-T1-GE3-L is a P Channel MOSFET designed for various electronic applications. It features low RDS(ON), meets UL 94 V-0 flammability rating, and has a Moisture Sensitivity Level 1. This device is also Lead Free Finish/RoHS Compliant.Product AttributesBrand: Not specifiedOr...
